# Fast / Ultrafast Diode, 400 V, 60 A, Single, 830 mV, 50 ns, 600 A

![Product image](https://novapart.co/image/farnell:1295283/)

**URL**: https://novapart.co/products/STTH6004W/fast-ultrafast-diode-400-v-60-a-single-830-mv-50
**SKU**: STTH6004W
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €1.7200
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):60A; Diode Configuration:Single; Forward Voltage VF Max:830mV; Reverse Recovery Time trr Max:50ns; Forward Surge Current

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | STTH6 |
| Qualification | - |
| Diode Case Style | TO-247 |
| Diode Configuration | Single |
| Forward Voltage Max | 830mV |
| Forward Surge Current | 600A |
| Reverse Recovery Time | 50ns |
| Average Forward Current | 60A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1295283/)

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## **STTH6004W** 

## Ultrafast high voltage rectifier 

**Table 1: Main product characteristics** 

|**IF(AV)**|**60 A**|
|---|---|
|**VRRM**|**400 V**|
|**Tj (max)**|**175 °C**|
|**VF (typ)**|**0.83 V**|
|**trr (max)**|**50 ns**|



## **Features and benefits** 

- Ultrafast switching 

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A<br>K<br>DO-247<br>STTH6004W<br>**----- End of picture text -----**<br>


- Low reverse current 

- Low thermal resistance 

- Reduces switching & conduction losses 

## **Description** 

The STTH6004W uses ST 400V technology and is specially suited for use in switching power supplies, welding equipment and industrial applications, as an output rectification diode. 

**Table 2: Order codes** 

|**Table 2: Order codes**||
|---|---|
|**Part number**|**Marking**|
|STTH6004W|STTH6004W|



**Table 3: Absolute ratings** (limiting values) 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage||400|V|
|IF(RMS)|RMS forward current||90|A|
|IF(AV)|Average forward current|Tc= 125 °Cδ= 0.5|60|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|600|A|
|Tstg|Storage temperature range||-65 to + 175|°C|
|Tj|Maximum operating junction temperature||175|°C|



October 2005 

1/6 

REV. 1 

**STTH6004W** 

**Table 4: Thermal Resistance** 

|**Symbol**|**Parameter**|**Value (max).**|**Unit**|
|---|---|---|---|
|Rth(j-c)<br>Junction to case|Junction to case|0.70|°C/W|



**Table 5: Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**<br>**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|IR*<br>Reverse leakage current|Reverse leakage current|Reverse leakage current<br>Tj= 25 °C<br>Tj= 150 °C|VR= VRRM||50|µA|
||||||100<br>1000||
|VF**<br>Forward voltage drop|Forward voltage drop|Tj= 25 °C<br>Tj= 150 °C|IF= 60 A||1.2|V|
||||||0.83<br>1.0||



Pulse test: * t = 5 ms, δ < 2% p ** tp = 380 µs, δ < 2% 

2 To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF (RMS) 

**Table 6: Dynamic characteristics** 

|**Symbol**<br>**Parameter**|**Parameter**|**Test conditions**|**Min**<br>**Typ**|**Typ**<br>**Max**<br>**Unit**|
|---|---|---|---|---|
|trr<br>Reverse recovery<br>time|Reverse recovery<br>time<br>Tj= 25 °C|= 25 °C<br>IF= 1 A   dIF/dt = 50 A/µs  VR=30 V<br>IF= 1 A   dIF/dt = 200 A/µs  VR=30 V|66|66<br>90<br>ns<br>36<br>50|
||||36||
|IRM<br>Reverse recovery<br>current|Reverse recovery<br>current<br>Tj= 125 °C|= 125 °C IF= 60 A      VR= 200 V<br>dIF/dt = 100 A/µs||15<br>A|
|Sfactor<br>Softness factor|Softness factor<br>Tj= 125 °C|= 125 °C IF= 60 A      VR= 200 V<br>dIF/dt = 100 A/µs|0.4|0.4|
|tfr<br>Forward recovery<br>time|Forward recovery<br>time<br>Tj= 25 °C|= 25 °C<br>IF= 60 A      dIF/dt = 200 A/µs<br>VFR= 1.1 x VFmax||600<br>ns|
|VFP<br>Forward recovery<br>voltage|Forward recovery<br>voltage<br>Tj= 25 °C|= 25 °C<br>IF= 60 A     dIF/dt = 200 A/µs<br>VFR= 1.1 x VFmax|3.2|3.2<br>V|



**Figure 1: Conduction losses versus average forward current** 

**Figure 2: Forward voltage drop versus forward current** 

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P(W) IFM(A)<br>80 200<br>=0.5 =1<br>70 aFEE EEE EE 180 a<br>=0.2 160 TJ=150°C<br>60 ;ft| | || tp| | |}tslA| AE eea | (Maximum values) ee eeed ae ee ee<br>=0.1 140<br>50 ee a =0.05 a ee 120 Se TJ=150°C re<br>40 100 (Typical values)<br>A a ee cae ee<br>80<br>30 ee| har HE Peet ot A<br>60<br>20 T<br>| (oFZ|0 eeei Do 40 AESS SSSOS”Se EP SI| EET<br>100 A IF(AV)(A) ao r p t 200 SS VFM (V) a e (Maximum values)TJ=25°C<br>0 10 20 30 40 50 60 70 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>**----- End of picture text -----**<br>


