# Silicon Carbide Schottky Diode, Dual Common Cathode, 650 V, 40 A, 62 nC, TO-247

![Product image](https://novapart.co/image/farnell:3366951/)

**URL**: https://novapart.co/products/STPSC40065CW/silicon-carbide-schottky-diode-dual-common-cathode
**SKU**: STPSC40065CW
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €5.2300
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 40A |
| Total Capacitive Charge | 62nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3366951/)

## **STPSC40065C** 

## 650 V power Schottky silicon carbide diode 

Datasheet - production data 

**==> picture [97 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
A1<br>K<br>A2<br>“all<br>A2<br>K<br>A1<br>TO-247<br>**----- End of picture text -----**<br>


## **Description** 

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter. 

**Table 1: Device summary** 

## **Features** 

- No reverse recovery charge in application current range 

- Switching behavior independent of temperature 

- Dedicated to PFC applications 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|2 x 20 A|
|VRRM|650 V|
|Tj(max.)|175 °C|
|VF(typ.)|1.30 V|



- ECOPACK[®] 2 compliant component 

September 2016 

DocID027965 Rev 3 

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This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STPSC40065C** 

## **1 Characteristics** 

**Table 2: Absolute ratings per diode (limiting values at 25 °C unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage||650|V|
|IF(RMS)|Forward rms current||40|A|
|IF(AV)|Average forward current|Tc= 140 °C_(1)_, DC, per diode|20|A|
|||Tc= 130 °C_(1)_, DC, per device|40||
|IFRM|Repetitive peak forward<br>current|Tc=140 °C, Tj= 175 °C, δ = 0.1|87|A|
|IFSM|Surge non repetitive<br>forward current|tp= 10 ms sinusoidal, Tc= 25 °C|90|A|
|||tp= 10 ms sinusoidal, Tc= 125 °C|70||
|||tp= 10 µs square, Tc= 25 °C|400||
|Tstg|Storage temperature range||-55 to +175|°C|
|Tj|Operating junction temperature range_(2)_||-40 to +175|°C|



## **Notes:** 

- (1)Value based on Rth(j-c) max. 

- (2)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. 

**Table 3: Thermal parameters** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case|Per diode|0.90|°C/W|
|||Total|0.60||
|Rth(c)|Coupling||0.30||



**Table 4: Static electrical characteristics (per diode)** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR_(1)_|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|30|300|µA|
|||Tj= 150 °C||-|280|2000||
|||Tj= 25 °C|VR= 600 V|-|15|150||
|VF_(2)_|Forward voltage drop|Tj= 25 °C|IF= 20 A|-|1.30|1.45|V|
|||Tj= 150 °C||-|1.45|1.65||
|||Tj= 175 °C||-|1.50|||



## **Notes:** 

- (1)Pulse test: tp = 5 ms, δ < 2% 

- (2)Pulse test: tp = 500 µs, δ < 2% 

To evaluate the conduction losses use the following equation: 

P = 1.02 x IF(AV) + 0.039 x IF²(RMS) 

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**STPSC40065C** 

**Characteristics** 

**Table 5: Dynamic electrical characteristics (per diode)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Qcj_(1)_|Total capacitive charge|VR= 400 V|-|62|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|1250|-|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|-|100|-||



## **Notes:** 

(1)Most accurate value for the capacitive charge: 𝑉𝑂𝑈𝑇 𝑄𝑐𝑗 = ∫0 𝐶𝐽(𝑉𝑅) `．` 𝑑𝑉𝑅 

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**Characteristics** 

**STPSC40065C** 

## **1.1 Characteristics (curves)** 

**==> picture [456 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1: Forward voltage drop versus forward  Figure 2: Reverse leakage current versus reverse<br>current (typical values, per diode)  voltage applied (typical values, per diode)<br>40 IF(A) 1.E+03 IR(µA)<br>35 Pulse test : t p =500µs Tj=175 °C<br>30 T a =25 °C 1.E+02 Tj=150 °C<br>25 T a =100 °C Ta=150 °C 1.E+01<br>20 Ta=175 °C<br>1.E+00<br>15<br>10 1.E-01 Tj=25 °C<br>5<br>V F (V) V R (V)<br>0 1.E-02<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 50 100 150 200 250 300 350 400 450 500 550 600 650<br>**----- End of picture text -----**<br>


