# Silicon Carbide Schottky Diode, Single, 1.2 kV, 2 A, 15.6 nC, TO-252 (DPAK)

![Product image](https://novapart.co/image/farnell:3498801RL/)

**URL**: https://novapart.co/products/STPSC2H12B2Y-TR/silicon-carbide-schottky-diode-single-12-kv-2-a
**SKU**: STPSC2H12B2Y-TR
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €0.9050
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-252 (DPAK) |
| Diode Configuration | Single |
| Average Forward Current | 2A |
| Total Capacitive Charge | 15.6nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3498801RL/)

**STPSC2H12-Y** 

Datasheet 

Automotive 1200 V, 2 A power Schottky silicon carbide diode 

## **Features** 

- AEC-Q101 qualified 

- PPAP capable 

- No or negligible reverse recovery 

- High forward surge capability 

- Operating Tj from -40 °C to 175 °C 

- Creepage distance of 3 mm as per IEC 60664-1 

- ECOPACK2 compliant component 

## **Product label** 

## **Applications** 

- Bootstrap function of SiC MOS-FETS 

- Snubber diode 

- Switching diode 

## **Description** 

**Product status link** STPSC2H12-Y 

|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|2 A|
|**VRRM**|1200 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.35 V|



The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Especially suited for use in boot strap, snubber circuits, or clamping functions of SiC MOS-FETs, the STPSC2H12-Y diode will help designers getting the best possible performance of their controlled switches in all conditions. This rectifier will enhance the performance of the targeted application. 

Its improved creepage distance ensures the compatibility with industrial and automotive creepage standards. 

**DS13118** - **Rev 1** - **September 2019** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC2H12-Y Characteristics** 

**1** 

## **Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**||**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -40|°C to +175 °C)|1200|V|
|IF(RMS)|Forward rms current||10|A|
|IF(AV)|Average forward current|Tc= 160 °C, DC(1)<br>Tc= 120 °C, DC(1)|2<br>5|A|
|IFRM|Repetitive peak forward current|Tc= 160 °C, Tj= 175 °C, δ = 0.1, fw> 10 kHz|9|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal, Tc= 25 °C|15|A|
|||tp= 10 ms sinusoidal, Tc= 150 °C|13||
|Tstg|Storage temperature range||-65 to +175|°C|
|Tj|Operating junction temperature range||-40 to +175|°C|



_1. Value based on Rth(j-c)max._ 

**Table 2. Thermal resistance parameters** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**Typ.**|**Max.**|**n**|
|Rth(j-c)|Junction to case|1.9|2.7|°C/W|



For more information, please refer to the following application note: 

- AN5088 : Rectifiers thermal management, handling and mounting recommendations 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|1|12|µA|
|||Tj= 150 °C||-|6|80||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 2 A|-|1.35|1.50|V|
|||Tj= 150 °C||-|1.75|2.25||



_1. Pulse test: tp = 10 ms, δ < 2%_ 

_2. Pulse test: tp = 500 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: 

P = 1.12 x IF(AV) + 0.565 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses: 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses on a power diode 

**DS13118** - **Rev 1** 

**page 2/10** 

**STPSC2H12-Y Characteristics (curves)** 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|QCj (1)|Total capacitive charge|VR= 800 V|-|15.6|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz<br>VR= 800 V, Tc= 25 °C, F = 1 MHz|-|190|-|pF|
||||-|13|-||



_1._ 

VR _Most accurate value for the capacitive charge:_ Qcj ( VR ) =  ∫ Cj () V dV 0 

## **1.1 Characteristics (curves)** 

**Figure 1. Forward voltage drop versus forward current (typical values)** 

**Figure 2. Reverse leakage current versus reverse voltage applied (typical values)** 

**==> picture [475 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 IF(A) 1.E+01 IR(µA)<br>Pulse test : tp = 500 µs<br>eee / [ee] V4ae eee=———= === = = = = = = = SE<br>3 See Ta = -40 °C Ta = 25 °C 1.E+00 eee eeeeee ee<br>/ see/ 4a Seer=====———— Tj = 150  >_<] ° C >> = se<br>1.E-01<br>2 Ta = 150 °C Tj = 25 °C<br>SHEE LE 1.E-02 Sone denne" S00neSnnne<br>1<br>PT Tt TAty 1.E-03 SaBREE2CeSe EEREee EEEee ERE ES a<br>ela ee eee<br>f VF(V) FEAF V R (V)<br>0 1.E-04<br>PT TEAL TTT FEREEEEEREEEEee<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>**----- End of picture text -----**<br>


**Figure 3. Peak forward current versus case temperature (fw > 10 kHz)** 

**==> picture [232 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 4. Junction capacitance versus reverse voltage<br>applied (typical values)<br>**----- End of picture text -----**<br>


