# Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 20 A, 28.5 nC, TO-247

![Product image](https://novapart.co/image/farnell:2376464/)

**URL**: https://novapart.co/products/STPSC20H065CW/silicon-carbide-schottky-diode-650v-series-dual
**SKU**: STPSC20H065CW
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €2.4000
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Product Range:650V Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:20A; Total Capacitive Charge Qc:28.5nC; Diode Cas

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3 Pin |
| Product Range | 650V |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 20A |
| Total Capacitive Charge | 28.5nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2376464/)

## **STPSC20H065C** 

## 650 V power Schottky silicon carbide diode 

**Datasheet** - **production data** 

## **Features** 

**==> picture [98 x 239] intentionally omitted <==**

**----- Start of picture text -----**<br>
A1 (1)<br>K (2)<br>A2 (3) a b<br>A2<br>*<br>A1 [K]<br>TO-220AB<br>STPSC20H065CT<br>A2<br>e K<br>A1<br>TO-247<br>STPSC20H065CW<br>**----- End of picture text -----**<br>


## **Description** 

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. 

**Table 1. Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|2 x 10 A|
|VRRM|650 V|
|Tj(max)|175 °C|



- No or negligible reverse recovery 

- Switching behavior independent of temperature 

- Dedicated to PFC applications 

- High forward surge capability 

November 2013 

DocID023605 Rev 3 

1/9 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STPSC20H065C** 

## **1 Characteristics** 

**Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)** 

||**specified)**|**specified)**|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VRRM|Repetitive peak reverse voltage||650|V|
|IF(RMS)|Forward rms current||22|A|
|IF(AV)|Average forward current|Tc= 135 °C(1), DC, per diode|10|A|
|||Tc= 125 °C(2), per device|20||
|IFSM|Surge non repetitive forward<br>current|tp= 10 ms sinusoidal, Tc= 25 °C<br>tp= 10 ms sinusoidal, Tc= 125 °C<br>tp= 10 µs square, Tc= 25 °C|90<br>80<br>470|A|
|IFRM|Repetitive peak forward current|Tc= 135 °C(1), Tj= 175 °C,= 0.1|36|A|
|Tstg|Storage temperature range||-55 to +175|°C|
|Tj|Operating junction temperature(3)||-40 to +175|°C|



1. Value based on Rth(j-c) max (per diode) 

2. Value based on Rth(j-c) max (per device) 

3. dPtot---------------dTj  ------------------------Rth1j – a **-**  condition to avoid thermal runaway for a diode on its own heatsink 

**Table 3. Thermal resistance** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||||**Typ.**|**Max.**||
|Rth(j-c)|Junction to case per diode|Per diode|TO-247|1.25|1.5|°C/W|
||||TO-220AB||||
|||Total|TO-247|0.83|0.95||
||||TO-220AB||||
|Rth(c)|Coupling||||0.4||



When the two diodes 1 and 2 are used simultaneously: 

Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 

**Table 4. Static electrical characteristics per diode** 

|**Symbol**|**Parameter**|**Tests conditions**|**Tests conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|9|100|µA|
|||Tj= 150 °C||-|85|425||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 10 A|-|1.56|1.75|V|
|||Tj= 150 °C||-|1.98|2.5||



1. tp = 10 ms,  < 2% 

2. tp = 500 µs,  < 2% 

To evaluate the conduction losses use the following equation: 

P = 1.35 x IF(AV) + 0.115 x IF2(RMS) 

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DocID023605 Rev 3 

**STPSC20H065C** 

**Characteristics** 

**Table 5. Dynamic electrical characteristics per diode** 

|**Symbol**|**Parameter**|**Test conditions**<br>**Typ.**|**Typ.**<br>**Unit**|
|---|---|---|---|
|Qcj<br>(1)|Total capacitive charge|VR= 400 V<br>28.5|28.5<br>nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz<br>480|480<br>pF<br>48|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz<br>48||



**Figure 1. Forward voltage drop versus forward current (typical values per diode, low level)** 

**==> picture [214 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 IFM(A)<br>18 Pulse test : tp=500µs<br>Z|<br>Po aee ee eeA<br>16 a es A A<br>T a =25 °C<br>14 [|+++| | [fFtA| ZYHHxy | |<br>12 Ta=100 °C Ta=150 °C<br>re PLES) AY ||<br>10 a A YA A Ta=175 °C [|<br>8 Poyaa a eeeGPYAA297ae4 | [|<br>6<br>TS A<br>4 7<br>2 VFM(V)<br>0 aeT EI EEE<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br>


**Figure 2. Forward voltage drop versus forward current (typical values per diode, high level)** 

**==> picture [214 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 IFM(A)<br>90 Pulse test : tp=500µs<br>og [|<br>8070 potfofa a || CQtf| ftft ft| fttTQOTttT tT ft GOtT Ty97/2fT<br>60 Ta=25 °C<br>et ee FO<br>504030 ARE[|a[||| a T a =150  Ta=100  Qe °C ° C |GDPothf lAETA>”| A| tf tl ltl<br>2) 4<br>20 COTE teAAS<br>10 Ta=175 °C V FM (V)<br>0 aAT}aeCo]<br>0 1 2 3 4 5 6 7 8<br>**----- End of picture text -----**<br>


