# Silicon Carbide Schottky Diode, Single, 650 V, 6 A, 18 nC, TO-252 (DPAK)

![Product image](https://novapart.co/image/farnell:2986999RL/)

**URL**: https://novapart.co/products/STPSC6H065BY-TR/silicon-carbide-schottky-diode-single-650-v-6-a-18
**SKU**: STPSC6H065BY-TR
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.7700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Diode Mounting | Surface Mount |
| Operating Temperature Max | 175°C |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986999RL/)

**STPSC6H065BY-TR** 

Datasheet 

## Automotive 650 V power Schottky silicon carbide diode 

## **Features** 

**==> picture [53 x 6] intentionally omitted <==**

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A K<br>**----- End of picture text -----**<br>


- AEC-Q101 qualified 

- No reverse recovery charge in application current range 

- Switching behavior independent of temperature 

- Recommended to PFC applications 

- PPAP capable 

- ECOPACK[®] 2 compliant component 

## **Description** 

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. 

|**Product status**<br>~~[Lo~~|**Product status**<br>~~[Lo~~|
|---|---|
|STPS6H065BY-TR||
|**Product summary**<br>~~Po~~||
|**Symbol**<br>[P|**Value**<br>Po|
|**IF(AV)**|6 A|
|**VRRM**|650 V|
|**T j(max.)**|175 °C|



**DS12494** - **Rev 1** - **March 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC6H065BY-TR Characteristics** 

**1** 

## **Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|Tj= -40 °C to + 175 °C|650|V|
|IF(RMS)|Forward rms current||22|A|
|IF(AV)|Average forward current|Tc= 145 °C(1), DC|6|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal, Tc= 25 °C<br>tp= 10 ms sinusoidal, Tc= 125 °C<br>tp= 10 µs square, Tc= 25 °C|60<br>52<br>400|A|
|IFRM|Repetitive peak forward current|Tc= 145 °C(1), Tj= 175 °C, δ = 0.1|23|A|
|Tstg|Storage temperature range||-55 to +175|°C|
|Tj|Operating junction temperature range(2)||-40 to +175|°C|



_1. Value based on Rth(j-c) max._ 

_2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink._ 

**Table 2. Thermal parameters** 

|**Symbol**|**Parameter**|**Typ. value**|**Max. value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case|1.6|2.4|°C/W|



**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR(1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|5|60|µA|
|||Tj= 150 °C||-|50|250||
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 6 A|-|1.45|1.65|V|
|||Tj= 150 °C||-|1.7|2.05||



_1. tp = 10 ms, δ < 2%_ 

_2. tp = 500 μs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: P = 0.972 x IF(AV) + 0.180 x IF[2] (RMS) 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Typ.**|**Unit**|
|---|---|---|---|---|
|Qcj(1)|Total capacitive charge|VR= 400 V|18|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|300|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|30||



_1._ 

_Most accurate value for the capacitive charge:_ Qcj = ∫0VOUTcj VR × dVR 

**DS12494** - **Rev 1** 

**page 2/9** 

**STPSC6H065BY-TR Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**Figure 1. Forward voltage drop versus forward current Figure 2. Forward voltage drop versus forward current (typical values, low level) (typical values, high level)** 

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**----- Start of picture text -----**<br>
IF(A)<br>12<br>Pulse test : tp = 500 µs<br>10<br>8 Ta = 100 °C Ta = 150 °C<br>6 Ta = 175 °C<br>Ta = 25 °C<br>4<br>2<br>T a  = -40 °C VF(V)<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br>


**==> picture [225 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(A)<br>60<br>Pulse test: tp = 500 µs<br>50<br>40<br>Ta = 25  ° C<br>30<br>Ta = 100 °C<br>20 Ta = 150 °C<br>10<br>Ta = 175  ° C VF(V)<br>0<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0<br>**----- End of picture text -----**<br>


**Figure 3. Reverse leakage current versus reverse voltage applied (typical values)** 

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**----- Start of picture text -----**<br>
IR(µA)<br>1.E+02<br>Tj = 175 °C<br>1.E+01<br>Tj = 150 °C<br>1.E+00<br>1.E-01 Tj = 25 °C<br>VR(V)<br>1.E-02<br>0 50 100 150 200 250 300 350 400 450 500 550 600 650<br>**----- End of picture text -----**<br>


