# Power MOSFET, N Channel, 30 V, 26 A, 0.0038 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:2344096/) **URL**: https://novapart.co/products/STS26N3LLH6/power-mosfet-n-channel-30-v-26-a-00038-ohm-soic **SKU**: STS26N3LLH6 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €2.4400 **Stock**: 10+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | N Channel | | Power Dissipation | 2.7W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 2.7W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0038ohm | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 26A | | Drain Source On State Resistance | 0.0038ohm | | Gate Source Threshold Voltage Max | 1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2344096/) **==> picture [61 x 39] intentionally omitted <==** ## **STS26N3LLH6** N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET ## **Features** |**Type**|**VDSS**|**RDS(on)**
**max**|**ID**| |---|---|---|---| |STS26N3LLH6|30 V|0.0044Ω|26 A| - RDS(on) * Qg industry benchmark - Extremely low on-resistance RDS(on) - High avalanche ruggedness **==> picture [70 x 79] intentionally omitted <==** **----- Start of picture text -----**
5
7 [6]
8
3 [4]
2
1
SO-8
**----- End of picture text -----**
- Low gate drive power losses - Very low switching gate charge ## **Applications** - Switching applications ## **Description** This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. ## **Figure 1. Internal schematic diagram** **==> picture [130 x 133] intentionally omitted <==** ## **Table 1. Device summary** |**Order code**|**Marking**|**Packag**|**Packaging**| |---|---|---|---| |STS26N3LLH6|26G3L|SO-8|Tape and reel| October 2011 1/14 Doc ID 019030 Rev 2 _www.st.com_ **Contents** **STS26N3LLH6** |**Contents**|**Contents**| |---|---| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**| 2/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Electrical ratings** ## **1 Electrical ratings** ## **Table 2. Absolute maximum ratings** |**Table 2.**|**Absolute maximum ratings**||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |VDS|Drain-source voltage (VGS= 0)|30|V| |VGS
(1)|Gate-source voltage|± 20|V| |ID|Drain current (continuous) at TC= 25 °C|26|A| |ID|Drain current (continuous) at TC=100 °C|16.25|A| |IDM
(2)|Drain current (pulsed)|104|A| |PTOT|Total dissipation at Tamb= 25 °C|2.7|W| |TJ
Tstg|Operating junction temperature
Storage temperature|-55 to 150|°C| 1. Continuous mode 2. Pulse width limited by safe operating area ## **Table 3. Thermal resistance** |**Table 3.**|**Thermal resistance**||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |Rthj-amb
(1)|Thermal resistance junction-ambient|47|°C/W| 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec ## **Table 4. Avalanche data** |**Table 4.**|**Avalanche data**||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |IAV|Not-repetitive avalanche current|40|A| |EAS|Single pulse avalanche energy
(starting Tj=25 °C, ID=IAV)|525|mJ| 3/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Electrical characteristics** ## **2 Electrical characteristics** (TCASE = 25 °C unless otherwise specified) ## **Table 5. On/off states** |**Table 5.**|**On/off states**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source breakdown
voltage (VGS= 0)|ID= 250 µA|30|||V| |IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= 30 V
VDS= 30 V, TC=125 °C|||1
10|µA
µA| |IGSS|Gate body leakage current
(VDS= 0)|VGS= ±20 V|||±100|nA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1|||V| |RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 13 A
VGS= 4.5 V, ID= 13 A||0.0038
0.0047|0.0044
0.0053|Ω
Ω| ## **Table 6. Dynamic** |**Table 6.**|**Dynamic**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer
capacitance|VDS=25 V, f=1 MHz,
VGS=0|-|4040
740
425|-|pF
pF
pF| |Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD=15 V, ID= 26 A
VGS=4.5 V
_Figure 19_|-|40
13
16|-|nC
nC
nC| |RG|Gate input resistance|f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain|-|1.4|-|Ω| 4/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Electrical characteristics** ## **Table 7. Switching times** |**Table 7.**|**Switching times**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |td(on)
tr
td(off)
tf|Turn-on delay time
Rise time
Turn-off delay time
Fall time|VDD=15 V, ID= 13 A,
RG=4.7Ω,VGS=4.5 V
_Figure 13_|-|17
18
75
46|-|ns
ns
ns
ns| ## **Table 8. Source drain diode** |**Table 8.**|**Source drain diode**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**| |ISD|Source-drain current||-||26|A| |ISDM
(1)|Source-drain current (pulsed)||-||104|A| |VSD
