# Power MOSFET, P Channel, 30 V, 12.5 A, 0.01 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3367077/)

**URL**: https://novapart.co/products/STS10P3LLH6/power-mosfet-p-channel-30-v-125-a-001-ohm-soic
**SKU**: STS10P3LLH6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5420
**Stock**: 50+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | STripFET H6 |
| Qualification | - |
| Power Dissipation | 2.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12.5A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367077/)

## **STS10P3LLH6** 

P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET™ H6 Power MOSFET in an SO-8 package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max**|**ID**|
|---|---|---|---|
|STS10P3LLH6|-30 V|0.012 Ω|-12.5 A|



- Very low on-resistance 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

**Figure 1: Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

**Table 1: Device summary Order code Marking Packages Packing** STS10P3LLH6 10K3L SO-8 Tape and reel 

_www.st.com_ 

April 2017 This is information on a product in full production. 

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|**Contents**<br>**STS10P3LLH6**|**Contents**<br>**STS10P3LLH6**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1<br>SO-8 package information .............................................................. 10|
||4.2<br>SO-8 packing information ................................................................ 12|
|**5**|**Revision history ............................................................................ 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|-30|V|
|VGS|Gate- source voltage|±20|V|
|ID|Drain current (continuous) at Tamb= 25 °C|-12.5|A|
||Drain current (continuous) at Tamb= 100 °C|-7.8||
|IDM_(1)_|Drain current (pulsed)|-50|A|
|PTOT|Total dissipation at Tamb= 25 °C|2.7|W|
|EAS|Singlepulse avalanche energy(startingTJ= 25 °C, ID= -5A)|70|mJ|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||



## **Notes:** 

- (1)Pulse width limited by safe operating area 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-amb_(1)_|Thermal resistancejunction-amb|47|°C/W|



**Notes:** 

- (1)When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 4: On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= -250 µA|-30|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= -30 V|||-1|µA|
|||VDS= -30 V,<br>TC= 125 °C_(1)_|||-10|µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ±20 V|||-100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= -250µA|-1|-1.7|-2.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= -10 V, ID= -5 A||0.01|0.012|Ω|
|||VGS= -4.5 V, ID= -5 A||0.014|0.017|Ω|



## **Notes:** 

(1)Defined by design, not subject to production test. 

**Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= -25 V, f = 1 MHz,<br>VGS= 0 V|-|3350|-|pF|
|Coss|Output capacitance||-|414|-|pF|
|Crss|Reverse transfer capacitance||-|287|-|pF|
|Qg|Totalgate charge|VDD= -15 V  ID= -10 A<br>VGS= -4.5 V<br>(see_Figure 14: "Gate_<br>_charge test circuit"_)|-|33|-|nC|
|Qgs|Gate-source charge||-|14|-|nC|
|Qgd|Gate-drain charge||-|11|-|nC|



**Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= -15 V, ID= -5 A<br>RG= 4.7 Ω, VGS= -10 V<br>(see_Figure 13:_<br>_"Switching times test_<br>_circuit for resistive load"_)|-<br>-<br>-<br>-|12.8|-|ns|
|tr|Rise time|||112|-|ns|
|td(off)|Turn-off delaytime|||61|-|ns|
|tf|Fall time|||45|-|ns|



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**Electrical characteristics** 

## **Table 7: Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD_(1)_|Forward on voltage|ISD= -5 A, VGS= 0 V|-||-1.1|V|
|trr|Reverse recoverytime|ISD= -5 A, di/dt = 100<br>A/µs<br>VDD= -24 V, Tj= 150 °C<br>(see_Figure 15: "Source-_<br>_drain diode forward_<br>_characteristics"_)|-|25.2||ns|
|Qrr|Reverse recoverycharge||-|17.4||nC|
|IRRM|Reverse recovery current||-|-1.4||A|



