# Fast / Ultrafast Diode, 1 kV, 30 A, Dual Isolated, 2 V, 42 ns, 240 A ![Product image](https://novapart.co/image/farnell:1295292/) **URL**: https://novapart.co/products/STTH6110TV2/fast-ultrafast-diode-1-kv-30-a-dual-isolated-2-v **SKU**: STTH6110TV2 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes **Price**: €11.8600 **Stock**: 100+ **Lead Time**: 127 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):30A; Diode Configuration:Dual Isolated; Forward Voltage VF Max:320mV; Reverse Recovery Time trr Max:42ns; Forward Surge Curr ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 4 Pin | | Product Range | STTH6 | | Qualification | - | | Diode Case Style | ISOTOP | | Diode Configuration | Dual Isolated | | Forward Voltage Max | 2V | | Forward Surge Current | 240A | | Reverse Recovery Time | 42ns | | Average Forward Current | 30A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 1kV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1295292/) ## **STTH6110TV** ~~S/n~~ ## Ultrafast recover - hi h volta e diode y g g ## **Main product characteristics** **==> picture [152 x 69] intentionally omitted <==** **----- Start of picture text -----**
A1 K1 A1 K2
A2 K2 K1 A2
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I 2 x 30 A F(AV) VRRM 1000 V T 150° C j A2 K2 K1 A2 VF (typ) 1.3 V trr (typ) 42 ns ~~——~~ a ~~e~~ **==> picture [190 x 110] intentionally omitted <==** **----- Start of picture text -----**
A1 A1
K1 K2
A2 K1
K2 A2
ISOTOP ISOTOP
STTH6110TV1 STTH6110TV2
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## **Features and benefits** - Ultrafast, soft recovery - Very low conduction and switching losses - High frequency and/or high pulsed current operation - High reverse voltage capability - High junction temperature - Insulated package - Electrical insulation = 2500 VRMS Capacitance = 45 pF ## **Description** The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. ## **Order codes** |**Part Number**|**Marking**| |---|---| |STTH6110TV1|STTH6110TV1| |STTH6110TV2|STTH6110TV2| These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of the equipment 1/8 March 2006 Rev 1 _www.st.com_ **Characteristics** **STTH6110TV** ## **1 Characteristics** ## **Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)** |**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**| |---|---|---|---|---|---| |VRRM|Repetitive peak reverse voltage|||1000|V| |IF(RMS)|RMS forward current|||60|A| |IF(AV)|Average forward current,δ= 0.5|Per diode|Tc= 60° C|30|A| |IFRM|Repetitive peak forward current|tp= 5 µs, F = 5 kHz square||350|A| |IFSM|Surge non repetitive forward current|tp= 10 ms Sinusoidal||240|A| |Tstg|Storage temperature range|||-65 to + 150|°C| |Tj|Maximum operating junction temperature|||150|°C| ## **Table 2. Thermal parameters** |**Symbol**|**Parameter**||**Value**|**Unit**| |---|---|---|---|---| |Rth(j-c)|Junction to case|Per diode|1.4|° C/W| |||Total|0.75|| |Rth(c)|Coupling thermal resistance||0.1|| When the diodes are used simultaneously: ∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) ## **Table 3. Static electrical characteristics** |**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |IR
(1)|Reverse leakage current|Tj= 25° C|VR= VRRM|||15|µA| |||Tj= 125° C|||10|100|| |VF
(2)|Forward voltage drop|Tj= 25° C|IF= 30 A|||2.0|V| |||Tj= 100° C|||1.4|1.8|| |||Tj= 150° C|||1.3|1.7|| 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.013 IF2(RMS) 2/8 **STTH6110TV** **Characteristics** **Table 4. Dynamic characteristics** |**Symbol**
**Parameter**|**Parameter**
**Test conditions**
**Min.**
**Typ**|**Typ**
**Max.**|**Unit**| |---|---|---|---| |trr
Reverse recovery time|Reverse recovery time
