# Power MOSFET, N Channel, 20 V, 6 A, 0.045 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:9935762/)

**URL**: https://novapart.co/products/STS6NF20V/power-mosfet-n-channel-20-v-6-a-0045-ohm-soic
**SKU**: STS6NF20V
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2130
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs:600mV; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 2.7V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 600mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9935762/)

**STS6NF20V** 

Datasheet 

N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET™ II Power MOSFET in an SO-8 package 

**==> picture [457 x 258] intentionally omitted <==**

**----- Start of picture text -----**<br>
Features<br>Order code VDS RDS(on) max. ID<br>40 mΩ (@4.5 V)<br>4 STS6NF20V 20 V 6 A<br>os 1 a S 45 mΩ (@2.7 V) e<br>SO-8 • Ultra low threshold gate drive<br>• 100% avalanche tested<br>• Low gate charge<br>1 8<br>S D<br>Applications<br>2 7<br>• Switching applications<br>S D<br>Description<br>S D<br>3 6 This Power MOSFET series has been developed using STMicroelectronics' unique<br>STripFET™ process, which is specifically designed to minimize input capacitance<br>G D and gate charge. This renders the device suitable for use as primary switch in<br>4 5 advanced high-efficiency isolated DC-DC converters for telecom and computer<br>applications, and applications with low gate charge driving requirements.<br>SC12830N<br>**----- End of picture text -----**<br>


This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 

|**Product summary**<br>~~ee~~|**Product summary**<br>~~ee~~|
|---|---|
|**Order code**|STS6NF20V|
|**Marking**|6F20V-|
|**Package**|SO-8|
|**Packing**|Tape and reel|



**DS2184** - **Rev 4** - **April 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STS6NF20V Electrical ratings** 

**1 Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|20|V|
|VGS|Gate-source voltage|±12|V|
|ID|Drain current (continuous) at Tamb= 25 °C|6|A|
||Drain current (continuous) at Tamb= 100 °C|3.8|A|
|IDM(1)|Drain current (pulsed)|24|A|
|PTOT|Total dissipation at Tamb= 25 °C|2.5|W|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range||°C|



_1. Pulse width limited by safe operating area._ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-amb|Thermal resistance junction-ambient|50|°C/W|



**DS2184** - **Rev 4** 

**page 2/13** 

**STS6NF20V Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

## **Table 3. On-/off-states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 250 μA|20|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 20 V|||1|µA|
|||VGS= 0 V, VDS= 20 V<br>TC= 125 °C(1)|||10|µA|
|IGSS|Gate body leakage current|VDS= 0 V, VGS= ±12 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDD= VGS, ID= 250 µA|0.6|||V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 4.5 V, ID= 3 A||30|40|mΩ|
|||VGS= 2.7 V, ID= 3 A||37|45||
|||VGS= 1.95 V, ID= 0.9 A|||90||



_1. Defined by design, not subject to production test._ 

**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs|Forward transconductance||6.5|10|15|S|
|Ciss|Input capacitance|VDS= 15 V, f = 1 MHz,<br>VGS= 0 V|320|460|640|pF|
|Coss|Output capacitance||130|200|280|pF|
|Crss|Reverse transfer capacitance||33|50|68|pF|
|Qg|Total gate charge|VDD= 16 V, ID= 6 A<br>VGS= 0 to 4.5 V<br>(seeFigure 12. Test circuit for<br>gate charge behavior)|5.5|8.5|11.5|nC|
|Qgs|Gate-source charge||1.2|1.8|2.5|nC|
|Qgd|Gate-drain charge||1.6|2.4|3.4|nC|



**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 10 V, ID= 3 A,<br>RG= 4.7 Ω, VGS= 4.5 V<br>(seeFigure 11. Test circuit for<br>resistive load switching timesand<br>Figure 16. Switching time<br>waveform)|-|7|20|ns|
|tr|Rise time||-|33|45|ns|
|td(off)|Turn-off delay time||-|27|40|ns|
|tf|Fall time||-|10|20|ns|



**DS2184** - **Rev 4** 

**page 3/13** 

**STS6NF20V Electrical characteristics** 

## **Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||6|A|
|ISDM(1)|Source-drain current (pulsed)||-||24|A|
|VSD(2)|Forward on voltage|ISD= 6 A, VGS= 0 V|-||1.5|V|
|trr|Reverse recovery time|ISD= 6 A, di/dt = 100 A/µs,<br>VDD= 10 V, TJ= 150 °C<br>(seeFigure 16. Switching time<br>waveform)|-|26||ns|
|Qrr|Reverse recovery charge||-|13||nC|
|IRRM|Reverse recovery current||-|1||A|



_1. Pulse width limited by safe operating area_ 

_2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%_ 

**DS2184** - **Rev 4** 

**page 4/13** 

**STS6NF20V Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [124 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Safe operating area<br>**----- End of picture text -----**<br>


**==> picture [199 x 194] intentionally omitted <==**

**Figure 3. Output characteristics** 

**==> picture [200 x 193] intentionally omitted <==**

**==> picture [126 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Thermal impedance<br>**----- End of picture text -----**<br>


