# Fast / Ultrafast Diode, 200 V, 3 A, Single, 950 mV, 35 ns, 130 A

![Product image](https://novapart.co/image/farnell:9907955/)

**URL**: https://novapart.co/products/STTH302/fast-ultrafast-diode-200-v-3-a-single-950-mv-35-ns
**SKU**: STTH302
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.1640
**Stock**: 100+
**Lead Time**: 206 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):3A; Diode Configuration:Single; Forward Voltage VF Max:950mV; Reverse Recovery Time trr M; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Case Style | DO-201AD |
| Diode Configuration | Single |
| Forward Voltage Max | 950mV |
| Forward Surge Current | 130A |
| Reverse Recovery Time | 35ns |
| Average Forward Current | 3A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9907955/)

## **STTH302** 

® HIGH EFFICIENCY ULTRAFAST DIODE **MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns FEATURES AND BENEFITS** I Very low conduction losses I Negligible switching losses I Low forward and reverse recovery times I High junction temperature **DO-201AD DESCRIPTION STTH302** The STTH302 which is using ST's new 200V mala planar technology, is specially suited for switching mode base drive & transistor circuits. 

|The device is also intended for use as a free||||
|---|---|---|---|
|wheeling diode in power supplies and other power||||
|switching applications.||||
|**ABSOLUTE RATINGS**(limiting values)||||
|**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>VRRM<br>Repetitive peak reverse voltage<br>200<br>V<br>IF (AV)<br>Average forward current<br>TI = 107°C<br>δ= 0.5<br>3<br>A<br>IFSM<br>Surge non repetitive forward current<br>tp= 10ms<br>Sinusoidal<br>130<br>A<br>Tstg<br>Storage temperature range<br>- 65 to + 175<br>°C<br>Tj<br>Maximum operating junction temperature<br>175<br>°C<br>———||||
|**THERMAL PARAMETERS**||||



|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rth (j-a)|Junction-ambient*|25|°C/W|



* On infinite heatsink with 10mm lead length. 

1/5 

November 2001 - Ed: 1A 

**STTH302** 

## **STATIC ELECTRICAL CHARACTERISTICS** 

**==> picture [462 x 107] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter Test Conditions Min. Typ. Max. Unit<br>IR * Reverse leakage current Tj = 25°C VR = VRRM 3 µA<br>Tj = 125°C 4 75<br>VF ** Forward voltage drop Tj = 25°C IF = 3A 0.95 V<br>Tj = 125°C 0.66 0.75<br>**----- End of picture text -----**<br>


Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % 

To evaluate the maximum conduction losses use the following equations: P = 0.60 x IF(AV) + 0.05 IF[2] (RMS) 

## **DYNAMIC ELECTRICAL CHARACTERISTICS** 

**==> picture [461 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter Test conditions Min. Typ. Max. Unit<br>trr Reverse recovery IF = 1A dIF/dt = - 50A/µs Tj = 25°C 35 ns<br>time<br>VR = 30V<br>tfr Forward recovery IF = 3A dIF/dt = 50A/µs Tj = 25°C 70 ns<br>time<br>VFR = 1.1 x VF max<br>VFP Forward recovery Tj = 25°C 1.6 V<br>voltage<br>**----- End of picture text -----**<br>


2/5 

**STTH302** 

**Fig. 1:** Average forward power dissipation versus average forward current. 

**==> picture [220 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
PF(av)(W)<br>3.0<br>δ = 0.1 δ = 0.2 δ = 0.5<br>δ = 0.05<br>2.5<br>2.0 δ = 1<br>1.5<br>1.0<br>T<br>0.5<br>IF(av)(A) δ [=tp/T] tp<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br>


**Fig. 3:** Thermal resistance versus lead length. 

**==> picture [221 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
Rth(°C/W)<br>90<br>80 Rth(j-a)<br>70<br>60<br>50<br>40<br>30 Rth(j-l)<br>20<br>10 Lleads(mm)<br>0<br>5 10 15 20 25<br>**----- End of picture text -----**<br>


