# Power MOSFET, N Channel, 20 V, 5 A, 0.025 ohm, SOT-23, Surface Mount
**URL**: https://novapart.co/products/STT5N2VH5/power-mosfet-n-channel-20-v-5-a-0025-ohm-sot-23
**SKU**: STT5N2VH5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1630
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Available until stocks are exhausted
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | STripFET V Series |
| Qualification | - |
| Power Dissipation | 1.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.025ohm |
| Gate Source Threshold Voltage Max | 700mV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4036338/)
## **STT5N2VH5**
## N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET
in a SOT23-6L package
**Datasheet — production data**
## **Features**
**==> picture [68 x 54] intentionally omitted <==**
**----- Start of picture text -----**
4
5
6 3
2
1
SOT23-6L
**----- End of picture text -----**
|**Order code**|**VDS**|**RDS(on) max**|**ID**|**PTOT**|
|---|---|---|---|---|
|STT5N2VH5|20 V|0.04Ω(VGS=2.5 V)|5 A|1.6 W|
- Very low profile package
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
## **Applications**
**Figure 1. Internal schematic diagram**
- Switching applications
## **Description**
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
**Table 1. Device summary**
|**Order code**|**Marking**|**Packages**|**Packaging**|
|---|---|---|---|
|STT5N2VH5|STD1|SOT23-6L|Tape and reel|
_www.st.com_
March 2014
DocID026116 Rev 1
1/13
This is information on a product in full production.
**Contents**
**STT5N2VH5**
|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
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**STT5N2VH5**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2. Absolute maximum ratings**
||**Table 2. Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage|20|V|
|VGS|Gate-source voltage|± 8|V|
|ID
(1)|Drain current (continuous) at Tpcb= 25 °C|5|A|
|ID
(1)|Drain current (continuous) at Tpcb= 100 °C|3.1|A|
|IDM
(1)(2)|Drain current (pulsed)|20|A|
|PTOT
(1)|Total dissipation at Tpcb= 25 °C|1.6|W|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature||°C|
1. This value is rated according to Rthj-pcb
2. Pulse width is limited by safe operating area
**Table 3. Thermal data**
||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-pcb
(1)|Thermal resistance junction-pcb max|78|°C/W|
1. When mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec.
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**STT5N2VH5**
**Electrical characteristics**
## **2 Electrical characteristics**
(TC = 25 °C unless otherwise specified)
## **Table 4. On /off states**
|||**Table 4. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source
breakdown voltage|ID= 1 mA, VGS= 0|20|||V|
|IDSS|Zero gate voltage
drain current (VGS= 0)|VDS= 20 V|||1|μA|
|||VDS= 20 V, TC=125 °C|||10|μA|
|IGSS|Gate-body leakage
current (VDS= 0)|VGS= ± 8 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|0.7|||V|
|RDS(on)|Static drain-source
on-resistance|VGS= 4.5 V, ID= 2 A||0.025|0.03|Ω|
|||VGS= 2.5 V, ID= 2 A||0.031|0.04|Ω|
## **Table 5. Dynamic**
|||**Table 5. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 16 V, f = 1 MHz,
VGS= 0|-|367|-|pF|
|Coss|Output capacitance||-|92|-|pF|
|Crss|Reverse transfer
capacitance||-|16|-|pF|
|Qg|Total gate charge|VDD= 16 V, ID= 2 A,
VGS= 4.5 V
(see_Figure 14_)|-|4.6|-|nC|
|Qgs|Gate-source charge||-|0.9|-|nC|
|Qgd|Gate-drain charge||-|1|-|nC|
## **Table 6. Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Voltage delay time|VDD= 16 V, ID= 2 A,
RG= 4.7Ω,VGS= 4.5 V
(see_Figure 15_and_Figure 18_)|-|4.8|-|ns|
|tr (V)|Voltage rise time||-|14.4|-|ns|
|td (off)|Current fall time||-|17|-|ns|
|tf|Crossing time||-|4|-|ns|
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DocID026116 Rev 1
**STT5N2VH5**
**Electrical characteristics**
**Table 7. Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||5|A|
|ISDM (1)|Source-drain current (pulsed)||-||20|A|
|VSD (2)|Forward on voltage|ISD= 2 A, VGS= 0|-||1.1|V|
|trr|Reverse recovery time|ISD= 2 A, di/dt = 100 A/μs
VDD= 16 V, Tj= 150 °C
(see_Figure 18_)|-|10||ns|
|Qrr|Reverse recovery charge||-|24||nC|
|IRRM|Reverse recovery current||-|4.8||A|
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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**STT5N2VH5**
**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2. Safe operating area**
**==> picture [228 x 171] intentionally omitted <==**
**----- Start of picture text -----**
ID AM18141v1
(A)
100µs
10
1ms
1
10ms
Tj=150 ° C
Tc=25°C
Single pulse
