# Silicon Carbide Schottky Diode, Dual Common Cathode, 1.2 kV, 30 A, 94 nC, TO-247
**URL**: https://novapart.co/products/STPSC31H12CWY/silicon-carbide-schottky-diode-dual-common-cathode
**SKU**: STPSC31H12CWY
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €6.1600
**Stock**: 200+
**Lead Time**: 127 days (indicative)
## Description
Available until stocks are exhausted
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 30A |
| Total Capacitive Charge | 94nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3577217/)
**STPSC31H12C-Y**
Datasheet
## 2 X 15 A, 1200 V power Schottky silicon carbide diode
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**----- Start of picture text -----**
A1
K
A2
A2
TO-247 K
A1
**----- End of picture text -----**
## **Features**
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high-voltage periphery
- PPAP capable
- • Operating Tj from -40 °C to 175 °C
- ECOPACK 2 compliant
## **Applications**
- OBC (on board battery chargers)
- PHEV - EV charging stations
- Resonant LLC topology
- PFC functions (power factor corrector)
## **Description**
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
## **Product status link**
STPSC31H12C-Y
|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|2 x 15 A|
|**VRRM**|1200 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.35 V|
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
## **Product label**
**==> picture [55 x 58] intentionally omitted <==**
**DS13325** - **Rev 1** - **April 2020** For further information contact your local STMicroelectronics sales office.
www.st.com
**STPSC31H12C-Y Characteristics**
**1**
## **Characteristics**
**Table 1. Absolute ratings (limiting values per diode at 25 °C , unless otherwise specified)**
|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -40 °C|to +175 °C)||1200|V|
|IF(RMS)|Forward rms current|||38|A|
|IF(AV)|Average forward current|Tc= 150 °C, DC current|Per diode|15|A|
||||Per device|30||
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|Tc= 25 °C|105|A|
|||tp= 10 ms sinusoidal|Tc= 125 °C|90||
|Tstg|Storage temperature range|||-55 to +175|°C|
|Tj|Operating junction temperature(1)|||-40 to +175|°C|
_1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink._
**Table 2. Thermal resistance parameters**
|**Sbl**|**Pt**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|---|
|**ymo**|**arameer**||**Typ.**|**Max.**|**n**|
|Rth(j-c)|Junction to case|Per diode|0.50|0.70|°C/W|
|||Per device|0.25|0.35||
For more information, please refer to the following application note:
- AN5088: Rectifiers thermal management, handling and mounting recommendations
**Table 3. Static electrical characteristics (per diode)**
|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|7.5|90|µA|
|||Tj= 150 °C||-|45|600||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 15 A|-|1.35|1.50|V|
|||Tj= 150 °C||-|1.75|2.25||
_1. Pulse test: tp = 10 ms, δ < 2%_
_2. Pulse test: tp = 500 µs, δ < 2%_
To evaluate the conduction losses, use the following equation:
P = 1.09 x IF(AV) + 0.0775 x IF[2] (RMS)
For more information, please refer to the following application notes related to the power losses:
- AN604: Calculation of conduction losses in a power rectifier
- AN4021: Calculation of reverse losses on a power diode
**DS13325** - **Rev 1**
**page 2/9**
**STPSC31H12C-Y Characteristics (curves)**
**Table 4. Dynamic electrical characteristics (per diode)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|QCj (1)|Total capacitive charge|VR= 800 V|-|94|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz
VR= 800 V, Tc= 25 °C, F = 1 MHz|-|1200|-|pF|
||||-|78|-||
_1._
VR _Most accurate value for the capacitive charge:_ Qcj VR = ∫ Cj V dV 0
## **1.1 Characteristics (curves)**
**==> picture [513 x 191] intentionally omitted <==**
**----- Start of picture text -----**
Figure 1. Forward voltage drop versus forward current Figure 2. Reverse leakage current versus reverse voltage
