# Silicon Carbide Schottky Diode, Single, 1.2 kV, 30 A, 149 nC, DO-247LL

![Product image](https://novapart.co/image/farnell:4224739/)

**URL**: https://novapart.co/products/STPSC30G12WL/silicon-carbide-schottky-diode-single-12-kv-30-a
**SKU**: STPSC30G12WL
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €7.8900
**Stock**: 50+
**Lead Time**: 53 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | DO-247LL |
| Diode Configuration | Single |
| Average Forward Current | 30A |
| Total Capacitive Charge | 149nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4224739/)

**STPSC30G12** 

Datasheet 

## 1200 V, 30 A power Schottky high surge silicon carbide diode 

**==> picture [85 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
A K<br>K<br>A<br>K<br>DO-247 LL<br>**----- End of picture text -----**<br>


## **Features** 

- None or negligible reverse recovery 

- Switching behavior independent of temperature 

- Robust high voltage periphery 

- Operating Tj from -55 °C to 175 °C 

- Avalanche energy rated 

- ECOPACK2 compliant component 

## **Applications** 

- Solar inverter 

- Boost PFC 

- Air conditioning equipment 

- UPS power supply 

- Telecom / Server power equipment 

- HEV/EV OBC (On board battery chargers) 

- EV Charging station 

## **Description** 

## **Product label** 

**==> picture [55 x 58] intentionally omitted <==**

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

**Based on latest technology optimization, this diode has an improved forward surge current capability** , making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases. 

## **Product status link** 

STPSC30G12 

|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|30 A|
|**VRRM**|1200 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.35 V|



**DS14115** - **Rev 1** - **November 2022** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC30G12 Characteristics** 

**1 Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -40 °C to +175 °C)|||1200|V|
|EAS(1)|Single pulse avalanche energy, starting Tj= 25 °C, IAS= 7.7 A, L = 10 mH|||296|mJ|
|IF(RMS)|Forward rms current|||79|A|
|IF(AV)|Average forward current|Tc= 145 °C, δ = 1||30|A|
|IFRM|Repetitive peak forward current|Tc= 145 °C, Tj= 175 °C, δ = 0.1, fsw> 10 kHz||119|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|Tc= 25 °C|250|A|
||||Tc= 150 °C|225||
|||tp= 10 µs square|Tc= 25 °C|1550||
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Operating junction temperature range|||-55 to +175|°C|



_1. Please refer to Figure 1._ 

**Table 2. Thermal resistance parameters** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**Typ.**|**Max.**|**n**|
|Rth(j-c)|Junction to case|0.30|0.45|°C/W|



For more information, please refer to the following application note: 

- AN5088 : Rectifiers thermal management, handling and mounting recommendations 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|15|225|µA|
|||Tj= 150 °C||-|50|750||
|||Tj= 175 °C|||112|||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 30 A|-|1.35|1.50|V|
|||Tj= 150 °C||-|1.75|2.10||
|||Tj= 175 °C|||1.90|||



_1. Pulse test: tp = 10 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: 

P = 0.924 x IF(AV) + 0.039 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses: 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses on a power diode 

**DS14115** - **Rev 1** 

**page 2/10** 

**STPSC30G12** 

**Characteristics** 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Typ.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|QCj (1)<br>~~a~~|Total capacitive charge<br>~~ee~~|VR= 800 V<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|149<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|nC<br>~~ee~~|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|2272|-|pF|
|||VR= 800 V, Tc= 25 °C, F = 1 MHz|-|108|-||



_1._ 

**Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test)** 

**==> picture [273 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
i(t), v(t)<br>VCL_DUT<br>IAS —<br>IL IDUT<br>7”Ye<br>t<br>tp<br>**----- End of picture text -----**<br>


**Figure 2. Thermal transient impedance model circuit of the diode – Zth(j-c)** 

**Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)** 

|**Ref.**<br>~~es~~|**Value (K/W)**<br>~~ee~~|**Ref.**<br>~~ee~~|**Value (J/K)**|
|---|---|---|---|
|Rth1<br>~~es~~|19.6m<br>~~ee~~|Cth1<br>~~ee~~|4.88m|
|Rth2|75.7m|Cth2|3.23m|
|Rth3|102m|Cth3|22.2m|
|Rth4|79.1m|Cth4|109m|
|Rth5|24.4m|Cth5|1.43|



