# Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 20 A, 28.5 nC, TO-247

![Product image](https://novapart.co/image/farnell:2453463/)

**URL**: https://novapart.co/products/STPSC20H065CWY/silicon-carbide-schottky-diode-650v-series-dual
**SKU**: STPSC20H065CWY
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €3.0400
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Product Range:650V Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:20A; Total Capacitive Charge Qc:28.5nC; D

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | 650V |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 20A |
| Total Capacitive Charge | 28.5nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453463/)

## **STPSC20H065C-Y** 

## Automotive 650 V power Schottky silicon carbide diode 

**Datasheet** - **production data** 

## **Features** 

**==> picture [98 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
A1 (1)<br>K (2)<br>A2 (3)<br>A2<br>A1 [K]<br>TO-220AB<br>STPSC20H065CTY<br>A2<br>K<br>A1<br>TO-247<br>STPSC20H065CWY<br>**----- End of picture text -----**<br>


## **Description** 

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications. 

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. 

**Table 1. Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|2 x 10 A|
|VRRM|650 V|
|Tj(max)|175 °C|



- No or negligible reverse recovery 

- Switching behavior independent of temperature 

- Dedicated to PFC applications 

- High forward surge capability 

- AEC-Q101 qualified 

- ECOPACK[®] 2 compliant component 

- PPAP capable 

September 2014 

DocID026619 Rev 2 

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This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STPSC20H065C-Y** 

## **1 Characteristics** 

**Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage||650|V|
|IF(RMS)|Forward rms current||22|A|
|IF(AV)|Average forward current|Tc= 135 °C(1), DC, per diode|10|A|
|||Tc= 125 °C(2), DC, per device|20||
|IFSM|Surge non repetitive<br>forward current|tp= 10 ms sinusoidal, Tc= 25 °C<br>tp= 10 ms sinusoidal, Tc= 125 °C<br>tp= 10 µs square, Tc= 25 °C|90<br>80<br>470|A|
|IFRM|Repetitive peak forward<br>current|Tc= 135 °C(1), Tj= 175 °C,δ= 0.1|41|A|
|Tstg|Storage temperature range||-55 to +175|°C|
|Tj|Operating junction temperature(3)||-40 to +175|°C|



1. Value based on Rth(j-c) max (per diode) 

2. Value based on Rth(j-c) max (per device) 

3. dPtot---------------dTj < ------------------------Rth ( 1j – a **-** ) condition to avoid thermal runaway for a diode on its own heatsink 

**Table 3. Thermal resistance** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||||**Typ.**|**Max.**||
|Rth(j-c)|Junction to case per diode|Per diode|TO-247|1.25|1.5|°C/W|
||||TO-220AB||||
|||Total|TO-247|0.83|0.95||
||||TO-220AB||||
|Rth(c)|Coupling||||0.4||



When the two diodes 1 and 2 are used simultaneously: 

Δ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 

**Table 4. Static electrical characteristics per diode** 

|**Symbol**|**Parameter**|**Tests conditions**|**Tests conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|9|100|µA|
|||Tj= 150 °C||-|85|425||
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 10 A|-|1.56|1.75|V|
|||Tj= 150 °C||-|1.98|2.5||



1. Pulse test: tp = 5 ms, δ < 2% 

2. Pulse test: tp = 380 µs, δ < 2% 

To evaluate the conduction losses use the following equation: 

P = 1.35 x IF(AV) + 0.115 x IF2(RMS) 

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**Characteristics** 

**Table 5. Dynamic electrical characteristics per diode** 

|**Symbol**|**Parameter**|**Test conditions**<br>**Typ.**|**Typ.**<br>**Unit**|
|---|---|---|---|
|Qcj<br>(1)|Total capacitive charge|VR= 400 V<br>28.5|28.5<br>nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz<br>480|480<br>pF<br>48|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz<br>48||



**Figure 1. Forward voltage drop versus forward current (typical values per diode, low level)** 

**Figure 2. Forward voltage drop versus forward current (typical values per diode, high level)** 

**==> picture [445 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 IFM(A) 100 IFM(A)<br>18 Pulse test : tp=500µs 90 Pulse test : tp=500µs<br>16 S006a  ===>aAA252-70A 80 Poeeeof| | fT ft tffo tTto ft| ft[ ftJT ty7 tTJ JTTm[fT |<br>T a =25 °C<br>14 [| | [TF | ZY wy | | 70 a a<br>12 aee T ee a=100 °C EAAae { eoESZ\ oe Ta=150 °C 60 Seee ee T + a=25 +ec °C 4 72FEe e<br>10 tt Ta=175 °C 50 RS Ta=100  ° C<br>8 40<br>6 A 30 T a =150 °C A Ze<br>Et A I SS SH<br>4 aa a es es //,7/72 20 [a | ee| ee|ee| A ec | | tT ty tl tl<br>2 VFM(V) 10 Ta=175 °C V FM (V)<br>0 SEREAEEEE 0<br>EE | ESSaece<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 6 7 8<br>Figure 3. Reverse leakage current versus  Figure 4. Peak forward current versus case<br>reverse voltage applied  temperature (per diode)<br>(typical values per diode)<br>1.E+03 IR(µA) 80 I M (A)<br>T<br>δ = 0.1<br>SS === SSS 70 FF<br>1.E+021.E+01 eeEEEEEEEECE Tj=150  ° C Tj=175 °C EEREeee 6050 SyTRA LBL δ [=t][p][/T] tp<br>eerSSNS ere 40 oo δ = 0.3 SSN<br>1.E+00 δ = 0.5<br>30<br>SSS SSS SSS aeee<br>SERRE SASS 20 Se ee<br>1.E-01 S =55==ss=S==ale+ee Tj=25 ° += C  ====-=—— 10 == δ  = 1 δ = 0.7 SSS<br>VR(V)<br>1.E-02 LTT AY TEEPE Pririririiiit | 0 SNa TC(°C) SS<br>0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