IF= 1 A, dIF/dt = -50 A/µs,
VR= 30 V, Tj= 25° C
IF= 1 A, dIF/dt = -100 A/µs,
VR= 30 V, Tj= 25° C
IF= 1 A, dIF/dt = -200 A/µs,
VR= 30 V, Tj= 25° C|100|ns| |||53
70|| |||42
55|| |IRM
Reverse recovery current|Reverse recovery current
IF= 30 A, dIF/dt = -200 A/µs,
VR= 600 V, Tj= 125° C|24
32|A| |S
Softness factor|Softness factor
IF= 30 A, dIF/dt = -200 A/µs,
VR= 600 V, Tj= 125° C|1|| |tfr
Forward recovery time|Forward recovery time
IF= 30 A dIF/dt = 100 A/µs
VFR= 1.5 x VFmax, Tj= 25° C|450|ns| |VFP
Forward recovery voltage|Forward recovery voltage
IF= 30 A, dIF/dt = 100 A/µs,
Tj= 25° C|5|V| ## **Figure 1. Conduction losses versus average current** ## **Figure 2. Forward voltage drop versus forward current** **==> picture [432 x 129] intentionally omitted <==** **----- Start of picture text -----**
P(W) IFM(A)
70 200
C1] =0.05 =0.1 =0.2 l_| =0.5 =1 L_| a a A
180
60 Tj=150°C
160 (Maximum values)
50 ee eeeA L 140 Poa YA| 4 ae
ee ee eee YWA
40 en awa a4 eee 120 po Tj=150°C [7+ +AHA
100 (Typical values)
30
It AA eH HE 80 e 2a e
20 | | AsAzgee! Tt 60 ee a APA (Maximum values)Tj=25°C
T 40
10
IF(AV)(A) 20 VFM(V)
0 LAT | TT e e 0 [Sa eee a
0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
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## **Figure 3. Relative variation of thermal impedance junction to case versus pulse duration** ## **Figure 4. Peak reverse recovery current versus dIF/dt (typical values)** **==> picture [462 x 196] intentionally omitted <==** **----- Start of picture text -----**
Zth(j-c)/Rth(j-c) IRM(A)
1.00.9 EAE Single pulse 2 6050 PEE TVjR=125°C=600V rie ee E ELLE LET ELL IF= 2 x IF(AV) LE
0.8 a A PEEP ee een IF= IF(AV) BaPLt san|
0.7 EeYAZA 40 H-AHEHH-H EEsae REE
0.6 ||a ene IF=0.5 x IF(AV) | | | e BrT |
0.50.4 eeeaaAT aa 3020 CLLBeesea[aes -2cee peeeTreeee
0.3 oe Litt Peeper TT ty TT Ty Tt
a A RA EEEEEELELELLLL
0.2 aa 10 || AALFTEEEE EE
0.10.0 eeoni se seir ee ea tp(s) Leeea 0 4MEPA TPPETT ttt tt a dIF/dt(A/µs) LLLPitt
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 50 100 150 200 250 300 350 400 450 500
3/8
Se
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**Characteristics** **STTH6110TV** **Figure 5. Reverse recovery time versus dIF/dt (typical values)** **Figure 6. Reverse recovery charges versus dIF/dt (typical values)** **==> picture [462 x 143] intentionally omitted <==** **----- Start of picture text -----**
trr(ns) Qrr(µC)
700 8
600 IF= 2 x IF(AV) TVjR=125°C=600V 7 TVjR=125°C=600V IF= 2 x IF(AV)
6
500
5
400 IF= IF(AV)
IF= IF(AV) 4
300
3
200 IF=0.5 x IF(AV)
2
100 dIF/dt(A/µs) IF=0.5 x IF(AV) 1 dIF/dt(A/µs)
0 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500
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**Figure 7. Softness factor versus dIF/dt (typical values)** **Figure 8. Relative variations of dynamic parameters versus junction temperature** **==> picture [462 x 147] intentionally omitted <==** **----- Start of picture text -----**
S factor
1.50 2.0
IFTV = 2 x IjR=125°C=600VF(AV) 1.81.6 Sfactor Reference: TVIFR = I=600VF(AV)j=125°C
1.25
1.4
1.2
1.00 1.0
0.8 IRM
0.6
0.75
0.4 tRR
dIF/dt(A/µs) 0.20.0 QRR T (°C)j
0.50
25 50 75 100 125
0 50 100 150 200 250 300 350 400 450 500
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4/8 **STTH6110TV** **Characteristics** **Figure 9. Transient peak forward voltage versus dIF/dt (typical values)** ## **Figure 10. Forward recovery time versus dIF/dt (typical values)** **==> picture [462 x 141] intentionally omitted <==** **----- Start of picture text -----**
VFP(V) tfr(ns)
