# Power MOSFET, N Channel, 600 V, 400 mA, 8 ohm, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:1752178/)

**URL**: https://novapart.co/products/STQ1HNK60R-AP/power-mosfet-n-channel-600-v-400-ma-8-ohm-to-92
**SKU**: STQ1HNK60R-AP
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2010
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-92 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 400mA |
| Drain Source On State Resistance | 8ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752178/)

## **STN1HNK60, STQ1HNK60R-AP** 

Datasheet 

N-channel 600 V, 7.3 Ω typ., 0.4 A SuperMESH™ Power MOSFETs in a SOT-223 and TO-92 packages 

**==> picture [100 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>1  [23]<br>SOT-223<br>e<br>3<br>2<br>B® 1<br>TO-92 (Ammopack)<br>D(2, 4)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


Int_schem_nTnZ_SOT_223 

## **Features** 

|**Order code**<br>~~rr~~|**VDS**<br>~~ee~~|**RDS(on) max.**<br>~~ee~~|**ID**<br>~~ee~~|**Package**|
|---|---|---|---|---|
|STN1HNK60<br>~~rr ~~|600 V<br> ~~ee ~~|8.5 Ω<br> ~~ee ~~|0.4 A<br> ~~ee~~|SOT-223|
|STQ1HNK60R-AP||||TO-92|



- 100% avalanche tested 

- Gate charge minimized 

## **Applications** 

- Switching applications 

## **Description** 

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. 

## **Product status** ~~EEE~~ 

**Product status** STN1HNK60 STQ1HNK60R-AP 

**DS12594** - **Rev 1** - **August 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STN1HNK60, STQ1HNK60R-AP Electrical ratings** 

**1** 

## **Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**SOT-223**|**TO-92**|**n**|
|VDS|Drain-source voltage|600||V|
|VDGR|Drain-gate voltage (RGS= 20 kΩ)|600||V|
|VGS|Gate- source voltage|±30||V|
|ID|Drain current (continuous) at TC= 25 °C|0.4||A|
|ID|Drain current (continuous) at TC= 100 °C|0.25||A|
|IDM (1)|Drain current (pulsed)|1.6||A|
|PTOT|Total dissipation at TC= 25 °C|3.3|3|W|
|dv/dt(2)|Peak diode recovery voltage slope|3||V/ns|
|Tj|Operating junction temperature range|-55 to 150||°C|
|Tstg|Storage temperature range||||



_1. Pulse width limited by safe operating area._ 

_2. ISD ≤ 0.4 A, di/dt ≤ 100 A/μs, VDD ≤ V(BR)DSS._ 

## **Table 2. Thermal data** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**SOT-223**|**TO-92**|**n**|
|Rthj-amb|Thermal resistance junction-ambient||120|°C/W|
|Rthj-lead|Thermal resistance junction-lead||40|°C/W|
|Rthj-pcb (1)|Thermal resistance junction-pcb|37.87||°C/W|



_1. When mounted on FR-4 board of 1 in[2] , 2 oz Cu, t < 10 s._ 

**Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive (pulse width limited by TjMax)|0.4|A|
|EAS|Single pulse avalanche energy (starting Tj= 25 °C, ID= IAR, VDD= 50 V)|25|mJ|



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**STN1HNK60, STQ1HNK60R-AP Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0 V|600|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V, TC= 125 °C(1)|||50|µA|
|IGSS|Gate body leakage<br>current|VDS= 0 V, VGS= ±30 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2.25|3|3.7|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 0.5 A||7.3|8.5|Ω|



_1. Defined by design, not subject to production test._ 

## **Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0 V|-|156||pF|
|Coss|Output capacitance|||23.5|||
|Crss|Reverse transfer<br>capacitance|||3.8|||
|Qg|Total gate charge|VDD= 480 V, ID= 1 A, VGS= 0 to 10 V<br>(seeFigure 16. Test circuit for gate charge<br>behavior)|-|7|10|nC|
|Qgs|Gate-source charge|||1.1|||
|Qgd|Gate-drain charge|||3.7|||



## **Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 0.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 15. Test circuit for resistive load<br>switching timesandFigure 20. Switching<br>time waveform)|-|6.5|-|ns|
|tr|Rise time|||5|||
|td(off)|Turn-off delay time|||19|||
|tr|Fall time|||25|||



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**STN1HNK60, STQ1HNK60R-AP Electrical characteristics** 

## **Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||0.4|A|
|ISDM (1)|Source-drain current<br>(pulsed)||||1.6||
|VSD (2)|Forward on voltage|ISD= 0.4 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recovery time|ISD= 1.0 A, di/dt = 100 A/µs<br>VDD= 25 V (seeFigure 17. Test circuit for<br>inductive load switching and diode recovery<br>times)|-|140||ns|
|Qrr|Reverse recovery charge|||240||nC|
|IRRM|Reverse recovery current|||3.3||A|
|trr|Reverse recovery time|ISD= 1.0 A, di/dt = 100 A/µs<br>VDD= 25 V, TJ= 150 °C (seeFigure<br>17. Test circuit for inductive load switching<br>and diode recovery times)|-|229||ns|
|Qrr|Reverse recovery charge|||377||nC|
|IRRM|Reverse recovery current|||3.3||A|



_1. Pulse width limited by safe operating area._ 

_2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%._ 

**DS12594** - **Rev 1** 

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**STN1HNK60, STQ1HNK60R-AP Electrical characteristics curves** 

