# Standard Recovery Diode, 1.2 kV, 12 A, Single, 590 mV, 50 ns, 100 A

![Product image](https://novapart.co/image/farnell:1295235/)

**URL**: https://novapart.co/products/STTH1212D/standard-recovery-diode-12-kv-a-single-590-mv-50
**SKU**: STTH1212D
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes
**Price**: €0.3980
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):12A; Diode Configuration:Single; Forward Voltage VF Max:590mV; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifs

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | STTH1 |
| Qualification | - |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 590mV |
| Forward Surge Current | 100A |
| Reverse Recovery Time | 50ns |
| Average Forward Current | 12A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1295235/)

**STTH1212** 

**==> picture [61 x 39] intentionally omitted <==**

## Ultrafast recover - 1200 V diode y 

## **Main product characteristics** 

|IF(AV)|12 A|
|---|---|
|VRRM|1200 V|
|Tj|175° C|
|VF(typ)|1.25 V|
|trr(typ)|50 ns|



## **Features and benefits** 

- Ultrafast, soft recovery 

- Very low conduction and switching losses 

- High frequency and/or high pulsed current operation 

- High reverse voltage capability 

- High junction temperature 

## **Description** 

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. 

Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. 

**==> picture [68 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
A K<br>A<br>K<br>TO-220AC<br>STTH1212D<br>**----- End of picture text -----**<br>


**==> picture [73 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
K<br>A<br>NC<br>D [2] PAK<br>STTH1212G<br>**----- End of picture text -----**<br>


## **Order codes** 

|**Part Number**|**Marking**|
|---|---|
|STTH1212D|STTH1212D|
|STTH1212G|STTH1212G|
|STTH1212G-TR|STTH1212G|



The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. 

1/9 

March 2006 

Rev 1 

9 

_www.st.com_ 

**Characteristics** 

**STTH1212** 

## **1 Characteristics** 

## **Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|||1200|V|
|IF(RMS)|RMS forward current|||30|A|
|IF(AV)|Average forward current,δ= 0.5||Tc= 130° C|12|A|
|IFRM|Repetitive peak forward current|tp= 5 µs, F = 5 kHz square||160|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms Sinusoidal||100|A|
|Tstg|Storage temperature range|||-65 to + 175|°C|
|Tj|Maximum operating junction temperature|||175|°C|



## **Table 2. Thermal parameter** 

|**Symbol**|**Symbol**|**Parameter**|**Parameter**|**Value**|**Value**||**Unit**|**Unit**|**Unit**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|
|Rth(j-c)||Junction to case||1.6|||°C/W||||
|**Table 3.**<br>**Static electrical characteristics**|||||||||||
|**Symbol**|**Parameter**||**Test conditions**|||**Min.**||**Typ**|**Max.**|**Unit**|
|IR<br>(1)|Reverse leakage current||Tj= 25° C||VR= VRRM||||10|µA|
||||Tj= 125° C|||||7|70||
|VF<br>(2)|Forward voltage drop||Tj= 25° C||IF= 12 A||||2.2|V|
||||Tj= 125° C|||||1.30|2.0||
||||Tj= 150° C|||||1.25|1.9||



1. Pulse test: tp = 5 ms, δ < 2 % 

2. Pulse test: tp = 380 µs, δ < 2 % 

To evaluate the conduction losses use the following equation: P = 1.5 x IF(AV) + 0.033 IF2(RMS) 

2/9 

**STTH1212** 

**Characteristics** 

**Table 4. Dynamic characteristics** 

|**Table 4.**<br>**Dynamic**|**characteristics**|||||
|---|---|---|---|---|---|
|**Symbol**<br>**Pa**|**rameter**<br>**Test conditions**|**Min.**|**Typ**<br>|**Max.**|**Unit**|
|trr<br>Reverse recov|ery time<br>IF= 1 A, dIF/dt = -50 A/µs,<br>VR= 30 V, Tj= 25° C<br>IF= 1 A, dIF/dt = -100 A/µs,<br>VR= 30 V, Tj= 25° C|||100|ns|
||||50|70||
|IRM<br>Reverse recov|ery current<br>IF= 12 A, dIF/dt = -200 A/µs,<br>VR= 600 V, Tj= 125° C||16|24|A|
|S<br>Softness facto|r<br>IF= 12 A, dIF/dt = -200 A/µs,<br>VR= 600 V, Tj= 125° C||2|||
|tfr<br>Forward recov|ery time<br>IF= 12 A      dIF/dt = 50 A/µs<br>VFR= 1.5 x VFmax, Tj= 25° C|||400|ns|
|VFP<br>Forward recov|ery voltage<br>IF= 12 A, dIF/dt = 50 A/µs,<br>Tj= 25° C||6||V|



