# Silicon Carbide Schottky Diode, Single, 650 V, 8 A, 23.5 nC, D2PAK HV

![Product image](https://novapart.co/image/farnell:3105988RL/)

**URL**: https://novapart.co/products/STPSC8H065G2Y-TR/silicon-carbide-schottky-diode-single-650-v-8-a
**SKU**: STPSC8H065G2Y-TR
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.2900
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:8A; Total Capacitive Ch; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | D2PAK HV |
| Diode Configuration | Single |
| Average Forward Current | 8A |
| Total Capacitive Charge | 23.5nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3105988RL/)

**STPSC8H065-Y** 

Datasheet 

Automotive 650 V, 8 A high surge silicon carbide power Schottky diode 

## **Features** 

**==> picture [122 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
A K<br>K<br>K<br>A<br>K A<br>¢ A @ NC<br>NC<br>D²PAK HV DPAK<br>**----- End of picture text -----**<br>


- AEC-Q101 qualified 

- No reverse recovery charge in application current range 

- Switching behavior independent of temperature 

- Recommended to PFC applications 

- PPAP capable 

- VRRM guaranteed from -40 to 175 °C 

- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) 

- ECOPACK[®] 2 compliant component 

**Product label** ~~I~~ 

## **Applications** 

- On board charger 

## **Description** 

## **Product status** ~~7~~ STPSC8H065-Y 

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Especially suited for use in PFC applications, the STPSC8H065-Y SiC diode will boost performance in hard switching conditions. 

|**Product summary**|**Product summary**|
|---|---|
|**Symbol**<br>~~L~~|**Value**<br>~~LL~~|
|**IF(AV)**|8 A|
|**VRRM**|650 V|
|**Tj(max.)**|175 °C|



**DS12495** - **Rev 3** - **December 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC8H065-Y Characteristics** 

**1** 

## **Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|Tj= -40 °C to + 175 °C|650|V|
|IF(RMS)|Forward rms current||22|A|
|IF(AV)|Average forward current|Tc= 145 °C(1), DC|8|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal, Tc= 25 °C<br>tp= 10 ms sinusoidal, Tc= 125 °C<br>tp= 10 µs square, Tc= 25 °C|75<br>69<br>420|A|
|IFRM|Repetitive peak forward current|Tc= 145 °C(1), Tj= 175 °C, δ = 0.1|33|A|
|Tstg|Storage temperature range||-55 to +175|°C|
|Tj|Operating junction temperature range||-40 to +175|°C|



_1. Value based on Rth(j-c) max._ 

**Table 2. Thermal resistance parameters** 

|**Symbol**|**Parameter**|**Typ. value**|**Max. value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case|1.3|1.6|°C/W|



**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR(1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|7|80|µA|
|||Tj= 150 °C||-|65|335||
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 8 A|-|1.45|1.65|V|
|||Tj= 150 °C||-|1.7|2.05||



_1. tp = 10 ms, δ < 2%_ 

_2. tp = 500 μs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: P = 0.972 x IF(AV) + 0.135 x IF[2] (RMS) 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Typ.**|**Unit**|
|---|---|---|---|---|
|Qcj(1)|Total capacitive charge|VR= 400 V|23.5|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|414|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|38||



_1._ 

VR _Most accurate value for the capacitive charge:_ Qcj VR =  ∫ Cj V dV 0 

**DS12495** - **Rev 3** 

**page 2/12** 

**STPSC8H065-Y Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**Figure 1. Forward voltage drop versus forward current (typical values, low level)** 

**==> picture [225 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(A)<br>16<br>Pulse test: t p  = 500 µs<br>14<br>12<br>Ta = 100  ° C<br>10 T a  = 150 °C<br>8 T a  = 175 °C<br>6 T a  = 25 °C<br>4<br>2<br>Ta = -40  ° C V F (V)<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br>


