# Fast / Ultrafast Diode, 300 V, 20 A, Dual Common Cathode, 1.25 V, 25 ns, 110 A

![Product image](https://novapart.co/image/farnell:4860847RL/)

**URL**: https://novapart.co/products/STTH2003CGY-TR/fast-ultrafast-diode-300-v-20-a-dual-common
**SKU**: STTH2003CGY-TR
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.9570
**Stock**: 50+
**Lead Time**: 319 days (indicative)

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4860847RL/)

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## **STTH2003C-Y** 

## Automotive high efficiency ultrafast diode 

**Datasheet**  **production data** 

## **Features** 

- High junction temperature 

- Combines highest recovery and reverse voltage performance 

- Ultrafast, soft and noise-free recovery 

- AEC-Q101 qualified 

## **Description** 

This dual center tap rectifier is suited for switch mode power supplies and high frequency DC to DC converters. 

Packaged in D[2] PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications. 

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A1<br>K<br>A2<br>K<br>A2<br>A1<br>**----- End of picture text -----**<br>


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D [2] PAK<br>STTH2003CGY-TR<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|IF(AV)|2 x 10 A|
|---|---|
|VRRM|300 V|
|Tj(max)|175 °C|
|VF(max)|1 V|
|trr(max)|40 ns|



October 2012 

1/7 

Doc ID 022396 Rev 1 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STTH2003C-Y** 

## **1 Characteristics** 

## **Table 2. Absolute ratings (limiting values, per diode)** 

|**Table 2.**|**Absolute ratings (limiting values,per diode)**|**Absolute ratings (limiting values,per diode)**|**Absolute ratings (limiting values,per diode)**|||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|||**Value**|**Unit**|
|VRRM|Repetitive peak reverse voltage|||300|V|
|IF(RMS)|Forward current rms|||48|A|
|IF(AV)|Average forward current,= 0.5|Tc= 140 °C|Per diode<br>Per device|10<br>20|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal (Tj= 25 °C)||110|A|
|Tstg|Storage temperature range|||-65 to + 175|°C|
|Tj|Operating junction temperature range|||-40 to + 175|°C|



## **Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value (Max.)**|**Unit**|
|Rth(j-c)|Junction to case|Per diode|2.5|°C/W|
|||Total|1.3||



## **Table 4. Static electrical characteristics (per diode)** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR(1)|Reverse leakage current|Tj= 25 °C|VR= 300 V|||20|µA|
|||Tj= 125 °C|||30|300||
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 10 A|||1.25|V|
|||Tj= 125 °C|||0.85|1||



1. Pulse test: tp = 5 ms,  < 2% 

2. Pulse test: tp = 380 µs,  < 2% 

To evaluate the conduction losses use the following equation: 

P = 0.75 x IF(AV) + 0.025 IF[2] (RMS)) 

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**Characteristics** 

**Table 5. Recovery characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|trr|Reverse recovery time|Tj= 25 °C|IF= 0.5 A, Irr= 0.25 A<br>IR= 1 A<br>IF= 1 A, VR= 30 V<br>dIF/dt = -50 A/µs|||25|ns|
|||||||40||
|tfr|Forward recovery time|Tj= 25 °C|IF= 10 A<br>dIF/dt = 100 A/µs<br>VFR= 1.1 x VFmax|||230|ns|
|VFP|Peak forward voltage|Tj= 25 °C|IF= 10 A,<br>dIF/dt = 100 A/µs|||3.5|V|
|IRM|Reverse recovery current|Tj= 125 °C|IF= 10 A, VCC= 200 V<br>dIF/dt = 200 A/µs|||8|A|
|S factor|Softness factor||||0.3||-|



**Figure 1. Conduction losses versus average Figure 2. Forward voltage drop versus forward current (per diode) forward current (maximum values, per diode)** 

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P1(W) IFM(A)<br>14 200<br>δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5<br>12 100 T =125°Cj<br>10<br>δ = 1 T =25°Cj<br>8<br>6 10 T =75j ° C<br>4<br>T<br>2<br>IF(AV)(A) δ [=tp/T] tp VFM(V)<br>0 1<br>0 2 4 6 8 10 12 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00<br>**----- End of picture text -----**<br>


**Figure 3. Relative variation of thermal Figure 4. Peak reverse recovery current impedance junction to case versus versus dIF/dt (90% confidence, per pulse duration diode)** 

