# Fast / Ultrafast Diode, 600 V, 15 A, Dual Series, 3.6 V, 35 ns, 130 A

![Product image](https://novapart.co/image/farnell:2806746/)

**URL**: https://novapart.co/products/STTH1506TPI/fast-ultrafast-diode-600-v-15-a-dual-series-36-35
**SKU**: STTH1506TPI
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €1.8800
**Stock**: 50+
**Lead Time**: 127 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):15A; Diode Configuration:Dual Series; Forward Voltage VF Max:3.6V; Reverse Recovery Time trr Max:35ns; Forward Surge Cu

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TOP-3I |
| Diode Configuration | Dual Series |
| Forward Voltage Max | 3.6V |
| Forward Surge Current | 130A |
| Reverse Recovery Time | 35ns |
| Average Forward Current | 15A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2806746/)

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## **STTH1506TPI** 

## Tandem 600V H erfast Rectifer yp 

## **MAJOR PRODUCTS CHARACTERISTICS** 

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IF(AV) 15 A<br>VRRM 600 V (in series)<br>Tj (max) 150 °C<br>VF (max) 2.6 V<br>I RM  (typ.) 4.8 A<br>**----- End of picture text -----**<br>


## **FEATURES AND BENEFITS** 

- I Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. 

- I Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks. 

- I Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. 

- I Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink. 

- I Matched diodes for typical PFC application without need for voltage balance network. 

- I C = 7pF 

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1 2 3<br>1<br>2<br>3<br>TOP3I<br>(insulated)<br>**----- End of picture text -----**<br>


## **DESCRIPTION** 

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. 

## **ABSOLUTE RATINGS** (limiting values for both diodes in series) 

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Symbol Parameter Value Unit<br>VRRM Repetitive peak reverse voltage 600 V<br>IF(RMS) RMS forward current 26 A<br>IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 130 A<br>Tstg Storage temperature range -65 +150 °C<br>Tj Maximum operating junction temperature + 150 °C<br>**----- End of picture text -----**<br>


TM: TURBOSWITCH is a trademark of STMicroelectronics 

May 2002 - Ed: 1A 

1/5 

**STTH1506TPI** 

## **THERMAL AND POWER DATA** 

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Symbol Parameter Test conditions Value Unit<br>Rth (j-c) Junction to case Per diode 2.9 °C/W<br>Rth (c) Coupling 0.3<br>Rth (j-c) Junction to case Total 1.6<br>P1 Conduction power dissipation for IF(AV) = 15 A δ = 0.5 50 W<br>both diodes Tc = 70°C<br>**----- End of picture text -----**<br>


## **STATIC ELECTRICAL CHARACTERISTICS** (for both diodes) 

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Symbol Parameter Tests Conditions Min. Typ. Max. Unit<br>IR* Reverse leakage cur- VR = VRRM Tj = 25°C 20 µA<br>rent<br>Tj = 125°C 30 200<br>VF** Forward voltage drop IF = 15 A Tj = 25°C 3.6 V<br>Tj = 125°C 2.1 2.6<br>**----- End of picture text -----**<br>


Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% 

To evaluate the maximum conduction losses use the following equation: P = 1.8 x IF(AV) + 0.053 x IF[2] (RMS) 

## **RECOVERY CHARACTERISTICS** 

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Symbol Parameter Tests Conditions Min. Typ. Max. Unit<br>trr Reverse recovery IF = 0.5 A Irr = 0.25A Tj = 25°C 16 ns<br>time IR = 1 A<br>IF = 1 A dIF/dt = - 50A/µs 35<br>VR = 30 V<br>IRM Reverse recovery VR = 400 V IF = 15 A Tj = 125°C 4.8 6.0 A<br>Sfactor current dIF/dt = -200 A/µs 0.4 -<br>**----- End of picture text -----**<br>


## **TURN-ON SWITCHING CHARACTERISTICS** 

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Symbol Parameter Tests Conditions Min. Typ. Max. Unit<br>tfr Forward IF = 15 A dIF/dt = 100A/µs, Tj = 25°C 200 ns<br>recovery time VFR = 1.1 x VFmax<br>VFP Forward IF = 15 A dIF/dt = 100 A/µs Tj = 25°C 6 V<br>recovery voltage<br>**----- End of picture text -----**<br>


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## **Fig. 1:** Conduction losses versus average current. 

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P(W)<br>55<br>50 δ = 0.1 δ = 0.2 δ = 0.5<br>45<br>δ = 0.05<br>40 δ = 1<br>35<br>30<br>25<br>20<br>15 T<br>10<br>5 IF(AV)(A) δ [=tp/T] tp<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>Fig. 3: Relative variation of thermal impedance<br>junction to case versus pulse duration.<br>Zth(j-c)/Rth(j-c)<br>1.0<br>0.9<br>0.8<br>0.7<br>δ = 0.5<br>0.6<br>0.5<br>0.4 δ = 0.2<br>0.3 δ = 0.1<br>T<br>0.2<br>Single pulse<br>0.1 tp(s) δ [=tp/T] tp<br>0.0<br>1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**Fig. 5:** Reverse recovery time versus dIF/dt (90% confidence). 

