# Silicon Carbide Schottky Diode, Single, 650 V, 8 A, 28 nC, TO-220AC

![Product image](https://novapart.co/image/farnell:2797968/)

**URL**: https://novapart.co/products/STPSC8065D/silicon-carbide-schottky-diode-single-650-v-8-a-28
**SKU**: STPSC8065D
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €0.8360
**Stock**: 10+

## Description

Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:8A; Total Capacitive Charge Qc:28nC; Diode Case Style:TO-220AC

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Average Forward Current | 8A |
| Total Capacitive Charge | 28nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2797968/)

## **STPSC8065** 

## 650 V power Schottky silicon carbide diode 

Datasheet - production data 

## **Description** 

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

## **Features** 

- No or negligible reverse recovery 

- Switching behavior independent of temperature 

- Dedicated to PFC applications 

- High forward surge capability 

- Operating Tj from -40 °C to 175 °C 

- ECOPACK®2 compliant component 

Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. 

**Table 1: Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|8 A|
|VRRM|650 V|
|Tj(max.)|175 °C|
|VF(typ.)|1.30 V|



July 2017 

DocID030730 Rev 2 

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This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STPSC8065** 

## **1 Characteristics** 

**Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage||650|V|
|IF(RMS)|Forward rms current||22|A|
|IF(AV)|Average forward current|TC= 150 °C_(1)_, DC current|8|A|
|IFRM|Repetitive peak forward<br>current|Tc= 150 °C, Tj= 175 °C, δ = 0.1|36|A|
|IFSM|Surge non repetitive forward<br>current|tp= 10 ms sinusoidal, Tc= 25 °C|46|A|
|||tp= 10 ms sinusoidal, Tc= 125 °C|38||
|||tp= 10 µs square, Tc= 25 °C|200||
|Tstg|Storage temperature range||-65 to +175|°C|
|Tj|Operating junction temperature_(2)_||-40 to +175|°C|



## **Notes:** 

(1)Value based on Rth(j-c) max. 

(2)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. 

**Table 3: Thermal parameters** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**Typ.**|**Max.**||
|Rth(j-c)|Junction to case|1.1|1.65|°C/W|



**Table 4: Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR_(1)_|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|2|105|µA|
|||Tj= 150 °C||-|20|750||
|VF_(2)_|Forward voltage drop|Tj= 25 °C|IF= 8 A|-|1.30|1.45|V|
|||Tj= 150 °C||-|1.45|1.65||
|||Tj= 175 °C||-|1.50|||



## **Notes:** 

(1)Pulse test: tp = 5 ms, δ < 2% 

(2)Pulse test: tp = 500 µs, δ < 2% 

To evaluate the conduction losses, use the following equation: 

P = 0.95 x IF(AV) + 0.087 x IF[2] (RMS) 

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**Characteristics** 

||**Table 5: Dynamic electrical characteristics**|**Table 5: Dynamic electrical characteristics**|||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Typ.**|**Unit**|
|QCj_(1)_|Total capacitive charge|VR= 400 V|28|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|540|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|45||



## **Notes:** 

> (1)Most accurate value for the capacitive charge: 𝑄𝑐𝑗 = ∫0𝑉𝑂𝑈𝑇 𝐶𝐽(𝑉𝑅) • 𝑑𝑉𝑅 

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**Characteristics** 

**STPSC8065** 

## **1.1 Characteristics (curves)** 

**==> picture [451 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1: Forward voltage drop versus forward  Figure 2: Reverse leakage current versus reverse<br>current (typical values)  voltage applied (typical values)<br>IF(A) IR (µA)<br>16 1.E+02<br>14 Pulse test : tp=500µs Tj=175 °C<br>T a =100 °C 1.E+01<br>12 Tj=150 °C<br>10 Ta=150 °C 1.E+00<br>8 Ta=25 °C Ta=175  ° C 1.E-01<br>6<br>4 1.E-02 Tj=25 °C<br>2<br>0 V F (V) 1.E-03 VR(V)<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 50 100 150 200 250 300 350 400 450 500 550 600 650<br>**----- End of picture text -----**<br>


**==> picture [462 x 399] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3: Peak forward current versus case  Figure 4: Junction capacitance versus reverse<br>temperature  voltage applied (typical values)<br>Cj(pF)<br>IM(A) 600<br>80<br>δ = 0.1 T F=1 MHz<br>500 VOSC=30 mVRMS<br>Tj=25 °C<br>δ [=tp/T] tp<br>60<br>400<br>δ = 0.3<br>40 300<br>δ = 0.5<br>200<br>20<br>δ = 1 δ = 0.7 100<br>0 TC(°C) 0 V R (V)<br>0 25 50 75 100 125 150 175 0.1 1.0 10.0 100.0 1000.0<br>Figure 6: Non-repetitive peak surge forward<br>Figure 5: Relative variation of thermal impedance<br>current versus pulse duration<br>junction to case versus pulse duration<br> (sinusoidal waveform)<br>1.0 Zth(j-c) /Rth(j-c) 1.E+03 IFSM(A)<br>0.9<br>0.8<br>0.7 Ta=25 °C<br>0.6<br>0.5 1.E+02<br>Ta=125 °C<br>0.4<br>0.3<br>0.2<br>Single pulse<br>0.1<br>t p (s)<br>0.0 1.E+01 tp(s)<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E-05 1.E-04 1.E-03 1.E-02<br>**----- End of picture text -----**<br>


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**==> picture [473 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
STPSC8065  Characteristics<br>Figure 7: Total capacitive charges versus reverse voltage applied (typical values)<br>**----- End of picture text -----**<br>


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**STPSC8065** 

**Package** information 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.55 N·m 

- Maximum torque value: 0.7 N·m 

## **2.1 TO-220AC package information** 

**Figure 8: TO-220AC package outline** 

~~©~~ 6/9 DocID030730 Rev 2 ~~7 2~~ 

**STPSC8065** 

**Package** information 

**Table 6: TO-220AC package mechanical data** 

|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|
||**Millimeters**||**Inches**||
||**Min.**|**Max.**|**Min.**|**Max.**|
|A|4.40|4.60|0.173|0.181|
|C|1.23|1.32|0.048|0.051|
|D|2.40|2.72|0.094|0.107|
|E|0.49|0.70|0.019|0.027|
|F|0.61|0.88|0.024|0.034|
|F1|1.14|1.70|0.044|0.066|
|G|4.95|5.15|0.194|0.202|
|H2|10.00|10.40|0.393|0.409|
|L2|16.40 typ.||0.645 typ.||
|L4|13.00|14.00|0.511|0.551|
|L5|2.65|2.95|0.104|0.116|
|L6|15.25|15.75|0.600|0.620|
|L7|6.20|6.60|0.244|0.259|
|L9|3.50|3.93|0.137|0.154|
|M|2.6|typ.|0.102 typ.||
|ØI|3.75|3.85|0.147|0.151|



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**Ordering** information 

**STPSC8065** 

## **3 Ordering information** 

## **Table 7: Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC8065D|PSC8065D|TO-220AC|1.86 g|50|Tube|



## **4 Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|13-Jun-2017|1|First issue.|
|18-Jul-2017|2|Updated_Table 4: "Static electrical characteristics"_|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc8065d/sic-schottky-diode-650v-8a-to220ac/dp/2797968)
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