# Silicon Carbide Schottky Diode, Single, 1.2 kV, 20 A, 103 nC, DO-247LL

![Product image](https://novapart.co/image/farnell:4224738/)

**URL**: https://novapart.co/products/STPSC20G12WLY/silicon-carbide-schottky-diode-single-12-kv-20-a
**SKU**: STPSC20G12WLY
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €5.0400
**Stock**: 25+
**Lead Time**: 53 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | DO-247LL |
| Diode Configuration | Single |
| Average Forward Current | 20A |
| Total Capacitive Charge | 103nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4224738/)

**STPSC20G12-Y** 

Datasheet 

## Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode 

**==> picture [85 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
A K<br>K<br>A<br>K<br>DO-247 LL<br>**----- End of picture text -----**<br>


## **Features** 

- AEC-Q101 qualified and PPAP capable 

- None or negligible reverse recovery 

- Switching behavior independent of temperature 

- Robust high voltage periphery 

- Operating Tj from -55 °C to 175 °C 

- Avalanche energy rated 

- ECOPACK2 compliant component 

## **Applications** 

- Boost PFC 

- HEV/EV OBC (On board battery chargers) 

- EV Charging station 

## **Description** 

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

## **Product label** 

**==> picture [55 x 58] intentionally omitted <==**

**Based on latest technology optimization, this diode has an improved forward surge current capability** , making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases. 

## **Product status link** 

STPSC20G12-Y 

|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|20 A|
|**VRRM**|1200 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.35 V|



**DS14117** - **Rev 1** - **November 2022** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC20G12-Y Characteristics** 

**1** 

## **Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -40 °C to +175 °C)|||1200|V|
|EAS(1)|Single pulse avalanche energy, starting Tj= 25 °C, IAS= 5.9 A, L = 10 mH|||174|mJ|
|IF(RMS)|Forward rms current|||64|A|
|IF(AV)|Average forward current|Tc= 150 °C, δ = 1||20|A|
|IFRM|Repetitive peak forward current|Tc= 150 °C, Tj= 175 °C, δ = 0.1, fsw> 10 kHz||76|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|Tc= 25 °C|180|A|
||||Tc= 150 °C|160||
|||tp= 10 µs square|Tc= 25 °C|1100||
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Operating junction temperature range|||-55 to +175|°C|



_1. Please refer to Figure 1._ 

**Table 2. Thermal resistance parameters** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**Typ.**|**Max.**|**n**|
|Rth(j-c)|Junction to case|0.45|0.60|°C/W|



For more information, please refer to the following application note: 

- AN5088 : Rectifiers thermal management, handling and mounting recommendations 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|10|150|µA|
|||Tj= 150 °C||-|33|500||
|||Tj= 175 °C|||75|||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 20 A|-|1.35|1.50|V|
|||Tj= 150 °C||-|1.75|2.10||
|||Tj= 175 °C|||1.90|||



_1. Pulse test: tp = 10 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: 

P = 0.924 x IF(AV) + 0.059 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses: 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses on a power diode 

**DS14117** - **Rev 1** 

**page 2/10** 

**STPSC20G12-Y** 

**Characteristics** 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Typ.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|QCj (1)<br>~~a~~|Total capacitive charge<br>~~ee~~|VR= 800 V<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|103<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|nC<br>~~ee~~|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|1548|-|pF|
|||VR= 800 V, Tc= 25 °C, F = 1 MHz|-|73|-||



_1._ 

**Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test)** 

**==> picture [273 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
i(t), v(t)<br>VCL_DUT<br>IAS —<br>IL IDUT<br>7”Ye<br>t<br>tp<br>**----- End of picture text -----**<br>


**Figure 2. Thermal transient impedance model circuit of the diode – Zth(j-c)** 

**Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)** 

|**Ref.**<br>~~es~~|**Value (K/W)**<br>~~ee~~|**Ref.**<br>~~ee~~|**Value (J/K)**|
|---|---|---|---|
|Rth1<br>~~es~~|17.9m<br>~~ee~~|Cth1<br>~~ee~~|2.55m|
|Rth2|138m|Cth2|1.15m|
|Rth3|169m|Cth3|8.60m|
|Rth4|99.1m|Cth4|46.7m|
|Rth5|26.1m|Cth5|625m|



**DS14117** - **Rev 1** 

**page 3/10** 

**STPSC20G12-Y Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**==> picture [234 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Forward voltage drop versus forward current<br>(typical values)<br>**----- End of picture text -----**<br>


**==> picture [245 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 4. Reverse leakage current versus reverse voltage<br>applied (typical values)<br>**----- End of picture text -----**<br>


**==> picture [480 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(A) IR(µA)<br>40 1.E+2<br>Pulse test : tp=380 µs<br>35<br>30 | eT TTaa=25 °C=-55 °C enIIDeaon AnaZZ TT 1.E+1 Seaaa>Prey t Tj=175 °C  SaaS aaa aSySSSre=a<br>Tj=150 °C<br>25 Ta=100 °C Tj=100 °C<br>Se A SS SS FR S SE<br>20 Ta=150 °C 1.E+0 Tj=25 °C<br>Ta=175 °C 7 j ee ee e<br>15 SE E A GAR PO Neer e er<br>e e 7 S aEH ee eeee EERE EERE<br>10 O A YL" Oe 1.E-1 KT262.62s2e2RR irtt+te tl]  Ree| ttt | tT Tt | |<br>5 SEA A 6 i a a a esSSS a es aHSSes ssSESEISES|<br>0 SE AEE VF(V) 1.E-2 CatPEPEtT tTrrrtT tT et tp VR(V)<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>**----- End of picture text -----**<br>


