# Silicon Carbide Schottky Diode, Dual Common Cathode, 1.2 kV, 30 A, 94 nC, TO-247

![Product image](https://novapart.co/image/farnell:2760454/)

**URL**: https://novapart.co/products/STPSC30H12CWL/silicon-carbide-schottky-diode-dual-common-cathode
**SKU**: STPSC30H12CWL
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €6.6800
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Product Range:-; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:30A; Total ; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 30A |
| Total Capacitive Charge | 94nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2760454/)

## **STPSC30H12C** 

## 1200 V power Schottky silicon carbide diode 

Datasheet - production data 

**==> picture [86 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
A1<br>K<br>A2 Ma n<br>A2<br>K<br>A1<br>TO-247 LL<br>**----- End of picture text -----**<br>


## **Features** 

- No or negligible reverse recovery 

- Switching behavior independent of temperature 

- Robust high voltage periphery 

- Operating Tj from -40 °C to 175 °C 

- ECOPACK[®] 2 compliant 

## **Description** 

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. 

**Table 1: Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|2 x 15 A|
|VRRM|1200 V|
|Tj(max.)|175 °C|
|VF(typ.)|1.35 V|



February 2017 

DocID030339 Rev 1 

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This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STPSC30H12C** 

## **1 Characteristics** 

**Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage (Tj= -40 °C to +175 °C)|||1200|V|
|IF(RMS)|Forward rms current|||38|A|
|IF(AV)|Average forward current|TC= 150 °C<br>DC current|Per diode/per device|15/30|A|
|||TC= 135 °C<br>DC current||21/42||
|||TC= 25 °C<br>DC current||38/76||
|IFRM|Repetitive peak forward<br>current|TC= 150 °C,Tj=|175 °C, δ = 0.1|61|A|
|IFSM|Surge non repetitive<br>forward current|tp= 10 ms<br>sinusoidal|TC= 25 °C|105|A|
||||TC= 150 °C|90||
|||tp= 10 µs<br>square|TC= 25 °C|630||
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Operating junction temperature range|||-40 to +175|°C|



**Table 3: Thermal resistance parameters** 

|**Symbol**|**Parameter**||**Typ.**<br>**value**|**Max.**<br>**value**|**Unit**|
|---|---|---|---|---|---|
|Rth(j-c)|Junction to case|Per diode|0.50|0.70|°C/W|
|||Per device|0.25|0.35||



**Table 4: Static electrical characteristics (per diode)** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR_(1)_|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|7.5|90|µA|
|||Tj= 150 °C||-|45|600||
|VF_(2)_|Forward voltage drop|Tj= 25 °C|IF= 15 A|-|1.35|1.50|V|
|||Tj= 150 °C||-|1.75|2.25||



## **Notes:** 

(1)Pulse test: tp = 10 ms, δ < 2% 

(2)Pulse test: tp = 500 µs, δ < 2% 

To evaluate the conduction losses, use the following equation: 

P = 1.09 x IF(AV) + 0.0775 x IF[2] (RMS) 

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**Characteristics** 

**Table 5: Dynamic electrical characteristics (per diode)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|QCj_(1)_|Total capacitive charge|VR= 800 V|-|94|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|1200|-|pF|
|||VR= 800 V, Tc= 25 °C, F = 1 MHz|-|78|-||



## **Notes:** 

> (1)Most accurate value for the capacitive charge: 𝑄𝑐𝑗(𝑉𝑅) = ∫0𝑉𝑅 𝐶𝑗(𝑉)𝑑𝑉 

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**Characteristics** 

**STPSC30H12C** 

## **1.1 Characteristics (curves)** 

**==> picture [451 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1: Forward voltage drop versus forward  Figure 2: Reverse leakage current versus reverse<br>current (typical values, per diode)  voltage applied (typical values, per diode)<br>30 IF(A) IR (µA)<br>1.E+02<br>Pulse test : t  p = 500 µs<br>25<br>1.E+01<br>20 T j  = 150 °C<br>T a = 25 °C T a  = 150 °C 1.E+00<br>15 Tj = 25 °C<br>1.E-01<br>10<br>5 1.E-02<br>V F (V) VR (V)<br>0 1.E-03<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>**----- End of picture text -----**<br>


**==> picture [462 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3: Peak forward current versus case<br>temperature (per diode)  Figure 4: Junction capacitance versus reverse<br>voltage applied (typical values, per diode)<br>140 IM (A)<br>T Cj(pF)<br>δ = 0.1 1200<br>120 F = 1 MHz<br>δ [= tp/T] tp 1000 VOSC T  = 30 mV j = 25  ° C RMS<br>100<br>800<br>80<br>δ = 0.3<br>600<br>60 δ = 0.5<br>400<br>40<br>δ = 1 δ = 0.7 200<br>20 VR (V)<br>T c (°C) 0<br>0 0.1 1.0 10.0 100.0 1000.0 10000.0<br>0 25 50 75 100 125 150 175<br>Figure 6: Non-repetitive peak surge forward<br>Figure 5: Relative variation of thermal impedance<br>current versus pulse duration<br>junction to case versus pulse duration<br> (sinusoidal waveform, per diode)<br>Zth(j-c)/Rth(j-c)<br>1.0 IFSM (A)<br>1.E+03<br>0.9<br>0.8 T a = 25 °C<br>0.7<br>0.6<br>0.5 Ta= 150 °C<br>0.4 1.E+02<br>0.3<br>0.2<br>0.1 Single pulse tp (s)<br>0.0<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tp(s)<br>1.E+01<br>1.E-05 1.E-04 1.E-03 1.E-02<br>**----- End of picture text -----**<br>


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**Characteristics** 

**==> picture [216 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7: Total capacitive charges versus reverse<br>voltage applied (typical values, per diode)<br>Qcj(nC)<br>100<br>80<br>60<br>40<br>20<br>VR(V)<br>0<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br>


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**STPSC30H12C** 

**Package information** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.9 to 1.2 N·m 

## **2.1 TO-247 long leads package information** 

**Figure 8: TO-247 long leads package outline** 

**==> picture [384 x 462] intentionally omitted <==**

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**Package information** 

**Table 6: TO-247 long leads package mechanical data** 

|**Dim.**||**mm.**|||**Inches**||
|---|---|---|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.90||5.15|0.192||0.202|
|D|1.85||2.10|0.072||0.082|
|E|0.55||0.67|0.021||0.026|
|F|1.07||1.32|0.042||0.051|
|F1|1.90||2.38|0.074||0.093|
|F2|2.87||3.38|0.110||0.133|
|G||10.90 BSC|||0.429 BSC||
|H|15.77||16.02|0.620||0.630|
|L|20.82||21.07|0.810||0.820|
|L1|4.16||4.47|0.163||0.175|
|L2|5.49||5.74|0.216||0.225|
|L3|20.05||20.30|0.789||0.799|
|L4|3.68||3.93|0.144||0.154|
|L5|6.04||6.29|0.237||0.247|
|M|2.25||2.55|0.088||0.100|
|V||10°|||10°||
|V1||3°|||3°||
|V3||20°|||20°||
|DIA|3.55||3.66|0.139||0.143|



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**Ordering information** 

**STPSC30H12C** 

## **3 Ordering information** 

**Table 7: Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC30H12CWL|STPSC30H12CWL|TO-247 LL|6.09g|30|Tube|



## **4** 

## **Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|15-Feb-2017|1|Initial release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc30h12cwl/sic-schottky-diode-1-2kv-30a-to/dp/2760454)
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