# Fast / Ultrafast Diode, 600 V, 80 A, Dual Common Cathode, 1.78 V, 90 ns, 210 A

![Product image](https://novapart.co/image/farnell:2341630/)

**URL**: https://novapart.co/products/STTH60L06CW/fast-ultrafast-diode-600-v-80-a-dual-common
**SKU**: STTH60L06CW
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €3.8900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3 Pin |
| Product Range | STTH6 |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.78V |
| Forward Surge Current | 210A |
| Reverse Recovery Time | 90ns |
| Average Forward Current | 80A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2341630/)

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® STTH60L06C<br>**----- End of picture text -----**<br>


## TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER 

**Table 1: Main Product Characteristics** 

|**IF(AV)**|**Up to 2 x 40 A**|
|---|---|
|**VRRM**|**600 V**|
|**Tj**|**175°C**|
|**VF (typ)**|**1.0 V**|
|**trr (max)**|**65 ns**|



## **FEATURES AND BENEFITS** 

- Ultrafast switching 

- Low reverse current 

- Low thermal resistance 

- Reduces switching & conduction losses 

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A1<br>K<br>A2<br>A2<br>K<br>A1<br>TO-247<br>STTH60L06CW<br>**----- End of picture text -----**<br>


## **DESCRIPTION** 

The STTH60L06, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. 

## **Table 2: Order Codes** 

|**Table 2: Order Codes**||
|---|---|
|**Part Number**|**Marking**|
|STTH60L06CW|STTH60L06CW|



**Table 3: Absolute Ratings** (limiting values, per diode) 

|**Symbol**|**Parameter**|||**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|||600|V|
|IF(RMS)|RMS forward voltage|||60|A|
|IF(AV)|Average forward current<br>δ= 0.5|Tc = 125°C<br>Tc = 110°C|Per diode<br>Per devic|<br>e<br>30<br>60|A|
|||Tc = 100°C<br>Tc = 80°C|Per diode<br>Per devic|<br>e<br>40<br>80||
|IFSM|Surge non repetitive forward current|tp = 10ms sinusoidal||210|A|
|Tstg|Storage temperature range|||-65 to + 175|°C|
|Tj|Maximum operating junction temperature|||175|°C|



September 2004 

1/6 

REV. 1 

**STTH60L06C** 

**Table 4: Thermal Resistance** 

|**Symbol**|**Parameter**||**Value (max).**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case|Per diode|1.05|°C/W|
|||Total|0.68||
|Rth(c)|Coupling||0.3|°C/W|



When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 

**Table 5: Static Electrical Characteristics** (per diode) 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR*|Reverse leakage current|Tj= 25°C|VR= VRRM|||25|µA|
|||Tj= 150°C|||80|800||
|VF**|Forward voltage drop|Tj= 25°C|IF= 30A|||1.55|V|
|||Tj= 150°C|||1.0|1.25||
|||Tj= 25°C|IF=60A|||1.78||
|||Tj= 150°C|||1.24|1.55||



Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 

To evaluate the conduction losses use the following equation: P = 0.95 x IF(AV) + 0.010 IF[2] (RMS) 

**Table 6: Dynamic Characteristics** (per diode) 

|**Symbol**|**Parameter**||**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|trr|Reverse recovery<br>time|Tj= 25°C|IF= 0.5A   Irr = 0.25A  IR=1A|||65|ns|
||||IF= 1A   dIF/dt = 50 A/µs  VR=30V||65|90||
|IRM|Reverse recovery<br>current|Tj= 125°C|IF= 30A      VR= 400V<br>dIF/dt = 100 A/µs||11.5|16|A|
|tfr|Forward recovery<br>time|Tj= 25°C|IF= 30A      dIF/dt = 100 A/µs<br>VFR= 1.1 x VFmax|||500|ns|
|VFP|Forward recovery<br>voltage|Tj= 25°C|IF= 30A     dIF/dt = 100 A/µs<br>VFR= 1.1 x VFmax||2.5||V|



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**STTH60L06C** 

**Figure 1: Conduction losses versus average forward current (per diode)** 

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P(W)<br>80<br>70 δ = 0.1 δ = 0.2 δ = 0.5<br>δ = 0.05<br>60<br>50 δ = 1<br>40<br>30<br>20 T<br>10<br>IF(AV)(A) δ [=tp/T] tp<br>0<br>0 10 20 30 40 50<br>**----- End of picture text -----**<br>


**Figure 3: Relative variation of thermal impedance junction to case versus pulse duration** 

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Zth(j-c)/Rth(j-c)<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>T<br>0.2<br>Single pulse<br>0.1 tp(s) δ [=tp/T] tp<br>0.0<br>1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode)** 

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trr(ns)<br>800<br>VR=400V<br>700 T =125°Cj<br>600<br>500 IF=2 x IF(AV)<br>400 IF=IF(AV)<br>IF=0.5 x IF(AV)<br>300<br>200<br>100<br>dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 2: Forward voltage drop versus forward current (per diode)** 