**Figure 1. Conduction losses versus average current** 

**Figure 2. Forward voltage drop versus forward current** 

**==> picture [462 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
P(W) IFM(A)<br>30 100<br>δ = 0.1 δ = 0.2 δ = 0.5<br>25 δ = 0.05 9080 (typical values)T =150°Cj<br>δ = 1<br>70<br>20<br>60<br>15 50<br>40 T =25°Cj<br>(maximum values)<br>10 T 30 (maximum values)T =150°Cj<br>20<br>5<br>IF(AV)(A) δ [=tp/T] tp 10 VFM(V)<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>**----- End of picture text -----**<br>


3/9 

**Characteristics** 

**STTH1212** 

## **Figure 3. Relative variation of thermal impedance junction to case versus pulse duration** 

## **Figure 4. Peak reverse recovery current versus dIF/dt (typical values)** 

**==> picture [462 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth(j-c)/Rth(j-c) IRM(A)<br>1.0 40<br>VR=600V<br>0.9 35 T =125°Cj<br>IF=2 x IF(AV)<br>0.8<br>30<br>0.7<br>0.6 25 IF=IF(AV)<br>IF=0.5 x IF(AV)<br>0.5 20<br>0.4 15<br>0.3 Single pulse<br>10<br>0.2<br>0.1 5<br>tp(s) dIF/dt(A/µs)<br>0.0 0<br>1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


**Figure 5. Reverse recovery time versus dIF/dt (typical values)** 

## **Figure 6. Reverse recovery charges versus dIF/dt (typical values)** 

**==> picture [462 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
trr(ns) Qrr(µC)<br>600 5.0<br>550 VT =125°CjR=600V 4.5 VT =125°CjR=600V<br>500 IF=2 x IF(AV) 4.0 IF=2 x IF(AV)<br>450 3.5<br>400 IF=IF(AV) 3.0<br>350 IF=0.5 x IF(AV) 2.5 IF=IF(AV)<br>300 2.0<br>250 1.5 IF=0.5 x IF(AV)<br>200 1.0<br>150 dIF/dt(A/µs) 0.5 dIF/dt(A/µs)<br>100 0.0<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>Figure 7. Softness factor versus dIF/dt  Figure 8. Relative variations of dynamic<br>(typical values) parameters versus junction<br>temperature<br>S factor<br>4.03.5 IT =125°CVFjR≤=600V2xIF(AV) 2.252.00 Reference: T =125°CVIFR=I=600VF(AV)j<br>1.75 S factor<br>3.0 1.50<br>2.5 1.25<br>1.00<br>2.0 trr<br>0.75 IRM<br>1.5 0.50<br>QRR<br>1.0 0.25 T (°C)j<br>dIF/dt(A/µs) 0.00<br>0.5 25 50 75 100 125<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


4/9 

**STTH1212** 

**Characteristics** 

**Figure 9. Transient peak forward voltage versus dIF/dt (typical values)** 

**Figure 10. Forward recovery time versus dIF/dt (typical values)** 

**==> picture [462 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
VFP(V) tfr(ns)<br>4540 IT =125°CFj=IF(AV) 750700 VFR=1.5 x VT =125°CIFj =IF(AV)F max.<br>650<br>35<br>600<br>30 550<br>25 500<br>20 450<br>400<br>15<br>350<br>10<br>300<br>5 dIF/dt(A/µs) 250 dIF/dt(A/µs)<br>0 200<br>0 100 200 300 400 500 0 100 200 300 400 500<br>**----- End of picture text -----**<br>


## **Figure 11. Junction capacitance versus reverse voltage applied (typical values)** 

**Figure 12. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, ecu = 35 µm)** 

**==> picture [462 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
C(pF) Rth(j-a)(°C/W)<br>1000 80<br>F=1MHz<br>VOSC=30mVRMS 70<br>T =25°Cj<br>60<br>100<br>50<br>40<br>30<br>10<br>20<br>10<br>VR(V) SCU(cm²)<br>1 0<br>1 10 100 1000 0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br>


5/9 

**STTH1212** 

**Package mechanical data** 

## **2 Package mechanical data** 

Epoxy meets UL94, V0 

Cooling method: by conduction (C) 