(2)|Forward on Voltage|ISD=13 A, VGS=0|-||1.1|V| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD=13 A,
di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
_Figure 15_|-|34
35
2.1||ns
nC
A| 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% 5/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** ## **Figure 2. Safe operating area** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM10015v1
(A)
100
10
10 ms
1
100 ms
1 s
0.1
0.01
0.1 1 10 VDS(V)
**----- End of picture text -----**
## **Figure 3. Thermal impedance** **==> picture [176 x 169] intentionally omitted <==** ## **Figure 4. Output characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM04976v1
ID
(A) VGS=10V
350
300
5V
250
4V
200
150
100
3V
50
0
0 2 4 VDS(V)
**----- End of picture text -----**
## **Figure 5. Transfer characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM04977v1
(A)
350 VDS=1V
300
250
200
150
100
50
0
0 2 4 6 8 10 VGS(V)
**----- End of picture text -----**
## **Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance** **==> picture [463 x 176] intentionally omitted <==** **----- Start of picture text -----**
BVDSS AM04979v1 RDS(on) AM04905v1
(mΩ)
(norm)
5.5 VGS=10V
1.06
5.0
1.04 4.5
4.0
1.02
3.5
1.00
3.0
0.98 2.5
2.0
0.96
1.5
0.94 1
-50 -25 0 25 50 75 100 125 150 TJ(°C) 0 20 40 60 80 ID(A)
**----- End of picture text -----**
6/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Electrical characteristics** **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** **==> picture [463 x 176] intentionally omitted <==** **----- Start of picture text -----**
VGS AM04980v1 C AM04981v1
(V) (pF)
VDD=15V
12 6100
ID=26A
10 5100
Ciss
8 4100
6 3100
4 2100
2 1100 Coss
Crss
0 100
0 20 40 60 80 100 Qg(nC) 0 5 10 15 20 25 VDS(V)
**----- End of picture text -----**
**Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature** **==> picture [463 x 176] intentionally omitted <==** **----- Start of picture text -----**
VGS(th) AM04982v1 RDS(on) AM04983v1
(norm) (norm)
1.6
1.2
1.4
1.0
1.2
0.8
1.0
0.6 0.8
0.6
0.4
0.4
0.2 0.2
0 0
-50 -25 0 25 50 75 100 125 150 TJ(°C) -50 -25 0 25 50 75 100 125 150 TJ(°C)
**----- End of picture text -----**
## **Figure 12. Source-drain diode forward characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VSD AM04984v1
(V)
1.0
TJ=-50°C
0.9
TJ=25°C
0.8
0.7
0.6
0.5
TJ=150°C
0.4
0 20 40 60 80 ISD(A)
**----- End of picture text -----**
7/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Test circuits** ## **3 Test circuits** **Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load** **==> picture [463 x 162] intentionally omitted <==** **----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. µF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit** **==> picture [463 x 162] intentionally omitted <==** **----- Start of picture text -----**
L
A A A
D
G D.U.T. FASTDIODE L=100µH VD 2200 3.3
S B 3.3 1000 µF µF VDD
25 Ω B B D µF µF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
**----- End of picture text -----**
## **Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform** **==> picture [463 x 162] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
**----- End of picture text -----**
8/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Test circuits** ## **Figure 19. Gate charge waveform** **==> picture [188 x 150] intentionally omitted <==** **----- Start of picture text -----**
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
**----- End of picture text -----**
9/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[® ] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Package mechanical data** **Table 9. SO-8 mechanical data** |**Dim.**|**mm**|**mm**|**mm**| |---|---|---|---| ||**Min.**|**Typ.**|**Max.**| |A|||1.75| |A1|0.10||0.25| |A2|1.25||| |b|0.28||0.48| |c|0.17||0.23| |D|4.80|4.90|5.00| |E|5.80|6.00|6.20| |E1|3.80|3.90|4.00| |e||1.27|| |h|0.25||0.50| |L|0.40||1.27| |L1||1.04|| |k|0°||8°| |ccc|||0.10| 11/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Package mechanical data** ## **Figure 20. SO-8 drawing** **==> picture [319 x 101] intentionally omitted <==** **==> picture [75 x 113] intentionally omitted <==** **==> picture [186 x 116] intentionally omitted <==** 0016023_Rev_E 12/14 Doc ID 019030 Rev 2 **STS26N3LLH6** **Revision history** ## **5 Revision history** **Table 10.** **Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |08-Jul-2011|1|First release.| |19-Oct-2011|2|Document status promoted from preliminary data to datasheet.| 13/14 Doc ID 019030 Rev 2 **STS26N3LLH6** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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