# Fast / Ultrafast Diode, 200 V, 30 A, Dual Common Cathode, 1.4 V, 25 ns, 140 A

![Product image](https://novapart.co/image/farnell:2325964/)

**URL**: https://novapart.co/products/STTH30W02CW/fast-ultrafast-diode-200-v-30-a-dual-common
**SKU**: STTH30W02CW
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.5830
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):30A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.4V; Reverse Recovery Time trr Max:25ns; Forwar

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | STTH3 |
| Qualification | - |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.4V |
| Forward Surge Current | 140A |
| Reverse Recovery Time | 25ns |
| Average Forward Current | 30A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2325964/)

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## **STTH30W02C** 

## Turbo 2 ultrafast high voltage rectifier 

**Datasheet**  **production data** 

## **Features** 

- Ultrafast switching 

- Low reverse recovery current 

- Low thermal resistance 

- Reduces switching losses 

- ECOPACK[®] 2 compliant component 

## **Description** 

The STTH30W02CW, uses ST Turbo 2, 200 V technology. It is especially suited to be used for DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine. Housed in ST's TO-247, this device offers high power integration for all welding machines and industrial applications. 

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A1<br>K<br>A2<br>A2<br>K<br>A1<br>TO-247<br>STTH30W02CW<br>**----- End of picture text -----**<br>


**Table 1.** 

## **Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|2 x 15 A|
|VRRM|200 V|
|trr(typ)|20 ns|
|Tj(max)|175 °C|
|VF(typ)|0.90 V|



October 2012 

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Doc ID 023273 Rev 1 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STTH30W02C** 

## **1 Characteristics** 

**Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|||200|V|
|IF(RMS)|Forward rms current|||30|A|
|IF(AV)|Average forward current,= 0.5|Tc= 125 °C|Per diode|15|A|
|||Tc= 115°C|Per device|30||
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal||140|A|
|Tstg|Storage temperature range|||-65 to + 175|°C|
|Tj|Maximum operating junction temperature|||+ 175|°C|



**Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|Rth(j-c)|Junction to case|Per diode|2.5|°C / W|
|||Total|1.5||
|Rth(c)|Coupling||0.5||



When diodes 1 and 2 are used simultaneously: 

Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) 

## **Table 4. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|||10|µA|
|||Tj= 125 °C|||5|50||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 15A|||1.20|V|
|||Tj= 150 °C|||0.90|1.05||
|||Tj= 25 °C|IF= 30 A|||1.4||
|||Tj= 150 °C|||1.1|1.3||



1. Pulse test: tp = 5 ms,  < 2% 

2. Pulse test: tp = 380 µs,  < 2% 

To evaluate the conduction losses use the following equation: 

P = 0.8 x IF(AV) + 0.0167 IF[2] (RMS) 

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**STTH30W02C** 

**Characteristics** 

**Table 5. Dynamic electrical characteristics** 

|**Symbol**<br>**Parameter**|**Parameter**<br>**Test conditions**|**Parameter**<br>**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|IRM<br>Reverse recovery current|Reverse recovery current<br>Tj= 125 °C<br>Reverse recovery charge<br>Softness factor|IF= 15 A, VR= 160 V<br>dIF/dt = -200 A/µs||7|9|A|
|QRR<br>Reverse recovery charge||||160||nC|
|Sfactor<br>Softness factor||||0.3|||
|trr<br>Reverse recovery time|Reverse recovery time<br>Tj= 25 °C|IF= 1 A, VR= 30 V<br>dIF/dt = -100 A/µs||20|25|ns|
|tfr<br>Forward recovery time|Forward recovery time<br>Tj= 25 °C|IF= 15 A, VFR= 1.1 V<br>dIF/dt = 100 A/µs|||200|ns|
|VFP<br>Forward recovery voltage|Forward recovery voltage<br>Tj= 25 °C|||1.6|2.4|V|



**Figure 1. Average forward power dissipation Figure 2. Forward voltage drop versus versus average forward current forward current (per diode) (per diode)** 

**==> picture [450 x 354] intentionally omitted <==**

**----- Start of picture text -----**<br>
IFM(A)<br>PF(AV)(W) 1000.0<br>24<br>Sooo Z | SSS SSS<br>δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 T j =150°C<br>20 (Maximum values)<br>100.0<br>FCCC rt A) 6EE__ ee<br>LIT ET EYE Ty Ae SS T j =150 °C<br>16 (Typical values)<br>Bee eee 4eeer ae |] —__—____—<br>12 FOOT ee f 10.0 p (Maximum values)Tj = 25 °C San<br>8 COCO f SA ee<br>1.0<br>T<br>4 H LLegetOzer| IF(AV)(A) | Sea ee ee ee V FM (V)<br>δ = tp/T tp 0.1<br>0 A LAT | | | | a) PTT Ett ty 0.0 RE 0.5 1.0 1.5 2.0 S 2.5 3.0 3.5<br>0 2 4 6 8 10 12 14 16 18 20<br>Figure 3. Relative variation of thermal  Figure 4. Peak reverse recovery current<br>impedance junction to case versus  versus dI F /dt (typical values, per<br>pulse durationulse duration diode)<br>Zth(j-c)/Rth(j-c) 16 IRM(A)<br>1.0 — ee<br>0.9 14 VI FR = 160 V= IF(AV)<br>a ed T j =125 °C ee eae<br>0.80.7 See)arH rt AHEHE EH 12 eREEREee EEEerr<br>10<br>0.60.5 SRE)EECAA 8 EEREaEERE EEEeeEEE<br>0.40.3 oeA)ey Single pulse eeA 64 aeesee 2ed OO<br>0.2 CAAT oy a el<br>0.1 [|SoPe t p (s) 2 aCAFEa eer dIF/dt(A/µs)<br>0.0 Eee i Ul] 0 TPP ep pp eee pp<br>1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