**==> picture [48 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth = k Rthj-amb<br>**----- End of picture text -----**<br>


**==> picture [57 x 117] intentionally omitted <==**

**Figure 4. Transfer characteristics** 

**==> picture [200 x 193] intentionally omitted <==**

**DS2184** - **Rev 4** 

**page 5/13** 

**STS6NF20V Electrical characteristics (curves)** 

**Figure 5. Source-drain diode forward characteristics** 

**==> picture [186 x 170] intentionally omitted <==**

**Figure 7. Gate charge vs gate-source voltage** 

**==> picture [177 x 182] intentionally omitted <==**

**Figure 9. Normalized gate threshold voltage vs temperature** 

**==> picture [187 x 175] intentionally omitted <==**

**Figure 6. Static drain-source on-resistance** 

**==> picture [193 x 191] intentionally omitted <==**

**Figure 8. Capacitance variations** 

**==> picture [190 x 185] intentionally omitted <==**

**Figure 10. Normalized on-resistance vs temperature** 

**==> picture [187 x 176] intentionally omitted <==**

**DS2184** - **Rev 4** 

**page 6/13** 

**STS6NF20V Test circuits** 

## **3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11. Test circuit for resistive load switching times Figure 12. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Test circuit for inductive load switching and Figure 14. Unclamped inductive load test circuit<br>diode recovery times<br>L<br>D A A A VD<br>G D.U.T. fastdiode 100 µH + 2200µF 3.3µF VDD<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Unclamped inductive waveform Figure 16. Switching time waveform<br>V(BR)DSS<br>VD ton toff<br>td(on) tr td(off) tf<br>IDM 90% 90%<br>10%<br>ID 0 10% VDS<br>VDD VDD<br>VGS 90%<br>0 10%<br>AM01472v1<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS2184** - **Rev 4** 

**page 7/13** 

**STS6NF20V Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

## **4.1 SO-8 package information** 

**Figure 17. SO-8 package outline** 

**==> picture [125 x 111] intentionally omitted <==**

**==> picture [78 x 46] intentionally omitted <==**

**==> picture [91 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0016023_So-807_fig2_Rev10<br>**----- End of picture text -----**<br>


**DS2184** - **Rev 4** 

**page 8/13** 

**STS6NF20V SO-8 package information** 

**Table 7. SO-8 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|||1.75|
|A1|0.10||0.25|
|A2|1.25|||
|b|0.31||0.51|
|b1|0.28||0.48|
|c|0.10||0.25|
|c1|0.10||0.23|
|D|4.80|4.90|5.00|
|E|5.80|6.00|6.20|
|E1|3.80|3.90|4.00|
|e||1.27||
|h|0.25||0.50|
|L|0.40||1.27|
|L1||1.04||
|L2||0.25||
|k|0°||8°|
|ccc|||0.10|



**Figure 18. SO-8 recommended footprint (dimensions are in mm)** 

0016023_So-807_footprint_Rev10 

**DS2184** - **Rev 4** 

**page 9/13** 

**STS6NF20V SO-8 packing information** 

## **4.2 SO-8 packing information** 

## **Figure 19. SO-8 tape and reel dimensions** 

**==> picture [297 x 262] intentionally omitted <==**

**----- Start of picture text -----**<br>
A D N<br>T<br>Po<br>Bo<br>Ko Ao P<br>0016023_SO-8_O7_T_R<br>**----- End of picture text -----**<br>


**Table 8. SO-8 tape and reel mechanical data** 

|**Di**|**mm**|**mm**||
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A||-|330|
|C|12.8||13.2|
|D|20.2|||
|N|60|||
|T|||22.4|
|Ao|8.1||8.5|
|Bo|5.5||5.9|
|Ko|2.1||2.3|
|Po|3.9||4.1|
|P|7.9||8.1|



**DS2184** - **Rev 4** 

**page 10/13** 

**STS6NF20V** 

## **Revision history** 

**Table 9. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|07-Feb-2008|1|Initial release.|
|18-Nov-2009|2|Added new RDS(on) value on_Table 4: On /off states_|
|29-Nov-2012|3|Max values have been added in_Table 5: Dynamic_and_Table 6: Switching_<br>_times_.<br>_Section 4: Package mechanical data_has been updated.<br>Minor text changes.|
|04-Apr-2018|4|Removed maturity status indication from cover page. The document status is<br>production data.<br>Updated product marking on cover page.<br>UpdatedTable 3. On-/off-states.<br>UpdatedSection 4 Package information.<br>Minor text changes|



**DS2184** - **Rev 4** 

**page 11/13** 

**STS6NF20V Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
||**4.1**<br>SO-8 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**<br>SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11**||



**DS2184** - **Rev 4** 

**page 12/13** 

**STS6NF20V** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2018 STMicroelectronics – All rights reserved 

**DS2184** - **Rev 4** 

**page 13/13** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/sts6nf20v/mosfet-n-so-8/dp/9935762)
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