# Silicon Carbide Schottky Diode, Single, 1.2 kV, 15 A, 94 nC, D2PAK-HV
**URL**: https://novapart.co/products/STPSC15H12G2Y-TR/silicon-carbide-schottky-diode-single-12-kv-15-a
**SKU**: STPSC15H12G2Y-TR
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €3.3500
**Stock**: 500+
**Lead Time**: 127 days (indicative)
## Description
Available until stocks are exhausted
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | D2PAK-HV |
| Diode Configuration | Single |
| Average Forward Current | 15A |
| Total Capacitive Charge | 94nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3748727RL/)
**STPSC15H12G2Y-TR**
Datasheet
## Automotive 1200 V, 15 A, silicon carbide power Schottky diode
## **Features**
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A1 K
K
A
A
NC
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## **D²PAK HV**
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
- ECOPACK2 compliant
**==> picture [159 x 86] intentionally omitted <==**
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Product label
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## **Applications**
- OBC
- DC/DC
- PFC
## **Description**
## **Product status link**
STPSC15H12G2Y-TR
|**Product summary**|**Product summary**|
|---|---|
|**IF(AV)**|15 A|
|**VRRM**|1200 V|
|**Tj (max.)**|175 °C|
|**VF (typ.)**|1.35 V|
This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D[2] PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.
The STPSC15H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
**DS13409** - **Rev 1** - **September 2020** For further information contact your local STMicroelectronics sales office.
www.st.com
**STPSC15H12G2Y-TR Characteristics**
**1**
## **Characteristics**
**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)**
|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage (Tj= -40 °C to +175 °C)||1200|V|
|IF(RMS)|Forward rms current||38|A|
|IF(AV)|Average forward current|Tc= 155 °C, DC current|15|A|
|IFRM|Repetitive peak forward current|Tc=155 °C, Tj= 175 °C, δ = 0.1|58|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal, Tc= 25 °C|105|A|
|||tp= 10 ms sinusoidal, Tc= 150 °C|90||
|Tstg|Storage temperature range||-65 to +175|°C|
|Tj|Operating junction temperature(1)||-40 to +175|°C|
_1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink._
**Table 2. Thermal resistance parameters**
|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**Typ.**|**Max.**|**n**|
|Rth(j-c)|Junction to case|0.45|0.6|°C/W|
**Table 3. Static electrical characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|7.5|90|µA|
|||Tj= 150 °C||-|45|600||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 15 A|-|1.35|1.50|V|
|||Tj= 150 °C||-|1.75|2.25||
_1. Pulse test: tp = 5 ms, δ < 2%_
_2. Pulse test: tp = 500 µs, δ < 2%_
To evaluate the conduction losses, use the following equation:
- P = 1.09 x IF(AV) + 0.0775 x IF[2] (RMS)
For more information, please refer to the following application notes related to the power losses:
- AN604: Calculation of conduction losses in a power rectifier
- AN4021: Calculation of reverse losses on a power diode
**DS13409** - **Rev 1**
**page 2/11**
**STPSC15H12G2Y-TR Characteristics**
**Table 4. Dynamic electrical characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|QCj (1)|Total capacitive charge|VR= 800 V|-|94|-|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|-|1200|-|pF|
|||VR= 800 V, Tc= 25 °C, F = 1 MHz|-|78|-||
_1._ VR _Most accurate value for the capacitive charge:_ Qcj VR = ∫ Cj V dV 0
**DS13409** - **Rev 1**
**page 3/11**
**STPSC15H12G2Y-TR Characteristics (curves)**
## **1.1 Characteristics (curves)**
**Figure 1. Forward voltage drop versus forward current Figure 2. Reverse leakage current versus reverse voltage ( typical values) applied (typical values)**
**==> picture [471 x 133] intentionally omitted <==**
**----- Start of picture text -----**
30 IF(A) 1.E+02 IR(µA)
Pulse test : t p = 500 µs
