# Silicon Carbide Schottky Diode, Single Penta Anode, 1.2 kV, 20 A, 103 nC, HU3PAK

![Product image](https://novapart.co/image/farnell:4627958RL/)

**URL**: https://novapart.co/products/STPSC20G12L2Y/silicon-carbide-schottky-diode-single-penta-anode
**SKU**: STPSC20G12L2Y
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €6.0700
**Stock**: 50+
**Lead Time**: 325 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Average Forward Current | 20A |
| Total Capacitive Charge | 103nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4627958RL/)

**STPSC20G12L2Y** 

Datasheet 

**==> picture [135 x 36] intentionally omitted <==**

Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode 

**==> picture [77 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
K<br>A A [A A A]<br>NC<br>NC<br>K<br>HU [3] PAK<br>A<br>A<br>A<br>A<br>A<br>**----- End of picture text -----**<br>


## **Features** 

- AEC-Q101 qualified and PPAP capable 

- None or negligible reverse recovery 

- Switching behavior independent of temperature 

- Robust high voltage periphery 

- Operating Tj from -55 °C to 175 °C 

- SMD with top side cooling package (HU3PAK) 

- ECOPACK2 compliant component 

## **Applications** 

## **Product label** 

**==> picture [55 x 58] intentionally omitted <==**

- Vehicle to load converter 

- Wound rotor synchronous motor 

- HEV/EV OBC (On board battery chargers) 

- EV Charging station 

## **Description** 

## **Product status link** 

STPSC20G12L2Y 

|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|20 A|
|**VRRM**|1200 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.35 V|



The SiC diode, available in HU3PAK (SMD topside cooling package), is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turnoff behavior is independent of temperature. 

Based on the latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode will boost the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases. 

**DS14787** - **Rev 2** - **October 2024** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC20G12L2Y Characteristics** 

**1 Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -55 °C to +175 °C)|||1200|V|
|IF(RMS)|Forward rms current|||64|A|
|IF(AV)|Average forward current|Tc= 150 °C, δ = 1||20|A|
|IFRM|Repetitive peak forward current|Tc= 150 °C, Tj= 175 °C, δ = 0.1, fsw> 10 kHz||76|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|Tc= 25 °C|180|A|
||||Tc= 150 °C|160||
|||tp= 10 µs square|Tc= 25 °C|1100||
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Operating junction temperature range|||-55 to +175|°C|



**Table 2. Thermal resistance parameters** 

|**Smbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|**y**||**Typ.**|**Max.**||
|Rth(j-c)|Junction to case|0.45|0.60|°C/W|



For more information you can refer to: 

- TN1378: HU[3] PAK package mounting and thermal behavior. 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|10|150|µA|
|||Tj= 150 °C||-|33|500||
|||Tj= 175 °C|||75|||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 20 A|-|1.35|1.50|V|
|||Tj= 150 °C||-|1.75|2.10||
|||Tj= 175 °C|||1.90|||



_1. Pulse test: tp = 10 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: 

P = 0.924 x IF(AV) + 0.059 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses: 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses on a power diode 

**DS14787** - **Rev 2** 

**page 2/11** 

**STPSC20G12L2Y Characteristics** 

**Table 4. Dynamic electrical characteristics** 

|**Symbol**<br>~~a ~~|**Parameter**<br> ~~a ~~|**Test conditions**<br> ~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Typ.**<br>~~ee~~<br>~~es~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|QCj (1)|Total capacitive charge|VR= 800 V|-<br>~~ee ~~|103<br> ~~es~~|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|1548|-|pF|
|||VR= 800 V, Tc= 25 °C, F = 1 MHz|-|73|-||



**Figure 1. Thermal transient impedance model circuit of the diode – Zth(j-c)** 

**Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)** 

|**Ref.**<br>~~a~~|**Value (K/W)**<br>~~ee~~|**Ref.**<br>~~ee~~|**Value (J/K)**|
|---|---|---|---|
|Rth1<br>~~a~~|18.44 m<br>~~ee~~|Cth1<br>~~ee~~|1.63 m|
|Rth2|156.64 m|Cth2|1.46 m|
|Rth3|169.33 m|Cth3|6.03 m|
|Rth4|83.42 m|Cth4|19.5 m|
|Rth5|21.89 m|Cth5|214.37 m|



**DS14787** - **Rev 2** 

**page 3/11** 

**STPSC20G12L2Y Characteristics** 

## **1.1 Characteristics (curves)** 

**Figure 2. Forward voltage drop versus forward current Figure 3. Reverse leakage current versus reverse voltage (typical values) applied (typical values)** 

**==> picture [480 x 350] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(A) IR(µA)<br>40 1.E+2<br>Pulse test : tp=380 µs<br>35<br>— [fy _ Ta=-55 °C - TISAVTAA =—- [SSS] a<br>30 Ta=25 °C 1.E+1 Tj=175 °C<br>Po | MeN HX E Tj=150 °C eee<br>25 Ta=100 °C Tj=100 °C<br>20 Ta=150 °C 1.E+0 Tj=25 °C<br>SS Ta=175 °C [ls Neer* > aa ereat<br>15<br>10 7 A 1.E-1 || Lo —| | et, | et<br>eS<br>50 S a A P VF(V) 1.E-2 a292.622Cat CCC i TPa a CC ppa  ECE ee eee e2RRSS SESESERE eee RSSE EE VR(V)<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>Figure 5. Junction capacitance versus reverse voltage Junction capacitance versus reverse voltage<br>Figure 4. Peak forward current versus case temperaturePeak forward current versus case temperature<br>applied (typical values)<br>IM(A)<br>250 Cj (pF)<br>1600<br>F=1 MHz<br>200 Pt O a δ=0.1 | | EE| ET TT tt aeta] 1400 a BELIs VOSCT=30 mVj=25 °C RMS<br>rf PRET TT tt ttt td 1200 SS a<br>150 Py ot oP ~~PN E EET 1000 PTCIS TTT ET<br>δ=0.3 ee ee FCC SCE FeeCT<br>800<br>— — ST<br>100 δ=0.5<br>600<br>T eeSS— | ee{| eeSS S NT<br>50 ae δ=1 [See δ=0.7 SN 400 PATICI CoCIENTSTE To<br>P eSSeSSE eA 200 SSNO<br>0 0 25 50 75 100 125TC(°C) 150 NN> ~_ 175 00.1 CI A 1.0 SS 10.0 100.0 1000.0 V10000.0R(V)<br>**----- End of picture text -----**<br>


