# AUTOMOTIVE-GRADE POWER MOSFET

**URL**: https://novapart.co/products/STPST80H100L2Y/automotive-grade-power-mosfet
**SKU**: STPST80H100L2Y
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €2.1400
**Stock**: 10+
**Lead Time**: 701 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4716004/)

**STPST80H100-Y** 

Datasheet 

**==> picture [135 x 36] intentionally omitted <==**

Automotive 100 V, 80 A power Schottky trench diode 

**==> picture [77 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
K<br>A A [A A A]<br>NC<br>NC<br>K<br>HU [3] PAK<br>A<br>A<br>A<br>A<br>A<br>**----- End of picture text -----**<br>


## **Features** 

- AEC-Q101 qualified 

- PPAP capable 

- None or negligible reverse recovery 

- VRRM guaranteed from -40 °C up to 175 °C 

- High junction temperature capability 

- Low forward voltage drop 

- Reduces conduction, reverse and switching losses 

## **Product label** 

**==> picture [55 x 58] intentionally omitted <==**

- 100% Avalanche tested in production 

- SMD with top side cooling package (HU[3] PAK) 

- ECOPACK2 compliant 

## **Applications** 

- DC/DC converter 

- Freewheeling function 

- LLC topology 

- Electrical vehicles (EV) and hybrid electrical (HEV) vehicles 

## **Description** 

**Product status** STPST80H100-Y 

|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|80 A|
|**VRRM**|100 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|0.66 V|



This 80 A, 100 V rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface, optimizing the efficiency of the power converters. 

It has been designed for high frequency switched-mode power supply applications for DC/DC converters used in electrical cars. 

Packaged in HU[3] PAK, this 80 A, 100 V trench diode provides a high level of performance in a flat and topside cooling package. 

**DS14555** - **Rev 2** - **October 2024** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPST80H100-Y Characteristics** 

**1 Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -40°C to + 175°C)||100|V|
|IF(RMS)|Forward RMS current||93|A|
|IF(AV)|Average forward current|Tc= 155 °C, δ = 0.8 square wave|80|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|900|A|
|IAS|Single pulse avalanche current(1)|Tj= 25°C, L = 300 µH, VDD= 15 V|16|A|
|Tstg|Storage temperature range||-65 to +175|°C|
|Tj|Operating junction temperature range(2)||-40 to +175|°C|



_1. Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform._ 

_2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink._ 

**Table 2. Thermal resistance parameter** 

|**Symbol**|**Parameter**|**Typ.**<br>**value**|**Unit**|
|---|---|---|---|
|Rth(j-c)|Junction to case|0.20|°C/W|



For more information you can refer to: 

- TN1378: HU[3] PAK package mounting and thermal behavior. 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR(1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-||100|µA|
|||Tj= 125 °C||-|25|65|mA|
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 40 A|-||0.650|V|
|||Tj= 125 °C||-|0.535|0.590||
|||Tj= 25 °C|IF= 80 A|-||0.810||
|||Tj= 125 °C||-|0.660|0.710||



_1. Pulse test: tp = 5 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: 

P = 0.47 x IF(AV) + 0.003 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses : 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses on a power diode 

**DS14555** - **Rev 2** 

**page 2/10** 

**STPST80H100-Y Characteristics** 

**Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test)** 

**==> picture [218 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
i(t), v(t)<br>VCL_DUT<br>IAS OG<br>IL IDUT<br>7Yo<br>t<br><_“>><br>tp<br>**----- End of picture text -----**<br>


**Figure 2. Unclamped inductive switching test circuit** 

**==> picture [210 x 50] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 VCLDUT 1<br>EAS = 2 [× L × I][AS][² ×] VCLDUT −VDD ≅ 2 [× L × I][AS][²]<br>L × IAS<br>tp = VCLDUT −VDD<br>**----- End of picture text -----**<br>


**Figure 3. Thermal transient impedance model circuit of the diode – Zth(j-c)** 

**Table 4. Components typical values of the diode thermal transient impedance model Zth(j-c)** 

|**Ref.**|**Value (mK/W)**|**Ref.**|**Value (mJ/K)**|
|---|---|---|---|
|Rth1|5.07|Cth1|2.06|
|Rth2|24.79|Cth2|2.91|
|Rth3|80.63|Cth3|4.7|
|Rth4|71.13|Cth4|11.05|
|Rth5|18.59|Cth5|201.31|



**DS14555** - **Rev 2** 

**page 3/10** 

**STPST80H100-Y Characteristics** 

## **1.1 Characteristics (curves)** 

**Figure 4. Average forward current versus case Figure 5. Relative variation of thermal impedance junction temperature (δ = 0.8) to case versus pulse duration** 

**==> picture [476 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 IF(AV)(A) 1.0 Zth(j-c)/Rth(j-c)<br>0.9<br>80 4{{{ti ttt) 0.8 aEEE ae<br>Ff dio 0.7 A a Aael<br>60 PTT {| 0.6 a a ee<br>rt ft]TTft tteryi  yeyi i yt yh] 0.5 eea A<br>40 rT tt ttt t ETE EL A 0.4 Lta TT eZ<br>rt? ] tte Tt ELT LEELA 0.3 Lota  TT ee<br>20 T Pr] | tpt typ 0.2 LTa TT ET eeETT<br>rt i | fi | ft cy 0.1 a Single pulse ee<br>spre Tc(°C) Pe ce tp(s)<br>0 Pitt tet ty 0.0 EH TE EEE HE El<br>0 25 50 75 100 125 150 175 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1<br>**----- End of picture text -----**<br>


