# Power MOSFET, N Channel, 100 V, 6 A, 0.22 ohm, TO-251, Through Hole

![Product image](https://novapart.co/image/farnell:3367078/)

**URL**: https://novapart.co/products/STU6NF10/power-mosfet-n-channel-100-v-6-a-022-ohm-to-251
**SKU**: STU6NF10
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2110
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET |
| Qualification | - |
| Power Dissipation | 30W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-251 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.22ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367078/)

**==> picture [61 x 39] intentionally omitted <==**

## **STD6NF10 STU6NF10** 

## N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STD6NF10|100 V|< 0.250Ω|6 A|
|STU6NF10|100 V|< 0.250Ω|6 A|



- Exceptional dv/dt capability 

- 100% avalanche tested 

**==> picture [154 x 75] intentionally omitted <==**

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3 3<br>2<br>1<br>1<br>IPAK DPAK<br>**----- End of picture text -----**<br>


## **Application** 

- Switching applications 

## **Description** 

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. 

## **Figure 1. Internal schematic diagram** 

**==> picture [106 x 155] intentionally omitted <==**

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD6NF10T4|D6NF10|DPAK|Tape and reel|
|STU6NF10|6NF10|IPAK|Tube|



1/14 

November 2008 

Rev 6 

_www.st.com_ 

**Contents** 

**STD6NF10, STU6NF10** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packing mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



2/14 

**STD6NF10, STU6NF10** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage (VGS= 0)|100|V|
|VGS|Gate- source voltage|± 20|V|
|ID|Drain current (continuous) at TC= 25 °C|6|A|
|ID|Drain current (continuous) at TC= 100 °C|4|A|
|IDM<br>(1)|Drain current (pulsed)|24|A|
|Ptot|Total dissipation at TC= 25 °C|30|W|
||Derating factor|0.2|W/°C|
|dv/dt(2)|Peak diode recovery voltage slope|40|V/ns|
|EAS<br>(3)|Single pulse avalanche energy|200|mJ|
|Tstg|Storage temperature|-65 to 175|°C|
|Tj|Max. operating junction temperature|||



1. Pulse width limited by safe operating area. 

2. ISD ≤   6 A, di/dt   ≤  300 A/µs, VDD ≤   V(BR)DSS, Tj   ≤  TJMAX 

3. Starting Tj = 25 °C, ID = 3 A, VDD = 50 V 

## **Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|100|°C/W|
|TJ|Maximum lead temperature for soldering purpose|300|°C|



3/14 

**STD6NF10, STU6NF10** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 4. On/off states** 

|**Table 4.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 250µA, VGS=0|100|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= max rating<br>VDS=max rating,<br>TC= 125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2||4|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 3 A||0.22|0.25|Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward<br>transconductance|VDS=>ID(on)x<br>RDS(on)max,ID= 3A||34||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0||280<br>45<br>20||pF<br>pF<br>pF|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 50 V, ID= 3 A<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 13_)||6<br>10<br>20<br>3||ns<br>ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD =80 V, ID= 6 A,<br>VGS= 10 V, RG= 4.7Ω<br>(see_Figure 14_)||10<br>2.5<br>4|14|nC<br>nC<br>nC|



1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 

4/14 

**STD6NF10, STU6NF10** 

**Electrical characteristics** 

## **Table 6. Source drain diode** 

|**Table 6.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current<br>(pulsed)||||6<br>24|A<br>A|
|VSD (2)|Forward on voltage|ISD= 6 A, VGS= 0|||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 6 A, di/dt = 100 A/µs,<br>VDD= 10 V, Tj= 150 °C<br>(see_Figure 15_)||70<br>175<br>5||ns<br>nC<br>A|



1. Pulse width limited by safe operating area. 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

5/14 

**STD6NF10, STU6NF10** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

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**==> picture [155 x 150] intentionally omitted <==**

## **Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

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**==> picture [155 x 151] intentionally omitted <==**

## **Figure 6. Transconductance** 

**Figure 7. Static drain-source on resistance** 

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6/14 

**STD6NF10, STU6NF10** 

**Electrical characteristics** 

## **Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations** 

**==> picture [164 x 149] intentionally omitted <==**

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**Figure 10. Normalized gate threshold voltage vs. temperature** 

**==> picture [164 x 149] intentionally omitted <==**

**Figure 11. Normalized on resistance vs. temperature** 

**==> picture [164 x 149] intentionally omitted <==**

**Figure 12. Source-drain diode forward characteristics** 

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7/14 

**STD6NF10, STU6NF10** 

**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**==> picture [209 x 88] intentionally omitted <==**

**Figure 15. Test circuit for inductive load switching and diode recovery times** 

**==> picture [200 x 117] intentionally omitted <==**

**Figure 17. Unclamped inductive waveform** 

**==> picture [164 x 134] intentionally omitted <==**

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8/14<br>**----- End of picture text -----**<br>