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trr(ns)<br>100<br>VR=400V<br>90 T=125°Cj<br>80<br>70<br>60<br>50 IF=2 x IF(AV)<br>40<br>30 IF=IF(AV)<br>IF=0.5 x IF(AV)<br>20<br>10<br>dIF/dt(A/µs)<br>0<br>0 200 400 600 800 1000<br>**----- End of picture text -----**<br>


**Fig. 2:** Forward voltage drop versus forward current. 

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IFM(A)<br>130<br>120<br>110<br>100<br>90 (Maximum values)(Maximum values)TT=125°Cjj=125°C<br>80<br>70<br>60 T=125°Cj<br>(Typical values)<br>50<br>40<br>30 T=25°Cj<br>(Maximum values)<br>20<br>10 VFM(V)<br>0<br>0 1 2 3 4 5 6 7 8<br>**----- End of picture text -----**<br>


**Fig. 4:** Peak reverse recovery current versus dIF/dt (90% confidence). 

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IRM(A)<br>22<br>20 T=125°CVjR=400V IF=2 x IF(AV)<br>18<br>IF=IF(AV)<br>16<br>14 IF=0.5 x IF(AV)<br>12<br>IF=0.25 x IF(AV)<br>10<br>8<br>6<br>4<br>2 dIF/dt(A/µs)<br>0<br>0 200 400 600 800 1000<br>**----- End of picture text -----**<br>


**Fig. 6:** Reverse recovery charges versus dIF/dt (90% confidence). 

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Qrr(nC)<br>350<br>VR=400V<br>T=125°Cj<br>300<br>250 IF=2 x IF(AV)<br>200 IF=IF(AV)<br>150 IF=0.5 x IF(AV)<br>100<br>50<br>dIF/dt(A/µs)<br>0<br>0 200 400 600 800 1000<br>**----- End of picture text -----**<br>


3/5 

## **STTH1506TPI** 

**Fig. 7:** Softness factor versus dIF/dt (typical values). 

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S factor<br>0.80<br>IF=IF(AV)<br>VR=400V<br>0.70 T=125°Cj<br>0.60<br>0.50<br>0.40<br>0.30<br>dIF/dt(A/µs)<br>0.20<br>0 200 400 600 800 1000<br>**----- End of picture text -----**<br>


**Fig. 9:** Transient peak forward voltage versus dIF/dt (90% confidence). 

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VFP(V)<br>16<br>IF=IF(AV)<br>T=125°Cj<br>14<br>12<br>10<br>8<br>6<br>4<br>2 dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Fig. 8:** Relative variations of dynamic parameters versus junction temperature. 

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2.50<br>IF=IF(AV)<br>2.25 VR=400V<br>Reference: T=125°Cj<br>2.00<br>1.75 S factor<br>1.50<br>1.25<br>1.00<br>0.75 IRM<br>0.50<br>0.25 Tj(°C)<br>0.00<br>25 50 75 100 125<br>**----- End of picture text -----**<br>


**Fig. 10:** Forward recovery time versus dIF/dt (90% confidence). 

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tfr(ns)<br>400<br>IF=IF(AV)<br>350 VFR=1.1 x VF max.<br>T=125°Cj<br>300<br>250<br>200<br>150<br>100<br>50<br>dIF/dt(A/µs)<br>0<br>0 100 200 300 400 500<br>**----- End of picture text -----**<br>


**Fig. 11:** Junction capacitance versus reverse voltage applied (typical values). 

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C(pF)<br>1000<br>F=1MHz<br>VOSC=30mV<br>T=25°Cj<br>100<br>VR(V)<br>10<br>1 10 100 1000<br>**----- End of picture text -----**<br>


4/5 

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## **PACKAGE MECHANICAL DATA** TOP3I 

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DIMENSIONS<br>REF. Millimeters Inches<br>Min. Typ. Max. Min. Typ. Max.<br>A 4.4 4.6 0.173 0.181<br>B 1.45 1.55 0.057 0.061<br>C 14.35 15.60 0.565 0.614<br>D 0.5 0.7 0.020 0.028<br>E 2.7 2.9 0.106 0.114<br>F 15.8 16.5 0.622 0.650<br>G 20.4 21.1 0.815 0.831<br>H 15.1 15.5 0.594 0.610<br>J 5.4 5.65 0.213 0.222<br>K 3.4 3.65 0.134 0.144<br>L 4.08 4.17 0.161 0.164<br>P 1.20 1.40 0.047 0.055<br>R 4.60 0.181<br>**----- End of picture text -----**<br>


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Ordering code Marking Package Weight Base qty Delivery mode<br>STTH1506TPI STTH1506TPI TOP3I 4.46 g. 30 Tube<br>**----- End of picture text -----**<br>


> I Epoxy meets UL94,V0 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

## The ST logo is a registered trademark of STMicroelectronics 

© 2002 STMicroelectronics - Printed in Italy - All rights reserved. 

## STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

5/5 



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