**==> picture [457 x 181] intentionally omitted <==**

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Figure 3: Peak forward current versus case  Figure 4: Junction capacitance versus reverse<br>temperature (per diode)  voltage applied (typical values, per diode)<br>140 IM(A)δ=0.1 T 1400 Cj(pF)<br>F=1 MHz<br>120 1200 V OSC =30 mV RMS<br>δ=tp/T tp Tj=25 °C<br>100 1000<br>80 δ=0.3 800<br>60 δ=0.5 600<br>40 400<br>δ=1 δ=0.7<br>20 200<br>T C (°C) VR(V)<br>0 0<br>0 25 50 75 100 125 150 175 0.1 1.0 10.0 100.0 1000.0<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 6: Non-repetitive peak surge forward<br>Figure 5: Relative variation of thermal impedance  current versus pulse duration (sinusoidal<br>junction to case versus pulse duration  waveform, per diode)<br>1.0 Zth(j-c) /Rth(j-c) 1.E+03 IFSM(A)<br>0.9<br>0.8 Ta=25 ° C<br>0.7<br>0.6<br>0.5 Ta=125 °C<br>1.E+02<br>0.4<br>0.3<br>0.2<br>Single pulse<br>0.1<br>tp(s)<br>0.0 tp(s)<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01<br>1.E-05 1.E-04 1.E-03 1.E-02<br>**----- End of picture text -----**<br>


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**STPSC40065C** 

**Characteristics** 

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**----- Start of picture text -----**<br>
Figure 7: Total capacitive charges versus reverse voltage applied (typical values, per diode)<br>QCj(nC)<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>V R (V)<br>0<br>0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


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**STPSC40065C** 

**Package** information 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

- Epoxy meets UL 94,V0 

- Recommended torque value: 0.8 N·m 

- Maximum torque value: 1 N·m 

## **2.1 TO-247 package information** 

**Figure 8: TO-247 package outline** 

~~©~~ 6/9 DocID027965 Rev 3 

**STPSC40065C Package** information 

|||**Table 6: TO-247package mechanical data**|**Table 6: TO-247package mechanical data**|**Table 6: TO-247package mechanical data**|**Table 6: TO-247package mechanical data**||
|---|---|---|---|---|---|---|
|**Ref.**|||**Dimensions**||||
|||**Millimeters**|||**Inches**||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|0.191||0.203|
|A1|2.20||2.60|0.086||0.102|
|b|1.00||1.40|0.039||0.055|
|b1|2.00||2.40|0.078||0.094|
|b2|3.00||3.40|0.118||0.133|
|c|0.40||0.80|0.015||0.031|
|D_(1)_|19.85||20.15|0.781||0.793|
|E|15.45||15.75|0.608||0.620|
|e|5.30|5.45|5.60|0.209|0.215|0.220|
|L|14.20||14.80|0.559||0.582|
|L1|3.70||4.30|0.145||0.169|
|L2||18.50|||0.728||
|ØP_(2)_|3.55||3.65|0.139||0.143|
|ØR|4.50||5.50|0.177||0.217|
|S|5.30|5.50|5.70|0.209|0.216|0.224|



## **Notes:** 

(1)Dimension D plus gate protusion does not exceed 20.5 mm 

(2)Resin thickness around the mounting hole is not less than 0.9 mm. 

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**Ordering** information 

**STPSC40065C** 

## **3 Ordering information** 

**Table 7: Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC40065CW|PSC40065CW|TO-247|4.43g|30|Tube|



## **4 Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-Jun-2015|1|First issue.|
|17-May-2016|2|Datasheet curves and device parameters updated<br>followingoptimization of the die layout.|
|27-Sep-2016|3|Updated_Section 1: "Characteristics"_.|



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**STPSC40065C** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc40065cw/sic-schottky-diode-650v-40a-to/dp/3366951)
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