# Dual MOSFET, N Channel, 450 V, 450 V, 400 mA, 400 mA, 4.1 ohm

![Product image](https://novapart.co/image/farnell:2807226/)

**URL**: https://novapart.co/products/STS1DNC45/dual-mosfet-n-channel-450-v-400-ma-41-ohm
**SKU**: STS1DNC45
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.3860
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:450V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | SuperMESH Series |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 1.6W |
| Power Dissipation P Channel | 1.6W |
| Drain Source Voltage Vds N Channel | 450V |
| Drain Source Voltage Vds P Channel | 450V |
| Continuous Drain Current Id N Channel | 400mA |
| Continuous Drain Current Id P Channel | 400mA |
| Drain Source On State Resistance N Channel | 4.1ohm |
| Drain Source On State Resistance P Channel | 4.1ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807226/)

**==> picture [63 x 41] intentionally omitted <==**

## **STS1DNC45** DUAL N-CHANNEL 450V - 4.1Ω - 0.4A SO-8 Su erMESH™POWER MOSFET p 

||||S|
|---|---|---|---|
|**TYPE**|**VDSS**|**RDS(on)**|**ID**|
|STS1DNC45|450 V|< 4.5Ω|0.4 A|



- I TYPICAL RDS(on) = 4.1Ω 

- I STANDARD OUTLINE FOR EASY 

   - AUTOMATED SURFACE MOUNT ASSEMBLY 

**==> picture [51 x 44] intentionally omitted <==**

- I GATE CHARGE MINIMIZED 

## **DESCRIPTION** 

The SuperMESH™series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™products. 

## **APPLICATIONS** 

## I SWITCH MODE LOW POWER SUPPLIES 

   - (SMPS) 

- I DC-DC CONVERTERS 

**SO-8** 

## **INTERNAL SCHEMATIC DIAGRAM** 

**==> picture [102 x 102] intentionally omitted <==**

- I LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) 

- I LOW POWER BATTERY CHARGERS 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE**|**MAXIMUM RATINGS**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source Voltage (VGS= 0)|450|V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|450|V|
|VGS|Gate- source Voltage|± 30|V|
|ID|Drain Current (continuous) at TC= 25°C<br>Drain Current (continuous) at TC= 100°C|0.40<br>0.25|A<br>A|
|IDM(�)|Drain Current (pulsed)|1.6|A|
|PTOT|Total Dissipation at TC= 25°C Dual Operation<br>Total Dissipation at TC= 25°C Single Operation|1.6<br>2|W<br>W|
|dv/dt(1)|Peak Diode Recovery voltage slope|3|V/ns|



(G) Pulse width limited by safe operating area 

(1)ISD ≤ 0.4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 

June 2003 

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## **STS1DNC45** 

## **THERMAL DATA** 

|Rthj-amb(#)|Thermal Resistance Junction-ambient Max Single Operation<br>Thermal Resistance Junction-ambient Max Dual Operation|62.5<br>78|°C/W<br>°C/W|
|---|---|---|---|
|Tj<br>Tstg|Max. Operating Junction Temperature<br>Storage Temperature|150<br>–65 to 150|°C<br>°C|



(#) When Mounted on FR4 board (Steady State) 

## **AVALANCHE CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Max Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche Current, Repetitive or Not-Repetitive<br>(pulse width limited by Tjmax)|0.4|A|
|EAS|Single Pulse Avalanche Energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|30|mJ|



## **ELECTRICAL CHARACTERISTICS** (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF 

|<br>OFF|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID = 250 µA, VGS= 0|450|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating, TC= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 30V|||±100|nA|



## ON (1) 

|ON (1)|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250µA|2.3|3|3.7|V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10 V, ID= 0.5 A||4.1|4.5|Ω|



## DYNAMIC 

|DYNAMIC|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs(1)|Forward Transconductance|VDS= 25 V,ID= 0.5 A||1.1||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25 V, f = 1 MHz, VGS= 0||160<br>27.5<br>4.7||pF<br>pF<br>pF|



