# Silicon Carbide Schottky Diode, Single, 650 V, 8 A, 26 nC, TO-220AC
**URL**: https://novapart.co/products/STPSC8G065D/silicon-carbide-schottky-diode-single-650-v-8-a-26
**SKU**: STPSC8G065D
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €0.7420
**Stock**: 200+
**Lead Time**: 177 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Average Forward Current | 8A |
| Total Capacitive Charge | 26nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4837847/)
**STPSC8G065**
Datasheet
**==> picture [62 x 34] intentionally omitted <==**
## 650 V, 8 A high surge silicon carbide power Schottky diode
**==> picture [89 x 121] intentionally omitted <==**
**----- Start of picture text -----**
A K
K
A
K
TO-220AC
**----- End of picture text -----**
## **Features**
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- Operating Tj from -55 °C to 175 °C
- ECOPACK2 compliant component
## **Applications**
- Solar inverter
- Air conditioning equipment
- UPS power supply
- Telecom / Server power equipment
- OBC (On board battery chargers)
## **Product label**
**==> picture [55 x 58] intentionally omitted <==**
## **Product status link**
STPSC8G065
- EV Charging station
## **Description**
The SiC diode STPSC8G065, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design.
|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|8 A|
|**VRRM**|650 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.30 V|
**DS15045** - **Rev 2** - **October 2025** For further information, contact your local STMicroelectronics sales office.
www.st.com
**STPSC8G065 Characteristics**
## **1 Characteristics**
**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)**
|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -55 °C to +175 °C)|||650|V|
|IF(RMS)|Forward rms current|||25|A|
|IF(AV)|Average forward current|Tc= 140 °C, δ = 1||8|A|
|IFRM|Repetitive peak forward current|Tc= 140 °C, Tj= 175 °C, δ = 0.1,
fsw> 10 kHz||34|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms
sinusoidal|Tc= 25 °C|60|A|
||||Tc= 150 °C|48||
|||tp= 10 µs square|Tc= 25 °C|540||
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Operating junction temperature range|||-55 to +175|°C|
**Table 2. Thermal resistance parameters**
|**Smbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|**y**||**Typ.**|**Max.**||
|Rth(j-c)|Junction to case|1.60|2.30|°C/W|
For more information, you can refer to the following application note:
- AN5088 : Rectifiers thermal management, handling and mounting recommendations
**Table 3. Static electrical characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|8|80|µA|
|||Tj= 175 °C||-|46|340||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 8 A|-|1.30|1.45|V|
|||Tj= 175 °C||-|1.49|1.70||
_1. Pulse test: tp = 10 ms, δ < 2%_
_2. Pulse test: tp = 380 µs, δ < 2%_
To evaluate the conduction losses, use the following equation:
P = 0.879 x IF(AV) + 0.103 x IF[2] (RMS)
For more information, you can refer to the following application notes related to the power losses:
- AN604: Calculation of conduction losses in a power rectifier
- AN4021: Calculation of reverse losses on a power diode
**DS15045** - **Rev 2**
**page 2/10**
**STPSC8G065 Characteristics**
**Table 4. Dynamic electrical characteristics**
|**Symbol**
~~a ~~|**Parameter**
~~a~~|**Test conditions**
~~es~~|**Min.**
~~es~~
ee|**Typ.**
~~es~~
ed|**Max.**
~~es~~|**Unit**
~~es~~|
|---|---|---|---|---|---|---|
|QCj (1)|Total capacitive charge|VR= 400 V|-
ee|26
ed|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|546|-|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|-|35|-||
**Figure 1. Thermal transient impedance model circuit of the diode – Zth(j-c)**
**Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)**
|**Ref.**
~~ee~~|**Value (K/W)**
~~ee~~|**Ref.**|**Value (J/K)**|
|---|---|---|---|
|Rth1
~~ee ~~|53.18 m
~~ee~~|Cth1|0.63 m|
|Rth2|735.55 m|Cth2|0.47 m|
|Rth3|446.71 m|Cth3|3.24 m|
|Rth4|281.87 m|Cth4|17.5 m|
|Rth5|81.66 m|Cth5|213 m|
**DS15045** - **Rev 2**
**page 3/10**
**STPSC8G065 Characteristics**
## **1.1 Characteristics (curves)**
**Figure 2. Forward voltage drop versus forward current (typical values)**
**==> picture [247 x 20] intentionally omitted <==**
**----- Start of picture text -----**
Figure 3. Reverse leakage current versus reverse voltage
applied (typical values)
**----- End of picture text -----**
**==> picture [481 x 152] intentionally omitted <==**
**----- Start of picture text -----**
16 IF(A) 1.E+2 IR(µA)
Pulse test : tp=380 µs
14 BEEEEE Ae =SSS
Ta=25 °C
12 HEE TTaa=150 °C=100 °C I){ /_, ff 1.E+1 e Tj=175 °C eaap aA
10 Ta=175 °C Tj=150 °C
Tj=100 °C
8 SSeSBe G e e een;6/7ae 1.E+0 |_| NN | NNee e e
Tj=25 °C