25 Ta = -40 °C 1.E+01
20 Tj= 150 °C
Ta = 25 ° C 1.E+00
15 T a = 150 °C Tj= 25 °C
1.E-01
10
1.E-02
5
VF(V) VR(V)
1.E-03
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200
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Figure 4. Junction capacitance versus reverse voltage
Figure 3. Peak forward current versus case temperature
applied (typical values)
140 IM(A)
T Cj(pF)
δ = 0.1 1200
120 F = 1 MHz
100 δ = tp/T tp 1000 VOSC T = 30 mVj = 25 °C RMS
80 800
δ = 0.3
60 δ = 0.5 600
40 400
20 δ = 1 δ = 0.7
Tc(°C) 200
0 VR(V)
0 25 50 75 100 125 150 175 0
0.1 1.0 10.0 100.0 1000.0 10000.0
Figure 5. Relative variation of thermal impedance junction Figure 6. Non- repetitive peak surge forward current
to case versus pulse duration versus pulse duration (sinusoidal waveform)
1.0 Zth(j-c)/Rth(j-c) 1.E+03 IFSM(A)
0.9 Ta = 25 ° C
0.8
0.7
0.6 Ta = 150 °C
0.5
1.E+02
0.4
0.3
0.2
Single pulse
0.1 t p (s)
0.0 tp(s)
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
1.E-05 1.E-04 1.E-03 1.E-02
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**DS13409** - **Rev 1**
**page 4/11**
**STPSC15H12G2Y-TR Characteristics (curves)**
**==> picture [513 x 202] intentionally omitted <==**
**----- Start of picture text -----**
Figure 8. Thermal resistance junction to ambient versus
Figure 7. Total capacitive charges versus reverse voltage
copper surface under tab for D²PAK package (typical
applied (typical values)
values)
100 Qcj(nC) Rth(j-a) (°C/W)
80
D²PAK HV
80 70 Epoxy printed board FR4, copper thickness = 35 µm
60
60 50
40
40
30
20 20
V R (V) 10 SCu(cm²)
0
0 100 200 300 400 500 600 700 800 0
0 5 10 15 20 25 30 35 40
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**DS13409** - **Rev 1**
**page 5/11**
**STPSC15H12G2Y-TR Package information**
**2 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
## **2.1 D²PAK high voltage package information**
- Epoxy meets UL94, V0
**Figure 9. D²PAK high voltage package outline**
**DS13409** - **Rev 1**
**page 6/11**
**STPSC15H12G2Y-TR D²PAK high voltage package information**
**Table 5. D²PAK high voltage package mechanical data**
|**Rf**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|
|**e.**|**Min.**|**Typ.**|**Max.**|
|A|4.30|-|4.70|
|A1|0.03|-|0.20|
|C|1.17|-|1.37|
|D|8.95|-|9.35|
|e|4.98|-|5.18|
|E|0.50|-|0.90|
|F|0.78|-|0.85|
|F2|1.14|-|1.70|
|H|10.00|-|10.40|
|H1|7.40|-|7.80|
|J1|2.49|-|2.69|
|L|15.30|-|15.80|
|L1|1.27|-|1.40|
|L2|4.93|-|5.23|
|L3|6.85|-|7.25|
|L4|1.5|-|1.7|
|M|2.6|-|2.9|
|R|0.20|-|0.60|
|V|0°|-|8°|
**Figure 10. D²PAK high voltage footprint in mm**
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10,58
7,46
15,95
5,10
3,40
1,20
5,08
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**DS13409** - **Rev 1**
**page 7/11**
**STPSC15H12G2Y-TR D²PAK high voltage package information**
## **2.1.1 Creepage distance between Anode and Cathode**
## **Table 6. Creepage distance between anode and cathode**
|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|CdA-K1|Minimum creepage distance between A and K1 (with top coating)|D²PAK HV|5.38|mm|
|CdA-K2|Minimum creepage distance between A and K2 (without top coating)||3.48||
_Note:_
_D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1)_
## **Figure 11. Creepage with top coating**
## **Figure 12. Creepage without top coating**
**DS13409** - **Rev 1**
**page 8/11**
**STPSC15H12G2Y-TR Ordering information**
**3 Ordering information**
## **Table 7. Ordering information**
|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC15H12G2Y-TR|SC15H12G2Y|D2PAK HV|1.48 g|1000|Tape and reel|
**DS13409** - **Rev 1**
**page 9/11**
**STPSC15H12G2Y-TR**
## **Revision history**
**Table 8. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-Sep-2020|1|First issue.|
**DS13409** - **Rev 1**
**page 10/11**
**STPSC15H12G2Y-TR**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
**DS13409** - **Rev 1**
**page 11/11**
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