**Figure 6. Reverse leakage current versus reverse voltage Figure 7. Junction capacitance versus reverse voltage applied (typical values) applied (typical values)** 

**==> picture [480 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.E+5 IR(µA) 100.0 Cj (nF)<br>Tj=150 °C F=1 MHz<br>VOSC=30 mVRMS<br>a Tj=125 °C | pT TE Tj=25 °C<br>1.E+4<br>SSee850222 Tj=100 °C =e i<br>10.0<br>SS ee<br>1.E+3<br>Tj=75 °C<br>1.E+2 === See Tj=50 °C |_\— | FSNX<br>SSS SSS 1.0 | Sl<br>1.E+1 Tj=25 °C<br>ppp——— p ee HEEa<br>1.E+0 0 MOO 10 20 EE 30 EEE 40 50 60 70 reret 80 90 . VR(V) 4 100 0.1 0.1 |__|ee 1.0 |_| 10.0 |_| VR(V100.0)<br>**----- End of picture text -----**<br>


**Figure 8. Forward voltage drop versus forward current (typical values)** 

**==> picture [225 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(A)<br>1000.0<br>Poop===——===—==——=——=—===<br>[ [ | ft ty tt tp pe tp pe<br>100.0 atee<br>pe<br>a GC 6 2 oP<br>Tj=25°C<br>10.0 Co e Tj=75°C ee<br>Tj=125°C Tj=-40°C<br>Tj=150°C<br>1.0 SP IA ==> >>> P a=============| et ttEES<br>a a A A GG kG CG<br>a a 9 a<br>0.1 COTTE VF(V)<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>**----- End of picture text -----**<br>


**DS14555** - **Rev 2** 

**page 4/10** 

**STPST80H100-Y Package information** 

**2 Package information** 

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1** 

## **HU[3] PAK package information** 

- Epoxy meets UL94, V0 

**Figure 9. HU[3] PAK package outline** 

_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ 

**DS14555** - **Rev 2** 

**page 5/10** 

**STPST80H100-Y Package information** 

**Table 5. HU[3] PAK package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|
|**Ref.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|3.40|3.50|3.60|
|A1||0.05||
|b|0.50|0.60|0.70|
|b2|0.50|0.70|1.00|
|b3|0.80|0.90|1.00|
|c|0.40|0.50|0.60|
|c2|0.40|0.50|0.60|
|D|11.70|11.80|11.90|
|D1|8.80|8.955|9.10|
|E|13.90|14.00|14.10|
|E1|12.30|12.40|12.50|
|E2|7.75|7.80|7.85|
|e|BSC 1.27|||
|H|18.00|18.58|19.00|
|L|2.40|2.52|2.60|
|L1||3.05||
|L2|0.90|1.00|1.10|
|L3|BSC 0.26|||
|L4|0.075|0.125|0.175|
|L5|1.83|1.93|2.03|
|L6|2.14|2.24|2.34|
|L7|4.44|4.54|4.64|
|aaa||0.10||
|F1|2.90|3.00|3.10|
|F2|2.40|2.50|2.60|
|F3|0.25|0.35|0.45|
|N1|3.80|3.90|4.00|
|N2|0.25|0.30|0.45|
|N3|0.80|0.90|1.00|
|T|0.50|0.67|0.70|
|T2|9.18|9.38|9.43|
|θ1||0°|8°|
|θ2||0°|8°|



1. Package outline exclusive of any mold flashes dimensions. 

2. Package outline exclusive of burr dimensions. 

3. Max resin gate protrusion: 0.25 mm. 

4. The planarity of the package backside 50 micron max. 

5. BSC: basic spacing between centers 

**DS14555** - **Rev 2** 

**page 6/10** 

**STPST80H100-Y Package information** 

**Figure 10. HU[3] PAK recommended footprint (dimensions are in mm)** 

**==> picture [224 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.00 1.50<br>19.00<br>2.<br>4<br>6 X 1.2 5<br>7<br>14.70<br>7 X 0.90<br>**----- End of picture text -----**<br>


_Note: For packing details you can see technical note TN1173: Packing information for IPAD, protection, rectifiers, thyristors and AC Switches._ 

**DS14555** - **Rev 2** 

**page 7/10** 

**STPST80H100-Y Ordering information** 

## **3 Ordering information** 

## **Table 6. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPST80H100L2Y|PST80H100L2Y|HU3PAK|2.32 g|600|Tape and reel|



**DS14555** - **Rev 2** 

**page 8/10** 

**STPST80H100-Y** 

## **Revision history** 

## **Table 7. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|26-Aug-2024|1|Initial release.|
|18-Oct-2024|2|Removed_HU3PAK packing information_(refer to TN1173). Minor text changes.|



**DS14555** - **Rev 2** 

**page 9/10** 

**STPST80H100-Y** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2024 STMicroelectronics – All rights reserved 

**DS14555** - **Rev 2** 

**page 10/10** 



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