# Fast / Ultrafast Diode, 600 V, 30 A, Single, 3.8 V, 50 ns, 170 A

![Product image](https://novapart.co/image/farnell:3932209/)

**URL**: https://novapart.co/products/STTH30M06SPF/fast-ultrafast-diode-600-v-30-a-single-38-50-ns
**SKU**: STTH30M06SPF
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.9400
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-3PF |
| Diode Configuration | Single |
| Forward Voltage Max | 3.8V |
| Forward Surge Current | 170A |
| Reverse Recovery Time | 50ns |
| Average Forward Current | 30A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3932209/)

**STTH30M06S** 

Datasheet 

## 600 V, 30 A ultrafast high voltage diode 

**==> picture [86 x 125] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>K<br>A<br>A<br>K<br>A<br>TO-3PF<br>**----- End of picture text -----**<br>


## **Features** 

- Ultrafast recovery, soft recovery 

- Low power losses at high switching frequency operations 

- Low leakage current 

- High junction temperature 

- High overcurrent capability 

- ECOPACK2 compliant 

- Insulated package TO-3PF: 

   - Insulated voltage: 2000 VRMS 

## **Applications** 

- PFC 

- Boost diode 

- LLC clamping diode 

## **Description** 

The STTH30M06S is an ultrafast recovery power rectifier especially suited for boost or LLC clamping circuits working at high switching frequencies in heavy duty applications such as air conditioning equipment or telecom power supplies. 

## **Product status** 

Designed with the latest ST’s ultrafast technology, this 600 V 30 A diode in TO-3PF has a robust behavior against electrostatic discharge and high overcurrent capability. 

STTH30M06S 

|**Product summary**|**Product summary**|
|---|---|
|**Symbol**|**Value**|
|**IF(AV)**|30 A|
|**VRRM**|600 V|
|**trr(typ.)**|25 ns|
|**T j(max.)**|175 °C|
|**VF(typ.)**|1.7 V|



**DS13736** - **Rev 2** - **June 2021** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STTH30M06S Characteristics** 

## **1 Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage||600|V|
|IF(AV)|Average forward current|δ = 0.5 square|30|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|170|A|
|Tstg|Storage temperature range||-65 to +175|°C|
|Tj|Maximum operating junction temperature||+175|°C|



**Table 2. Thermal resistance parameter** 

|**Symbol**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case|Typ.|1.6|°C/W|
|||Max.|2.3||



For more information, please refer to the following application note : 

- AN5088 : Rectifiers thermal management, handling and mounting recommendations 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR(1)|Reverse leakage current|Tj= 25 °C|VR= 600 V|-||60|µA|
|||Tj= 125 °C||-|70|800||
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 15 A|-|2.1||V|
|||Tj= 150 °C||-|1.3|||
|||Tj= 25 °C|IF= 30 A|-|2.6|3.8||
|||Tj= 150 °C||-|1.7|2.3||



_1. Pulse test: tp = 5 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: P = 1.1 x IF(AV) + 0.035 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses : 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4058: Calculation of turn-off power losses generated by an ultrafast diode 

**DS13736** - **Rev 2** 

**page 2/10** 

**STTH30M06S Characteristics** 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**|**Parameters**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|trr|Reverse recovery time|Tj= 25 °C|IF= 1 A<br>dIF/dt = -50 A/µs<br>VR= 30 V|-||50|ns|
||||IF= 1 A<br>dIF/dt = -100 A/µs<br>VR= 30 V|-|25|35||
|||Tj= 125 °C|IF= 15 A<br>dIF/dt = -200 A/µs<br>VR= 400 V|-|55|||
||||IF= 30 A<br>dIF/dt = -200 A/µs<br>VR= 400 V|-|70|||
|IRM|Reverse recovery current|Tj= 125 °C|IF= 30 A<br>dIF/dt = -200 A/µs<br>VR= 400 V|-|7||A|
|Qrr|Reverse recovery charge|||-|300||nC|



**DS13736** - **Rev 2** 

**page 3/10** 

**STTH30M06S Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**==> picture [513 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Average forward power dissipation versus Figure 2. Forward voltage drop versus forward current<br>average forward current (square waveform) (typical values)<br>PF(AV)(W) IF(A)<br>110 1000.0<br>100 = 0.05 = 0.1 = 0.2 = 0. =1<br>90<br>100.0<br>80<br>70 T j = 150  ° C T j = 25  ° C<br>60 10.0<br>50<br>40<br>T<br>30 1.0<br>20<br>10 I F(AV) (A) =tp/T tp 0.1 V F (V)<br>0<br>0 8 16 24 32 40 0.0 1.0 2.0 3.0 4.0 5.0<br>**----- End of picture text -----**<br>