## **Notes:** 

(1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

For the P-channel Power MOSFET, current and voltage polarities are reversed 

**Figure 2: Safe operating area** 

**==> picture [128 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3: Thermal impedance<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics** 

**Figure 5: Transfer characteristics** 

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**Electrical characteristics** 

**Figure 6: Gate charge vs gate-source voltage** 

**==> picture [183 x 166] intentionally omitted <==**

**Figure 8: Capacitance variations** 

**==> picture [192 x 165] intentionally omitted <==**

**Figure 10: Normalized on-resistance vs temperature** 

**==> picture [191 x 165] intentionally omitted <==**

**Figure 7: Static drain-source on-resistance** 

**==> picture [179 x 163] intentionally omitted <==**

**Figure 9: Normalized gate threshold voltage vs temperature** 

**==> picture [192 x 165] intentionally omitted <==**

**Figure 11: Normalized V(BR)DSS vs temperature** 

**==> picture [198 x 165] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 12: Source-drain diode forward characteristics** 

For the P-channel Power MOSFET, current and voltage polarities are reversed 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [401 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Switching times test circuit for<br>Figure 14: Gate charge test circuit<br>resistive load<br>**----- End of picture text -----**<br>


**Figure 15: Source-drain diode forward characteristics** 

**==> picture [160 x 93] intentionally omitted <==**

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 SO-8 package information** 

**Figure 16: SO-8 package outline** 

**==> picture [409 x 391] intentionally omitted <==**

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**Package information** 

## **Table 8: SO-8 mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|||1.75|
|A1|0.10||0.25|
|A2|1.25|||
|b|0.31||0.51|
|b1|0.28||0.48|
|c|0.10||0.25|
|c1|0.10||0.23|
|D|4.80|4.90|5.00|
|E|5.80|6.00|6.20|
|E1|3.80|3.90|4.00|
|e||1.27||
|h|0.25||0.50|
|L|0.40||1.27|
|L1||1.04||
|L2||0.25||
|k|0°||8°|
|ccc|||0.10|



**Figure 17: SO-8 recommended footprint (dimensions are in mm)** 

**==> picture [409 x 204] intentionally omitted <==**

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**Package information** 

## **4.2 SO-8 packing information** 

**Figure 18: SO-8 tape and reel dimensions** 

**==> picture [408 x 278] intentionally omitted <==**

**Table 9: SO-8 tape and reel mechanical data** 

|Dim.||mm||
|---|---|---|---|
||Min.|Typ.|Max.|
|A||-|330|
|C|12.8||13.2|
|D|20.2|||
|N|60|||
|T|||22.4|
|Ao|8.1||8.5|
|Bo|5.5||5.9|
|Ko|2.1||2.3|
|Po|3.9||4.1|
|P|7.9||8.1|



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**Revision history** 

## **5 Revision history** 

**Table 10: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|06-May-2014|1|Initial release.|
|24-Sep-2014|2|Updated the title, the features and the description in cover page.<br>Updated Section 1: "Electrical ratings", Section 2: "Electrical<br>characteristics".<br>Added Section 2.1: "Electrical characteristics (curves)"<br>Minor text changes.|
|11-Jun-2015|3|Text and formatting changes throughout document.<br>On cover page:<br>- updated title description and Features table<br>In Section 1 Electrical ratings:<br>- updated Table Absolute maximum ratings<br>In section 2.1 Electrical characteristics (curves)<br>- updated Figure Safe operating area<br>Updated and renamed Section 4.1 SO-8 package information (was<br>SO-8 mechanical data)|
|24-Aug-2015|4|Updated Table 4: "On/off states".|
|06-Dec-2016|5|Updated VGS(th)in Table 4: "On/off states".<br>Minor text changes.|
|03-Apr-2017|6|Added EASvalue in_Table 2: "Absolute maximum ratings"_.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/sts10p3llh6/mosfet-p-ch-30v-12-5a-150deg-c/dp/3367077)
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