# Power MOSFET, P Channel, 30 V, 5 A, 0.048 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3132764RL/)

**URL**: https://novapart.co/products/STS5P3LLH6/power-mosfet-p-channel-30-v-5-a-0048-ohm-soic
**SKU**: STS5P3LLH6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2880
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 3 - 168 hours |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | STripFET H6 DeepGATE |
| Qualification | - |
| Power Dissipation | 2.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.048ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132764RL/)

## **STS5P3LLH6** 

P-channel 30 V, 0.048 Ω typ., 5 A STripFET™ H6 DeepGATE™ Power MOSFET in an SO-8 package 

**Datasheet** - **preliminary data** 

## **Features** 

|**Order code**<br>~~pf~~|**VDS**<br>~~pf|~~|**RDS(on)max**<br>~~|~~|**ID**|
|---|---|---|---|
|STS5P3LLH6<br>~~pf~~|30 V<br>~~pf|~~|0.056Ωat 10 V<br>~~|~~|5 A|



- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

**==> picture [25 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
SO-8<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Figure 1. Internal schematic diagram** 

## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STS5P3LLH6|5K3L|SO-8|Tape and reel|



_Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed._ 

## December 2014 

DocID024614 Rev 2 

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 

_www.st.com_ 

1/15 

**Contents** 

**STS5P3LLH6** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|



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**STS5P3LLH6** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|30|V|
|VGS|Gate-source voltage|± 20|V|
|ID|Drain current (continuous) at Tamb= 25 °C|5|A|
|ID|Drain current (continuous) at Tamb= 100 °C|3.2|A|
|IDM<br>(1)|Drain current (pulsed)|20|A|
|PTOT|Total dissipation at Tamb= 25 °C|2.7|W|
|TJ|Operating junction temperature|150|°C|
|Tstg|Storage temperature|-55 to 150|°C|



1. Pulse width limited by safe operating area 

**Table 3. Thermal data Symbol Parameter Value Unit** ~~es~~ Rthj-amb (1) Thermal resistance junction-amb 47 °C/W 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec _Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed._ 

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**STS5P3LLH6** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## (TCASE = 25 °C unless otherwise specified) 

**Table 4. On/off states** 

**Symbol Parameter Test conditions Min Typ Max Unit** Drain-source breakdown V(BR)DSS voltage VGS = 0 V, ID = 250 µA 30 V VGS = 0 V, VDS = 30 V, 1 Zero gate voltage drain IDSS current VGS = 0 V, VDS = 30 V, 10 µA TJ = 125 °C IGSS Gate body leakage current VDS = 0, VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V Static drain-source VGS = 10 V, ID = 2.5 A 0.048 0.056 R Ω DS(on) on-resistance VGS = 4.5 V, ID = 2.5 A 0.075 0.09 **Table 5. Dynamic Symbol Parameter Test conditions Min Typ Max Unit** Ciss Input capacitance - 639 - Coss Output capacitance VDS = 25 V, f=1 MHz - 79 - pF Reverse transfer VGS = 0 Crss capacitance - 52 - Qg Total gate charge - 6 - Qgs Gate-source charge VVDD GS = 15 V, I= 4.5 V D = 5 A - 1.9 - nC ~~=m~~ Qgd Gate-drain charge - 2.1 - **Table 6. Switching times Symbol Parameter Test conditions Min Typ Max Unit** td(on) Turn-on delay time - 5.4 - tr Rise time VDD= 15 V, ID = 5 A, - 5 - ns td(off) Turn-off delay time RG = 4.7 Ω, VGS = 10 V - 19.2 - tf Fall time - 3.4 - ~~=~~ 

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**STS5P3LLH6** 

**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>(1)|Forward on voltage|ISD= 5 A, VGS= 0|-||1.1|V|
|trr|Reverse recovery time|ISD= 5 A,<br>di/dt = 100 A/µs,<br>VDD= 16 V, TJ= 150 °C|-|11.2||ns|
|Qrr|Reverse recovery charge||-|3.5||nC|
|IRRM|Reverse recovery current||-|0.6||A|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

_Note: For the P-channel MOSFET the actual polarity of the voltages and the current must be reversed._ 

