# Power MOSFET, N Channel, 150 V, 5 A, 0.057 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:2807227/) **URL**: https://novapart.co/products/STS5N15F4/power-mosfet-n-channel-150-v-5-a-0057-ohm-soic **SKU**: STS5N15F4 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5590 **Stock**: 50+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Di ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | DeepGATE STripFET | | Qualification | - | | Power Dissipation | 2.5W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 150V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 5A | | Drain Source On State Resistance | 0.057ohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2807227/) **==> picture [61 x 39] intentionally omitted <==** ## **STS5N15F4** N-channel 150 V, 0.057Ω, 5 A, SO-8 STripFET™ DeepGATE™ Power MOSFET ## **Features** |**Type**|**VDSS**|**RDS(on)**
**max**|**ID**| |---|---|---|---| |STS5N15F4|150 V|< 0.063Ω|5 A| - N-channel enhancement mode - 100% avalanched rated **==> picture [58 x 50] intentionally omitted <==** **==> picture [26 x 10] intentionally omitted <==** **----- Start of picture text -----**
SO-8
**----- End of picture text -----**
- Low gate charge - Very low on-resistance ## **Application** - Switching applications ## **Description** This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. ## **Figure 1. Internal schematic diagram** **==> picture [130 x 133] intentionally omitted <==** ## **Table 1. Device summary** |**Order code**|**Marking**|**Package**|**Packaging**| |---|---|---|---| |STS5N15F4|5U15-|SO-8|Tape and reel| 1/11 August 2009 Doc ID 16083 Rev 2 _www.st.com_ **STS5N15F4** **Electrical ratings** ## **1 Electrical ratings** ## **Table 2. Absolute maximum ratings** |**Table 2.**|**Absolute maximum ratings**||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |VDS|Drain-source voltage (VGS= 0)|150|V| |VGS|Gate-source voltage|± 20|V| |ID|Drain current (continuous) at TC= 25 °C|5|A| |ID|Drain current (continuous) at TC=100 °C|3|A| |IDM
(1)|Drain current (pulsed)|20|A| |PTOT|Total dissipation at TC= 25 °C|2.5|W| |Tstg|Storage temperature|-55 to 150|°C| |Tj|Operating junction temperature||| 1. Pulse width limited by safe operating area ## **Table 3. Thermal data** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |Rthj-pcb
(1)|Thermal resistance junction-pcb max|50|°C/W| 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec ## **Table 4. Avalanche characteristics** |**Symbol**|**Parameter**|**Max value**|**Unit**| |---|---|---|---| |IAS|Avalanche current, repetitive or not-repetitive
(pulse width limited by Tjmax)|5|A| |EAS|Single pulse avalanche energy
(starting Tj= 25 °C, ID= IAS, VDD= 140 V)|125|mJ| 2/11 Doc ID 16083 Rev 2 **STS5N15F4** **Electrical characteristics** ## **2 Electrical characteristics** (TJ = 25 °C unless otherwise specified) ## **Table 5. On/off states** |**Table 5.**|**On/off states**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source breakdown
voltage|ID= 1 mA, VGS= 0|150|||V| |IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= 150 V,
VDS= 150 V, @125 °C|||1
10|µA
µA| |IGSS|Gate body leakage current
(VDS= 0)|VGS= ±20 V|||±100|nA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2||4|V| |RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 2.5 A||0.057|0.063|Ω| ## **Table 6. Dynamic** |**Table 6.**|**Dynamic**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer
capacitance|VDS=25 V, f = 1 MHz,
VGS= 0|-|2710
180
69.5|-|pF
pF
pF| |Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD= 75 V, ID= 5 A
VGS=10 V
_Figure 14 on page 7_|-|48
10.8
13.7|-|nC
nC
nC| |Rg|Gate input resistance|f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain|-|1.9|-|Ω| 3/11 Doc ID 16083 Rev 2 **STS5N15F4** **Electrical characteristics** **Table 7. Switching times** |**Table 7.**|**Switching times**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |td(on)
tr
td(off)
tf|Turn-on delay time
Rise time
Turn-off delay time
Fall time|VDD= 75 V, ID= 3 A,
RG=4.7Ω,VGS=10 V
_Figure 13 on page 7_|-|13.5
5.1
39.7
11.4|-|ns
ns
ns
ns| ## **Table 8. Source drain diode** |**Table 8.**|**Source drain diode**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**| |ISD|Source-drain current||-||5|A| |ISDM
(1)|Source-drain current (pulsed)||-||20|A| |VSD