## **2.1 Electrical characteristics curves** 

**Figure 1. Safe operating area for SOT-223** 

**==> picture [178 x 149] intentionally omitted <==**

**Figure 3. Safe operating area for TO-92** 

**==> picture [177 x 149] intentionally omitted <==**

**Figure 5. Output characterisics** 

**==> picture [148 x 147] intentionally omitted <==**

**Figure 2. Thermal impedance for SOT-223** 

**==> picture [155 x 157] intentionally omitted <==**

**Figure 4. Thermal impedance for TO-92** 

**==> picture [145 x 141] intentionally omitted <==**

**Figure 6. Transfer characteristics** 

**==> picture [148 x 148] intentionally omitted <==**

**DS12594** - **Rev 1** 

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**STN1HNK60, STQ1HNK60R-AP Electrical characteristics curves** 

**Figure 7. Gate charge vs gate-source voltage** 

**==> picture [161 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS=480V<br>ID=1A<br>**----- End of picture text -----**<br>


**Figure 9. Static drain-source on-resistance** 

**==> picture [166 x 166] intentionally omitted <==**

**Figure 11. Normalized on-resistance vs temperature** 

**==> picture [164 x 163] intentionally omitted <==**

**Figure 8. Capacitance variations** 

**==> picture [164 x 163] intentionally omitted <==**

**Figure 10. Normalized gate thereshold voltage vs temperature** 

**==> picture [166 x 166] intentionally omitted <==**

**Figure 12. Source-drain forward characteristics** 

**==> picture [166 x 165] intentionally omitted <==**

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**STN1HNK60, STQ1HNK60R-AP Electrical characteristics curves** 

**Figure 13. Normalized V(BR)DSS vs Temperature** 

**==> picture [165 x 165] intentionally omitted <==**

**Figure 14. Maximum avalanche energy vs temperature** 

0.4 

**DS12594** - **Rev 1** 

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**STN1HNK60, STQ1HNK60R-AP Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. Test circuit for inductive load switching and<br>Figure 18. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20. Switching time waveform<br>Figure 19. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


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**STN1HNK60, STQ1HNK60R-AP Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

## **4.1 SOT-223 package information** 

**Figure 21. SOT-223 package outline** 

**==> picture [67 x 45] intentionally omitted <==**

0046067_14 

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**STN1HNK60, STQ1HNK60R-AP SOT-223 package information** 

**Table 8. SOT-223 package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|||1.8|
|A1|0.02||0.1|
|B|0.6|0.7|0.85|
|B1|2.9|3|3.15|
|c|0.24|0.26|0.35|
|D|6.3|6.5|6.7|
|e||2.3||
|e1||4.6||
|E|3.3|3.5|3.7|
|H|6.7|7.0|7.3|
|V|||10º|



**Figure 22. SOT-223 recommended footprint (dimensions are in mm)** 

**==> picture [24 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
0046067<br>**----- End of picture text -----**<br>


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**STN1HNK60, STQ1HNK60R-AP TO-92 Ammopack package information** 

## **4.2 TO-92 Ammopack package information** 

**==> picture [193 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. TO-92 Ammopack package outline<br>**----- End of picture text -----**<br>


**==> picture [373 x 224] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>os<br>A1 T2 T1<br>H1 . delta H<br>H Pty H3<br>H0<br>d<br>L W2<br>l1<br>W<br>prrediindhxi W0 i<br>W1<br>F1 F2<br>isha |<br>F3<br>D0<br>t<br>P2<br>P0<br>anes +<br>**----- End of picture text -----**<br>


0050910_Rev_22 

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**STN1HNK60, STQ1HNK60R-AP TO-92 Ammopack package information** 

## **Table 9. TO-92 Ammopack mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A1|||4.80|
|T|||3.80|
|T1|||1.60|
|T2|||2.30|
|d|0.45|0.47|0.48|
|P0|12.50|12.70|12.90|
|P2|5.65|6.35|7.05|
|F1, F2|2.40|2.50|2.94|
|F3|4.98|5.08|5.48|
|delta H|-2.00||2.00|
|W|17.50|18.00|19.00|
|W0|5.50|6.00|6.50|
|W1|8.50|9.00|9.25|
|W2|||0.50|
|H||18.50|21.00|
|H0|15.50|16.00|18.20|
|H1||25.00|27.00|
|H3|0.50|1.00|2.00|
|D0|3.80|4.00|4.20|
|t|||0.90|
|L|||11.00|
|I1|3.00|||
|delta P|-1.00||1.00|



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**STN1HNK60, STQ1HNK60R-AP Ordering information** 

## **5 Ordering information** 

## **Table 10. Order codes** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STN1HNK60|N1HNK60|SOT-223|Tape and reel|
|STQ1HNK60R-AP|1HNK60R|TO-92|Ammopak|



**DS12594** - **Rev 1** 

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**STN1HNK60, STQ1HNK60R-AP** 

## **Revision history** 

## **Table 11. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|20-Aug-2018|1|Initial release.|



**DS12594** - **Rev 1** 

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**STN1HNK60, STQ1HNK60R-AP Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
||**4.1**<br>SOT-223 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.2**<br>TO-92 Ammopack package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
|**5**|**Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13**|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14**||



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**STN1HNK60, STQ1HNK60R-AP** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS12594** - **Rev 1** 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stq1hnk60r-ap/mosfet-n-ch-600v-0-4a-to92/dp/1752178)
---

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