# Silicon Carbide Schottky Diode, Single Penta Anode, 650 V, 30 A, 86 nC, HU3PAK

![Product image](https://novapart.co/image/farnell:4785172/)

**URL**: https://novapart.co/products/STPSC30G065L2Y/silicon-carbide-schottky-diode-single-penta-anode
**SKU**: STPSC30G065L2Y
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €6.2100
**Stock**: 200+
**Lead Time**: 107 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | HU3PAK |
| Diode Configuration | Single Penta Anode |
| Average Forward Current | 30A |
| Total Capacitive Charge | 86nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4785172/)

**STPSC30G065L2Y** 

Datasheet 

**==> picture [62 x 34] intentionally omitted <==**

## Automotive 650 V, 30 A high surge silicon carbide power Schottky diode 

**==> picture [77 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
K<br>A A [A A A]<br>NC<br>NC<br>K<br>HU3PAK<br>A<br>A<br>A<br>A<br>A<br>**----- End of picture text -----**<br>


## **Features** 

- AEC-Q101 qualified and PPAP capable 

- No reverse recovery charge in application current range 

- Switching behavior independent of temperature 

- High forward surge capability 

- Operating Tj from -55 °C to 175 °C 

- SMD with top side cooling package (HU3PAK) 

- ECOPACK2 compliant component 

## **Applications** 

## **Product label** 

**==> picture [55 x 58] intentionally omitted <==**

## **Product status link** 

STPSC30G065L2Y 

|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|30 A|
|**VRRM**|650 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.30 V|



- OBC (On board battery chargers) 

- EV Charging station 

## **Description** 

The SiC diode STPSC30G065L2Y, housed in HU3PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design. 

**DS14984** - **Rev 1** - **June 2025** For further information, contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC30G065L2Y Characteristics** 

## **1 Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -55 °C to +175 °C)|||650|V|
|IF(RMS)|Forward rms current|||63|A|
|IF(AV)|Average forward current|Tc= 135 °C, δ = 1||30|A|
|IFRM|Repetitive peak forward current|Tc= 135 °C, Tj= 175 °C, δ = 0.1,<br>fsw> 10 kHz||129|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms<br>sinusoidal|Tc= 25 °C|200|A|
||||Tc= 150 °C|160||
|||tp= 10 µs square|Tc= 25 °C|1100||
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Operating junction temperature range|||-55 to +175|°C|



**Table 2. Thermal resistance parameters** 

|**Smbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|**y**||**Typ.**|**Max.**||
|Rth(j-c)|Junction to case|0.50|0.71|°C/W|



For more information, please refer to the following application note: 

- TN1378 : HU3PAK package mounting and thermal behavior 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|25|300|µA|
|||Tj= 175 °C||-|150|1200||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 30 A|-|1.30|1.45|V|
|||Tj= 175 °C||-|1.49|1.70||



_1. Pulse test: tp = 10 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: 

P = 0.879 x IF(AV) + 0.027 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses: 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses on a power diode 

**DS14984** - **Rev 1** 

**page 2/11** 

**STPSC30G065L2Y Characteristics** 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**<br>~~a ~~|**Parameter**<br> ~~a~~|**Test conditions**<br>~~es~~|**Min.**<br>~~es~~<br>ee|**Typ.**<br>~~es~~<br>ed|**Max.**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|---|---|---|
|QCj (1)|Total capacitive charge|VR= 400 V|-<br>ee|86<br>ed|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|1890|-|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|-|120|-||



**Figure 1. Thermal transient impedance model circuit of the diode – Zth(j-c)** 

**Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)** 

|**Ref.**<br>~~ee~~|**Value (K/W)**<br>~~ee~~|**Ref.**|**Value (J/K)**|
|---|---|---|---|
|Rth1<br>~~ee ~~|16.73 m<br> ~~ee~~|Cth1|0.85 m|
|Rth2|116.23 m|Cth2|1.34 m|
|Rth3|142.48 m|Cth3|2.43 m|
|Rth4|177.96 m|Cth4|7.57 m|
|Rth5|45.43 m|Cth5|99.02 m|



**DS14984** - **Rev 1** 

**page 3/11** 

**STPSC30G065L2Y Characteristics** 

## **1.1 Characteristics (curves)** 

**Figure 2. Forward voltage drop versus forward current (typical values)** 

**Figure 3. Reverse leakage current versus reverse voltage applied (typical values)** 

**==> picture [481 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(A) IR(µA)<br>60 1.E+3<br>Pulse test : tp=380 µs Ta=25 °C<br>50 oo Ta=100 °C a 1.E+2 ee eeeeeeeeeeeeeeeeeeee<br>FEEEEEEEEEE Ta=150 °C Sapo Sbggeeeeeees Tj=175 °C seeeeeere-<br>40 PTT TET y ETT Ta=175 °C WAAL | I tt | = Tj=150 °C a<br>1.E+1 Tj=100 °C<br>30 CEE CECE AACE RE Tj=25 °C Lie<br>PEE EEL ELL ELL TamLD, EEE EE 1.E+0 ——na SESEees a OeETcae ecLLLaa ee LLL<br>20<br>EEEEEEECEEYE Si pees Seeels<br>10 Ta=-55°C 1.E-1<br>VF(V) VR(V)<br>0 ACE 1.E-2 PEF 4<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 100 150 200 250 300 350 400 450 500 550 600 650<br>**----- End of picture text -----**<br>