**==> picture [513 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Forward voltage drop versus forward current Figure 4. Relative variation of thermal impedance,<br>(maximum values) junction to case versus pulse duration<br>IF(A) Zth(j-c) / Rth(j-c)<br>1000.0 1.0<br>0.9 TO-3PF<br>Single pulse<br>0.8<br>100.0<br>0.7<br>T j = 150  ° C T j = 25 °C 0.6<br>10.0 0.5<br>0.4<br>0.3<br>1.0<br>0.2<br>VF(V) 0.1 tp(s)<br>0.1 0.0<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03<br>Figure 5. Peak reverse recovery current versus dIF/dt Figure 6. Reverse recovery time versus dIF/dt (typical<br>(typical values) values)<br>IRM(A) trr (ns)<br>16 120<br>12 T IVF j  = IR  = 125   = 400 VF(AV) ° C 90 T V IFj = IR = 125 °C  = 400 V F(AV)<br>8 60<br>4 30<br>0 dIF/dt(A/µs) dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**DS13736** - **Rev 2** 

**page 4/10** 

**STTH30M06S Characteristics (curves)** 

**==> picture [513 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Reverse recovery charges versus dIF/dt (typical Figure 8. Reverse recovery softness factor versus dIF/dt<br>values) (typical values)<br>500 QRR(nC) 0.8 SFACTOR<br>400 VTIFj = IR = 125 °C = 400 VF(AV) 0.6 VITF R j = I=125°C=400VF(AV)<br>300<br>0.4<br>200<br>0.2<br>100<br>dI F /dt(A/µs) dIF/dt(A/µs)<br>0 0.0<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**==> picture [513 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. Relative variations of dynamic parameters Figure 10. Junction capacitance versus reverse voltage<br>versus junction temperature applied (typical values)<br>2.0 C(pF)<br>IF=IF(AV) 100<br>1.6 S FACTOR Reference: T VR=400 V j=125 °C V oscF = 1 MHz T= 30 mVj = 25 °C RMS<br>1.2<br>0.8<br>I RM<br>0.4<br>0.0 QRR Tj(°C) 10 VR(V)<br>25 50 75 100 125 1 10 100 1000<br>**----- End of picture text -----**<br>


**==> picture [513 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11. Relative variation of non-repetitive peak Figure 12. Relative variation of non-repetitive peak<br>surge forward current versus pulse duration (sinusoidal surge forward current versus initial junction temperature<br>waveform) (sinusoidal waveform)<br>IFSM(t p) / IFSM(10ms)  1.2 IFSM(Tj) / IFSM(25 °C)<br> 4.0<br> 3.5  1.0<br> 3.0  0.8<br> 2.5  0.6<br> 2.0<br> 0.4<br> 1.5<br> 0.2<br> 1.0 tp(ms)<br> 0.1  1.0  10.0  0.0 Tj(°C)<br> 25  50  75  100  125  150  175<br>**----- End of picture text -----**<br>


**DS13736** - **Rev 2** 

**page 5/10** 

**STTH30M06S Package information** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 TO-3PF package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque: 0.8 to 1.0 N·m 

**Figure 13. TO-3PF package outline** 

**==> picture [285 x 376] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>H<br>C<br>L5<br>L<br>L2<br>L3<br>L6<br>L4<br>N<br>F2(3X) D1<br>D<br>R<br>L7<br>F(3X) E<br>G1<br>G<br>Projection<br>DIA<br>**----- End of picture text -----**<br>


_Note:_ 

_This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ 

**DS13736** - **Rev 2** 

**page 6/10** 

**STTH30M06S TO-3PF package information** 

**Table 5. TO-3PF mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|5.30||5.70|
|C|2.80||3.20|
|D|3.10||3.50|
|D1|1.80||2.20|
|E|0.80||1.10|
|F|0.65||0.95|
|F2|1.80||2.20|
|G|10.30||11.50|
|G1||5.45||
|H|15.30||15.70|
|L|9.80|10.00|10.20|
|L2|22.80||23.20|
|L3|26.30||26.70|
|L4|43.20||44.40|
|L5|4.30||4.70|
|L6|24.30||24.70|
|L7|14.60||15.00|
|N|1.80||2.20|
|R|3.80||4.20|
|Dia|3.40||3.80|



**DS13736** - **Rev 2** 

**page 7/10** 

**STTH30M06S Ordering information** 

**3 Ordering information** 

**Table 6. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STTH30M06SPF|TH30M06SP|TO-3PF|5.6 g|30|Tube|



**DS13736** - **Rev 2** 

**page 8/10** 

**STTH30M06S** 

## **Revision history** 

**Table 7. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|27-May-2021|1|Initial release.|
|03-Jun-2021|2|Updated the name of the package and diode pinout.|



**DS13736** - **Rev 2** 

**page 9/10** 

**STTH30M06S** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2021 STMicroelectronics – All rights reserved 

**DS13736** - **Rev 2** 

**page 10/10** 



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