# Fast / Ultrafast Diode, 200 V, 20 A, Dual Common Cathode, 1.4 V, 25 ns, 80 A

![Product image](https://novapart.co/image/farnell:2325963/)

**URL**: https://novapart.co/products/STTH20W02CW/fast-ultrafast-diode-200-v-20-a-dual-common
**SKU**: STTH20W02CW
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €2.0700
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3 Pin |
| Product Range | STTH2 |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.4V |
| Forward Surge Current | 80A |
| Reverse Recovery Time | 25ns |
| Average Forward Current | 20A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2325963/)

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## **STTH20W02C** 

## Turbo 2 ultrafast high voltage rectifier 

**Datasheet** − **production data** 

## **Features** 

- Ultrafast switching 

- Low reverse recovery current 

- Low thermal resistance 

- Reduces switching losses 

- ECOPACK[®] 2 compliant component 

## **Description** 

The STTH20W02C uses ST Turbo 2 200 V technology. It is especially suited to be used for DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine. Housed in ST’s TO-247, this device offers high power integration for all welding machines and industrial applications. 

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A1<br>K<br>A2<br>A2<br>K<br>A1<br>**----- End of picture text -----**<br>


**TO-247 STTH20W02CW** 

**Table 1.** 

## **Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|2 x 10 A|
|VRRM|200 V|
|trr(typ)|20 ns|
|Tj|175 °C|
|VF(typ)|0.89 V|



1/8 

May 2012 

Doc ID 023126 Rev 1 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STTH20W02C** 

## **1 Characteristics** 

**Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|||200|V|
|IF(RMS)|RMS forward current|||20|A|
|IF(AV)|Average forward current,δ= 0.5|Tc= 120 °C|Per diode|10|A|
|||Tc= 110 °C|Per device|20||
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal||80|A|
|Tstg|Storage temperature range|||-65 to + 175|° C|
|Tj|Maximum operating junction temperature|||+ 175|° C|



**Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|Rth(j-c)|Junction to case|Per diode|4|°C / W|
|||Total|2.5|°C / W|
|Rth(c)|Coupling||1|°C / W|



When diodes 1 and 2 are used simultaneously: 

Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 

## **Table 4. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|||5|µA|
|||Tj= 125° C|||3|30||
|VF (2)|Forward voltage drop|Tj= 25° C|IF= 10 A|||1.20|V|
|||Tj= 150 °C|||0.89|1.05||
|||Tj= 25° C|IF= 20 A|||1.40||
|||Tj= 150° C|||1.10|1.30||



1. Pulse test: tp = 5 ms, δ < 2% 

2. Pulse test: tp = 380 µs, δ < 2% 

To evaluate the conduction losses use the following equation: 

P = 0.8 x IF(AV) + 0.025 IF[2] (RMS) 

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**STTH20W02C** 

**Characteristics** 

**Table 5. Dynamic electrical characteristics** 

|**Symbol**<br>**Parameter**|**Parameter**<br>**Test conditions**|**Parameter**<br>**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|IRM<br>Reverse recovery current|Reverse recovery current<br>Tj= 125 °C<br>Reverse recovery charge<br>Softness factor|IF= 10 A, VR= 160 V<br>dIF/dt = -200 A/µs||7|9|A|
|QRR<br>Reverse recovery charge||||150||nC|
|Sfactor<br>Softness factor||||0.4|||
|trr<br>Reverse recovery time|Reverse recovery time<br>Tj= 25 °C|IF= 1 A, VR= 30 V<br>dIF/dt = -100 A/µs||20|25|ns|
|tfr<br>Forward recovery time|Forward recovery time<br>Tj= 25 °C<br>Forward recovery voltage|IF= 10 A, VFR= 1 V<br>dIF/dt = 100 A/µs|||110|ns|
|VFP<br>Forward recovery voltage||||1.6|2.4|V|



**Figure 1. Average forward power dissipation Figure 2. Forward voltage drop versus versus average forward current forward current (per diode) (per diode)** 

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**----- Start of picture text -----**<br>
PF(AV)(W) IFM(A)<br>16 100.0<br>14 a δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 [| SS Tj [= 150°C] SS SS  SS<br>i | / | (Maximum values) a<br>12 es A Latta| | | ft td<br>10 10.0 (Typical values)Tj=150 °C Tj = 25 °C<br>(Maximum values)<br>8 ee a a Ae ee AyA<br>6<br>1.0<br>SAAS LER | j e t yy | | | | | td<br>4<br>T<br>2<br>δ = tp/T tp IF(AV)(A) VFM(V)<br>0 A oe e e 0.1 | ta AT | ct dT hE rT dT<br>0 2 4 6 8 10 12 14 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>Figure 3. Relative variation of thermal  Figure 4. Peak reverse recovery current<br>impedance junction to case versus  versus dI F /dt (typical values, per<br>pulse duration diode)<br>**----- End of picture text -----**<br>


