# Power MOSFET, N Channel, 650 V, 5.5 A, 0.71 ohm, TO-251, Through Hole

![Product image](https://novapart.co/image/farnell:3132767/)

**URL**: https://novapart.co/products/STU9HN65M2/power-mosfet-n-channel-650-v-55-a-071-ohm-to-251
**SKU**: STU9HN65M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5890
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 |
| Power Dissipation | 60W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 60W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.71ohm |
| Transistor Case Style | TO-251 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.5A |
| Drain Source On State Resistance | 0.71ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132767/)

## **STU9HN65M2** 

## N-channel 650 V, 0.71 Ω typ., 5.5 A MDmesh™ M2 Power MOSFET in an IPAK package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STU9HN65M2|650 V|0.82 Ω|5.5 A|



TAB STU9HN65M2 650 V 0.82 Ω 5.5 A 3  Extremely low gate charge 2  Excellent output capacitance (COSS) profile 1  100% avalanche tested  Zener-protected IPAK **Applications**  Switching applications **Figure 1: Internal schematic diagram** D(2, TAB) **Description** This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, G(1) rendering it suitable for the most demanding high efficiency converters. **Table 1: Device summary Order code Marking Package Packing** STU9HN65M2 9HN65M2 IPAK Tube S(3) AM15572v1_tab ~~Olam~~ October 2015 DocID027605 Rev 3 1/12 This is information on a product in full production. _www.st.com_ 

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|**Contents**<br>**STU9HN65M2**|**Contents**<br>**STU9HN65M2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>IPAK (TO-251) type A package information ...................................... 9|
|**5**|**Revision history ............................................................................ 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|5.5|A|
|ID|Drain current (continuous) at TC= 100 °C|3.5|A|
|IDM_(1)_|Drain current (pulsed)|22|A|
|PTOT|Total dissipation at TC= 25 °C|60|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|15|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150||



## **Notes:** 

(1) Pulse width limited by safe operating area. 

(2) ISD ≤ 5.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. 

(3) VDS ≤ 520 V 

## **Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max.|**2.08**|°C/W|
|Rthj-amb|Thermal resistancejunction-ambient max.|100|°C/W|



## **Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)|**1.0**|A|
|EAS|Singlepulse avalanche energy(startingTj= 25 °C, ID= IAR, VDD= 50 V)|105|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified). 

**Table 5: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|650|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 650 V|||1|µA|
|||VGS= 0 V, VDS= 650 V,<br>TC= 125 °C|||100|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 2.5 A||0.71|0.82|Ω|



**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz, VGS= 0 V|-|325|-|pF|
|Coss|Output<br>capacitance||-|16|-|pF|
|Crss|Reverse transfer<br>capacitance||-|0.85|-|pF|
|Coss eq._(1)_|Equivalent output<br>capacitance|VDS= 0 V to 520 V, VGS= 0 V|-|109|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|5.6|-|Ω|
|Qg|Totalgate charge|VDD= 520 V, ID= 5 A, VGS= 10 V (see<br>_Figure 15: "Test circuit for gate charge_<br>_behavior"_)|-|11.5|-|nC|
|Qgs|Gate-source<br>charge||-|2.5|-|nC|
|Qgd|Gate-drain charge||-|5|-|nC|



## **Notes:** 

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 325 V, ID= 2.5 A RG= 4.7 Ω,<br>VGS= 10 V (see_Figure 14: "Test_<br>_circuit for resistive load switching_<br>_times"_and_Figure 19: "Switching time_<br>_waveform"_)|-|7.5|-|ns|
|tr|Rise time||-|4.6|-|ns|
|td(off)|Turn-off-delaytime||-|24|-|ns|
|tf|Fall time||-|14.5|-|ns|