**Fig. 5:** Forward voltage drop versus forward current. 

**==> picture [221 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
IFM(A)<br>100.0<br>Tj=125°C<br>(Maximum values)<br>10.0<br>Tj=125°C<br>(Typical values)<br>Tj=25°C<br>(Maximum values)<br>1.0<br>VFM(V)<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>**----- End of picture text -----**<br>


**Fig. 2:** Average forward current versus ambient temperature (δ=0.5). 

**==> picture [220 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(av)(A)<br>3.5<br>Rth(j-a)=Rth(j-l)<br>3.0<br>2.5<br>2.0<br>1.5 Rth(j-a)=75°C/W<br>1.0<br>0.5<br>Tamb(°C)<br>0.0<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


**Fig. 4:** Relative variation of thermal impedance junction ambient versus pulse duration (printed circuit board epoxy FR4, LIeads = 10mm). 

**==> picture [220 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth(j-a)/Rth(j-a)<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>δ = 0.5<br>0.5<br>0.4<br>0.3<br>δ = 0.2 T<br>0.2<br>δ = 0.1<br>0.1 Single pulse tp(s) δ [=tp/T] tp<br>0.0<br>1.E-01 1.E+00 1.E+01 1.E+02 1.E+03<br>**----- End of picture text -----**<br>


**Fig. 6:** Junction capacitance versus reverse voltage applied (typical values). 

**==> picture [220 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
C(pF)<br>100<br>F=1MHz<br>Vosc=30mV<br>Tj=25°C<br>VR(V)<br>10<br>1 10 100 1000<br>**----- End of picture text -----**<br>


3/5 

**STTH302** 

**Fig. 7:** Reverse recovery time versus dIF/dt (90% confidence). 

**Fig. 8:** Peak reverse recovery current versus dIF/dt (90% confidence). 

**==> picture [461 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
trr(ns) IRM(A)<br>100 6<br>IF=3A IF=3A<br>90 VR=100V VR=100V<br>Tj=125°C 5 Tj=125°C<br>80<br>70<br>4<br>60 Tj=125°C Tj=125°C<br>50 3<br>40<br>Tj=25°C<br>Tj=25°C 2<br>30<br>20<br>1<br>10 dIF/dt(A/µs) dIF/dt(A/µs)<br>0 0<br>1 10 100 1000 1 10 100 1000<br>**----- End of picture text -----**<br>


**Fig. 9:** Relative variations of dynamic parameters versus junction temperature. 

**IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C]** 

**==> picture [221 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0<br>IF=3A<br>4.5 dIF/dt=200A/µsVR=100V<br>4.0 Qrr<br>3.5<br>3.0<br>2.5<br>IRM<br>2.0<br>1.5 trr<br>Tj(°C)<br>1.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


4/5 

**STTH302** 

## **PACKAGE MECHANICAL DATA** 

DO-201AD 

**==> picture [461 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
B A B ØC<br>note 1 E E note 1<br>ØD ØD<br>note 2<br>**----- End of picture text -----**<br>


**==> picture [462 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>REF. Millimeters Inches NOTES<br>Min. Max. Min. Max.<br>A 9.50 0.374 1 - The lead diameter ∅ D is not controlled over zone E<br>B 25.40 1.000<br>∅ C 5.30 0.209 2 - The minimum axial length within which the device may be<br>∅ D 1.30 0.051 placed with its leads bent at right angles is 0.59"(15 mm)<br>E 1.25 0.049<br>**----- End of picture text -----**<br>


**==> picture [461 x 56] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ordering code Marking Package Weight Base qty Delivery mode<br>STTH302 STTH302 DO-201AD 1.16 g 600 Ammopack<br>STTH302RL STTH302 DO-201AD 1.16 g 1900 Tape and reel<br>**----- End of picture text -----**<br>


> I White band indicates cathode 

- I Epoxy meets UL94,V0 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

- © 2001 STMicroelectronics - Printed in Italy - All rights reserved. 

## STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

5/5 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stth302/diode-ultrafast-3a-200v/dp/9907955)
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