**Figure 2. Forward voltage drop versus forward current (typical values, high level)** 

**==> picture [224 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(A)<br>80<br>Pulse test: t p = 500 µs<br>70<br>60<br>50<br>Ta = 25 °C<br>40 T a  = 100 °C<br>30<br>Ta = 150 °C<br>20<br>10<br>Ta = 175 °C V F (V)<br>0<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0<br>**----- End of picture text -----**<br>


**==> picture [513 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Reverse leakage current versus reverse voltage<br>Figure 4. Peak forward current versus case temperature<br>applied (typical values)<br>IM(A)<br>IR(µA) 80 T<br>1.E+03 δ = 0.1<br>70<br>1.E+02 T j = 175 °C 60 δ [=tp/T] tp<br>50<br>1.E+01 Tj = 150 °C δ = 0.3<br>40<br>δ = 0.5<br>1.E+00 30<br>20<br>1.E-01 Tj = 25 °C 10 δ = 1 δ = 0.7<br>V R (V) T C (°C)<br>1.E-02 0<br>0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


**DS12495** - **Rev 3** 

**page 3/12** 

**STPSC8H065-Y Characteristics (curves)** 

**Figure 5. Junction capacitance versus reverse voltage Figure 6. Relative variation of thermal impedance junction applied (typical values) to case versus pulse duration** 

**==> picture [222 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 Cj(pF)<br>450400 V OSC  F T j === 30 mV 1 MHz 25 °C RMS<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>VR(V)<br>0<br>0.1 1.0 10.0 100.0 1000.0<br>**----- End of picture text -----**<br>


**==> picture [224 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth(j-c) /Rth(j-c)<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 Single pulse<br>t p(s)<br>0.0<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**==> picture [513 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Non-repetitive peak surge forward current Figure 8. Total capacitive charges versus reverse voltage<br>versus pulse duration (sinusoidal waveform) applied (typical values)<br>1.E+03 IFSM(A) 28 QCj(nC)<br>24<br>T a  = 25 °C<br>20<br>Ta = 125 °C 16<br>1.E+02<br>12<br>8<br>4<br>1.E+01 t p(s) 0 V R (V)<br>1.E-05 1.E-04 1.E-03 1.E-02 0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


**Figure 9. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 35 µm) (D²PAK-HV)** 

**==> picture [218 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 Rth(j-a) (°C/W)<br>D²PAK -HV<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>S Cu (cm²)<br>0<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br>


**DS12495** - **Rev 3** 

**page 4/12** 

**STPSC8H065-Y Package information** 

**2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

## **2.1 DPAK package information** 

- Epoxy meets UL94, V0 

- Lead-free packages 

**Figure 10. DPAK package outline** 

**==> picture [254 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>E<br>c2<br>b4<br>E1<br>L2<br>D1<br>D<br>H<br>L4<br>A1<br>b (2x)<br>e R<br>e1<br>c<br>Seating plane<br>A2<br>(L1)<br>L<br>V2<br>Gauge<br>0.25<br> plane<br>**----- End of picture text -----**<br>


**DS12495** - **Rev 3** 

**page 5/12** 

**STPSC8H065-Y DPAK package information** 

## **Table 5. DPAK mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Dim.**|**Millimeters**|||**Inches(1)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|0.087||0.094|
|A1|0.90||1.10|0.035||0.043|
|A2|0.03||0.23|0.001||0.009|
|b|0.64||0.90|0.025||0.035|
|b4|5.20||5.40|0.205||0.213|
|c|0.45||0.60|0.018||0.024|
|c2|0.48||0.60|0.019||0.024|
|D|6.00||6.20|0.236||0.244|
|D1|4.95|5.10|5.25|0.195|0.201|0.207|
|E|6.40||6.60|0.252||0.260|
|E1|4.60|4.70|4.80|0.181|0.185|0.189|
|e|2.159|2.286|2.413|0.085|0.090|0.095|
|e1|4.445|4.572|4.699|0.175|0.180|0.185|
|H|9.35||10.10|0.368||0.398|
|L|1.00||1.50|0.039||0.059|
|(L1)|2.60|2.80|3.00|0.102|0.110|0.118|
|L2|0.65|0.80|0.95|0.026|0.031|0.037|
|L4|0.60||1.00|0.024||0.039|
|R||0.20|||0.008||
|V2|0°||8°|0°||8°|