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**Electrical characteristics** 

|||**Table 8: Source-drain diode**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD|Source-drain current||-||5.5|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||22|A|
|VSD_(2)_|Forward on voltage|VGS= 0 V, ISD= 5 A|-||1.6|V|
|trr|Reverse recovery<br>time|ISD= 5 A, di/dt = 100 A/µs,<br>VDD= 60 V (see_Figure 16: "Test_<br>_circuit for inductive load switching_<br>_and diode recovery times"_)|-|268||ns|
|Qrr|Reverse recovery<br>charge||-|1.7||µC|
|IRRM|Reverse recovery<br>current||-|12.5||A|
|trr|Reverse recovery<br>time|ISD= 5 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C (see_Figure_<br>_16: "Test circuit for inductive load_<br>_switching and diode recovery times"_)|-|408||ns|
|Qrr|Reverse recovery<br>charge||-|2.6||µC|
|IRRM|Reverse recovery<br>current||-|13||A|



## **Notes:** 

(1)Pulse width is limited by safe operating area. 

(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 3: Thermal impedance** 

**Figure 2: Safe operating area** 

**==> picture [160 x 143] intentionally omitted <==**

**==> picture [171 x 169] intentionally omitted <==**

**Figure 4: Output characteristics** 

**==> picture [148 x 141] intentionally omitted <==**

**Figure 5: Transfer characteristics** 

**==> picture [155 x 141] intentionally omitted <==**

**==> picture [397 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Normalized gate threshold voltage<br>Figure 7: Normalized V(BR)DSS vs. temperature<br>vs. temperature  GIPD180920141448FSR<br>GIPD180920141442FSR V(BR)DSS<br>VGS(th) (norm)<br>(norm)<br>1.1 ID = 250 µ A 1.08 ID= 1mA<br>1.04<br>1.0<br>1.00<br>0.9<br>0.96<br>0.8<br>0.92<br>0.7<br>0.88<br>0.6 -75 -25 25 75 125 Tj(°C)<br>-75 -25 25 75 125 Tj(°C)<br>**----- End of picture text -----**<br>


**Figure 6: Normalized gate threshold voltage vs. temperature** 

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**Electrical characteristics** 

**Figure 8: Static drain-source on-resistance** 

**==> picture [161 x 145] intentionally omitted <==**

**Figure 9: Normalized on-resistance vs. temperature** 

**==> picture [185 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD180920141459FSR<br>RDS(on)<br>(norm)<br>2.2<br>VGS= 10V<br>1.8<br>1.4<br>1<br>0.6<br>0.2<br>-75 -25 25 75 125 Tj(°C)<br>**----- End of picture text -----**<br>


**Figure 10: Gate charge vs. gate-source voltage** 

**==> picture [160 x 148] intentionally omitted <==**

**Figure 11: Capacitance variations** 

**==> picture [159 x 143] intentionally omitted <==**

**==> picture [408 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Source-drain diode forward<br>Figure 12: Output capacitance stored energy<br>characteristics<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**==> picture [375 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14: Test circuit for resistive load  Figure 15: Test circuit for gate charge<br>switching times  behavior<br>**----- End of picture text -----**<br>


**==> picture [385 x 26] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16: Test circuit for inductive load<br>switching and diode recovery times  Figure 17: Unclamped inductive load test<br>circuit<br>**----- End of picture text -----**<br>


**==> picture [379 x 14] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19: Switching time waveform<br>Figure 18: Unclamped inductive waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 IPAK (TO-251) type A package information** 

**Figure 20: IPAK (TO-251) type A package outline** 

**==> picture [406 x 462] intentionally omitted <==**

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**Package information** 

**Table 9: IPAK (TO-251) type A package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||



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**Revision history** 

## **5 Revision history** 

**Table 10: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|11-Mar-2015|1|Initial release.|
|23-Apr-2015|2|Document statuspromoted to 'Production data'.|
|05-Oct-2015|3|Updated the title and changed VDS parameter in the table of features.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stu9hn65m2/mosfet-n-ch-650v-5-5a-150deg-c/dp/3132767)
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