# Fast / Ultrafast Diode, 600 V, 8 A, Single, 3.6 V, 30 ns, 180 A

![Product image](https://novapart.co/image/farnell:2806751/)

**URL**: https://novapart.co/products/STTH806DTI/fast-ultrafast-diode-600-v-8-a-single-36-30-ns-180
**SKU**: STTH806DTI
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.8000
**Stock**: 200+
**Lead Time**: 120 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:3.6V; Reverse Recovery Time trr Max:30ns; Forward Surge Curre

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 3.6V |
| Forward Surge Current | 180A |
| Reverse Recovery Time | 30ns |
| Average Forward Current | 8A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2806751/)

**==> picture [61 x 39] intentionally omitted <==**

## **STTH806DTI** 

## Tandem 600 V hyperfast boost diode 

## **Table 1. Main product characteristics** 

|IF(AV)|8 A|
|---|---|
|VRRM|600 V|
|Tj (max)|150° C|
|VF (max)|2.24 V|
|IRM (typ.)|4 A|
|trr (typ.)|13 ns|



**==> picture [70 x 88] intentionally omitted <==**

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1 2<br>2<br>1<br>**----- End of picture text -----**<br>


**Insulated TO-220AC** 

## **Features and benefits** 

- Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions 

- Designed for high di/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks 

- Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes 

- Insulation  (2500 VRMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink 

- Static and dynamic equilibrium of internal diodes are warranted by design 

## **Description** 

The TURBOSWITCH “H” is an ultra high performance  diode composed of  two 300 V  dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. 

## **Table 2. Order codes** 

|**Table 2.**<br>**Order codes**||
|---|---|
|**Part number**|**Marking**|
|STTH806DTI|STTH806DTI|



- Package Capacitance: C = 7 pF 

## **Table 3. Absolute ratings (limiting values)** 

|**Table 3.**|**Absolute ratings (limiting values)**|**Absolute ratings (limiting values)**|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VRRM|Repetitive peak reverse voltage||600|V|
|IF(RMS)|RMS forward voltage||14|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms   sinusoidal|180|A|
|Tstg|Storage temperature range||-65 to + 150|° C|
|Tj|Maximum operating junction temperature||150|° C|



1/7 

July 2007 

Rev 5 

_www.st.com_ 

**Characteristics** 

**STTH806DTI** 

## **1 Characteristics** 

## **Table 4. Thermal parameter** 

|**Table 4.**|**Thermalparameter**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rth(j-c)|Junction to case thermal resistance|2.6|°C/W|



## **Table 5. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25° C|VR= VRRM|||10|µA|
|||Tj= 125° C|||15|100||
|VF (2)|Forward voltage drop|Tj= 25° C|IF= 8 A|||3.6|V|
|||Tj= 150° C|||1.95|2.4||



1. Pulse test: tp = 100 ms, δ < 2% 

2. Pulse test: tp = 380 µs, δ < 2% 

To evaluate the conduction losses use the following equation: P = 1.7 x IF(AV) + 0.087 IF2(RMS) 

## **Table 6. Dynamic characteristics** 

|**Table 6.**|**Dynamic characteristics**|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Test conditions**|**Min**|**Typ**|**Max**|**Unit**|
|trr|Reverse recovery time|Tj= 25° C|IF= 0.5 A, Irr= 0.25 A, IR= 1 A||13||ns|
||||IF= 1 A, dIF/dt = - 50 A/µs<br>VR= 30 V|||30||
|IRM|Reverse recovery current|Tj= 125° C|IF= 8 A, VR= 400,<br>VdIF/dt = - 200 A/µs||4|5.5|A|
|S|Reverse recovery softness factor||||0.4|||
|Qrr|Reverse recovery charges||||50|||



## **Table 7. Turn-on switching characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|tfr|Forward recovery time|Tj= 25° C|IF= 8 A, dIF/dt = 100 A/µs<br>VFR= 1.1 x VFmax|||200|ns|
|VFP|Forward recovery voltage|Tj= 25° C|IF= 8 A, dIF/dt = 100 A/µs|||7|V|



2/7 

**STTH806DTI** 

**Characteristics** 

**Figure 1. Conduction losses versus average Figure 2. Forward voltage drop versus current forward current** 

**==> picture [463 x 340] intentionally omitted <==**

**----- Start of picture text -----**<br>
P(W) IFM(A)<br>30 100<br>25 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 (maximum values)T =125°Cj<br>20 δ = 1 T =125°Cj<br>(typical values)<br>15 10 (maximum values)T =25°Cj<br>10<br>T<br>5<br>IF(AV)(A) δ [=tp/T] tp VFM(V)<br>0 1<br>0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8<br>Figure 3. Relative variation of thermal  Figure 4. Peak reverse recovery current<br>impedance junction to case  versus dIF/dt (typical values)<br>versus pulse duration<br>IRM(A)<br>Zth(j-c)/Rth(j-c) 9<br>1.0 8 VT =125°CjR=400V IF=2 x IF(AV)<br>0.8 7 IF=IF(AV)<br>6 IF=0.5 x IF(AV)<br>0.6 δ = 0.5<br>5<br>4<br>0.4 δ = 0.2<br>δ = 0.1 T 3<br>0.2 2<br>Single pulse<br>0.0 tp(s) δ [=tp/T] tp 1 dIF/dt(A/µs)<br>1E-3 1E-2 1E-1 1E+0 0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 5. Reverse recovery time versus dIF/dt Figure 6. Reverse charges versus dIF/dt (typical values) (typical values)** 