2/6 ~~9/2~~ 

**STTH6004W** 

**Figure 3: Relative variation of thermal impedance junction to case versus pulse duration** 

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Zth(j-c)/Rth(j-c)<br>1.0<br>0.9 Single pulse<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 tP(s)<br>0.0<br>1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**Figure 5: Reverse recovery time versus dIF/dt (typical values)** 

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t rr (ns)<br>300<br>IF=IF(AV)<br>250 TVjR=125°C=200V<br>200<br>150<br>100<br>50<br>dIF /dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 7: Reverse recovery softness factor versus dIF/dt (typical values)** 

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SFACTOR<br>0.8<br>IF < 2 x IF(AV)<br>0.7 VR=200V<br>Tj=125°C<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>dIF /dt(A/µs)<br>0.0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 4: Peak reverse recovery current versus dIF/dt (typical values)** 

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IRM(A)<br>45<br>40 VIRF=I=200VF(AV)<br>35 Tj=125°C<br>30<br>25<br>20<br>15<br>10<br>5<br>0 dIF /dt(A/µs)<br>0 50 100 150 200 250 300 350 400 450 500<br>Figure 6: Reverse recovery charges versus<br>F/dt (typical values)/dt (typical values)<br>Qrr (nC)<br>3000<br>IF=IF(AV)<br>2500 TVjR=125°C=200V<br>2000<br>1500<br>1000<br>500<br>dIF/dt(A/µs)<br>0<br>0 100 200 300 400 500<br>**----- End of picture text -----**<br>


**Figure 6: Reverse recovery charges versus dIF/dt (typical values)/dt (typical values)** 

**Figure 8: Relative variations of dynamic parameters versus junction temperature** 

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1.6<br>1.4 SFACTOR<br>1.2<br>1.0<br>0.8<br>IRM & tRR<br>0.6<br>0.4<br>QRR IF=IF(AV)<br>0.2 VR=200V<br>Tj (°C) Reference: Tj=125°C<br>0.0<br>25 50 75 100 125<br>**----- End of picture text -----**<br>


3/6 

**STTH6004W** 

**Figure 9: Transient peak forward voltage versus dIF/dt (typical values)** 

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**----- Start of picture text -----**<br>
VFP(V)<br>8<br>IF=IF(AV)<br>7 Tj=125°C<br>6<br>5<br>4<br>3<br>2<br>1<br>dI F /dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 10: Forward recovery time versus dIF/dt (typical values)** 

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**----- Start of picture text -----**<br>
t fr (ns)<br>1000<br>900 VFR=1.1 x VIF=IF(AV)F max.<br>800 Tj=125°C<br>700<br>600<br>500<br>400<br>300<br>200<br>100 dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


## **Figure 11: Junction capacitance versus reverse voltage applied (typical values)** 

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C(pF)<br>1000<br>F=1MHz<br>VOSC=30mVRMS<br>Tj=25°C<br>VR(V)<br>100<br>1 10 100 1000<br>**----- End of picture text -----**<br>


4/6 

**STTH6004W** 

**Figure 12: DO-247 Package mechanical data** 

||||||||L4<br>A<br>D<br>M<br>E|**REF.**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||**Millimeters**|||**Inches**|||
||||||||||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|L<br>L3||V<br>V||||Dia|||||||||
|||||||||A<br>|4.85<br>||5.15 <br>|0.191<br>||0.203<br>|
||||||||||||||||
|||||||||D|2.20||2.60|0.086||0.102|
||||H|||||E|0.40||0.80|0.015||0.031|
|||||||||F|1.00||1.40|0.039||0.055|
|||||||||F2||2.00|||0.078||
|||||||||F3|2.00||2.40|0.078||0.094|
|||||||||G||10.90|||0.429||
||L5|||||F3<br>L1<br>F2<br>L2|||||||||
|||||||||H|15.45||15.75|0.608||0.620|
|||||||L1<br>F2<br>L2|||||||||
|||||||||L|19.85||20.15|0.781||0.793|
|||||||||L1|3.70||4.30|0.145||0.169|
|||||||||L2||18.50|||0.728||
|||V2|G<br>F|F||F2||L3|14.20||14.80|0.559||0.582|
|||||||||L4||34.60|||1.362||
|||||||||L5<br>||5.50|||0.216||
|||||||||M|2.00||3.00|0.078||0.118|
|||||||||V||5°|||5°||
|||||||||V2||60°|||60°||
|||||||||Dia.|3.55||3.65|0.139||0.143|



In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 

**Table 7: Ordering information** 

|**Ordering type**|**Marking**|**Package**|**Weight**|**Baseqty**|**Delivery mode**|
|---|---|---|---|---|---|
|STTH6004W|STTH6004W|DO-247|4.40g|30|Tube|



- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.8 Nm. 

- Maximum torque value: 1.0 Nm. 

## **Table 8: Revision history** 

|**Date**|**Revision**|**Description of Changes**|
|---|---|---|
|18-Oct-2005|1|First issue|



5/6 

**STTH6004W** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics. 

All other names are the property of their respective owners 

© 2005 STMicroelectronics - All rights reserved 

**STMicroelectronics group of companies** 

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 

**www.st.com** 

6/6 



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