(2)|Forward on voltage|ISD= 6 A, VGS= 0|-||1.3|V| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 6 A,
di/dt = 100 A/µs,
VR= 120 V, TJ= 150 °C
_Figure 15 on page 7_|-|85.2
277.6
8.2||ns
nC
A| 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/11 Doc ID 16083 Rev 2 **STS5N15F4** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **Figure 2. Safe operating area Figure 3. Thermal impedance** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM04995v1
(A)
Tj=150°C
Tc=25°C
100
Sinlge
pulse
10
1
10ms
100ms
0.1
1s
0.01
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
## **Figure 4. Output characteristics** **==> picture [176 x 169] intentionally omitted <==** ## **Figure 5. Transfer characteristics** **==> picture [463 x 374] intentionally omitted <==** **----- Start of picture text -----**
AM04986v1 AM04987v1
ID ID
(A) (A)
70 VGS=10V 70
VDS=10V
60 60
6V
50 50
40 40
30 30
5V
20 20
10 10
4V
0 0
0 5 10 15 VDS(V) 0 2 4 6 8 10 VGS(V)
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
BVDSS AM04989v1 RDS(on) AM04988v1
(norm) (Ω)
140
1.10
120
ID = 1 mA VGS=10V
100
1.05
80
1.00 60
40
0.95
20
0.90 0
-50 -25 0 25 50 75 100 125 150 TJ(°C) 0 1 2 3 4 5 ID(A)
**----- End of picture text -----**
5/11 Doc ID 16083 Rev 2 **STS5N15F4** **Electrical characteristics** **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** **==> picture [463 x 176] intentionally omitted <==** **----- Start of picture text -----**
VGS AM04990v1 C (pF) AM04991v1
(V)
12 VDD=75V 2500 TJ=25°C
ID=5A f=1MHz
10 2000 Ciss
8 2000
6 1500
4 1000
2 Crss 500
Coss
0 0
0 10 20 30 40 50 Qg(nC) 0 20 40 60 80 100 120 140 VDS(V)
**----- End of picture text -----**
**Figure 10. Normalized gate threshold voltage vs temperature** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VGS(th) AM04992v1
(norm)
1.10
ID= 250 µA
1.00
0.90
0.80
0.70
0.60
0.50
-50 -25 0 25 50 75 100 125 150 TJ(°C)
**----- End of picture text -----**
**Figure 11. Normalized on resistance vs temperature** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
RDS(on) AM04993v1
(norm)
2.5
VGS = 10 V
ID = 2.5 A
2.0
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150 TJ(°C)
**----- End of picture text -----**
**Figure 12. Source-drain diode forward characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VSD AM04994v1
(V) TJ=-55°C
0.9
0.8
TJ=25°C
0.7
0.6
TJ=175°C
0.5
0.4
0 10 20 30 40 50 ISD(A)
**----- End of picture text -----**
6/11 Doc ID 16083 Rev 2 **STS5N15F4** **Test circuits** ## **3 Test circuits** **Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load** **==> picture [463 x 162] intentionally omitted <==** **----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. µF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit** **==> picture [463 x 183] intentionally omitted <==** **----- Start of picture text -----**
L
A A A
D
G D.U.T. FASTDIODE L=100µH VD 2200 3.3
S B 3.3 1000 µF µF VDD
25 Ω B B D µF µF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
**----- End of picture text -----**
**==> picture [463 x 162] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
**----- End of picture text -----**
7/11 Doc ID 16083 Rev 2 **STS5N15F4** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 8/11 Doc ID 16083 Rev 2 **STS5N15F4** **Package mechanical data** ## **SO-8 MECHANICAL DATA** |**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**| |---|---|---|---|---|---|---| |||||||| |||||||| |**DIM.**|**mm.**|||**inch**||| ||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**| |A|||1.75|||0.068| |a1|0.1||0.25|0.003||0.009| |a2|||1.65|||0.064| |a3|0.65||0.85|0.025||0.033| |b|0.35||0.48|0.013||0.018| |b1|0.19||0.25|0.007||0.010| |C|0.25||0.5|0.010||0.019| |c1|45 (typ.)|||||| |D|4.8||5.0|0.188||0.196| |E|5.8||6.2|0.228||0.244| |e||1.27|||0.050|| |e3||3.81|||0.150|| |F|3.8||4.0|0.14||0.157| |L|0.4||1.27|0.015||0.050| |M|||0.6|||0.023| |S|8 (max.)|||||| |||||||| **==> picture [401 x 260] intentionally omitted <==** 9/11 Doc ID 16083 Rev 2 **STS5N15F4** **Revision history** ## **5 Revision history** **Table 9.** **Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |23-Jul-2009|1|First release| |03-Aug-2009|2|Updated figures_6_,_7_,_10_and_11_| 10/11 Doc ID 16083 Rev 2 **STS5N15F4** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. 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