# Silicon Carbide Schottky Diode, Single, 650 V, 30 A, 86 nC, D2PAK HV

![Product image](https://novapart.co/image/farnell:4916122/)

**URL**: https://novapart.co/products/STPSC30G065G2Y/silicon-carbide-schottky-diode-single-650-v-30-a
**SKU**: STPSC30G065G2Y
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €3.8200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | D2PAK HV |
| Diode Configuration | Single |
| Average Forward Current | 30A |
| Total Capacitive Charge | 86nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4916122/)

**STPSC30G065G2Y** 

Datasheet 

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## 650 V, 30 A high surge silicon carbide power Schottky diode 

## **Features** 

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A K<br>**----- End of picture text -----**<br>


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K<br>A<br>A<br>NC<br>**----- End of picture text -----**<br>


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D²PAK HV<br>**----- End of picture text -----**<br>


- AEC-Q101 qualified and PPAP capable 

- No reverse recovery charge in application current range 

- Switching behaviour independent of temperature 

- High forward surge capability 

- Operating Tj from -55 °C to +175 °C 

- ECOPACK2 compliant component 

## **Application** 

- On board chargers 

- DC-DC converters 

## **Product label** 

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## **Product status link** 

STPSC30G065G2Y 

|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|30 A|
|**VRRM**|650 V|
|**Tj(max.)**|175 °C|
|**VF(typ.)**|1.30 V|



- PFC stage 

## **Description** 

The SiC diode STPSC30G065G2Y, available in D2PAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. 

Based on technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boost the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design. 

**DS14671** - **Rev 1** - **April 2024** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC30G065G2Y Characteristics** 

**1 Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -55 °C to +175 °C)|||650|V|
|IF(RMS)|Forward rms current|||63|A|
|IF(AV)|Average forward current|Tc= 135 °C, δ = 1||30|A|
|IFRM|Repetitive peak forward current|Tc= 135 °C, Tj= 175 °C, δ = 0.1, fsw> 10 kHz||129|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|Tc= 25 °C|200|A|
||||Tc= 150 °C|160||
|||tp= 10 µs square|Tc= 25 °C|1100||
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Operating junction temperature range|||-55 to +175|°C|



**Table 2. Thermal resistance parameters** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**Typ.**|**Max.**|**n**|
|Rth(j-c)|Junction to case|0.50|0.71|°C/W|



For more information, you can refer to the following application note: 

- AN5088 : Rectifiers thermal management, handling and mounting recommendations 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|25|300|µA|
|||Tj= 175 °C||-|150|1200||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 30 A|-|1.30|1.45|V|
|||Tj= 175 °C||-|1.49|1.70||



_1. Pulse test: tp = 10 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: 

P = 0.879 x IF(AV) + 0.027 x IF[2] (RMS) 

For more information, you can refer to the following application notes related to the power losses: 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses on a power diode 

**DS14671** - **Rev 1** 

**page 2/11** 

**STPSC30G065G2Y Characteristics** 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test conditions**<br>~~ee~~|**Min.**<br>ee|**Typ.**<br>ee|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|QCj (1)<br>~~a ~~|Total capacitive charge<br> ~~a~~|VR= 400 V<br>~~ee ~~|-<br> ee|86<br> ee|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|1890|-|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|-|120|-||



**Figure 1. Thermal transient impedance model circuit of the diode – Zth(j-c)** 

**Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)** 

|**Ref.**<br>~~es~~|**Value (K/W)**<br>~~es~~|**Ref.**<br>~~ee~~|**Value (J/K)**<br>~~ee~~|
|---|---|---|---|
|Rth1<br>~~es~~|18.71m<br>~~es~~|Cth1<br>~~ee~~|1.22m<br>~~ee~~|
|Rth2|139.81m|Cth2|1.43m|
|Rth3|195.71m|Cth3|5.91m|
|Rth4|118.51m|Cth4|28.94m|
|Rth5|27.25m|Cth5|427.97m|



**DS14671** - **Rev 1** 

**page 3/11** 

**STPSC30G065G2Y Characteristics** 

## **1.1 Characteristics (curves)** 

**Figure 2. Forward voltage drop versus forward current (typical values)** 

**Figure 3. Reverse leakage current versus reverse voltage applied (typical values)** 

**==> picture [481 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(A) IR(µA)<br>60 1.E+3<br>Pulse test : tp=380 µs Ta=25 °C<br>50 Co TTT Ta=100 °C any 45746 1.E+2 SeEEeEEEeeeeeeeeeneaen<br>Ta=150 °C Tj=175 °C<br>40 PTT TET y ETT Ta=175 °C MAXA || | | | = Tj=150 °C a<br>1.E+1 Tj=100 °C<br>30 Tj=25 °C<br>PETE TT EE LL amyLD, EE 1.E+0 onEe SSEisCe a eeELLLLae LLL<br>20 SSSSSS000800/ 40008000808 Ss ee es Seees<br>10 Ta=-55°C 1.E-1<br>VF(V) VR(V)<br>0 RECEP A 1.E-2 i<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 100 150 200 250 300 350 400 450 500 550 600 650<br>**----- End of picture text -----**<br>