_1. Inches dimensions given for reference only_ 

**Figure 11. DPAK recommended footprint (dimensions are in mm)** 

**==> picture [160 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.3<br>10.7<br>6.1<br>B<br>1.5<br>4.572<br>A<br>The device must be positioned within<br>1.8 min.<br>2.8<br>**----- End of picture text -----**<br>


**DS12495** - **Rev 3** 

**page 6/12** 

**STPSC8H065-Y D²PAK high voltage package information** 

## **2.2 D²PAK HV package information** 

## **Figure 12. D²PAK high voltage package outline** 

**==> picture [256 x 360] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>H<br>C<br>L1<br>L<br>L4<br>L2<br>M<br>0.25 gauge plane<br>F (x2)<br>E<br>e<br>H1<br>L3<br>A1<br>V<br>R<br>R<br>**----- End of picture text -----**<br>


**DS12495** - **Rev 3** 

**page 7/12** 

**STPSC8H065-Y D²PAK high voltage package information** 

**Table 6. D²PAK high voltage package mechanical data** 

|**Rf**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|
|**e.**|**Min.**|**Typ.**|**Max.**|
|A|4.30||4.70|
|A1|0.03||0.20|
|C|1.17||1.37|
|e|4.98||5.18|
|E|0.50||0.90|
|F|0.78||0.85|
|H|10.00||10.40|
|H1|7.40||7.80|
|L|15.30||15.80|
|L1|1.27||1.40|
|L2|4.93||5.23|
|L3|6.85||7.25|
|L4|1.5||1.7|
|M|2.6||2.9|
|R|0.20||0.60|
|V|0°||8°|



**Figure 13. D²PAK High Voltage footprint in mm** 

**==> picture [162 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
10,58<br>7,46<br>15,95<br>5,10<br>3,40<br>1,20<br>5,08<br>**----- End of picture text -----**<br>


**DS12495** - **Rev 3** 

**page 8/12** 

**STPSC8H065-Y D²PAK high voltage package information** 

## **2.2.1 Creepage distance between anode and cathode** 

## **Table 7. Creepage distance between anode and cathode** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|CdA-K1|Minimum creepage distance between A and K1 (with top coating)|D²PAK HV|5.38|mm|
|CdA-K2|Minimum creepage distance between A and K2 (without top coating)||3.48||



_Note:_ 

_D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1)_ 

## **Figure 14. Creepage with top coating** 

## **Figure 15. Creepage without top coating** 

**DS12495** - **Rev 3** 

**page 9/12** 

**STPSC8H065-Y Ordering Information** 

## **3** 

## **Ordering Information** 

**Table 8. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC8H065BY-TR|PSC8H 065BY|DPAK|0.32 g|2500|Tape and reel|
|STPSC8H065G2Y-TR|PSC8H065G2Y|D²PAK HV|1.48 g|1000|Tape and reel|



**DS12495** - **Rev 3** 

**page 10/12** 

**STPSC8H065-Y** 

## **Revision history** 

**Table 9. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|08-Mar-2018|1|Initial release.|
|11-Sep-2018|2|Added D²PAK HV package.|
|06-Dec-2018|3|UpdatedSection 2.2.1 Creepage distance between anode and cathode.<br>Minor text changes to improve readability.<br>Updated title of document.|



**DS12495** - **Rev 3** 

**page 11/12** 

**STPSC8H065-Y** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS12495** - **Rev 3** 

**page 12/12** 



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