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**Characteristics** 

**STPSC20H065C-Y** 

**Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode)** 

**Figure 6. Relative variation of thermal impedance junction to case versus pulse duration per diode** 

**==> picture [463 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 Cj (pF) 1.0 Zth(j-c)/Rth(j-c)<br>450400 V OSC FT== j =1 MHz30 mV25 °C RMS 0.90.8<br>350 0.7<br>300 0.6<br>250 0.5<br>200 0.4<br>150 0.3<br>100 0.2<br>50 V R (V) 0.1 Single pulse tp(s)<br>0 0.0<br>0.1 1.0 10.0 100.0 1000.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**Figure 7. Non-repetitive peak surge forward current versus pulse duration per diode (sinusoidal waveform)** 

**Figure 8. Total capacitive charges versus reverse voltage applied (typical values per diode)** 

**==> picture [463 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.E+03 IFSM(A) 32 Qcj (nC)<br>28<br>Ta=25 °C 24<br>20<br>Ta=125 °C<br>1.E+02 16<br>12<br>8<br>4<br>tp(s) VR (V)<br>1.E+01 0<br>1.E-05 1.E-04 1.E-03 1.E-02 0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


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**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: conduction (C) 

- Recommended torque value: 

   - TO-220AB 0.4 to 0.6 N·m, 

   - TO-247 0.55 N·m (1.0 N·m maximum) 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **Figure 9. TO-220AB dimension definitions** 

**==> picture [194 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
H2 A<br>Dia C<br>L5<br>L7<br>L6<br>L2<br>F2<br>F1 L9 D<br>L4<br>F<br>M<br>G1 E<br>G<br>**----- End of picture text -----**<br>


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**STPSC20H065C-Y** 

**Package information** 

**Table 6. TO-220AB dimension values** 

||**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|
|---|---|---|---|---|
|**Ref.**|**Dimensions**||||
||**Millimeters**||**Inches**||
||**Min.**|**Max.**|**Min.**|**Max.**|
|A|4.40|4.60|0.173|0.181|
|C|1.23|1.32|0.048|0.051|
|D|2.40|2.72|0.094|0.107|
|E|0.49|0.70|0.019|0.027|
|F|0.61|0.88|0.024|0.034|
|F1|1.14|1.70|0.044|0.066|
|F2|1.14|1.70|0.044|0.066|
|G|4.95|5.15|0.194|0.202|
|G1|2.40|2.70|0.094|0.106|
|H2|10|10.40|0.393|0.409|
|L2|16.4 typ.||0.645 typ.||
|L4|13|14|0.511|0.551|
|L5|2.65|2.95|0.104|0.116|
|L6|15.25|15.75|0.600|0.620|
|L7|6.20|6.60|0.244|0.259|
|L9|3.50|3.93|0.137|0.154|
|M|2.6 typ.||0.102 typ.||
|Diam.|3.75|3.85|0.147|0.151|



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**Package information** 

## **Figure 10. TO-247 dimension definitions** 

**==> picture [247 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
A Heat-sink plane<br>E<br>∅ P<br>S ∅ R<br>D<br>L2<br>L1<br>L b1<br>b2<br>1 2 3 b c 3 2 1<br>A1 BACK VIEW<br>e<br>**----- End of picture text -----**<br>


**Table 7. TO-247 dimension values** 

||**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|
|---|---|---|---|---|---|---|
|**Ref.**|**Dimensions**||||||
||**Millimeters**|||**Inches**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ**|**Max.**|
|A|4.85||5.15|0.191||0.203|
|A1|2.20||2.60|0.086||0.102|
|b|1.00||1.40|0.039||0.055|
|b1|2.00||2.40|0.078||0.094|
|b2|3.00||3.40|0.118||0.133|
|c|0.40||0.80|0.015||0.031|
|D(1)|19.85||20.15|0.781||0.793|
|E|15.45||15.75|0.608||0.620|
|e|5.30|5.45|5.60|0.209|0.215|0.220|
|L|14.20||14.80|0.559||0.582|
|L1|3.70||4.30|0.145||0.169|
|L2|18.50 typ.|||0.728 typ.|||
|∅P(2)|3.55||3.65|0.139||0.143|
|∅R|4.50||5.50|0.177||0.217|
|S|5.30|5.50|5.70|0.209|0.216|0.224|



1. Dimension D plus gate protrusion does not exceed 20.5 mm 

2. Resin thickness around the mounting hole is not less than 0.9 mm 

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**Ordering information** 

**STPSC20H065C-Y** 

## **3 Ordering information** 

**Table 8. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC20H065CTY|PSC20H065CTY|TO-220AB|1.86 g|50|Tube|
|STPSC20H065CWY|PSC20H065CWY|TO-247|4.43 g|30|Tube|



## **4 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|26-Jun-2014|1|First issue.|
|19-Sep-2014|2|Updated_Table 8_.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

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