# Dual MOSFET, N Channel, 30 V, 3 A, 0.09 ohm

![Product image](https://novapart.co/image/farnell:1752185RL/)

**URL**: https://novapart.co/products/STS2DNF30L/dual-mosfet-n-channel-30-v-3-a-009-ohm
**SKU**: STS2DNF30L
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1560
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 1.6W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 3A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.09ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752185RL/)

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## **STS2DNF30L** Dual n-channel 30 V, 0.09 Ω, 3 A SO-8 STripFET™ Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STS2DNF30L|30V|<0.11Ω|3A|



- Standard outline for easy automated surface mount assembly 

- Low threshold gate drive 

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## **Application** 

- Switching applications 

## **Description** 

This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STS2DNF30L|2DF30L|SO-8|Tape and reel|



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_www.st.com_ 

**Contents** 

**STS2DNF30L** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (vgs= 0)|30|V|
|VGS|Gate- source voltage|±18|V|
|ID|Drain current (continuous) at TC= 25°C|3|A|
|ID|Drain current (continuous) at TC= 100°C|1.9|A|
|IDM<br>(1)|Drain current (pulsed)|9|A|
|PTOT|Total dissipation at TC= 25°C dual operation<br>Total dissipation at TC= 25°C single operation|1.6<br>2|W<br>W|
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area 

**Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-a|Thermal resistance junction-ambient max single<br>operation|62.5|°C/W|
||Thermal resistance junction-ambient max dual<br>operation|78||
|TJ|Maximum operating junction ambient|150|°C|
|Tstg|Storage temperature|-55 to 175|°C|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

## (TCASE=25°C unless otherwise specified) 

## **Table 4. On/off states** 

|**Table 4.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown voltage|ID= 250 µA, VGS= 0|30|||V|
|IDSS|Zero gate voltage<br>Drain current (VGS= 0)|VDS= Max rating<br>VDS=Max rating,<br>TC=125°C|||1<br>10|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ±18V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|1|1.7|2.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10V, ID= 1A<br>VGS= 5V, ID= 1A||0.09<br>0.13|0.11<br>0.15|Ω<br>Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS>ID(on)xRDS(on)max<br>ID=2.5A|-|2.5|-|S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25V, f = 1 MHz,<br>VGS= 0|-|121<br>45<br>11|-|pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 24V, ID= 2A,<br>VGS= 10V|-<br>-<br>-|4.5<br>1.7<br>0.9|-<br>-<br>-|nC<br>nC<br>nC|



1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. 

**Table 6. Switching times** 

|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD=15 V, ID=1A,<br>RG=4.7Ω,VGS= 4.5V<br>(see Figure 13)|-|19<br>20|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time|VDD=15 V, ID=1A,<br>RG=4.7Ω,VGS= 4.5V<br>(see Figure 13)|-|12<br>8|-|ns<br>ns|



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**Electrical characteristics** 

## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||-<br>-||3<br>12|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 2A, VGS= 0|-||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 2A, VDD= 30V<br>di/dt = 100A/µs,<br>Tj= 150°C<br>(see Figure 15)|-|19<br>8.1<br>0.85||ns<br>nC<br>A|



1. Pulse width limited by safe operating area. 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

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**Figure 4. Output characteristics** 

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## **Figure 5. Transfer characteristics** 

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**Figure 6. Transconductance** 

**Figure 7. Static drain-source on resistance** 

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**Electrical characteristics** 

## **Figure 8. Gate charge vs. gate-source voltage Figure 9.** 

## **Capacitance variations** 

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**Figure 10. Normalized gate threshold voltage vs. temperature** 

**Figure 11. Normalized on resistance vs. temperature** 

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**Figure 12. Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load** 

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## **Figure 15. Test circuit for inductive load switching and diode recovery times** 

**Figure 16. Unclamped inductive load test circuit** 

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## **Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **SO-8 MECHANICAL DATA** 

|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|**SO-8 MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|||1.75|||0.068|
|a1|0.1||0.25|0.003||0.009|
|a2|||1.65|||0.064|
|a3|0.65||0.85|0.025||0.033|
|b|0.35||0.48|0.013||0.018|
|b1|0.19||0.25|0.007||0.010|
|C|0.25||0.5|0.010||0.019|
|c1|45 (typ.)||||||
|D|4.8||5.0|0.188||0.196|
|E|5.8||6.2|0.228||0.244|
|e||1.27|||0.050||
|e3||3.81|||0.150||
|F|3.8||4.0|0.14||0.157|
|L|0.4||1.27|0.015||0.050|
|M|||0.6|||0.023|
|S|8 (max.)||||||
||||||||



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**Revision history** 

## **5 Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-Jun-2004|3|Complete document.|
|10-Nov-2006|4|The document has been reformatted.|
|31-Jan-2007|5|Typo mistake on_Table 2_.|
|03-May-2007|6|RDS(on)Max value has been changed.|
|03-Nov-2009|7|Updated marking in_Table 1_.|



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## Links

- [View this product on Novapart](https://novapart.co/products/STS2DNF30L/dual-mosfet-n-channel-30-v-3-a-009-ohm)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/sts2dnf30l/mosfet-nn-ch-30v-3a-8-soic/dp/1752185RL)
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