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Zth(j-c)/Rth(j-c) IRM(A)<br>1.0 16<br>IF = I F(AV)<br>0.9 TE Eo 14 VR = 160 V F-E-E--E--EE-E--E<br>0.8 LTCnTTT oooCTooo Tj = 125°C es a Lo ES<br>0.7 aCea a ee 1210 OeDEPPaDELLLLLOO<br>0.6 LT TTT ae a<br>Cn ee ee =<br>0.5 a 2 8 A edee<br>a ee<br>0.40.3 CrCna a 0ZA orooo oooot 6 ceceva<br>0.2 ieCa Single pulse Ceeoo ee oo 42 (||)a4 a PreteOOtT eet tt<br>0.1 tp(s) dIF/dt(A/µs)<br>0.0 eCa 0 (7,Fet| | | ttt Pt te et ty e<br>1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


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**Characteristics** 

**STTH20W02C** 

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Figure 5. Reverse recovery time versus dI F /dt  Figure 6. Reverse recovery charges versus<br>(typical values, per diode) dI F /dt (typical values, per diode)<br>trr(ns) QRR(nC)<br>70 300<br>60 VTIRFj = 125°C= 160 V= I F(AV) 250 VTIRFj = 125°C= 160 V= I F(AV)<br>50<br>200<br>40<br>150<br>30<br>100<br>20<br>50<br>10<br>dIF/dt(A/µs)<br>dIF/dt(A/µs)<br>0 0<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


## **Figure 7. Relative variations of dynamic parameters versus junction temperature** 

**Figure 8. Reverse recovery softness factor versus dI** F **/dt (typical values, per diode)** 

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1.4 S factor<br>IF = I F(AV) 0.8<br>1.2 SFACTOR reference:TVRj [= 125°C] = 160 V 0.7 VIRF = 160 V= I F(AV)<br>Tj = 125°C<br>1.0 0.6<br>0.8 0.5<br>0.6 IRM 0.4<br>0.3<br>0.4<br>0.2<br>0.2 QRR<br>0.1<br>Tj (°C) dIF/dt(A/µs)<br>0.0 0.0<br>25 50 75 100 125 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


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**STTH20W02C** 

**Characteristics** 

**Figure 9. Forward recovery time versus dI** F **/dt Figure 10. Transient peak forward voltage (typical values, per diode) versus dI** F **/dt (typical values, per diode)** 

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tfr(ns) VFP(V)<br>100 5<br>80 IVTFjFR= I= 125 °C= 1 VF(AV) 4 ITFj [= 125 °C] = I F(AV)<br>60 3<br>40 2<br>20 1<br>dIF/dt(A/µs) dIF/dt(A/µs)<br>0 0<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


## **Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)** 

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C(pF)<br>100<br>F = 1 MHz<br>VOSC = 30 mVRMS<br>Tj = 25 °C<br>VR(V)<br>10<br>1 10 100 1000<br>**----- End of picture text -----**<br>


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**STTH20W02C** 

**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.55 N·m (1.0 N·m maximum) 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

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Table 6. TO-247 dimensions<br>Dimensions<br>Ref. Millimeters Inches<br>Min. Max. Min. Max.<br>A 4.85 5.15 0.191 0.203<br>D 2.20 2.60 0.086 0.102<br>V<br>E 0.40 0.80 0.015 0.031<br>F 1.00 1.40 0.039 0.055<br>V Dia<br>F1 3.00 typ. 0.118 typ.<br>A F2 2.00 typ. 0.078 typ.<br>H<br>F3 2.00 2.40 0.078 0.094<br>F4 3.00 3.40 0.118 0.133<br>L5<br>G 10.90 typ. 0.429 typ.<br>L<br>H 15.45 15.75 0.608 0.620<br>L2<br>L4 L 19.85 20.15 0.781 0.793<br>F1 F2 L1<br>L1 3.70 4.30 0.145 0.169<br>F3<br>V2 F4 L3 D L2 18.50 typ. 0.728 typ.<br>F(x3) L3 14.20 14.80 0.559 0.582<br>M E<br>L4 34.60 typ. 1.362 typ.<br>G<br>L5 5.50 typ. 0.216 typ.<br>M 2.00 3.00 0.078 0.118<br>V 5° typ. 5° typ.<br>V2 60° typ. 60° typ.<br>Dia. 3.55 3.65 0.139 0.143<br>**----- End of picture text -----**<br>


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**Ordering information** 

## **3 Ordering information** 

|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|
|---|---|---|---|---|---|
|**Ordering type**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|STTH20W02CW|STTH20W02CW|TO-247|4.46 g|50|Tube|



## **4 Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|18-May-2012|1|First issue.|



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## Links

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- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stth20w02cw/diode-ultrafast-2x10a-200v-to/dp/2325963)
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