# Power MOSFET, P Channel, 30 V, 4 A, 0.048 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2807228/)

**URL**: https://novapart.co/products/STT4P3LLH6/power-mosfet-p-channel-30-v-4-a-0048-ohm-sot-23
**SKU**: STT4P3LLH6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1630
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | DeepGATE STripFET H6 |
| Qualification | - |
| Power Dissipation | 1.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.048ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807228/)

## **STT4P3LLH6** 

P-Channel 30 V, 0.048 Ω typ., 4 A STripFET™ H6 DeepGATE™ Power MOSFET in an SOT23-6L package 

**Datasheet** - **preliminary data** 

## **Features** 

**==> picture [102 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>5<br>6<br>3<br>2<br>1<br>SOT23-6L<br>**----- End of picture text -----**<br>


|**Order code**|**VDS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STT4P3LLH6|30 V|0.056Ωat 10 V|4 A|



- Very low on-resistance RDS(on) 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

**Figure 1. Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STT4P3LLH6|4K3L|SOT23-6L|Tape and reel|



_Note: For the P-channel MOSFET the actual polarity of the voltages and the current must be reversed._ 

December 2014 

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 

_www.st.com_ 

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**Contents** 

**STT4P3LLH6** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|30|V|
|VGS|Gate-source voltage|± 20|V|
|ID|Drain current (continuous) at Tamb= 25 °C|4|A|
|ID|Drain current (continuous) at Tamb= 100 °C|2.5|A|
|IDM<br>(1)|Drain current (pulsed)|16|A|
|PTOT|Total dissipation at Tamb= 25 °C|1.6|W|
|Tj|Max. operating junction temperature|150|°C|
|Tstg|Storage temperature|-55 to 150|°C|



1. Pulse width limited by safe operating area 

**Table 3. Thermal resistance Symbol Parameter Value Unit** ~~oe~~ Rthj-amb(1) Thermal resistance junction-amb max 78 °C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec _Note: For the P-channel MOSFET the actual polarity of the voltages and the current must be reversed._ 

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**STT4P3LLH6** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified). 

**Table 4. Static** 

|||**Table 4. Static**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>Voltage (VGS= 0)|ID= 250 µA,|30|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 30 V|||1|µA|
|||VGS= 0 V, VDS= 30 V,<br>Tc = 125 °C|||10||
|IGSS|Gate body leakage current|VDS= 0 V, VGS= ± 20 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1||2.5|V|
|RDS(on)|Static drain-source<br>on- resistance|VGS= 10 V, ID= 2 A||0.048|0.056|Ω|
|||VGS= 4.5 V, ID= 2 A||0.075|0.09||



**Table 5. Dynamic Symbol Parameter Test conditions Min Typ Max Unit** Ciss Input capacitance - 639 - Coss Output capacitance VDS = 25 V, f=1 MHz, - 79 - pF Reverse transfer VGS = 0 Crss capacitance - 52 - Qg Total gate charge - 6 - Qgs Gate-source charge VVDD GS = 15 V, I= 4.5 V D = 4 A - 1.9 - nC ~~fet~~ Qgd Gate-drain charge - 2.1 - **Table 6. Switching times Symbol Parameter Test conditions Min Typ Max Unit** td(on) Voltage delay time - 5.4 - tr (V) Voltage rise time VDD = 15 V, ID = 2 A, - 5 - ns td (off) Current fall time RG = 4.7 Ω, VGS = 10 V - 19.2 - tf Crossing time - 3.4 - ~~=~~ DocID024615 Rev 2 

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**STT4P3LLH6** 

**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>(1)|Forward on voltage|ISD=4 A, VGS= 0|-||1.1|V|
|trr|Reverse recovery time|ISD= 4 A,<br>di/dt = 100 A/µs,<br>VDD= 16 V, TJ= 150 °C|-|11.2||ns|
|Qrr|Reverse recovery charge||-|3.5||nC|
|IRRM|Reverse recovery current||-|0.6||A|



1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

_Note: For the P-channel MOSFET the actual polarity of the voltages and the current must be reversed._ 

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**STT4P3LLH6** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

## **Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

## **Figure 6. Gate charge vs gate-source voltage** 

**Figure 7. Static drain-source on-resistance** 

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**STT4P3LLH6** 

**Electrical characteristics** 

**Figure 8. Normalized V(BR)DSS vs temperature** 

**Figure 10. Normalized gate threshold voltage vs. temperature** 

**Figure 9. Capacitance variations** 

**Figure 11. Normalized on-resistance vs. temperature** 

**Figure 12. Source-drain diode forward characteristics** 

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**STT4P3LLH6** 

**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

**Figure 15. Test circuit for inductive load switching and diode recovery times** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

**Figure 16. SOT23-6L package drawing** 

**==> picture [32 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7049714_K<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 8. SOT23-6L package mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|||1.25|
|A1|0.00||0.15|
|A2|1.00|1.10|1.20|
|b|0.36||0.50|
|C|0.14||0.20|
|D|2.826|2.926|3.026|
|E|1.526|1.626|1.726|
|e|0.90|0.95|1.00|
|H|2.60|2.80|3.00|
|L|0.35|0.45|0.60|
|θ|0°||8°|



**Figure 17. SOT23-6L recommended footprint (dimensions in mm)** 

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**STT4P3LLH6** 

**Revision history** 

## **5 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-May-2013|1|First release.|
|09-Dec-2014|2|Text edits throughout document<br>On cover page:<br>– changed title description<br>– updated_Features_<br>– updated_Description_<br>Updated_Table 4_<br>In_Table 5_, changed values and test conditions<br>In_Table 6_, changed values and test conditions<br>In_Table 7_, changed values and test conditions<br>Added_Section 2.1: Electrical characteristics (curves)_<br>Updated_Section 3: Test circuits_<br>Updated_Section 4: Package mechanical data_|



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**STT4P3LLH6** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

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