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**STS5P3LLH6** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

## **Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

## **Figure 6. Gate charge vs gate-source voltage** 

**Figure 7. Static drain-source on-resistance** 

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**STS5P3LLH6** 

**Electrical characteristics** 

**Figure 8. Normalized V(BR)DSS vs temperature** 

**Figure 10. Normalized gate threshold voltage vs. temperature** 

**Figure 9. Capacitance variations** 

**Figure 11. Normalized on-resistance vs. temperature** 

**Figure 12. Source-drain diode forward characteristics** 

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**STS5P3LLH6** 

**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

**Figure 15. Test circuit for inductive load switching and diode recovery times** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

**==> picture [115 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16. SO-8 drawing<br>**----- End of picture text -----**<br>


**==> picture [44 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0016023_G_FU<br>**----- End of picture text -----**<br>


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**STS5P3LLH6** 

**Package mechanical data** 

**Table 8. SO-8 mechanical data** 

||**Table 8. SO-8 mechanical data**|**Table 8. SO-8 mechanical data**|**Table 8. SO-8 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~||~~ee ee~~|1.75<br>~~ee~~|
|A1<br>~~a~~|0.10||0.25|
|A2<br>~~a~~|1.25|||
|b<br>~~a~~<br>~~Rs~~|0.31||0.51|
|b1<br>~~Rs~~<br>~~Rs~~|0.28||0.48|
|c<br>~~Rs~~<br>~~Rs~~|0.10||0.25|
|c1<br>~~Rs~~<br>~~a~~|0.10||0.23|
|D<br>~~a~~|4.80|4.90|5.00|
|E<br>~~a~~|5.80|6.00|6.20|
|E1<br>~~a~~<br>~~Rs~~|3.80|3.90|4.00|
|e<br>~~Rs~~<br>~~Rs~~||1.27||
|h<br>~~Rs~~<br>~~Rs~~|0.25||0.50|
|L<br>~~Rs~~<br>~~a~~|0.40||1.27|
|L1<br>~~a~~||1.04||
|L2<br>~~a~~||0.25||
|k<br>~~a~~|0°<br>||8°<br>|
|ccc<br>~~ss~~|~~ss~~|~~ss~~|0.10<br>~~ss~~|



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**Package mechanical data** 

**==> picture [286 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. SO-8 recommended footprint (dimensions in mm)<br>**----- End of picture text -----**<br>


Footprint_0016023_G_FU 

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**STS5P3LLH6** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 9. SO-8 tape and reel mechanical data** 

||**Table 9. SO-8 tape and reel mechanical datape and reel mechanical datae and reel mechanical data**|**Table 9. SO-8 tape and reel mechanical datape and reel mechanical datae and reel mechanical data**|**Table 9. SO-8 tape and reel mechanical datape and reel mechanical datae and reel mechanical data**|
|---|---|---|---|
|**Dim**|**mm**|||
||**Min**|**Typ**|**Max**|
|A|||330|
|C|12.8||13.2|
|D|20.2|||
|N|60|||
|T|||22.4|
|Ao|8.1||8.5|
|Bo|5.5||5.9|
|Ko|2.1||2.3|
|Po|3.9||4.1|
|P|7.9||8.1|



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**Packaging mechanical data** 

**==> picture [197 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18. SO-8 tape and reel dimensions<br>**----- End of picture text -----**<br>


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**STS5P3LLH6** 

**Revision history** 

## **6 Revision history** 

**Table 10. Revision history** 

|||**Table 10. Revision historyy**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|09-May-2013|1|First revision.|
|11-Dec-2014|2|Text edits throughout document<br>On cover page:<br>– changed title description<br>– updated_Features_<br>– updated_Description_<br>In_Table 4_, changed_RDS(on)_values<br>In_Table 5_, changed values and test conditions<br>In_Table 6_, changed values and test conditions<br>In_Table 7_, changed values and test conditions<br>Added_Section 2.1: Electrical characteristics (curves)_<br>Updated_Section 3: Test circuits_<br>Updated_Section 4: Package mechanical data_|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/sts5p3llh6/mosfet-p-ch-30v-5a-150deg-c-2/dp/3132764RL)
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