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IFM(A)<br>100<br>90<br>T =150°Cj<br>80 (maximum values)<br>70<br>T =150°Cj<br>60 (typical values)<br>50 (maximum values)T =25°Cj<br>40<br>30<br>20<br>10<br>VFM(V)<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>Figure 4: Peak reverse recovery current versus<br>F/dt (typical values, per diode)/dt (typical values, per diode)<br>IRM(A)<br>45<br>VR=400V<br>40 T =125°Cj IF=2 x IF(AV)<br>35<br>IF=IF(AV)<br>30 IF=0.5 x IF(AV)<br>25<br>20<br>15<br>10<br>5<br>dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode)/dt (typical values, per diode)** 

**Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode)** 

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Qrr(nC)<br>3500<br>VR=400V<br>T =125°Cj<br>3000 IF=2 x IF(AV)<br>2500<br>2000 IF=IF(AV)<br>1500 IF=0.5 x IF(AV)<br>1000<br>500<br>dIF/dt(A/µs)<br>0<br>0 100 200 300 400 500<br>**----- End of picture text -----**<br>


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**STTH60L06C** 

**Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode)** 

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S factor<br>1.6<br>IF< 2 x IF(AV)<br>1.4 VT =125°CjR=400V<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>dIF/dt(A/µs)<br>0.0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode)** 

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VFP(V)<br>10<br>9 IT =125°CFj=IF(AV)<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1 dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 8: Relative variations of dynamic parameters versus junction temperature** 

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1.4<br>S factor<br>1.2<br>1.0<br>0.8<br>QRR<br>0.6 IF=IF(AV)<br>trr VR=400V<br>0.4 IRM Reference: T =125°Cj<br>0.2<br>T (°C)j<br>0.0<br>25 50 75 100 125<br>**----- End of picture text -----**<br>


**Figure 10: Forward recovery time versus dIF/dt (typical values, per diode)** 

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tfr(ns)<br>450<br>IF=IF(AV)<br>400 VFR=1.1 x VF max.<br>T =125°Cj<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>dIF/dt(A/µs)<br>0<br>0 100 200 300 400 500<br>**----- End of picture text -----**<br>


**Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode)** 

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C(pF)<br>1000<br>F=1MHz<br>VOSC=30mVRMS<br>T =25°Cj<br>100<br>VR(V)<br>10<br>1 10 100 1000<br>**----- End of picture text -----**<br>


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**STTH60L06C** 

**Figure 12: TO-247 Package Mechanical Data** 

|||||||D<br>M<br>E<br>A|**REF.**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||**Millimeters**|||**Inches**|||
|L||V<br>V|||Dia.|||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
||||||||A|4.85||5.15|0.191||0.203|
|||||||||||||||
||||||||D|2.20||2.60|0.086||0.102|
||||H||||E<br>|0.40||0.80|0.015||0.031|
||||||||F|1.00||1.40|0.039||0.055|
||||||||F1||3.00|||0.118||
||||||||F2||2.00|||0.078||
||||||||F3|2.00||2.40|0.078||0.094|
||L5||||F2<br>L4<br>L2<br>L1<br>L3<br>F3<br>F4||F4|3.00||3.40|0.118||0.133|
||||||||G||10.90|||0.429||
||||||||H|15.45||15.75|0.608||0.620|
||||||||L|19.85||20.15|0.781||0.793|
||||||||L1|3.70||4.30|0.145||0.169|
|||F1<br>V2<br>F(x3)|G<br>=|=|||L2||18.50|||0.728||
||||||F3<br>F4|||||||||
||||||||L3|14.20||14.80|0.559||0.582|
||||||||L4||34.60|||1.362||
||||||||L5||5.50|||0.216||
||||||||M|2.00||3.00|0.078||0.118|
||||||||V||5°|||5°||
|||||||||||||||
||||||||V2||60°|||60°||
||||||||Dia.|3.55||3.65|0.139||0.143|



## **Table 7: Ordering Information** 

|**Ordering type**|**Marking**|**Package**|**Weight**|**Baseqty**|**Delivery mode**|
|---|---|---|---|---|---|
|STTH60L06CW|STTH60L06CW|TO-247|4.46g|50|Tube|



- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.8 m.N. 

- Maximum torque value: 1.0 m.N. 

**Table 8: Revision History** 

|**Date**|**Revision**|**Description of Changes**|
|---|---|---|
|07-Sep-2004|1|First issue|



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**STTH60L06C** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics. 

All other names are the property of their respective owners 

© 2004 STMicroelectronics - All rights reserved 

**STMicroelectronics group of companies** 

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**www.st.com** 

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- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stth60l06cw/diode-standard-80a-600v-to-247/dp/2341630)
---

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