**Figure 4. Peak forward current versus case temperature** 

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**----- Start of picture text -----**<br>
IM(A)<br>70<br>T<br>δ = 0.1<br>60<br>δ [=tp/T] tp<br>50<br>40<br>δ = 0.3<br>30 δ = 0.5<br>20<br>10 δ = 1 δ = 0.7<br>T C (°C)<br>0<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


**Figure 5. Junction capacitance versus reverse voltage applied (typical values)** 

**Figure 6. Relative variation of thermal impedance junction to case versus pulse duration** 

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**----- Start of picture text -----**<br>
Cj(pF)<br>300<br>F = 1 MHz<br>250 VOSC  T j= 30 mV = 25 °C RMS<br>200<br>150<br>100<br>50<br>V R (V)<br>0<br>0.1 1.0 10.0 100.0 1000.0<br>**----- End of picture text -----**<br>


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Zth(j-c) /Rth(j-c)<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 Single pulse<br>t p(s)<br>0.0<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**DS12494** - **Rev 1** 

**page 3/9** 

**STPSC6H065BY-TR Characteristics (curves)** 

**==> picture [513 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Non-repetitive peak surge forward current Figure 8. Total capacitive charges versus reverse voltage<br>versus pulse duration (sinusoidal waveform) applied (typical values)<br>IFSM(A) QCj(nC)<br>1.E+03 20<br>16<br>Ta = 25  ° C<br>12<br>1.E+02 Ta = 125 °C<br>8<br>4<br>t p(s) 0 VR(V)<br>1.E+01<br>0 50 100 150 200 250 300 350 400<br>1.E-05 1.E-04 1.E-03 1.E-02<br>**----- End of picture text -----**<br>


**DS12494** - **Rev 1** 

**page 4/9** 

**STPSC6H065BY-TR Package information** 

**2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

## **2.1** 

## **DPAK package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

**Figure 9. DPAK package outline** 

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A<br>E<br>c2<br>b4<br>E1<br>L2<br>D1<br>D<br>H<br>L4<br>A1<br>b (2x)<br>e R<br>e1<br>c<br>Seating plane<br>A2<br>(L1)<br>L<br>V2<br>Gauge<br>0.25<br> plane<br>**----- End of picture text -----**<br>


**DS12494** - **Rev 1** 

**page 5/9** 

**STPSC6H065BY-TR DPAK package information** 

## **Table 5. DPAK mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Dim.**|**Millimeters**|||**Inches**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|0.087||0.094|
|A1|0.90||1.10|0.035||0.043|
|A2|0.03||0.23|0.001||0.009|
|b|0.64||0.90|0.025||0.035|
|b4|5.20||5.40|0.205||0.213|
|c|0.45||0.60|0.018||0.024|
|c2|0.48||0.60|0.019||0.024|
|D|6.00||6.20|0.236||0.244|
|D1|4.95|5.10|5.25|0.195|0.201|0.207|
|E|6.40||6.60|0.252||0.260|
|E1|4.60|4.70|4.80|0.181|0.185|0.189|
|e|2.16|2.28|2.40|0.085|0.090|0.094|
|e1|4.40||4.60|0.173||0.181|
|H|9.35||10.10|0.368||0.398|
|L|1.00||1.50|0.039||0.059|
|(L1)|2.60|2.80|3.00|0.102|0.110|0.118|
|L2|0.65|0.80|0.95|0.026|0.031|0.037|
|L4|0.60||1.00|0.024||0.039|
|R||0.20|||0.008||
|V2|0°||8°|0°||8°|



**Figure 10. DPAK recommended footprint (dimensions are in mm)** 

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**----- Start of picture text -----**<br>
6.3<br>10.7<br>6.1<br>B<br>1.5<br>4.572<br>A<br>The device must be positioned within<br>2.8 min.<br>2.8<br>**----- End of picture text -----**<br>


**DS12494** - **Rev 1** 

**page 6/9** 

**STPSC6H065BY-TR Ordering Information** 

**3 Ordering Information** 

## **Table 6. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC6H065BY-TR|PSC6H 065Y|DPAK|0.32 g|2500|Tape and reel|



**DS12494** - **Rev 1** 

**page 7/9** 

**STPSC6H065BY-TR** 

## **Revision history** 

**Table 7. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|13-Mar-2018|1|Initial release.|



**DS12494** - **Rev 1** 

**page 8/9** 

**STPSC6H065BY-TR** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2018 STMicroelectronics – All rights reserved 

**DS12494** - **Rev 1** 

**page 9/9** 



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