# Dual MOSFET, N Channel, 60 V, 4 A, 0.045 ohm

![Product image](https://novapart.co/image/farnell:2409151/)

**URL**: https://novapart.co/products/STS4DNF60L/dual-mosfet-n-channel-60-v-4-a-0045-ohm
**SKU**: STS4DNF60L
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.3660
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2.5W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 60V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 4A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.045ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2409151/)

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## **STS4DNF60L** N-channel 60 V, 0.045 Ω , 4 A, SO-8 STripFET™ Power MOSFET 

## **Features** 

|**Features**||||
|---|---|---|---|
|**Type**|**VDSS**|**RDS(on)**|**ID**|
|STS4DNF60L|60V|<0.055Ω|4A|



- Standard outline for easy automated surface mount assembly 

- Low threshold drive 

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SO-8<br>**----- End of picture text -----**<br>


## **Application** 

- Switching applications 

## **Description** 

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STS4DNF60L|4DF60L|SO-8|Tape & reel|



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_www.st.com_ 

**Contents** 

**STS4DNF60L** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (VGS= 0)|60|V|
|VGS|Gate- source voltage|± 15|V|
|ID|Drain current (continuous) at TC= 25 °C|4|A|
|ID|Drain current (continuous) at TC= 100 °C|2.5|A|
|IDM<br>(1)|Drain current (pulsed)|16|A|
|PTOT<br>(2)|Total dissipation at TC= 25 °C|2|W|
|EAS<br>(3)|Single pulse avalanche energy|80|mJ|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|- 55 to 150|°C|



1. Pulse width limited by safe operating area 

2. PTOT=1.6 W for single operation 

3. Starting TJ = 25 °C, ID = 4 A, VDD = 30 V 

|**Table 3.**<br>**Thermal data**|**Table 3.**<br>**Thermal data**|**Table 3.**<br>**Thermal data**|**Table 3.**<br>**Thermal data**|
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-pcb|Thermal resistance junction-pcb D.O.(1)|62.5|°C/W|



1. When mounted on inch² FR-4 board, 2 Oz Cu, t < 10sec, dual operation 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

## **Table 4. On /off states** 

|**Table 4.**|**On /off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 250 µA, VGS= 0|60|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= Max rating<br>VDS= Max rating, TC=125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 15 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1|1.7|2.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 2 A<br>VGS= 4.5 V, ID= 2 A||0.045<br>0.050|0.055<br>0.065|Ω<br>Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs|Forward<br>transconductance|VDS=25 V, ID=2 A|-|25|-|S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz, VGS= 0|-|1030<br>140<br>40|-|pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 48 V, ID= 4 A,<br>VGS= 4.5 V<br>(see_Figure 13_)|-|15<br>4<br>4|-|nC<br>nC<br>nC|



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**Electrical characteristics** 

## **Table 6. Switching times** 

|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD= 30 V, ID= 2.2 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 12_)|-|15<br>28|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time||-|45<br>10|-|ns<br>ns|



## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||4<br>16|A<br>A|
|VSD (2)|Forward on voltage|ISD= 4 A, VGS= 0|-||1.2|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 4 A, di/dt = 100 A/µs<br>VDD= 20 V<br>(see_Figure 17_)|-|85<br>85<br>2||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

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## **Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

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**Figure 6. Source-drain diode forward characteristics** 

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**Figure 7. Static drain-source on resistance** 

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**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage Figure 9.** 

## **Capacitance variations** 

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**Figure 10. Normalized gate threshold voltage vs temperature** 

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**Figure 11. Normalized on resistance vs temperature** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit resistive load** 

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**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>µF µF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. µF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit** 

**==> picture [463 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100µH VD 2200 3.3<br>S B 3.3 1000 µF µF VDD<br>25 Ω B B D µF µF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform** 

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**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

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SO-8 MECHANICAL DATA<br>mm. inch<br>DIM.<br>MIN. TYP MAX. MIN. TYP. MAX.<br>A 1.75 0.068<br>a1 0.1 0.25 0.003 0.009<br>a2 1.65 0.064<br>a3 0.65 0.85 0.025 0.033<br>b 0.35 0.48 0.013 0.018<br>b1 0.19 0.25 0.007 0.010<br>C 0.25 0.5 0.010 0.019<br>c1 45 (typ.)<br>D 4.8 5.0 0.188 0.196<br>E 5.8 6.2 0.228 0.244<br>e 1.27 0.050<br>e3 3.81 0.150<br>F 3.8 4.0 0.14 0.157<br>L 0.4 1.27 0.015 0.050<br>M 0.6 0.023<br>S 8 (max.)<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|30-May-2005|5|Initial electronic version|
|29-Mar-2006|6|Modified_Figure 2_and_Figure 3_|
|16-May-2006|7|Modified internal schematic diagram|
|29-Aug-2007|8|Marking has been updated|
|30-Mar-2010|9|Inserted EASvalue in_Table 2: Absolute maximum ratings_|



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