# Silicon Carbide Schottky Diode, Single, 650 V, 63 A, 86 nC, DO-247LL

![Product image](https://novapart.co/image/farnell:4692848/)

**URL**: https://novapart.co/products/STPSC30G065WLY/silicon-carbide-schottky-diode-single-650-v-63-a
**SKU**: STPSC30G065WLY
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €2.9400
**Stock**: 200+
**Lead Time**: 107 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | DO-247LL |
| Diode Configuration | Single |
| Average Forward Current | 63A |
| Total Capacitive Charge | 86nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4692848/)

**STPSC30G065-Y** 

Datasheet 

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## Automotive 650 V, 30 A high surge silicon carbide power Schottky diode 

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A K<br>K<br>A<br>K<br>**----- End of picture text -----**<br>


## **Features** 

- AEC-Q101 qualified and PPAP capable 

- No reverse recovery charge in application current range 

- Switching behavior independent of temperature 

- High forward surge capability 

- Operating Tj from -55 °C to 175 °C 

- ECOPACK2 compliant component 

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DO-247 LL<br>**----- End of picture text -----**<br>


## **Applications** 

- OBC (On board battery chargers) 

- EV Charging station 

## **Product label** 

**==> picture [55 x 58] intentionally omitted <==**

## **Product status link** 

STPSC30G065-Y 

## **Description** 

The SiC diode STPSC30G065-Y, moulded in DO-247 LL with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design. 

|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|30 A|
|**VRRM**|650 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.30 V|



**DS14852** - **Rev 1** - **December 2024** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC30G065-Y Characteristics** 

**1 Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -55 °C to +175 °C)|||650|V|
|IF(RMS)|Forward rms current|||63|A|
|IF(AV)|Average forward current|Tc= 130 °C, δ = 1||30|A|
|IFRM|Repetitive peak forward current|Tc= 130 °C, Tj= 175 °C, δ = 0.1, fsw> 10 kHz||124|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|Tc= 25 °C|195|A|
||||Tc= 150 °C|156||
|||tp= 10 µs square|Tc= 25 °C|1100||
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Operating junction temperature range|||-55 to +175|°C|



**Table 2. Thermal resistance parameters** 

|**Smbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|**y**||**Typ.**|**Max.**||
|Rth(j-c)|Junction to case|0.60|0.85|°C/W|



For more information, please refer to the following application note: 

- AN5088 : Rectifiers thermal management, handling and mounting recommendations 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|25|300|µA|
|||Tj= 175 °C||-|150|1200||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 30 A|-|1.30|1.45|V|
|||Tj= 175 °C||-|1.49|1.70||



_1. Pulse test: tp = 10 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: P = 0.879 x IF(AV) + 0.027 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses: 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses on a power diode 

**DS14852** - **Rev 1** 

**page 2/10** 

**STPSC30G065-Y Characteristics** 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~es~~|**Min.**<br>~~es~~<br>es|**Typ.**<br>~~es~~<br>es|**Max.**<br>~~es~~<br>ee|**Unit**<br>~~es~~|
|---|---|---|---|---|---|---|
|QCj (1)<br>~~a~~|Total capacitive charge<br>~~ee~~|VR= 400 V<br>~~es~~|-<br>~~es~~<br>es|86<br>~~es~~<br> es|-<br>~~es~~<br> ee|nC<br>~~es~~|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|1890|-|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|-|120|-||



**Figure 1. Thermal transient impedance model circuit of the diode – Zth(j-c)** 

**Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)** 

|**Ref.**<br>~~ae~~|**Value (K/W)**<br>~~ee~~|**Ref.**|**Value (J/K)**|
|---|---|---|---|
|Rth1<br>~~ae ~~|19.43 m<br> ~~ee~~|Cth1|1.71 m|
|Rth2|175.31 m|Cth2|1.73 m|
|Rth3|184.79 m|Cth3|9.54 m|
|Rth4|169.61 m|Cth4|51.54 m|
|Rth5|50.39 m|Cth5|627.76 m|



**DS14852** - **Rev 1** 

**page 3/10** 

**STPSC30G065-Y Characteristics** 

## **1.1 Characteristics (curves)** 

**==> picture [497 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Forward voltage drop versus forward current  Figure 3. Reverse leakage current versus reverse voltage<br>(typical values) applied (typical values)<br>60 IF(A) IR(µA)<br>1.E+3<br>Pulse test : tp=380 µs Ta=25 °C<br>50 epee Ta=100 °C AHH SS<br>40 EEE TTaa=150 °C=175 °C TiSe) | 1.E+2 a ] TTjj=150 °C=175 °C e Seese<br>C O O 1.E+1 SeGeNNSSEREP Tj=100 °C eraseoe<br>30 YY 1.E+0 Tj=25 °C ene<br>20<br>Ta=-55 °C 1.E-1<br>10<br>VF(V) VR(V)<br>0 0.0 POPPE 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1.E-2100 FERRER 150 200 250 EEE 300 350 400 Et 450 500 550 600 650<br>**----- End of picture text -----**<br>