**==> picture [463 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
trr(ns) Qrr(nC)<br>60 140<br>50 VT =125°CjR=400V 120 VT =125°CjR=400V IF=2 x IF(AV)<br>40 IF=2 x IF(AV) 100 IF=IF(AV)<br>IF=IF(AV) 80<br>30 IF=0.5 x IF(AV) IF=0.5 x IF(AV)<br>60<br>20<br>40<br>10 20<br>dIF/dt(A/µs) dIF/dt(A/µs)<br>0 0<br>0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500<br>**----- End of picture text -----**<br>


3/7 

**Characteristics** 

**STTH806DTI** 

**Figure 7. Softness factor versus dIF/dt (typical values)** 

**Figure 8. Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125° C)** 

**==> picture [463 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
S<br>2.6<br>0.6 IVFR<2xI=400VF(AV) 2.42.2 Reference: T =125°CVIFR=I=400VF(AV)j<br>0.5 T =125°Cj<br>2.0<br>0.4 1.8 S<br>1.6<br>1.4<br>0.3<br>1.2<br>1.0<br>0.2<br>0.8 IRM<br>0.6<br>0.1<br>0.4<br>0.0 dIF/dt(A/µs) 0.2 T (°C)j<br>0 50 100 150 200 250 300 350 400 450 500 0.0<br>25 50 75 100 125<br>**----- End of picture text -----**<br>


## **Figure 10. Forward recovery time versus dIF/dt (typical values)** 

## **Figure 9. Transient peak forward voltage versus dIF/dt (typical values)** 

**==> picture [463 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
VFP(V) tfr(ns)<br>16 200<br>1514 IT =125°CFj=IF(AV) 180 VFR=1.1 x VIF=IF(AV)F max.<br>13 160 T =125°Cj<br>12<br>11 140<br>10<br>120<br>9<br>8 100<br>7<br>6 80<br>5 60<br>4<br>3 40<br>2<br>1 dIF/dt(A/µs) 20 dIF/dt(A/µs)<br>0 0<br>0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500<br>**----- End of picture text -----**<br>


4/7 

**STTH806DTI** 

**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: C 

- ● Recommended torque value: 0.4 to 0.6 Nm 

## **Table 8. TO-220AC insulated dimensions** 

|**I**|||||||**C**<br>**b2**<br>**c2**<br>**F**<br>**L**<br>**A**<br>**a1**<br>**a2**<br>**b1**<br>**c1**<br>**M**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||**Millimeters**|||**Inches**|||
||||||||||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|||||||||A|15.20||15.90|0.598||0.625|
|||||||||a1||3.75|||0.147||
||||||**B**||||||||||
||||||**Ø I**|||a2|13.00||14.00|0.511||0.551|
|||||||||B|10.00||10.40|0.393||0.409|
||||||||||||||||
||**4**|||||||b1|0.61||0.88|0.024||0.034|
||||||||||||||||
|||||||||b2|1.23||1.32|0.048||0.051|
|||||||||C|4.40||4.60|0.173||0.181|
|||||||||c1|0.49||0.70|0.019||0.027|
||||**l2**||||||||||||
|||||||||c2|2.40||2.72|0.094||0.107|
||||||||||||||||
|||||||||e|4.80||5.40|0.189||0.212|
|||||||||F|6.20||6.60|0.244||0.259|
||||||||||||||||
||||||**e**|||ØI|3.75||3.85|0.147||0.151|
||||||||||||||||
|||||||||I4|15.80|16.40|16.80|0.622|0.646|0.661|
|||||||||L|2.65||2.95|0.104||0.116|
|||||||||l2|1.14||1.70|0.044||0.066|
|||||||||M||2.60|||0.102||



In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 

5/7 

**Ordering information** 

**STTH806DTI** 

## **3 Ordering information** 

**Table 9. Ordering information** 

|**Part number**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|STTH806DTI|STTH806DTI|TO-220AC|2.3 g|50|Tube|



## **4 Revision history** 

## **Table 10. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|Oct-2003|2A|Initial release|
|May-2004|3|Reformatted|
|29-Jun-2005|4|Corrections to typographical errors. No technical<br>changes.|
|11-Jul-2007|5|Reformatted to current standards. Removed IPEAK<br>parameter from_Table 3: Absolute ratings (limiting_<br>_values)_.|



6/7 

**STTH806DTI** 

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7/7 



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