25 1100
20 TIFj=125°C = IF(AV) 1000900 VFR = 1.5 x VTIFj=125°C = IF(AV)F max.
800
15
700
600
10
500
400
5
300
dIF/dt(A/µs) dIF/dt(A/µs)
0 200
0 100 200 300 400 500 0 100 200 300 400 500
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## **Figure 11. Junction capacitance versus reverse voltage applied (typical values)** **==> picture [201 x 128] intentionally omitted <==** **----- Start of picture text -----**
C(pF)
1000
F=1MHz
Vosc=30mVRMS
Tj=25°C
100
VR(V)
10
1 10 100 1000
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5/8 **STTH6110TV** **Package information** ## **2 Package information** Epoxy meets UL94, V0 Cooling method: by conduction (C) ## **Table 5. ISOTOP dimensions** |**D**||||||||||||**D1**
**G**
**C**
**C2**|**REF.**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||**Millimeters**||**Inches**|| ||**A**|||||**E**||||||||**Min.**|**Max**|**Min.**|**Max.**| |||||||**G2**|||||||||||| ||||||||||||||A|11.80|12.20|0.465|0.480| ||||**A1**||||||||||A1|8.90|9.10|0.350|0.358| ||||||||||||||B|7.8|8.20|0.307|0.323| |||||||**E2**|||||||C|0.75|0.85|0.030|0.033| |||||||**F1**
**F**|||||||||||| ||||||||||||||C2|1.95|2.05|0.077|0.081| ||||||||||||||D|37.80|38.20|1.488|1.504| ||**S**||||||||||||||||| ||||**B**
**P1**||||||||||D1|31.50|31.70|1.240|1.248| ||||||||||||||E|25.15|25.50|0.990|1.004| ||||||||||||||||||| ||||||||||||||E1|23.85|24.15|0.939|0.951| ||||||||||||||||||| ||||||||||||||E2|24.80 typ.||0.976 typ.|| ||||||||||||||G|14.90|15.10|0.587|0.594| ||||||||||||||G1|12.60|12.80|0.496|0.504| ||||||||||||||||||| ||||||||||||||G2|3.50|4.30|0.138|0.169| ||||||||||||||||||| ||||||||**G1**
**Ø**|||**P**|||F|4.10|4.30|0.161|0.169| ||||||||||||||F1|4.60|5.00|0.181|0.197| ||||||||||||||P|4.00|4.30|0.157|0.69| ||||||||**E1**||||||||||| ||||||||||||||||||| ||||||||||||||P1|4.00|4.40|0.157|0.173| ||||||||||||||S|30.10|30.30|1.185|1.193| In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 **STTH6110TV** **Ordering information** ## **3** ## **Ordering information** |**Part Number**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**| |---|---|---|---|---|---| |STTH6110TV1|STTH6110TV1|ISOTOP|27 g|10|Tube| |STTH6110TV2|STTH6110TV2|ISOTOP|27 g|10|Tube| ## **4 Revision history** |**Date**|**Revision**|**Description of Changes**| |---|---|---| |22-Feb-2006|1|First issue.| 7/8 **STTH6110TV** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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