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**STS1DNC45** 

## **ELECTRICAL CHARACTERISTICS** (CONTINUED) SWITCHING ON 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr|Turn-on Delay Time<br>Rise Time|VDD= 225 V, ID= 0.5 A<br>RG= 4.7ΩVGS= 10 V<br>(see test circuit, Figure 3)||6.7<br>4||ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDD= 360 V, ID= 1.5 A,<br>VGS= 10 V||7<br>1.3<br>3.2|10|nC<br>nC<br>nC|



## SWITCHING OFF 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|tr(off)<br>tf<br>tc|Off-voltage Rise Time<br>Fall Time<br>Cross-over Time|VDD= 360 V, ID= 1.5 A<br>RG= 4.7Ω,VGS= 10 V<br>(see test circuit, Figure 5)||8.5<br>12<br>18||ns<br>ns<br>ns|



## SOURCE DRAIN DIODE 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM(2)|Source-drain Current<br>Source-drain Current (pulsed)||||0.4<br>1.6|A<br>A|
|VSD(1)|Forward On Voltage|ISD= 0.4 A, VGS= 0|||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD= 0.4 A, di/dt = 100A/µs<br>VDD= 100 V, Tj= 150°C<br>(see test circuit, Figure 5)|,|225<br>530<br>4.7||ns<br>nC<br>A|



Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

2. Pulse width limited by safe operating area. 

## **Safe Operating Area** 

**==> picture [196 x 196] intentionally omitted <==**

## **Thermal Impedance** 

**==> picture [196 x 196] intentionally omitted <==**

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**STS1DNC45** 

## **Output Characteristics** 

## **Transfer Characteristics** 

**==> picture [195 x 196] intentionally omitted <==**

**Transconductance** 

**Gate Charge vs Gate-source Voltage** 

## **Static Drain-source On Resistance** 

**Capacitance Variations** 

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**STS1DNC45** 

**Normalized Gate Threshold Voltage vs Temp.** 

**Source-drain Diode Forward Characteristics** 

**Max Id Current vs Tc** 

## **Normalized On Resistance vs Temperature** 

## **Normalized BVDSS vs Temperature** 

**Maximum Avalanche Energy vs Temperature** 

5/8 

**STS1DNC45** 

**Fig. 1:** Unclamped Inductive Load Test Circuit 

**==> picture [221 x 175] intentionally omitted <==**

**Fig. 3:** Switching Times Test Circuit For Resistive Load 

**==> picture [221 x 175] intentionally omitted <==**

**Fig. 2:** Unclamped Inductive Waveform 

**==> picture [221 x 175] intentionally omitted <==**

**Fig. 4:** Gate Charge test Circuit 

**==> picture [221 x 175] intentionally omitted <==**

**Fig. 5:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

**==> picture [221 x 174] intentionally omitted <==**

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**STS1DNC45** 

## **SO-8  MECHANICAL DATA** 

|**DIM.**|||||**mm**|**mm**|**mm**|**mm**||||||||**inch**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||**MIN.**|||**TYP.**|||||**MAX.**||**MIN.**||||**TYP.**|||**MAX.**|
|A||||||||||1.75|||||||||0.068|
|a1||0.1||||||||0.25||0.003|||||||0.009|
|a2||||||||||1.65|||||||||0.064|
|a3||0.65||||||||0.85||0.025|||||||0.033|
|b||0.35||||||||0.48||0.013|||||||0.018|
|b1||0.19||||||||0.25||0.007|||||||0.010|
|C||0.25||||||||0.5||0.010|||||||0.019|
|c1|||||||||||45(typ.)|||||||||
|D||4.8||||||||5.0||0.188|||||||0.196|
|E||5.8||||||||6.2||0.228|||||||0.244|
|e|||||1.27||||||||||0|.050||||
|e3|||||3.81||||||||||0|.150||||
|F||3.8||||||||4.0||0.14|||||||0.157|
|L||0.4||||||||1.27||0.015|||||||0.050|
|M||||||||||0.6|||||||||0.023|
|S|||||||||||8(max.)|||||||||
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**STS1DNC45** 

**Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.** 

**© The ST logo is a registered trademark of STMicroelectronics** 

**© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES** Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 

**© http://www.st.com** 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/sts1dnc45/mosfet-dual-n-ch-450v-0-4a-soic/dp/2807226)
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