**Figure 5. Peak forward current versus case temperature** 

**Figure 6. Junction capacitance versus reverse voltage applied (typical values)** 

**==> picture [478 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
IM(A)<br>250 Cj (pF)<br>1600<br>F=1 MHz<br>200 annPt δ=0.1 | tT | ET tT | LPL 1400 SHAooIN ono VOSCT=30 mVj=25 °C RMS ]<br>rf} PRET | EL tt ttl 1200 ST<br>150 ee~ 1000 0CISCO<br>δ=0.3 ee I SETn<br>800<br>-_ — 0<br>100 δ=0.5<br>P oot | AE I 600 Cn<br>ee ee NS<br>SS EE 0<br>50 aa eeERee EESee TN 400 CT NCNI<br>δ=1 δ=0.7<br>Po SSee S E See A 200 oFISo<br>0 aN TC(°C) SN 0 0 Pern CoenCoteOr VR(V)<br>0 25 50 75 100 125 150 175 0.1 1.0 10.0 100.0 1000.0 10000.0<br>**----- End of picture text -----**<br>


**Figure 7. Relative variation of thermal impedance junction to case versus pulse duration** 

**Figure 8. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)** 

**==> picture [478 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth(j-c)/Rth(j-c) IFSM(A)<br>1.00.9 H E +77 1.E+4 |<br>a ee ee ee eee eee<br>0.8 [|[| TTTTTT ee]Yj a eea OOOO<br>0.7<br>eH Eo ot ee<br>0.6 oon oor<br>0.5 LLT| TTTUT TTTET oTYZ eT TTT] 1.E+3 eeoc a lll<br>0.4 SHHEA aa Ta=25 °C<br>YA ne<br>0.3<br>0.2 LCOCCI=|FHTTit | AITTAA oT TTITTT ellES St Fit Ta=150 °C slloSSSh<br>0.1 Single pulse<br>0.0 Ret eeim to fee ep HK ee EH HP Feb tp(s) UI 1.E+2 TH tp ao (s)<br>1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E-5 1.E-4 1.E-3 1.E-2<br>**----- End of picture text -----**<br>


**DS14117** - **Rev 1** 

**page 4/10** 

**STPSC20G12-Y Characteristics (curves)** 

**Figure 9. Total capacitive charges versus reverse voltage applied (typical values)** 

**==> picture [223 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
QCj(nC)<br>120<br>100<br>80<br>60<br>40<br>20<br>VR(V)<br>0<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br>


**DS14117** - **Rev 1** 

**page 5/10** 

**STPSC20G12-Y Package information** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 DO-247 LL package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.8 N·m 

- Maximum torque value: 1.0 N·m 

**Figure 10. DO-247 LL package outline** 

**DS14117** - **Rev 1** 

**page 6/10** 

**STPSC20G12-Y DO-247 LL package information** 

_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ 

**Table 6. DO-247 LL package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches (for reference only)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|0.192|0.197|0.201|
|A1|2.31|2.41|2.51|0.090|0.095|0.099|
|A2|1.90|2.00|2.10|0.074|0.079|0.083|
|a|0.00||0.15|0.000||0.006|
|a'|0.00||0.15|0.000||0.006|
|b|1.16||1.29|0.045||0.051|
|b2|1.96||2.06|0.077||0.082|
|b6|||2.25|||0.089|
|c|0.59||0.66|0.023||0.026|
|D|20.90|21.00|21.10|0.822|0.827|0.831|
|D1|16.25|16.55|16.85|0.639|0.652|0.664|
|D2|1.05|1.20|1.35|0.041|0.047|0.054|
|E|15.70|15.80|15.90|0.618|0.622|0.626|
|E1|13.06|13.26|13.46|0.514|0.522|0.530|
|E2|4.90|5.00|5.10|0.192|0.197|0.201|
|E3|2.40|2.50|2.60|0.094|0.098|0.103|
|e|10.78|10.88|10.98|0.424|0.428|0.433|
|L|19.80|19.92|20.10|0.779|0.784|0.792|
|L1|3.93||4.46|0.154||0.176|
|M|0.35||0.95|0.013||0.038|
|P|3.50|3.60|3.70|0.137|0.142|0.146|
|P1|7.00||7.40|0.275||0.292|
|P2|2.40|2.50|2.60|0.094|0.098|0.103|
|Q|5.60||6.00|0.220||0.237|
|S|6.05|6.15|6.25|0.238|0.242|0.247|
|T|9.80||10.20|0.385||0.402|
|U|6.00||6.40|0.236||0.252|



**DS14117** - **Rev 1** 

**page 7/10** 

**STPSC20G12-Y Ordering information** 

## **3 Ordering information** 

## **Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC20G12WLY|STPSC20G12WLY|DO-247LL|5.9 g|30|Tube|



**DS14117** - **Rev 1** 

**page 8/10** 

**STPSC20G12-Y** 

## **Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Nov-2022|1|Initial release.|



**DS14117** - **Rev 1** 

**page 9/10** 

**STPSC20G12-Y** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2022 STMicroelectronics – All rights reserved 

**DS14117** - **Rev 1** 

**page 10/10** 



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---

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