## **Figure 3. Relative variation of thermal impedance junction to case versus pulse durationulse duration** 

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**Characteristics** 

**STTH30W02C** 

**Figure 5. Reverse recovery time versus dI** F **/dt Figure 6. Reverse recovery charges versus (typical values, per diode) dI** F **/dt (typical values, per diode)** 

**==> picture [462 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
QRR(nC)<br>70 trr(ns) 300<br>I F =I F(AV)<br>60 TVIj R =125 °CF=160 V=IF(AV) 250 VT j R=125 =160 V°C<br>50<br>200<br>40<br>150<br>30<br>100<br>20<br>10 50<br>dIF/dt(A/µs) dI F /dt(A/µs)<br>0 0<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 7. Relative variations of dynamic parameters versus junction temperature** 

## **Figure 8. Reverse recovery softness factor versus dI** F **/dt (typical values, per diode)** 

**==> picture [462 x 340] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8 S factor<br>1.61.4 S FACTOR Reference: TVIR F =160 V=I F(AV) j=125 °C 0.80.7 VT I jR=125 °C F =160 V =IF(AV)<br>0.6<br>1.2<br>0.5<br>1.0<br>0.4<br>0.8<br>0.6 IRM 0.3<br>0.4 0.2<br>0.2 Q RR Tj [(][°C][)] 0.1 dIF/dt(A/µs)<br>0.0 0.0<br>25 50 75 100 Tj (°C) 125 0 50 100 150 200 250 300 350 400 450 500<br>Figure 9. Forward recovery time versus dI F /dt  Figure 10. Transient peak forward voltage<br>(typical values, per diode) versus dI F /dt (typical values, per<br>diode)<br>tfr(ns) VFP(V)<br>120 5<br>100 V TI FRj =125 °C F =I =1.1 VF(AV) 4 TIj=125 °CF=IF(AV)<br>80<br>3<br>60<br>2<br>40<br>1<br>20<br>dIF/dt(A/µs) dI F /dt(A/µs)<br>0 0<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


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**STTH30W02C** 

**Characteristics** 

**Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)** 

**==> picture [258 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
C(pF)<br>100<br>F=1 MHz<br>VOSC=30 mVRMS<br>T j =25 °C<br>VR(V)<br>10<br>1 10 100 1000<br>**----- End of picture text -----**<br>


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**STTH30W02C** 

**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.55 N·m (1.0 N·m maximum) 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com._ ECOPACK[®] is an ST trademark. 

## **Table 6. TO-247 dimensions** 

|D<br>L|||L2<br>c<br>A1<br>BACK VIEW<br>Heat-sink plane<br>b1<br>b2<br>b<br>A<br>e<br>1<br>2<br>2<br>3<br>3<br>ÆR<br>ÆP|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|
||||||**Millimeters**|||**Inches**|||
||||||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ**|**Max.**|
|||||A|4.85||5.15|0.191||0.203|
|||||A1|2.20||2.60|0.086||0.102|
|||E|||||||||
|||||b|1.00||1.40|0.039||0.055|
|||||b1|2.00||2.40|0.078||0.094|
|||||b2|3.00||3.40|0.118||0.133|
||S|||c|040||080|0015||0031|
|||||D(1)|.<br>19.85||.<br>20.15|.<br> 0.781||.<br>0.793|
|||L1<br>1||E|15.45||15.75|0.608||0.620|
|||||e|5.30|5.45|5.60|0.209|0.215|0.220|
|||||L|14.20||14.80|0.559||0.582|
|||||L1|3.70||4.30|0.145||0.169|
||||||||||||
|||||L2|18.50 typ.|||0.728 typ.|||
|||||P(2)|3.55||3.65|0.139||0.143|
|||||R|4.50||5.50|0.177||0.217|
|||||S|5.30|5.50|5.70|0.209|0.216|0.224|



1. Dimension D plus gate protrusion does not exceed 20.5 mm 

2. Resin thickness around the mounting hole is not less than 0.9 mm 

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**Ordering information** 

## **3 Ordering information** 

|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|
|---|---|---|---|---|---|
|**Ordering type**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|STTH30W02CW|STTH30W02CW|TO-247|4.46 g|50|Tube|



## **4 Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|05-Oct-2012|1|First issue.|



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