**Figure 4. Peak forward current versus case temperature (fSW > 10 kHz)** 

**Figure 5. Junction capacitance versus reverse voltage applied (typical values)** 

**==> picture [482 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
IM(A) 2000 Cj (pF)<br>250<br>F=1 MHz<br>VOSC=30 mVRMS<br>Tj=25 °C<br>d=0.1<br>200150 AEE MJSERRE 1500 FTINI ToT<br>1000<br>d=0.3<br>o es NEE TET TE<br>100 d=0.5<br>KSSSEEREECEP P ERTRES 500 CCIEoT<br>50<br>d=1 d=0.7<br>SES S SSSR | aCCIEa aSST|<br>0 FHSS) TC(°C) 00.1 Coe 1.0 10.0 VR(V)100.0 1000.0<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


**Figure 6. Relative variation of thermal impedance junction to case versus pulse duration** 

**Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)** 

**==> picture [480 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth(j-c)/Rth(j-c) IFSM(A)<br>1.00.9 S oe oo 1.E+4 Se<br>0.8 a 2 ie ee ee eens ee TL<br>Set ee eee i een ee<br>0.7<br>SSS SSH ath een A<br>0.6 LT Te ETYT<br>0.5 rT TT ET AZ 1.E+3 PTT) lll<br>Ta=25 °C<br>CH nA acento<br>0.4<br>0.3 SeerT mech Sect een S ee weer aereeniii<br>TT TTTUT EAEV ePei e Ta=150 °C Poee<br>0.2<br>SH OL LLL See<br>Single pulse<br>0.1<br>0.0 Sereactioeee e EE tp(s) 1.E+2 | <= tp(s) |<br>1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E-5 1.E-4 1.E-3 1.E-2<br>**----- End of picture text -----**<br>


**DS14984** - **Rev 1** 

**page 4/11** 

**STPSC30G065L2Y Characteristics** 

**Figure 8. Total capacitive charges versus reverse voltage applied (typical values)** 

**==> picture [227 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 QCj(nC)<br>80<br>60<br>40<br>20<br>VR(V)<br>0<br>0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


**DS14984** - **Rev 1** 

**page 5/11** 

**STPSC30G065L2Y Package information** 

## **2 Package information** 

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 HU3PAK package information** 

- Epoxy meets UL94, V0 

## **Figure 9. HU3PAK package outline** 

**==> picture [157 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
×<br>DM00674007_2<br>**----- End of picture text -----**<br>


_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ 

**DS14984** - **Rev 1** 

**page 6/11** 

**STPSC30G065L2Y Package information** 

**Table 6. HU3PAK package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|
|**Ref.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|3.40|3.50|3.60|
|A1||0.05||
|b|0.50|0.60|0.70|
|b2|0.50|0.70|1.00|
|b3|0.80|0.90|1.00|
|c|0.40|0.50|0.60|
|c2|0.40|0.50|0.60|
|D|11.70|11.80|11.90|
|D1|8.80|8.955|9.10|
|E|13.90|14.00|14.10|
|E1|12.30|12.40|12.50|
|E2|7.75|7.80|7.85|
|e|BSC 1.27|||
|H|18.00|18.58|19.00|
|L|2.40|2.52|2.60|
|L1||3.05||
|L2|0.90|1.00|1.10|
|L3|BSC 0.26|||
|L4|0.075|0.125|0.175|
|L5|1.83|1.93|2.03|
|L6|2.14|2.24|2.34|
|L7|4.44|4.54|4.64|
|aaa||0.10||
|F1|2.90|3.00|3.10|
|F2|2.40|2.50|2.60|
|F3|0.25|0.35|0.45|
|N1|3.80|3.90|4.00|
|N2|0.25|0.30|0.45|
|N3|0.80|0.90|1.00|
|T|0.50|0.67|0.70|
|T2|9.18|9.38|9.43|
|θ1||0°|8°|
|θ2||0°|8°|



1. Package outline exclusive of any mold flashes dimensions. 

2. Package outline exclusive of burr dimensions. 

3. Max resin gate protrusion: 0.25 mm. 

4. The planarity of the package backside 50 micron max. 

5. BSC: basic spacing between centers 

**DS14984** - **Rev 1** 

**page 7/11** 

**STPSC30G065L2Y Package information** 

**Figure 10. HU3PAK recommended footprint (dimensions are in mm)** 

**==> picture [271 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.00 1.50<br>19.00<br>DM00674007_2<br>2.<br>4<br>6 X 1.2 5<br>7<br>14.70<br>7 X 0.90<br>**----- End of picture text -----**<br>


_Note: For packing details you can see technical note TN1173: Packing information for IPAD, protection, rectifiers, thyristors and AC Switches._ 

**DS14984** - **Rev 1** 

**page 8/11** 

**STPSC30G065L2Y Ordering information** 

## **3 Ordering information** 

## **Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC30G065L2Y|PSC30G065L2Y|HU3PAK|2.34 g|600|Tape and reel|



**DS14984** - **Rev 1** 

**page 9/11** 

**STPSC30G065L2Y** 

## **Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-Jun-2025|1|Initial release.|



**DS14984** - **Rev 1** 

**page 10/11** 

**STPSC30G065L2Y** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2025 STMicroelectronics – All rights reserved 

**DS14984** - **Rev 1** 

**page 11/11** 



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---

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