6 HERE AACY EEE == OS- = === ===
42 FEEFERRE EEE ECEEAEACE EEEEEE EH 1.E-1 eersteSea ce aaSSes esaaes GeaaassQO GC GOSSSeGOSSSe
VF(V) VR(V)
0 0.0 HEE 0.2 0.4 0.6 0.8 EEE 1.0 1.2 1.4 1.6 1.8 2.0 2.2 J 2.4 1.E-2100 PEPE 150 200 250 300 350 eee 400 450 eee 500 550 600 650
**----- End of picture text -----**
**Figure 4. Peak forward current versus case temperature (fSW > 10 kHz)**
**Figure 5. Junction capacitance versus reverse voltage applied (typical values)**
**==> picture [481 x 153] intentionally omitted <==**
**----- Start of picture text -----**
100 IM(A) 600 Cj (pF)
F=1 MHz
VOSC=30 mVRMS
=0.1 th 500 A 0 Tj=25 °C
80 |fn eee 400 ce CIC
60 Pt te RRE EE ELE COTMni
=0.3 300
40 E =0.5 EE~ ALE HSSCCIE CITI
P — | Soe | |~IA~ 200 HHL“‘
O O COI
20
100
=1 F =0.7 HSS— ee IN I ACOINSSSCITI
0 a aNSS7~ TC(°C) 0 Aa VR(V)
0 25 50 75 100 125 150 175 0.1 1.0 10.0 100.0 1000.0
**----- End of picture text -----**
**Figure 6. Relative variation of thermal impedance junction to case versus pulse duration**
**Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)**
**==> picture [479 x 151] intentionally omitted <==**
**----- Start of picture text -----**
1.0 Zth(j-c)/Rth(j-c) 1.E+3 IFSM(A)
0.9
0.8 Co ret Sg
0.7 Po ee Ta=25 °C
0.6
SS een ee at a ARS:i
0.5 ests ents ny ace et eee 1.E+2 ii Ta=150 °C waa
SE SS eat Srey
0.4 a ees
0.3 Ser ee e e Senn
0.2 Se S e Se
ICAI | ee
0.1 Single pulse [eae] [eee]
0.0 aeeosLL | state [cette] EE eeenaaa re Tae e tp(s) [| 1.E+1 a a a ll tp(s)
1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E-5 1.E-4 1.E-3 1.E-2
**----- End of picture text -----**
**DS15045** - **Rev 2**
**page 4/10**
**STPSC8G065 Characteristics**
**Figure 8. Total capacitive charges versus reverse voltage applied (typical values)**
**==> picture [226 x 147] intentionally omitted <==**
**----- Start of picture text -----**
30 QCj(nC)
25
20
15
10
5
VR(V)
0
0 50 100 150 200 250 300 350 400
**----- End of picture text -----**
**DS15045** - **Rev 2**
**page 5/10**
**STPSC8G065 Package information**
## **2 Package information**
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
## **2.1 TO-220AC package information**
- Epoxy meets UL 94,V0
- Cooling method: by conduction (C)
- Recommended torque value: 0.55 N·m
- Maximum torque value: 0.70 N·m
**Figure 9. TO-220AC package outline**
- (1) : Max resin gate protusion 0.5 mm
- (2) : Resin gate position is accepted in each of the two positions shown on the drawings or their symmetrical 0015990_15
_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._
**DS15045** - **Rev 2**
**page 6/10**
**STPSC8G065 Package information**
**Table 6. TO-220AC package mechanical data**
||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches (for reference only)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|0.173||0.181|
|C|1.23||1.32|0.048||0.051|
|D|2.40||2.72|0.094||0.107|
|E|0.49||0.70|0.019||0.027|
|F|0.61||0.88|0.024||0.034|
|F1|1.14||1.70|0.044||0.066|
|G|4.95||5.15|0.194||0.202|
|H2|10.00||10.40|0.393||0.409|
|L2||16.40|||0.645||
|L4|13.00||14.00|0.511||0.551|
|L5|2.65||2.95|0.104||0.116|
|L6|15.25||15.75|0.600||0.620|
|L7|6.20||6.60|0.244||0.259|
|L9|3.50||3.93|0.137||0.154|
|M||2.60|||0.102||
|Diam|3.75||3.85|0.147||0.151|
|Slug flatness||0.03|0.10||0.001|0.004|
_Note: For packing information, inner box dimensions and tube dimensions, refer to TN1173._
**DS15045** - **Rev 2**
**page 7/10**
**STPSC8G065 Ordering information**
## **3 Ordering information**
## **Table 7. Ordering information**
|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC8G065D|PSC8G065D|TO-220AC|1.86 g|50|Tube|
**DS15045** - **Rev 2**
**page 8/10**
**STPSC8G065**
## **Revision history**
## **Table 8. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-Sep-2025|1|Initial release.|
|13-Oct-2025|2|UpdatesTable 7.|
**DS15045** - **Rev 2**
**page 9/10**
**STPSC8G065**
## **IMPORTANT NOTICE – READ CAREFULLY**
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The purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment.
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No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
If the purchasers identify an ST product that meets their functional and performance requirements but that is not designated for the purchasers' market segment, the purchasers shall contact ST for more information.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2025 STMicroelectronics – All rights reserved
**DS15045** - **Rev 2**
**page 10/10**
## Links
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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc8g065d/sic-schottky-diode-650v-8a-to/dp/4837847)
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