**Figure 3. Reverse leakage current versus reverse voltage applied (typical values per diode)** 

**Figure 4. Peak forward current versus case temperature, per diode** 

**==> picture [445 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.E+03 IR(µA) 80 I M (A)<br>T<br>δ = 0.1<br>70<br>1.E+021.E+01 EEEECEECere Tj=150  ° C EE Tj=175 °C EEE 6050 FtSE enAPL δ [=t][p][/T] tp<br>Seeeeee eTee es 40 oo δ = 0.3 SES<<br>1.E+00 δ = 0.5<br>30<br>SSS SSS eS Saas SS SSEHH<br>RRS S ESSERE 20 SSS<br>1.E-01 teree Tj=25 °C eh 10 Vo δ  = 1 ee δ = 0.7 Se e ee<br>VR(V)<br>1.E-02 LTT ASS TTTITTTitr titi titty 0 SSEPy TC(°C) eeESS<br>0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


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**Characteristics** 

**STPSC20H065C** 

**Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode)** 

**==> picture [214 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 Cj (pF)<br>450400 V OSC FT== j =1 MHz30 mV25 °C RMS<br>350<br>300<br>250<br>200<br>150<br>100<br>50 V R (V)<br>0<br>0.1 1.0 10.0 100.0 1000.0<br>**----- End of picture text -----**<br>


**Figure 6. Relative variation of thermal impedance junction to case versus pulse duration per diode** 

**==> picture [215 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0 Zth(j-c)/Rth(j-c)<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 Single pulse tp(s)<br>0.0<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**Figure 7. Non-repetitive peak surge forward current versus pulse duration per diode (sinusoidal waveform)** 

**Figure 8. Total capacitive charges versus reverse voltage applied (typical values per diode)** 

**==> picture [462 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.E+03 IFSM(A) 32 Qcj (nC)<br>28<br>Ta=25 °C 24<br>20<br>Ta=125 °C<br>1.E+02 16<br>12<br>8<br>4<br>tp(s) VR (V)<br>1.E+01 0<br>1.E-05 1.E-04 1.E-03 1.E-02 0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


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DocID023605 Rev 3 

**STPSC20H065C** 

**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: conduction (C) 

- Recommended torque value: 

   - TO-220AB 0.4 to 0.6 N·m, 

   - TO-247 0.55 N·m (1.0 N·m maximum) 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **Figure 9. TO-220AB dimension definitions** 

**==> picture [194 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
H2 A<br>Dia C<br>L5<br>L7<br>L6<br>L2<br>F2<br>F1 L9 D<br>L4<br>F<br>M<br>G1 E<br>G<br>**----- End of picture text -----**<br>


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**STPSC20H065C** 

**Package information** 

**Table 6. TO-220AB dimension values** 

||**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|
|---|---|---|---|---|
|**Ref.**|**Dimensions**||||
||**Millimeters**||**Inches**||
||**Min.**|**Max.**|**Min.**|**Max.**|
|A|4.40|4.60|0.173|0.181|
|C|1.23|1.32|0.048|0.051|
|D|2.40|2.72|0.094|0.107|
|E|0.49|0.70|0.019|0.027|
|F|0.61|0.88|0.024|0.034|
|F1|1.14|1.70|0.044|0.066|
|F2|1.14|1.70|0.044|0.066|
|G|4.95|5.15|0.194|0.202|
|G1|2.40|2.70|0.094|0.106|
|H2|10|10.40|0.393|0.409|
|L2|16.4 typ.||0.645 typ.||
|L4|13|14|0.511|0.551|
|L5|2.65|2.95|0.104|0.116|
|L6|15.25|15.75|0.600|0.620|
|L7|6.20|6.60|0.244|0.259|
|L9|3.50|3.93|0.137|0.154|
|M|2.6 typ.||0.102 typ.||
|Diam.|3.75|3.85|0.147|0.151|



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DocID023605 Rev 3 

**STPSC20H065C** 

**Package information** 

## **Figure 10. TO-247 dimension definitions** 

**==> picture [247 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
A Heat-sink plane<br>E<br>∅ P<br>S ∅ R<br>D<br>L2<br>L1<br>L b1<br>b2<br>1 2 3 b c 3 2 1<br>A1 BACK VIEW<br>e<br>**----- End of picture text -----**<br>


**Table 7. TO-247 dimension values** 

||**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|**Table 7. TO-247 dimension values**|
|---|---|---|---|---|---|---|
|**Ref.**|**Dimensions**||||||
||**Millimeters**|||**Inches**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ**|**Max.**|
|A|4.85||5.15|0.191||0.203|
|A1|2.20||2.60|0.086||0.102|
|b|1.00||1.40|0.039||0.055|
|b1|2.00||2.40|0.078||0.094|
|b2|3.00||3.40|0.118||0.133|
|c|0.40||0.80|0.015||0.031|
|D(1)|19.85||20.15|0.781||0.793|
|E|15.45||15.75|0.608||0.620|
|e|5.30|5.45|5.60|0.209|0.215|0.220|
|L|14.20||14.80|0.559||0.582|
|L1|3.70||4.30|0.145||0.169|
|L2|18.50 typ.|||0.728 typ.|||
|P(2)|3.55||3.65|0.139||0.143|
|R|4.50||5.50|0.177||0.217|
|S|5.30|5.50|5.70|0.209|0.216|0.224|



1. Dimension D plus gate protrusion does not exceed 20.5 mm 

2. Resin thickness around the mounting hole is not less than 0.9 mm 

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**Ordering information** 

**STPSC20H065C** 

## **3 Ordering information** 

**Table 8. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC20H065CT|STPSC20H065C|TO-220AB|1.86 g|50|Tube|
|STPSC20H065CW|STPSC20H065CW|TO-247|4.43 g|30|Tube|



## **4 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|31-Aug-2012|1|First issue.|
|10-Oct-2012|2|Added Max. values to_Table 3_.|
|07-Nov-2013|3|Updated_Figure 1_and_Figure 2_.|



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DocID023605 Rev 3 

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