**Figure 5. Junction capacitance versus reverse voltage Junction capacitance versus reverse voltage applied (typical values)** 

**Figure 4. Peak forward current versus case temperaturePeak forward current versus case temperature** 

**Figure 6. Relative variation of thermal impedance junction to case versus pulse duration** 

**Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)** 

**==> picture [478 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0 Zth(j-c)/Rth(j-c) IFSM(A)<br>h n oo ao ooo 1.E+4 ————————<br>0.9 e l _— a eee<br>0.8<br>EEE AHA/ Co S a S<br>0.7 |<br>a A LT TTT EE<br>0.6 aA|<br>0.5 1.E+3<br>eS A A es | Ta=25 °C ee<br>0.4 eeTo)en Aa OE SSS Kt re ee ee eaee e ee<br>0.3 geet Ta=150 °C HH<br>0.2 Ty| se let ee SPelli S TPSSS<br>0.10.0 betesF Single pulse ET VARPP TE ETTaPET Tye tp(s) 1.E+21.E-5 a 1.E-4 a 1.E-3 e i tp(s)1.E-2<br>1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0<br>**----- End of picture text -----**<br>


**DS14787** - **Rev 2** 

**page 4/11** 

**STPSC20G12L2Y Characteristics** 

**Figure 8. Total capacitive charges versus reverse voltage applied (typical values)** 

**==> picture [224 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
QCj(nC)<br>120<br>100<br>80<br>60<br>40<br>20<br>VR(V)<br>0<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br>


**DS14787** - **Rev 2** 

**page 5/11** 

**STPSC20G12L2Y Package information** 

**2 Package information** 

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1** 

## **HU[3] PAK package information** 

- Epoxy meets UL94, V0 

**Figure 9. HU[3] PAK package outline** 

_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ 

**DS14787** - **Rev 2** 

**page 6/11** 

**STPSC20G12L2Y Package information** 

**Table 6. HU[3] PAK package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|
|**Ref.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|3.40|3.50|3.60|
|A1||0.05||
|b|0.50|0.60|0.70|
|b2|0.50|0.70|1.00|
|b3|0.80|0.90|1.00|
|c|0.40|0.50|0.60|
|c2|0.40|0.50|0.60|
|D|11.70|11.80|11.90|
|D1|8.80|8.955|9.10|
|E|13.90|14.00|14.10|
|E1|12.30|12.40|12.50|
|E2|7.75|7.80|7.85|
|e|BSC 1.27|||
|H|18.00|18.58|19.00|
|L|2.40|2.52|2.60|
|L1||3.05||
|L2|0.90|1.00|1.10|
|L3|BSC 0.26|||
|L4|0.075|0.125|0.175|
|L5|1.83|1.93|2.03|
|L6|2.14|2.24|2.34|
|L7|4.44|4.54|4.64|
|aaa||0.10||
|F1|2.90|3.00|3.10|
|F2|2.40|2.50|2.60|
|F3|0.25|0.35|0.45|
|N1|3.80|3.90|4.00|
|N2|0.25|0.30|0.45|
|N3|0.80|0.90|1.00|
|T|0.50|0.67|0.70|
|T2|9.18|9.38|9.43|
|θ1||0°|8°|
|θ2||0°|8°|



1. Package outline exclusive of any mold flashes dimensions. 

2. Package outline exclusive of burr dimensions. 

3. Max resin gate protrusion: 0.25 mm. 

4. The planarity of the package backside 50 micron max. 

5. BSC: basic spacing between centers 

**DS14787** - **Rev 2** 

**page 7/11** 

**STPSC20G12L2Y Package information** 

**Figure 10. HU[3] PAK recommended footprint (dimensions are in mm)** 

**==> picture [224 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.00 1.50<br>19.00<br>2.<br>4<br>6 X 1.2 5<br>7<br>14.70<br>7 X 0.90<br>**----- End of picture text -----**<br>


_Note: For packing details you can see technical note TN1173: Packing information for IPAD, protection, rectifiers, thyristors and AC Switches._ 

**DS14787** - **Rev 2** 

**page 8/11** 

**STPSC20G12L2Y Ordering information** 

## **3 Ordering information** 

## **Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC20G12L2Y|PSC20G12L2Y|HU3PAK|2.32 g|600|Tape and reel|



**DS14787** - **Rev 2** 

**page 9/11** 

**STPSC20G12L2Y** 

## **Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|03-Oct-2024|1|Initial release.|
|16-Oct-2024|2|UpdatedTN1378: HU3PAK package mounting and thermal behavior.|



**DS14787** - **Rev 2** 

**page 10/11** 

**STPSC20G12L2Y** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2024 STMicroelectronics – All rights reserved 

**DS14787** - **Rev 2** 

**page 11/11** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc20g12l2y/sic-schottky-diode-1-2kv-20a-hu3pak/dp/4627958RL)
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