(typical values, per diode) applied (typical values, per diode)
IF(A) IR (µA)
30 1.E+02
Pulse test : tp = 500 µs
25 Ta = -40 °C 1.E+01
20 T j = 150 °C
T a = 25 °C T a = 150 °C 1.E+00
15 Tj = 25 °C
1.E-01
10
1.E-02
5
VF(V) VR (V)
0 1.E-03
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200
**----- End of picture text -----**
**Figure 3. Peak forward current versus case temperature Figure 4. Junction capacitance versus reverse voltage (per diode) applied (typical values, per diode)**
**==> picture [477 x 143] intentionally omitted <==**
**----- Start of picture text -----**
140 IM(A) 1200 Cj(pF)
δ = 0.1 T F=1 MHz
120 δ [=tp/T] tp 1000 VOSC T =30 mVj =25 °C RMS
100 800
80 δ = 0.3 600
60 δ = 0.5
400
40
200
δ = 1 δ = 0.7
20
V R (V)
T C (°C) 0
0
0 25 50 75 100 125 150 175 0.1 1.0 10 100 1000 10000
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**DS13325** - **Rev 1**
**page 3/9**
**STPSC31H12C-Y Characteristics (curves)**
**==> picture [513 x 191] intentionally omitted <==**
**----- Start of picture text -----**
Figure 5. Relative variation of thermal impedance junction Figure 6. Non-repetitive peak surge forward current
to case versus pulse duration versus pulse duration (sinusoidal waveform, per diode)
Zth(j-c) /Rth(j-c) 1.E+03 IFSM (A)
1.0
0.9
T a = 25 °C
0.8
0.7
0.6 T a = 150 °C
0.5 1.E+02
0.4
0.3
0.2
Single pulse
0.1
t p(s)
0.0 tp (s)
1.E+01
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
1.E-05 1.E-04 1.E-03 1.E-02
**----- End of picture text -----**
**Figure 7. Total capacitive charges versus reverse voltage applied (typical values, per diode)**
**==> picture [225 x 141] intentionally omitted <==**
**----- Start of picture text -----**
100 Qcj(nC)
80
60
40
20
VR (V)
0
0 100 200 300 400 500 600 700 800
**----- End of picture text -----**
**DS13325** - **Rev 1**
**page 4/9**
**STPSC31H12C-Y Package information**
**2**
## **Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
## **2.1 TO-247 package information**
- Epoxy meets UL94, V0
- Cooling method: by conduction (C)
- Recommended torque value: 0.8 N·m
- Maximum torque value: 1.0 N·m
**Figure 8. TO-247 package outline**
**==> picture [99 x 33] intentionally omitted <==**
**==> picture [446 x 328] intentionally omitted <==**
**----- Start of picture text -----**
A Heat-sink plane
E
∅ P
S
∅ R
D
L2
L1
b1
L
b2
1 2 3 3 2 1
b c
A1
Back view
e
**----- End of picture text -----**
**DS13325** - **Rev 1**
**page 5/9**
**STPSC31H12C-Y TO-247 package information**
## **Table 5. TO-247 package mechanical data**
||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches (for reference only)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|0.191||0.203|
|A1|2.20||2.60|0.086||0.102|
|b|1.00||1.40|0.039||0.055|
|b1|2.00||2.40|0.078||0.094|
|b2|3.00||3.40|0.118||0.133|
|c|0.40||0.80|0.015||0.031|
|D|19.85||20.15|0.781||0.793|
|E|15.45||15.75|0.608||0.620|
|e|5.30|5.45|5.60|0.209|0.215|0.220|
|L|14.20||14.80|0.559||0.582|
|L1|3.70||4.30|0.145||0.169|
|L2||18.50|||0.728||
|ØP|3.55||3.65|0.139||0.143|
|ØR|4.50||5.50|0.177||0.217|
|S|5.30|5.50|5.70|0.209|0.216|0.224|
**DS13325** - **Rev 1**
**page 6/9**
**STPSC31H12C-Y Ordering information**
**3 Ordering information**
## **Table 6. Ordering information**
|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC31H12CWY|SC31H12CWY|TO-247|5.4 g|30|Tube|
**DS13325** - **Rev 1**
**page 7/9**
**STPSC31H12C-Y**
## **Revision history**
**Table 7. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|20-Apr-2020|1|First issue.|
**DS13325** - **Rev 1**
**page 8/9**
**STPSC31H12C-Y**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
**DS13325** - **Rev 1**
**page 9/9**
## Links
- [View this product on Novapart](https://novapart.co/products/STPSC31H12CWY/silicon-carbide-schottky-diode-dual-common-cathode)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc31h12cwy/sic-schottky-diode-1-2kv-30a-to/dp/3577217)
---
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