0.1
0.1 1 10 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
**Figure 4. Output characteristics**
## **Figure 3. Thermal impedance**
**==> picture [228 x 171] intentionally omitted <==**
**----- Start of picture text -----**
AM18127v1
K
δ=0.5
0.2
0.1
10 [-1]
0.05
0.02
0.01 pcb
10 [-2]
Single pulse
10 [-3]
10 [-5] 10-4 10 [-3] 10 [-2] 10 [-1] 10 [0] tp(s)
**----- End of picture text -----**
**Figure 5. Transfer characteristics**
**==> picture [462 x 176] intentionally omitted <==**
**----- Start of picture text -----**
AM18128v1 AM18129v1
ID(A) ID
VGS=2.5, 3.5, 4.5, 5.5, 6.5 V (A) VDS=4V
20 20
1.5V
16 16
12 12
8 8
4 4
0.5V
0 0
0 1 2 3 4 VDS(V) 0 0.2 0.4 0.6 0.8 1 1.2 VGS(V)
**----- End of picture text -----**
## **Figure 6. Gate charge vs gate-source voltage**
**==> picture [228 x 171] intentionally omitted <==**
**----- Start of picture text -----**
VGS AM18130v1
(V) VDD=10V
I D =2A
6
4
2
0
0 2 4 6 Qg(nC)
**----- End of picture text -----**
**Figure 7. Static drain-source on-resistance**
**==> picture [228 x 171] intentionally omitted <==**
**----- Start of picture text -----**
AM18132v1
RDS(on)
(mΩ)
VGS=4.5V
26
25.6
25.2
24.8
24.4
24
1 1.5 2 2.5 3 3.5 ID(A)
**----- End of picture text -----**
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**STT5N2VH5**
**Electrical characteristics**
**Figure 8. Capacitance variations**
**Figure 9. Normalized gate threshold voltage vs temperature**
**==> picture [462 x 176] intentionally omitted <==**
**----- Start of picture text -----**
C AM18133v1 VGS(th) AM18134v1
(pF) (norm)
1.2 ID=250µA
Ciss
1
0.8
100
Coss 0.6
0.4
0.2
Crss
10 0
0 4 8 12 16 VDS(V) -55 -30 -5 20 45 70 95 120 TJ(°C)
**----- End of picture text -----**
**Figure 10. Normalized on-resistance vs temperature**
**==> picture [228 x 171] intentionally omitted <==**
**----- Start of picture text -----**
AM18135v1
RDS(on)
(norm)
ID=2A
VGS=10V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55 -30 -5 20 45 70 95 120 TJ(°C)
**----- End of picture text -----**
**Figure 11. Normalized V(BR)DSS vs temperature**
**==> picture [228 x 171] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS AM18136v1
(norm)
ID=1mA
1.1
1.05
1
0.95
0.9
-55 -30 -5 20 45 70 95 120 TJ(°C)
**----- End of picture text -----**
**Figure 12. Source-drain diode forward characteristics**
**==> picture [228 x 171] intentionally omitted <==**
**----- Start of picture text -----**
AM18137v1
VSD (V)
TJ=-55°C
0.9
0.8
TJ=25°C
0.7
0.6
TJ=150°C
0.5
0.4
0.3
0.5 1.5 2.5 3.5 4.5 ISD(A)
**----- End of picture text -----**
DocID026116 Rev 1
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**STT5N2VH5**
**Test circuits**
## **3 Test circuits**
**Figure 13. Switching times test circuit for resistive load**
**Figure 14. Gate charge test circuit**
**==> picture [462 x 162] intentionally omitted <==**
**----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times**
**==> picture [462 x 346] intentionally omitted <==**
**----- Start of picture text -----**
L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
**----- End of picture text -----**
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**STT5N2VH5**
**Package mechanical data**
## **4 Package mechanical data**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark.
DocID026116 Rev 1
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**STT5N2VH5**
**Package mechanical data**
## **Figure 19. SOT23-6L package drawing**
**==> picture [405 x 354] intentionally omitted <==**
**----- Start of picture text -----**
7049714_K
**----- End of picture text -----**
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**Package mechanical data**
**Table 8. SOT23-6L package mechanical data**
|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|||1.25|
|A1|0.00||0.15|
|A2|1.00|1.10|1.20|
|b|0.36||0.50|
|C|0.14||0.20|
|D|2.826|2.926|3.026|
|E|1.526|1.626|1.726|
|e|0.90|0.95|1.00|
|H|2.60|2.80|3.00|
|L|0.35|0.45|0.60|
|θ|0 °C||8 °C|
## **Figure 20. SOT23-6L recommended footprint[(a)]**
**==> picture [405 x 263] intentionally omitted <==**
**----- Start of picture text -----**
7049714_K_footprint
**----- End of picture text -----**
- a. All dimensions are in millimeters
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**STT5N2VH5**
**Revision history**
## **5 Revision history**
**Table 9. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|20-Mar-2014|1|First release. Part number previously included in datasheet
DocID023799|
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DocID026116 Rev 1
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