**Figure 4. Peak forward current versus case temperature (fSW > 10 kHz)** 

**Figure 5. Junction capacitance versus reverse voltage applied (typical values)** 

**==> picture [481 x 358] intentionally omitted <==**

**----- Start of picture text -----**<br>
250 IM(A) 2000 Cj (pF)<br>F=1 MHz<br>VOSC=30 mVRMS<br>=0.1 =| = wl Tj=25 °C<br>200<br>a 1500 SEAT ER<br>150 A FOOLCERS | RSMEIT<br>=0.3 1000<br>PT ET TTTSRENTT PLUaeNTE TTI|TTT<br>100 =0.5<br>p oe A LIN<br>500<br>50 poS EReet eA PLEPPSTTIINRTEINET E TTT<br>=1 =0.7<br>a EIN<br>0 aN TC(°C) 0 aEERIE UTE VR(V) TUT<br>0.1 1.0 10.0 100.0 1000.0<br>0 25 50 75 100 125 150 175<br>Relative variation of thermal impedance junction  Figure 7. Non-repetitive peak surge forward current Non-repetitive peak surge forward current<br>to case versus pulse duration versus pulse duration (sinusoidal waveform)<br>1.0 Zth(j-c)/Rth(j-c) 1.E+4 IFSM(A)<br>0.9<br>0.8<br>SEA HEE EI HH etree eee ements<br>0.7<br>EE THEE E HH 00st oe<br>0.6 Se eat aa mt HHH<br>0.5 PE PP 1.E+3 a |<br>Ta=25 °C<br>0.4 CTS Ea 7A Te, S S S<br>re<br>0.3<br>Ta=150 °C<br>0.2<br>EE THEE co<br>0.1 Single pulse<br>0.0 eree OSeo tp(s) 1.E+2 UI | TRUE p y tp(s)<br>1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E-5 1.E-4 1.E-3 1 LTT 1.E-2<br>**----- End of picture text -----**<br>


**Figure 6. Relative variation of thermal impedance junction to case versus pulse duration** 

**Figure 7. Non-repetitive peak surge forward current Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)** 

**DS14852** - **Rev 1** 

**page 4/10** 

**STPSC30G065-Y Characteristics** 

**Figure 8. Total capacitive charges versus reverse voltage applied (typical values)** 

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**----- Start of picture text -----**<br>
100 QCj(nC)<br>80<br>60<br>40<br>20<br>VR(V)<br>0<br>0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


**DS14852** - **Rev 1** 

**page 5/10** 

**STPSC30G065-Y Package information** ~~ooo~~ 

## **2** 

## **Package information** 

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 DO-247 LL package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.8 N·m 

- Maximum torque value: 1.0 N·m 

## **Figure 9. DO-247 LL package outline** 

**DS14852** - **Rev 1** 

**page 6/10** 

**STPSC30G065-Y Package information** 

_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ 

**Table 6. DO-247 LL package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches (for reference only)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|0.192|0.197|0.201|
|A1|2.31|2.41|2.51|0.090|0.095|0.099|
|A2|1.90|2.00|2.10|0.074|0.079|0.083|
|a|0.00||0.15|0.000||0.006|
|a'|0.00||0.15|0.000||0.006|
|b|1.16||1.29|0.045||0.051|
|b2|1.96||2.06|0.077||0.082|
|b6|||2.25|||0.089|
|c|0.59||0.66|0.023||0.026|
|D|20.90|21.00|21.10|0.822|0.827|0.831|
|D1|16.25|16.55|16.85|0.639|0.652|0.664|
|D2|1.05|1.20|1.35|0.041|0.047|0.054|
|E|15.70|15.80|15.90|0.618|0.622|0.626|
|E1|13.06|13.26|13.46|0.514|0.522|0.530|
|E2|4.90|5.00|5.10|0.192|0.197|0.201|
|E3|2.40|2.50|2.60|0.094|0.098|0.103|
|e|10.78|10.88|10.98|0.424|0.428|0.433|
|L|19.80|19.92|20.10|0.779|0.784|0.792|
|L1|3.93||4.46|0.154||0.176|
|M|0.35||0.95|0.013||0.038|
|P|3.50|3.60|3.70|0.137|0.142|0.146|
|P1|7.00||7.40|0.275||0.292|
|P2|2.40|2.50|2.60|0.094|0.098|0.103|
|Q|5.60||6.00|0.220||0.237|
|S|6.05|6.15|6.25|0.238|0.242|0.247|
|T|9.80||10.20|0.385||0.402|
|U|6.00||6.40|0.236||0.252|



**DS14852** - **Rev 1** 

**page 7/10** 

**STPSC30G065-Y Ordering information** 

## **3 Ordering information** 

## **Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC30G065WLY|YSTPSC30G065WL|DO-247 LL|5.9 g|30|Tube|



**DS14852** - **Rev 1** 

**page 8/10** 

**STPSC30G065-Y** 

## **Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Dec-2024|1|Initial release.|



**DS14852** - **Rev 1** 

**page 9/10** 

**STPSC30G065-Y** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2024 STMicroelectronics – All rights reserved 

**DS14852** - **Rev 1** 

**page 10/10** 



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