# Power MOSFET, N Channel, 800 V, 9 A, 0.9 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:9803840/)

**URL**: https://novapart.co/products/STW10NK80Z/power-mosfet-n-channel-800-v-9-a-09-ohm-to-247
**SKU**: STW10NK80Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.2000
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.9ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9803840/)

**STP10NK80Z, STP10NK80ZFP, STW10NK80Z** N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages 

**Datasheet — production data** 

## **Features** 

|**Type**|**VDSS**|**RDS(on)**|**ID**|**Pw**|
|---|---|---|---|---|
|STP10NK80Z|800V|<0.90Ω|9A|160 W|
|STP10NK80ZFP|800V|<0.90Ω|9A|40 W|
|STW10NK80Z|800V|<0.90Ω|9A|160 W|



- Extremely high dv/dt capability 

- 100% avalanche tested 

- Gate charge minimized 

- Very low intrinsic capacitances 

**==> picture [170 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2 3<br>1 2<br>1<br>TO-220 TO-220FP<br>TO-247<br>**----- End of picture text -----**<br>


- Very good manufacturing repeability 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

- Switching application 

## **Description** 

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. 

**==> picture [220 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2,TAB)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Part number**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STP10NK80Z|P10NK80Z|TO-220|Tube|
|STP10NK80ZFP|P10NK80ZFP|TO-220FP|Tube|
|STW10NK80Z|W10NK80Z|TO-247|Tube|



1/17 

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Doc ID 8911 Rev 7 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**|**STP10NK80Z, STP10NK80ZFP, STW10NK80Z**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**TO-220/ TO-247**|**TO-220FP**||
|VDSS|Drain-source voltage (VGS= 0)|800||V|
|VDGR|Drain-gate voltage (RGS= 20kΩ)|800||V|
|VGS|Gate-source voltage|± 30||V|
|ID|Drain current (continuous) at TC= 25°C|9|9(1)|A|
|ID|Drain current (continuous) at TC=100°C|6|6(1)|A|
|IDM<br>(2)|Drain current (pulsed)|36|36(1)|A|
|PTOT|Total dissipation at TC= 25°C|160|40|W|
||Derating factor|1.28|0.32|W/°C|
|Vesd(G-S)|G-S ESD (HBM C=100pF, R=1.5kΩ)|4||kV|
|dv/dt(3)|Peak diode recovery voltage slope|4.5||V/ns|
|VISO|Insulation withstand voltage (DC)|--|2500|V|
|TJ<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 150||°C|



1. Limited by maximum junction temperature. 

2. Pulse width limited by safe operating area. 

3. ISD ≤  9 A, di/dt ≤  200 A/µs,VDD ≤  V(BR)DSS, Tj ≤  TJMAX 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**TO-220**|**TO-220FP**|**TO-247**||
|Rthj-case|Thermal resistance junction-case Max|0.78|3.1|0.78|°C/W|
|Rthj-a|Thermal resistance junction-ambient Max|62.5||50|°C/W|



## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAS|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj Max)|9|A|
|EAS|Single pulse avalanche energy<br>(starting Tj=25°C, Id=Iar, Vdd=50V)|290|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1mA, VGS= 0|800|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 800V<br>VDS= 800V, TC= 125°C|||1<br>50|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10V, ID= 4.5A||0.78|0.9|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS=15V, ID= 4.5A|-|9.6|-|S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25V, f=1 MHz, VGS=0|-|2180<br>205<br>38|-|pF<br>pF<br>pF|
|Coss eq<br>(2)<br>.|Equivalent output<br>capacitance|VGS=0, VDS=0V to 640V|-|105|-|pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD=640V, ID= 9A<br>VGS=10V<br>See_Figure 20_|-|72<br>12.5<br>37|-|nC<br>nC<br>nC|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 

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**Electrical characteristics** 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD=400 V, ID=4.5A,<br>RG=4.7Ω,VGS=10V<br>See_Figure 21_||30<br>20||ns<br>ns|
|td(off)<br>tf|Turn-off delay Time<br>Fall time|VDD=400 V, ID=4.5A,<br>RG=4.7Ω,VGS=10V<br>See_Figure 21_||65<br>17||ns<br>ns|



## **Table 8. Gate-source zener diode** 

|**Table 8.**|**Gate-source zener diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|BVGSO<br>(1)|Gate-source breakdown voltage|Igs=±1mA<br>(open drain)|30|||V|



1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

## **Table 9. Source drain diode** 

|**Table 9.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD|Source-drain current||-||9|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-||36|A|
|VSD<br>(2)|Forward on voltage|ISD=9A, VGS=0|-||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD=9A,<br>di/dt = 100A/µs,<br>VDD=45V, Tj=150°C|-|645<br>6.4<br>20||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration=300µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220** 

**Figure 3. Thermal impedance for TO-220** 

**==> picture [155 x 153] intentionally omitted <==**

**Figure 4. Safe operating area for TO-220FP** 

**==> picture [155 x 150] intentionally omitted <==**

**Figure 5. Thermal impedance for TO-220FP** 

**==> picture [164 x 157] intentionally omitted <==**

**Figure 6. Safe operating area for TO-247** 

**==> picture [155 x 150] intentionally omitted <==**

**Figure 7. Thermal impedance for TO-247** 

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**Electrical characteristics** 

## **Figure 8. Output characterisics** 

## **Figure 9. Transfer characteristics** 

**==> picture [155 x 147] intentionally omitted <==**

**==> picture [155 x 153] intentionally omitted <==**

**Figure 10. Transconductance** 

**Figure 11. Static drain-source on resistance** 

**==> picture [155 x 149] intentionally omitted <==**

**==> picture [164 x 153] intentionally omitted <==**

**Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations** 

**==> picture [164 x 152] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage vs temperature** 

**==> picture [155 x 153] intentionally omitted <==**

## **Figure 16. Source-drain diode forward characteristics** 

**==> picture [164 x 152] intentionally omitted <==**

## **Figure 15. Normalized on resistance vs temperature** 

**==> picture [164 x 149] intentionally omitted <==**

## **Figure 17. Normalized BVDSS vs temperature** 

**==> picture [164 x 146] intentionally omitted <==**

## **Figure 18. Maximum avalanche energy vs temperature** 

**==> picture [164 x 152] intentionally omitted <==**

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**Test circuit** 

## **3 Test circuit** 

**Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load** 

**==> picture [173 x 93] intentionally omitted <==**

**==> picture [173 x 117] intentionally omitted <==**

**Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit** 

**==> picture [173 x 101] intentionally omitted <==**

**==> picture [173 x 115] intentionally omitted <==**

**Figure 23. Unclamped inductive waveform** 

**Figure 24. Switching time waveform** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**Table 10. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

## **Figure 25. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 11. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package mechanical data** 

## **Figure 26. TO-220FP drawing** 

**==> picture [405 x 578] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **Table 12. TO-247 mechanical data** 

|**Dim.**|**mm.**|**mm.**|**mm.**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**Package mechanical data** 

**==> picture [132 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 27. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [401 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

## **Table 13. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-Sep-2005|4|Complete document|
|10-Mar-2006|5|Inserted ecopack indication|
|28-Sep-2005|6|New template, no content change|
|15-Mar-2012|7|Content reworked to improve readability.<br>Minor text changes in cover page.<br>Updated_Table 5_.<br>Updated_Section 4: Package mechanical data_.|



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## Links

- [View this product on Novapart](https://novapart.co/products/STW10NK80Z/power-mosfet-n-channel-800-v-9-a-09-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stw10nk80z/mosfet-n-to-247/dp/9803840)
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