# Fast / Ultrafast Diode, 300 V, 50 A, Dual Common Cathode, 1.8 V, 27 ns, 200 A ![Product image](https://novapart.co/image/farnell:2806738/) **URL**: https://novapart.co/products/STTH50W03CW/fast-ultrafast-diode-300-v-50-a-dual-common **SKU**: STTH50W03CW **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes **Price**: €0.8170 **Stock**: 10+ **Lead Time**: 127 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):50A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.8V; Reverse Recovery Time trr Max:27ns; Forward ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3 Pin | | Product Range | - | | Qualification | - | | Diode Case Style | TO-247 | | Diode Configuration | Dual Common Cathode | | Forward Voltage Max | 1.8V | | Forward Surge Current | 200A | | Reverse Recovery Time | 27ns | | Average Forward Current | 50A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 300V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2806738/) ## **STTH50W03C** ## Turbo 2 ultrafast high voltage rectifier  **Datasheet production data** ## **Description** A1 The STTH50W03C uses ST Turbo 2 300 V K technology. It is especially suited to be used for A2 DC/DC and DC/AC converters in the secondary stage of MIG/MMA/TIG welding machines. Housed in ST's TO-247, this device offers high power integration for all welding machines and industrial applications. **Table 1. Device summary Symbol Value** A2 I 2 x 25 A K F(AV) A1 VRRM 300 V TO-247 trr (typ) 20 ns STTH50W03CW T 175 °C j VF (typ) 1 V ~~==~~ **Features**  Ultrafast switching  Low reverse recovery current  Low thermal resistance  Reduces switching losses  ECOPACK[®] 2 compliant component August 2013 DocID024734 Rev1 1/9 This is information on a product in full production. _www.st.com_ **Characteristics** **STTH50W03C** ## **1 Characteristics** **Table 2. Absolute ratings (limiting values per diode, at 25 °C, unless otherwise specified)** ||**specified)**|**specified)**|**specified)**||| |---|---|---|---|---|---| |**Symbol**|**Parameter**|||**Value**|**Unit**| |VRRM|Repetitive peak reverse voltage|||300|V| |IF(RMS)|Forward rms current|||40|A| |IF(AV)|Average forward current,= 0.5|Tc= 105 °C|Per diode|25|A| |||Tc= 100°C|Per device|50|| |IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal||200|A| |Tstg|Storage temperature range|||-65 to + 175|° C| |Tj|Maximum operating junction temperature|||+ 175|° C| **Table 3. Thermal resistance** |**Symbol**|**Parameter**||**Value**|**Unit**| |---|---|---|---|---| |Rth(j-c)|Junction to case|Per diode|1.8|°C / W| |||Total|1|| |Rth(c)|Coupling||0.2|| When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) **Table 4. Static electrical characteristics per diode** |**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |IR (1)|Reverse leakage
current|Tj= 25 °C|VR= VRRM|||15|µA| |||Tj= 125° C|||15|150|| |VF (2)|Forward voltage drop|Tj= 25° C|IF= 25 A|||1.5|V| |||Tj= 150 °C|||1.0|1.2|| |||Tj= 25° C|IF= 50 A|||1.8|| |||Tj= 150° C|||1.25|1.5|| 1. Pulse test: tp = 5 ms,  < 2% 2. Pulse test: tp = 380 µs,  < 2% To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.012 IF[2] (RMS) 2/9 DocID024734 Rev1 **STTH50W03C** **Characteristics** **Table 5. Dynamic electrical characteristics per diode** |**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |IRM
Reverse recovery current|Reverse recovery current|Tj= 125 °C|IF= 25 A, VR= 200 V
dIF/dt = -200 A/µs||7|9|A| |QRR
Reverse recovery charge|Reverse recovery charge||||170||nC| |Sfactor
Softness factor|Softness factor||||0.3||| |trr
Reverse recovery time|Reverse recovery time|Tj= 25 °C|IF= 1 A, VR= 30 V
dIF/dt = -100 A/µs||20|27|ns| |tfr
Forward recovery time|Forward recovery time|Tj= 25 °C|IF= 25 A, VFR= 1.2 V
dIF/dt = 400 A/µs|||120|ns| |VFP
Forward recovery voltage|Forward recovery voltage||||2.5|3.6|V| **Figure 1. Average forward power dissipation versus average forward current (per diode)** **Figure 2. Forward voltage drop versus forward current (typical values, per diode)** **==> picture [438 x 136] intentionally omitted <==** **----- Start of picture text -----**
45 PFA(V) [(W)] 1000.0 I F (A)
40 = 0.5 = 1
= 0.2
35 BEER 100.0
= 0.1 Ee ee | ERR
30 = 0.05
25 esey2AA A 10.0 to_ T j = 150 °C ZtA Tj = 25 °C 1a+ | 1
20
FEROS EE | = S4SeeS===—=
15 A ral Z| eS A SY A SS SS SS
A) A ee
10 SIE T 1.0 Lj] f | | |_| | | |_| _
5 Ir I F(AV) (A) =tp/T tp Sf V F (V)
0 Aor eo 0.1 Eteet ert
0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 2.5 3.0
**----- End of picture text -----**
**Figure 3. Forward voltage drop versus forward current (maximum values, per diode)** **Figure 4. Relative variation of thermal impedance junction to case versus pulse duration** **==> picture [439 x 136] intentionally omitted <==** **----- Start of picture text -----**
1000.0 SS I F (A) 1.0 Zth(j-c)/Rth(j-c) aOe
0.9
[
==ee | 0.8 SIH ee
100.0
SE]ee Tj = 150 °C ee | 0.7 aSEH ere