**DS14115** - **Rev 1** 

**page 3/10** 

**STPSC30G12 Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**==> picture [495 x 589] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Forward voltage drop versus forward current Figure 4. Reverse leakage current versus reverse voltage<br>(typical values) applied (typical values)<br>IF(A) IR(µA)<br>60 1.E+3<br>Pulse test : tp=380 µs<br>es ee ee 2A = SSS<br>50<br>1.E+2<br>FEFEEE Yee) EERREEE Tj=175 °C EEE<br>40 Ta=25 °C Tj=150 °C<br>SSO Ta=100 °C SAR 1.E+1 S Tj=100 °C ee<br>30 Ta=150 °C Tj=25 °C<br>Ta=175 °C 1.E+0<br>20<br>1.E-1<br>10 FEERAA EEE $2022 aeeeeeeeeeeeeeee<br>VF(V) VR(V)<br>0 2 1.E-2 REEEEEEEELE EEL EL EEL t<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>Figure 6. Junction capacitance versus reverse voltage<br>Figure 5. Peak forward current versus case temperaturePeak forward current versus case temperature<br>applied (typical values)<br>IM(A)<br>300 Cj (pF)<br>2500<br>P| | | | tt tT te F=1 MHz<br>250 δ=0.1 VOSC=30 mVRMS<br>Tj=25 °C<br>i 2000 S hae<br>ee PSST ETI TN<br>200<br>S EE PLANE TIT TTT TUTTE PTT<br>1500<br>150 H δ=0.3 A} BSE EH CMM ETTATE<br>SSESSRE δ=0.5  CEES CATIAETN ETE TT<br>100 ee ee ee ee 1000 PTI NUT TIE, ETT<br>-— —F i NII<br>e e TAME ENE ET,<br>50 δ=1 δ=0.7 500<br>J eS SSSA PAI PIII TI UT<br>0 0 SN 25 50 75 100 125TC(°C) 150 _ 175 0 NIEa TIPSSa TTT VR(V)<br>0.1 1.0 10.0 100.0 1000.0 10000.0<br>Figure 7. Relative variation of thermal impedance junctionRelative variation of thermal impedance junction Figure 8. Non-repetitive peak surge forward current<br>to case versus pulse duration versus pulse duration (sinusoidal waveform)<br>Zth(j-c)/Rth(j-c) IFSM(A)<br>1.00.9 Se eee eee eee 1.E+4 = ae<br>0.8 er A EEEa QO OO OG GN GG GO CGO<br>CE Ee<br>0.7 L i Zt a aee<br>| TT TTT ETTYT ee eel<br>[| TTT TTTTT<br>0.6<br>0.5 [oTfT TT ETTT T aT ] 1.E+3 eeEa.alll Ta=25 °C<br>te SSS rR cre<br>0.4<br>0.3 ee eee te 7 att ee aSe S Ta=150 °C SSESL<br>0.2<br>es e e :<br>0.1 Single pulse<br>0.0 FadlKee ee EHHEEEEHH Hf tp(s) 1.E+2 a tp(s)<br>1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E-5 1.E-4 1.E-3 1.E-2<br>**----- End of picture text -----**<br>


**Figure 5. Peak forward current versus case temperaturePeak forward current versus case temperature** 

**Figure 7. Relative variation of thermal impedance junctionRelative variation of thermal impedance junction to case versus pulse duration** 

**DS14115** - **Rev 1** 

**page 4/10** 

**STPSC30G12 Characteristics (curves)** 

**Figure 9. Total capacitive charges versus reverse voltage applied (typical values)** 

**==> picture [226 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
QCj(nC)<br>160<br>120<br>80<br>40<br>VR(V)<br>0<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br>


**DS14115** - **Rev 1** 

**page 5/10** 

**STPSC30G12 Package information** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 DO-247 LL package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.8 N·m 

- Maximum torque value: 1.0 N·m 

**Figure 10. DO-247 LL package outline** 

**DS14115** - **Rev 1** 

**page 6/10** 

**STPSC30G12 DO-247 LL package information** 

_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ 

**Table 6. DO-247 LL package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches (for reference only)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|0.192|0.197|0.201|
|A1|2.31|2.41|2.51|0.090|0.095|0.099|
|A2|1.90|2.00|2.10|0.074|0.079|0.083|
|a|0.00||0.15|0.000||0.006|
|a'|0.00||0.15|0.000||0.006|
|b|1.16||1.29|0.045||0.051|
|b2|1.96||2.06|0.077||0.082|
|b6|||2.25|||0.089|
|c|0.59||0.66|0.023||0.026|
|D|20.90|21.00|21.10|0.822|0.827|0.831|
|D1|16.25|16.55|16.85|0.639|0.652|0.664|
|D2|1.05|1.20|1.35|0.041|0.047|0.054|
|E|15.70|15.80|15.90|0.618|0.622|0.626|
|E1|13.06|13.26|13.46|0.514|0.522|0.530|
|E2|4.90|5.00|5.10|0.192|0.197|0.201|
|E3|2.40|2.50|2.60|0.094|0.098|0.103|
|e|10.78|10.88|10.98|0.424|0.428|0.433|
|L|19.80|19.92|20.10|0.779|0.784|0.792|
|L1|3.93||4.46|0.154||0.176|
|M|0.35||0.95|0.013||0.038|
|P|3.50|3.60|3.70|0.137|0.142|0.146|
|P1|7.00||7.40|0.275||0.292|
|P2|2.40|2.50|2.60|0.094|0.098|0.103|
|Q|5.60||6.00|0.220||0.237|
|S|6.05|6.15|6.25|0.238|0.242|0.247|
|T|9.80||10.20|0.385||0.402|
|U|6.00||6.40|0.236||0.252|



**DS14115** - **Rev 1** 

**page 7/10** 

**STPSC30G12 Ordering information** 

## **3 Ordering information** 

## **Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC30G12WL|STPSC30G12WL|DO-247LL|5.9 g|30|Tube|



**DS14115** - **Rev 1** 

**page 8/10** 

**STPSC30G12** 

## **Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-Nov-2022|1|Initial release.|



**DS14115** - **Rev 1** 

**page 9/10** 

**STPSC30G12** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2022 STMicroelectronics – All rights reserved 

**DS14115** - **Rev 1** 

**page 10/10** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc30g12wl/sic-schottky-diode-1-2kv-30a-do/dp/4224739)
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