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Zth(j-c)/Rth(j-c) IRM(A)<br>1.0 16<br>0.8 14 VT =125°CjR=200V IF=2 x IF(AV)<br>12<br>IF=IF(AV)<br>0.6 10 I F =0.5 x I F(AV)<br>8<br>0.4 6<br>4<br>0.2<br>Single pulse 2<br>tp(s) dI F /dt(A/µs)<br>0.0 0<br>1E-3 1E-2 1E-1 1E+0 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


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**Characteristics** 

**STTH2003C-Y** 

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Figure 5. Reverse recovery time versus dIF/dt  Figure 6. Softness factor (tb/ta) versus dIF/dt<br>(90% confidence, per diode) (typical values, per diode)<br>trr(ns) S factor<br>100 0.60<br>VR=200V V R =200V<br>T =125°Cj 0.50 T =125°Cj<br>80<br>IF=IF(AV)<br>0.40<br>60<br>IF=2 x IF(AV)<br>IF=0.5 x IF(AV) 0.30<br>40<br>0.20<br>20<br>0.10<br>dI F /dt(A/µs) dI F /dt(A/µs)<br>0 0.00<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 7. Relative variation of dynamic Figure 8. Forward recovery time versus dIF/dt parameters versus junction (90% confidence, per diode) temperature (reference: Tj = 125 °C)** 

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2.4 tfr(ns)<br>2.2 500<br>2.0 V FR =1.1 x V IF=IF(AV)F max.<br>1.8 S factor 400 T =125°Cj<br>1.6<br>1.4<br>300<br>1.2<br>1.0<br>200<br>0.8 IRM<br>0.6<br>0.4 100<br>0.2 T ( j °C) dIF/dt(A/µs)<br>0.0 0<br>25 50 75 100 125 0 50 100 150 200 250 300 350 400 450 500<br>Figure 9. Thermal resistance, junction to  Figure 10. Average forward current versus<br>ambient, versus copper surface  ambient temperature<br>under tab (   = 0.5  per diode)<br>80 Rth(j-a)(°C/W) 12 IF(AV)(A)<br>70 Printed circuit board FR4, 1110 R th(j-a) = R th(j-c)<br>copper thickness: 35 µm<br>60 9<br>8<br>50<br>7<br>40 6<br>5<br>30<br>4<br>20 3<br>2<br>10<br>SCu(cm²) 1 Tamb( ° C)<br>0 0<br>0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


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**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com._ ECOPACK[®] is an ST trademark. 

**Table 6. D[2] PAK dimensions** 

|**L**||||**ESS THAN 2mm**<br>**A**<br>**D**<br>**R**<br>**V2**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|
|||||||**Millimeters**||**Inches**||
|||||||**Min.**|**Max.**|**Min.**|**Max.**|
||||||A|4.40|4.60|0.173|0.181|
||**L2**|||||||||
||||||A1|2.49|2.69|0.098|0.106|
|||||||||||
||||||A2<br>|0.03<br>|0.23<br>|0.001<br>|0.009<br>|
|||||||||||
||**L3**||||B|0.70|0.93|0.027|0.037|
||||||B2|1.14|1.70|0.045|0.067|
||||||C|0.45|0.60|0.017|0.024|
|||||||||||
||||||C2|1.23|1.36|0.048|0.054|
|||||||||||
||||||D|8.95|9.35|0.352|0.368|
||||||E|10.00|10.40|0.393|0.409|
||||||G|4.88|5.28|0.192|0.208|
||||||L|15.00|15.85|0.590|0.624|
||||||L2|1.27|1.40|0.050|0.055|
||||||L3|1.40|1.75|0.055|0.069|
|||||||||||
||||||M|2.40|3.20|0.094|0.126|
||||||R|0.40 typ.||0.016 typ.||
||||||V2|0°|8°|0°|8°|



## **Figure 11. Footprint (dimensions in mm)** 

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16.90<br>10.30 5.08<br>1.30<br>3.70<br>8.90<br>**----- End of picture text -----**<br>


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**Ordering information** 

**STTH2003C-Y** 

## **3 Ordering information** 

**Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|STTH2003CGY-TR|STTH2003CGY|D2PAK|1.48 g|1000|Tape and reel|



## **4** 

## **Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-Oct-2012|1|Initial release.|



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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stth2003cgy-tr/fast-recovery-diode-300v-20a-d2pak/dp/4860847RL)
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