aSeeee | 0.6 E EEn
10.0 ee ee ee Tj = 25 °C | | | | | 0.5 Coe ryea oe
0.4
esse—36 _=§3332 () GSHAHHH
0.3
1.0 Seee eee eee a 0.2 seen Single pulse Cetoe ae ettio)ee
Ff ee HEE
V F (V) 0.1 tp(s)
0.1 iSERSee eee | ee 0.0 REE EE TH
0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
**----- End of picture text -----**
DocID024734 Rev1 3/9 **Characteristics** **STTH50W03C** **Figure 5. Peak reverse recovery current versus dI** F **/dt (typical values, per diode)** **Figure 6. Reverse recovery time versus dI** F **/dt (typical values, per diode)** **==> picture [462 x 146] intentionally omitted <==** **----- Start of picture text -----**
IRM (A) tRR(ns)
16 100
14 V T IjR F = I = = 200 V 125 F(AV)°C 9080 VTI FRj = I == 200 V 125 F(AV) °C
12
70
10 60
8 50
6 40
30
4
20
2
dIF/dt(A/µs) 10 dIF/dt(A/µs)
0 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500
**----- End of picture text -----**
**Figure 7. Reverse recovery charges versus dI** F **/dt (typical values, per diode)** **==> picture [215 x 135] intentionally omitted <==** **----- Start of picture text -----**
300 QRR(nC)
I F =I F(AV)
250 T VjR =125 °C =200 V
200
150
100
50
dI F /dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
**----- End of picture text -----**
**Figure 8. Reverse recovery softness factor versus dI** F **/dt (typical values, per diode)** **==> picture [204 x 134] intentionally omitted <==** **----- Start of picture text -----**
S FACTOR
0.8
IF=IF(AV)
0.7 TVjR=125 °C=200 V
0.6
0.5
0.4
0.3
0.2
0.1
dI F /dt(A/µs)
0.0
0 50 100 150 200 250 300 350 400 450 500
**----- End of picture text -----**
**Figure 9. Relative variations of dynamic parameters versus junction temperature** **==> picture [203 x 137] intentionally omitted <==** **----- Start of picture text -----**
2.0
S FACTOR IF=IF(AV)
1.5 Reference: TVjR=125 °C=200 V
1.0
IRM
0.5
QRR
0.0
25 50 75 100 125
Tj(°C)
**----- End of picture text -----**
**Figure 10. Transient peak forward voltage versus dI** F **/dt (typical values, per diode)** **==> picture [204 x 131] intentionally omitted <==** **----- Start of picture text -----**
VFP(V)
5
IF= IF(AV)
T j = 125°C
4
3
2
1
dIF/dt(A/µs)
0
200 250 300 350 400 450 500
**----- End of picture text -----**
4/9 DocID024734 Rev1 **STTH50W03C** **Characteristics** **Figure 11. Forward recovery time versus dI** F **/dt Figure 12. Junction capacitance versus reverse (typical values, per diode) voltage applied (typical values, per diode)** **==> picture [462 x 146] intentionally omitted <==** **----- Start of picture text -----**
140 tFR(ns) 100 C(pF)
I F = I F(AV) F = 1 MHz
120 V R = 1.2 V V OSC = 30 mV RMS
Tj= 125°C T j = 25°C
100
80
60
40
20
dIF/dt(A/µs) VR(V)
0 10
200 250 300 350 400 450 500 1 10 100 1000
**----- End of picture text -----**
DocID024734 Rev1 5/9 **STTH50W03C** **Package information** ## **2 Package information** - Epoxy meets UL94, V0 - Cooling method: by conduction (C) - Recommended torque value: 0.5 N·m - Maximum torque value: 1.0 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. ## **Figure 13. TO-247 dimension definitions** **==> picture [212 x 252] intentionally omitted <==** **----- Start of picture text -----**
V
V Dia.
A
H
L5
L
L2 L4
F1 F2 L1
F3
D
V2 L3
F4
F(x3)
M E
G
= =
**----- End of picture text -----**
6/9 DocID024734 Rev1 **STTH50W03C** **Package information** **Table 6. TO-247 dimension values** ||**Table 6. TO-247 dimension values**|**Table 6. TO-247 dimension values**|**Table 6. TO-247 dimension values**|**Table 6. TO-247 dimension values**|**Table 6. TO-247 dimension values**|**Table 6. TO-247 dimension values**| |---|---|---|---|---|---|---| |**Ref.**|**Dimensions**|||||| ||**Millimeters**|||**Inches**||| ||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ**|**Max.**| |A|4.85||5.15|0.191||0.203| |A1|2.20||2.60|0.086||0.102| |b|1.00||1.40|0.039||0.055| |b1|2.00||2.40|0.078||0.094| |b2|3.00||3.40|0.118||0.133| |c|0.40||0.80|0.015||0.031| |D(1)|19.85||20.15|0.781||0.793| |E|15.45||15.75|0.608||0.620| |e|5.30|5.45|5.60|0.209|0.215|0.220| |L|14.20||14.80|0.559||0.582| |L1|3.70||4.30|0.145||0.169| |L2|18.50 typ.|||0.728 typ.||| |P(2)|3.55||3.65|0.139||0.143| |R|4.50||5.50|0.177||0.217| |S|5.30|5.50|5.70|0.209|0.216|0.224| 1. Dimension D plus gate protrusion does not exceed 20.5 mm. 2. Resin thickness around the mounting hole is not less than 0.9 mm. DocID024734 Rev1 7/9 **Ordering information** **STTH50W03C** ## **3 Ordering information** **Table 7. Ordering information** |**Ordering type**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**| |---|---|---|---|---|---| |STTH50W03CW|STTH50W03CW|TO-247|4.46 g|50|Tube| ## **4** ## **Revision history** **Table 8. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |09-Aug-2013|1|First issue.| 8/9 DocID024734 Rev1 **STTH50W03C** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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