**Figure 14. Gate charge test circuit** 

**==> picture [179 x 121] intentionally omitted <==**

**Figure 16. Unclamped Inductive load test circuit** 

**==> picture [179 x 119] intentionally omitted <==**

**Figure 18. Switching time waveform** 

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**STD6NF10, STU6NF10** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 

9/14 

**STD6NF10, STU6NF10** 

**Package mechanical data** 

**==> picture [390 x 527] intentionally omitted <==**

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TO-251 (IPAK) mechanical data<br>mm.<br>DIM.<br>min. typ max.<br>A 2.20 2.40<br>A1 0.90 1.10<br>b 0.64 0.90<br>b2 0.95<br>b4 5.20 5.40<br>c 0.45 0.60<br>c2 0.48 0.60<br>D 6.00 6.20<br>E 6.40 6.60<br>e 2.28<br>e1 4.40 4.60<br>H 16.10<br>L 9.00 9.40<br>(L1) 0.80 1.20<br>L2 0.80<br>V1 10  [o]<br>0068771_H<br>**----- End of picture text -----**<br>


10/14 

**STD6NF10, STU6NF10** 

**Package mechanical data** 

||||**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|**TO-252 (DPAK) mechanical data**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||
|||||||||||||
|**DIM.**||||||**mm.**||||||
||||**min.**|||**typ**|||||**max.**|
|A|||2.20||||||||2.40|
|A1|||0.90||||||||1.10|
|A2|||0.03||||||||0.23|
|b|||0.64||||||||0.90|
|b4|||5.20||||||||5.40|
|c|||0.45||||||||0.60|
|c2|||0.48||||||||0.60|
|D|||6.00||||||||6.20|
|D1||||||5.10||||||
|E|||6.40||||||||6.60|
|E1||||||4.70||||||
|e||||||2.28||||||
|e1|||4.40||||||||4.60|
|H|||9.35||||||||10.10|
|L|||1|||||||||
|L1||||||2.80||||||
|L2||||||0.80||||||
|L4|||0.60||||||||1|
|R||||||0.20||||||
|||||o|||||||~~8 ~~o|
|~~V~~|||~~0~~|||||||||
|||||||||||||
|||||||||||0068772_G||
|||||||||||||
|||||||||||||
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|||||||||||||
|||||||||||||
|||||||||||||



11/14 

**STD6NF10, STU6NF10** 

**Packing mechanical data** 

## **5 Packing mechanical data** 

## **DPAK FOOTPRINT** 

**==> picture [358 x 393] intentionally omitted <==**

**----- Start of picture text -----**<br>
All dimensions are in millimeters<br>TAPE AND REEL SHIPMENT<br>REEL MECHANICAL DATA<br>mm inch<br>DIM.<br>to at slot location MIN. MAX. MIN. MAX.<br>A 330 12.992<br>| Ie B 1.5 0.059<br>| AR<br>C 12.8 13.2 0.504 0.520<br>1[ | iG . . Cc \ i<br>of Ay) 1]<br>D 20.2 0.795<br>G 16.4 18.4 0.645 0.724<br>Full radius 3S ‘ Tape slot — G measured<br>N 50 1.968<br>tape start T 22.4 0.881<br>in core for | at hub<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>2500 2500<br>mm inch<br>DIM. —-— —<br>MIN. MAX. MIN. MAX.<br>A0 6.8 7 0.267 0.275<br>ee B0B1 10.4 10.612.1 ee 0.409 0.4170.476 Bier Ne<br>D 1.5 1.6 0.059 0.063<br>rl D1 1.5 0.059 [ff teed te “<br>ee ee ee ee >. os<br>E 1.65 1.85 0.065 0.073<br>ee F 7.4 ee 7.6 0.291 0.299 oemes ma Pi) Sheri<br>K0 2.55 2.75 0.100 0.108<br>r | | fff around Bo User Direction of Feed<br>P0 3.9 4.1 0.153 0.161<br>ee ee ee oeTRL<br>P1 7.9 8.1 0.311 0.319<br>P2 1.9 2.1 0.075 0.082<br>Pf), R 40 1.574 EES<br>a W a 15.7 16.3 ee 0.618 0.641 FEED DIRECTION, Bending radius<br>**----- End of picture text -----**<br>


12/14 ~~© 2~~ 

**STD6NF10, STU6NF10** 

**Revision history** 

## **6 Revision history** 

## **Table 7. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-Jun-2004|3|Complete version|
|20-Jul-2006|4|New template, no content change|
|16-Sep-2008|5|Corrected part number: STU6NF10|
|19-Nov-2008|6|Marking label in_Table 1_for the device in IPAK has been<br>updated.<br>IGSSvalue in_Table 4_has been updated|



13/14 

**STD6NF10, STU6NF10** 

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14/14 



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