**==> picture [474 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
IM(A)<br>35 δ = 0.1 200 Cj(pF)<br>| | [| | | [| fT 7 Tf<br>3025 S|pfeefpfft Tt eer he 180160 esaS V OSC  F T j === 30 mV 1 MHz 25 °C RMS<br>140<br>pj tif} Ppteetf ft eeeft NeEISrH<br>20 δ = 0.3 120<br>RRSESN 100 COCCIEHH SSCPSSTCECEea<br>15 δ = 0.5<br>. tee Let} t+} A 80 e T<br>ee Nee e<br>10 a ee ee 60 COE TINS<br>5 [4 δ = 1 δ = 0.7 [SSSS VA 40 EHH NH<br>oS SSS 20 Te ST TT<br>T C (°C) V R (V)<br>0 L | tt ytNNfy | | 0 a<br>0 25 50 75 100 125 150 175 0.1 1.0 10.0 100.0 1000.0 10000.0<br>**----- End of picture text -----**<br>


**DS13118** - **Rev 1** 

**page 3/10** 

**STPSC2H12-Y Characteristics (curves)** 

**==> picture [513 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. Relative variation of thermal impedance junction Figure 6. Non-repetitive peak surge forward current<br>to case versus pulse duration versus pulse duration (sinusoidal waveform)<br>Zth(j-c) /Rth(j-c) 1.E+03 IFSM(A)<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5 1.E+02<br>T a  = 25 °C<br>0.4<br>0.3<br>0.2 Ta = 150  ° C<br>Single pulse<br>0.1<br>0.0 t p(s) 1.E+01 t p(s)<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E-05 1.E-04 1.E-03 1.E-02<br>**----- End of picture text -----**<br>


**==> picture [513 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Thermal resistance junction to ambient versus<br>Figure 7. Total capacitive charges versus reverse voltage<br>copper surface under tab (typical values, epoxy printed<br>applied (typical values)<br>board FR4, eCu = 70 μm)<br>QCj(nC)<br>16 Rth(j-a) (°C/W)<br>100<br>14 DPAK HV<br>90<br>12 80<br>10 70<br>60<br>8<br>50<br>6<br>40<br>4 30<br>2 20<br>0 V R (V) 10 S Cu (cm²)<br>0 100 200 300 400 500 600 700 800 0<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br>


**DS13118** - **Rev 1** 

**page 4/10** 

**STPSC2H12-Y Package information** 

**2** 

## **Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 DPAK HV 2L package information** 

- Epoxy meets UL 94,V0 

- Cooling method: by conduction (C) 

## **Figure 9. DPAK HV 2L package outline** 

**DS13118** - **Rev 1** 

**page 5/10** 

**STPSC2H12-Y DPAK HV 2L package information** 

**Table 5. DPAK HV 2L package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches (for reference only)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.29|2.40|0.086|0.090|0.095|
|A1|0.90||1.10|0.035||0.044|
|A2|0.03||0.23|0.001||0.010|
|b|0.64|0.76|0.90|0.025|0.030|0.036|
|b4|5.20|5.10|5.40|0.204|0.201|0.213|
|c|0.45||0.60|0.017||0.024|
|c2|0.48||0.60|0.018||0.024|
|D|6.00||6.20|0.236||0.245|
|D1|4.60|4.70|4.80|0.181|0.185|0.189|
|E|6.40||6.60|0.251||0.260|
|E1|4.95|5.10|5.25|0.194|0.201|0.207|
|e|2.16|2.28|2.40|0.085|0.090|0.095|
|e1|4.40||4.60|0.173||0.182|
|H|9.35||10.10|0.368||0.398|
|L|1.00||1.50|0.039||0.060|
|L1|2.60|2.80|3.00|0.102|0.110|0.119|
|L2|0.65|0.80|0.95|0.025|0.031|0.038|
|V2|0°||8°|0°||8°|



**Figure 10. Footprint (dimensions in mm)** 

**==> picture [292 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.10 1.80 2.80<br>1.50<br>4.572<br>6.30<br>10.70<br>**----- End of picture text -----**<br>


**DS13118** - **Rev 1** 

**page 6/10** 

**STPSC2H12-Y DPAK HV 2L package information** 

## **2.1.1 Creepage distance between anode and cathode** 

## **Table 6. Creepage distance between anode and cathode** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|CdA-K|Minimum creepage distance between A and K|DPAK HV|3.0|mm|



_Note: DPAK HV creepage distance (anode to cathode) =3.0 mm min. (refer to IEC 60664-1)_ 

**DS13118** - **Rev 1** 

**page 7/10** 

**STPSC2H12-Y Ordering information** 

**3 Ordering information** 

## **Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC2H12B2Y-TR|PSC2 H12Y|DPAK HV|0.350 g|2500|Tape and reel|



**DS13118** - **Rev 1** 

**page 8/10** 

**STPSC2H12-Y** 

## **Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-Sep-2019|1|Initial release.|



**DS13118** - **Rev 1** 

**page 9/10** 

**STPSC2H12-Y** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2019 STMicroelectronics – All rights reserved 

**DS13118** - **Rev 1** 

**page 10/10** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc2h12b2y-tr/sic-schottky-diode-1-2kv-2a-to/dp/3498801RL)
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