Recommended torque value: 0.55 Nm (TO-220AC) 

Maximum torque value: 0.7 Nm (TO-220AC) 

## **Table 5. T0-220AC dimensions** 

|**L2**|||||||**A**<br>**C**<br>**D**<br>**L7**<br>**E**<br>**M**|**REF.**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||**Millimeters**||**Inches**||
||||||||||**Min.**|**Max.**|**Min.**|**Max.**|
|||||||||A|4.40|4.60|0.173|0.181|
||||**H2**|||**L5**<br>**L6**<br>**L9**<br>**L4**|||||||
||||**Ø I**|||||C|1.23|1.32|0.048|0.051|
|||||||||D|2.40|2.72|0.094|0.107|
|||||||**L5**|||||||
|||||||||E|0.49|0.70|0.019|0.027|
||**F1**||||||||||||
|||||||||F|0.61|0.88|0.024|0.034|
||||||||||||||
|||||||||F1|1.14|1.70|0.044|0.066|
|||||||||G|4.95|5.15|0.194|0.202|
|||||||||H2|10.00|10.40|0.393|0.409|
||**F**|||||||L2|16.40 typ.||0.645 typ.||
|||||||||L4|13.00|14.00|0.511|0.551|
|||||||||L5|2.65|2.95|0.104|0.116|
||||||||||||||
|||||||||L6|15.25|15.75|0.600|0.620|
||||**G**||||||||||
|||||||||L7|6.20|6.60|0.244|0.259|
|||||||||L9|3.50|3.93|0.137|0.154|
|||||||||M|2.6 typ.||0.102 typ.||
|||||||||Diam. I|3.75|3.85|0.147|0.151|



6/9 

**STTH1212** 

**Package mechanical data** 

|**Table 6.**|**Table 6.**|**D2PAK dimensions**|**D2PAK dimensions**|**D2PAK dimensions**|**D2PAK dimensions**||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**L**|||||**ESS THAN 2mm**<br>**A**<br>**D**<br>**R**<br>**V2**|**REF**|**.**<br>**DIMENSIONS**<br>**Millimeters**<br>**Inches**<br>**Min.**<br>**Max**<br>**Min.**<br>**Max.**||||
||||||||||**Inches**||
|||||||||**Max**|**Min.**|**Max.**|
|||||||A|4.40|4.60|0.173|0.181|
||**L2**|||**C2**|||||||
|||||||A1|2.49|2.69|0.098|0.106|
||||**E**||||||||
|||||||A2|0.03|0.23|0.001|0.009|
||||||||||||
||**L3**|||||B|0.70|0.93|0.027|0.037|
|||||||B2|1.14|1.70|0.045|0.067|
|||||||C|0.45|0.60|0.017|0.024|
||||||||||||
||||**G**|**B**<br>**B2**<br>*** FLAT ZONE NO L**<br>**A2**<br>**M**<br>**C**<br>**A1**<br>*||C2|1.23|1.36|0.048|0.054|
||||||||||||
|||||||D|8.95|9.35|0.352|0.368|
|||||||E|10.00|10.40|0.393|0.409|
|||||||G|4.88|5.28|0.192|0.208|
|||||||L|15.00|15.85|0.590|0.624|
|||||||L2|1.27|1.40|0.050|0.055|
|||||||L3|1.40|1.75|0.055|0.069|
||||||||||||
|||||||M|2.40|3.20|0.094|0.126|
|||||||R|0.40 typ.||0.016 typ.||
|||||||V2|0°|8°|0°|8°|



**Figure 13. D[2] PAK footprint (dimensions in mm)** 

**==> picture [211 x 125] intentionally omitted <==**

**----- Start of picture text -----**<br>
16.90<br>10.30 5.08<br>1.30<br>3.70<br>8.90<br>**----- End of picture text -----**<br>


In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 

7/9 

**Ordering information** 

**STTH1212** 

## **3 Ordering information** 

|**Part Number**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|STTH1212D|STTH1212D|TO-220AC|1.86 g|50|Tube|
|STTH1212G|STTH1212G|D2PAK|1.48 g|50|Tube|
|STTH1212G-TR|STTH1212G|D2PAK|1.48 g|1000|Tape & reel|



## **4 Revision history** 

|**Date**|**Revision**|**Description of Changes**|
|---|---|---|
|02-Mar-2006|1|First issue.|



8/9 

**STTH1212** 

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9/9 



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