**Figure 4. Peak forward current versus case temperature (fsw > 10 kHz)** 

**Figure 5. Junction capacitance versus reverse voltage applied (typical values)** 

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IM(A)<br>250<br>d=0.1<br>200150 RA RSEMJ<br>d=0.3 ee<br>pitt [tf]<br>100 P d=0.5 EER TN~<br>po tet NET<br>50<br>i d=1 d=0.7 ee ee<br>aS TC(°C) SN<br>0 FEEEELELELET [PSN]<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


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Cj (pF)<br>2000<br>F=1 MHz<br>VOSC=30 mVRMS<br>Tj=25 °C<br>1500 PETSNI ETTI TTT TTT<br>1000 PIESNE TIE ET)<br>TTI TPSI TAIT PTT<br>500<br>PL ETTIMIE EANTTI<br>PL TTTIME AMIE SSTT<br>0 CCIE VR(V)<br>0.1 1.0 CEI 10.0 CPS 100.0 Porn 1000.0<br>**----- End of picture text -----**<br>


**Figure 6. Relative variation of thermal impedance junction to case versus pulse duration** 

**Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)** 

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1.0 Z a th(j-c)/Rth(j-c) ee a<br>0.9<br>0.80.70.6 aeEoa AEC OH<br>0.5 See ee eae en mE<br>0.4<br>0.3<br>0.2<br>0.1 a Single pulse A<br>tp(s)<br>0.0 leLT TTT TPHEHE TTT TTT TTTHIE EF<br>1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IFSM(A)<br>1.E+4 a<br>1.E+3 eee | eeEe Ta=25 °C ETD<br>Ta=150 °C<br>S PS S<br>1.E+2 TA TTT tp(s)<br>1.E-5 1.E-4 1.E-3 1.E-2<br>**----- End of picture text -----**<br>


**DS14671** - **Rev 1** 

**page 4/11** 

**STPSC30G065G2Y Characteristics** 

**Figure 8. Total capacitive charges versus reverse voltage Figure 9. Thermal resistance junction to ambient versus applied (typical values) copper surface under tab (typical values)** 

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100 QCj(nC) Rth(j-a) (°C/W)<br>60<br>D²PAK HV<br>80 50 Epoxy printed board FR4, copper thickness = 70 µm<br>40<br>60<br>30<br>40<br>20<br>20<br>10<br>SCu(cm²)<br>VR(V)<br>0 0<br>0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br>


**DS14671** - **Rev 1** 

**page 5/11** 

**STPSC30G065G2Y Package information** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 D²PAK high voltage package information** 

- Epoxy meets UL94, V0 

**Figure 10. D²PAK high voltage package outline** 

**DS14671** - **Rev 1** 

**page 6/11** 

**STPSC30G065G2Y Package information** 

**Table 6. D²PAK high voltage package mechanical data** 

|**Rf**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|
|**e.**|**Min.**|**Typ.**|**Max.**|
|A|4.30|-|4.70|
|A1|0.03|-|0.20|
|C|1.17|-|1.37|
|D|8.95|-|9.35|
|e|4.98|-|5.18|
|E|0.50|-|0.90|
|F|0.78|-|0.85|
|F2|1.14|-|1.70|
|H|10.00|-|10.40|
|H1|7.40|-|7.80|
|J1|2.49|-|2.69|
|L|15.30|-|15.80|
|L1|1.27|-|1.40|
|L2|4.93|-|5.23|
|L3|6.85|-|7.25|
|L4|1.50|-|1.7|
|M|2.60|-|2.9|
|R|0.20|-|0.60|
|V|0°|-|8°|



**Figure 11. D²PAK high voltage footprint in mm** 

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10.58<br>7.46<br>15.95<br>5.09<br>3.40<br>1.20<br>5.08<br>**----- End of picture text -----**<br>


_Note: For package and tape orientation, reel and inner box dimensions and tape outline you can check TN1173._ 

**DS14671** - **Rev 1** 

**page 7/11** 

**STPSC30G065G2Y Package information** 

## **2.2 Creepage distance between anode and cathode** 

## **Table 7. Creepage distance between anode and cathode** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|CdA-K1|Minimum creepage distance between A and K1 (with top coating)|D²PAK HV|5.38|mm|
|CdA-K2|Minimum creepage distance between A and K2 (without top coating)||3.48||



_Note:_ 

_D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1)_ 

## **Figure 12. Creepage with top coating** 

## **Figure 13. Creepage without top coating** 

**DS14671** - **Rev 1** 

**page 8/11** 

**STPSC30G065G2Y Ordering information** 

## **3 Ordering information** 

## **Table 8. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC30G065G2Y|PSC30G065Y|D²PAK HV|1.48 g|1000|Tape and reel 13”|



**DS14671** - **Rev 1** 

**page 9/11** 

**STPSC30G065G2Y** 

## **Revision history** 

## **Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|25-Apr-2024|1|Initial release.|



**DS14671** - **Rev 1** 

**page 10/11** 

**STPSC30G065G2Y** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2024 STMicroelectronics – All rights reserved 

**DS14671** - **Rev 1** 

**page 11/11** 



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---

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