# Silicon Carbide Schottky Diode, Single, 650 V, 10 A, 32 nC, PowerFLAT

![Product image](https://novapart.co/image/farnell:3527113/)

**URL**: https://novapart.co/products/STPSC10H065DLF/silicon-carbide-schottky-diode-single-650-v-10-a
**SKU**: STPSC10H065DLF
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €2.6400
**Stock**: 100+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 5 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | PowerFLAT |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 32nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3527113/)

**STPSC10H065DLF** 

Datasheet 

## 650 V, 10 A power Schottky silicon carbide diode 

## **Features** 

- Less than 1 mm height package 

- High creepage package 

- No or negligible reverse recovery 

- Temperature independent switching behavior 

- High forward surge capability 

- Very low drop forward voltage 

- Power efficient product 

- ECOPACK2 compliant component 

## **Applications** 

- Boost PFC 

- Bootstrap diode 

- LLC clamping function 

- High frequency inverter applications 

## **Description** 

## **Product status link** 

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STPSC10H065DLF<br>**----- End of picture text -----**<br>


|**Product summary**|**Product summary**|
|---|---|
|**Symbol**|**Value**|
|**IF(AV)**|10 A|
|**VRRM**|650 V|
|**VF(typ.)**|1.38 V|
|**T j(max.)**|175 °C|
|||
|**Product label**||



This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. 

Qualified in low profile package, the STPSC10H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains. 

**DS13179** - **Rev 1** - **December 2019** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPSC10H065DLF Characteristics** 

**1** 

## **Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|Tj= -40 °C to + 175 °C|650|V|
|IF(RMS)|Forward rms current||28|A|
|IF(AV)|Average forward current|Tc= 125 °C(1), DC|10|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal, Tc= 25 °C<br>tp= 10 ms sinusoidal, Tc= 125 °C<br>tp= 10 µs square, Tc= 25 °C|90<br>80<br>850|A|
|IFRM|Repetitive peak forward current|Tc= 125 °C(1), Tj= 175 °C, δ = 0.1, fW> 10 kHz|42|A|
|Tstg|Storage temperature range||-55 to +175|°C|
|Tj|Operating junction temperature range||-40 to +175|°C|



_1. Value based on Rth(j-c) max._ 

**Table 2. Thermal resistance parameters** 

|**Symbol**|**Parameter**|**Typ. value**|**Max. value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case|1.65|2.35|°C/W|



**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR(1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|9|100|µA|
|||Tj= 150 °C||-|85|425||
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 10 A|-|1.38|1.55|V|
|||Tj= 150 °C||-|1.60|1.95||



_1. tp = 10 ms, δ < 2%_ 

_2. tp = 500 μs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: P = 1.00 x IF(AV) + 0.095 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses: 

- AN604 : Calculation of conduction losses in a power rectifier 

- AN4021 : Calculation of reverse losses on a power diode 

**DS13179** - **Rev 1** 

**page 2/12** 

**STPSC10H065DLF Characteristics** 

## **Table 4. Dynamic electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Typ.**|**Unit**|
|---|---|---|---|---|
|Qcj(1)|Total capacitive charge|VR= 400 V|32|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|595|pF|
|||VR= 400 V, Tc= 25 °C, F = 1 MHz|55||
|_1._<br>_Most accurate value for the capacitive charge:_||Qcj<br>VR<br>=  ∫<br>0<br>VR<br>Cj<br>V<br>dV|||



**DS13179** - **Rev 1** 

**page 3/12** 

**STPSC10H065DLF Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**Figure 1. Forward voltage drop versus forward current Figure 2. Forward voltage drop versus forward current (typical values, low level) (typical values, high level)** 

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IF(A) IF(A)<br>20<br>80<br>18 Pulse test : t p =500µs Pulse test : tp=500µs<br>70<br>16 T a =25 °C<br>60 Ta=25 °C<br>14<br>12 T a =100 °C Ta=150 °C 50<br>10 40<br>8 Ta=175 °C 30 Ta=100 °C<br>6 Ta=150 °C<br>4 20 T a =175 °C<br>2 10<br>VF(V) VF(V)<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 3. Reverse leakage current versus reverse voltage Figure 4. Peak forward current versus case temperature<br>applied (typical values) (fw > 10 kHz)<br>IR(µA) 90 IM(A)<br>1.E+03 δ=0.1 T<br>80<br>1.E+02 T j=175 °C 70 δ=tp/T tp<br>T j =150 °C 60<br>1.E+01<br>50 δ=0.3<br>40 δ=0.5<br>1.E+00<br>30<br>1.E-01 T j=25  °C 20<br>δ=1 δ=0.7<br>10<br>V R (V)<br>T C (°C)<br>1.E-02 0<br>0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


**DS13179** - **Rev 1** 

**page 4/12** 

**STPSC10H065DLF Characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 5. Junction capacitance versus reverse voltage Figure 6. Relative variation of thermal impedance junction<br>applied (typical values) to case versus pulse duration<br>Cj(pF) Zth(j-c) /Rth(j-c)<br>600 1.0<br>F=1 MHz<br>VOSC=30 mVRMS 0.9<br>500 T j =25 °C<br>0.8<br>400 0.7<br>0.6<br>300 0.5<br>0.4<br>200<br>0.3<br>100 0.2<br>V R (V) 0.1 Single pulse t p (s)<br>0 0.0<br>0.1 1.0 10.0 100.0 1000.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 7. Non-repetitive peak surge forward current Figure 8. Total capacitive charges versus reverse voltage<br>versus pulse duration (sinusoidal waveform) applied (typical values)<br>IFSM(A) QCj(nC)<br>1.E+03<br>35<br>T a =25 °C<br>30<br>25<br>Ta=125 °C<br>20<br>1.E+02<br>15<br>10<br>5<br>t p(s) VR(V)<br>1.E+01 0<br>1.E-05 1.E-04 1.E-03 1.E-02 0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


**Figure 9. Thermal resistance junction to ambient versus copper surface under tab (typical values)** 

**==> picture [223 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
Rth(j-a) (°C/W)<br>125<br>epoxy printed board FR4, eCu = 70 µm PowerFlat_8X8<br>100<br>75<br>50<br>25<br>SCu(cm²)<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br>


**DS13179** - **Rev 1** 

**page 5/12** 

**STPSC10H065DLF Package information** 

**2** 

## **Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 PowerFLAT™ 8x8 HV package information** 

- Epoxy meets UL94, V0 

- Lead-free Package 

**Figure 10. PowerFLAT™ 8x8 HV package outline** 

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**==> picture [176 x 152] intentionally omitted <==**

**DS13179** - **Rev 1** 

**page 6/12** 

**STPSC10H065DLF PowerFLAT™ 8x8 HV package information** 

**Table 5. PowerFLAT™ 8x8 HV mechanical data** 

|**Rf**|**Dimensions (in mm)**|**Dimensions (in mm)**|**Dimensions (in mm)**|
|---|---|---|---|
|**e.**|**Min.**|**Typ.**|**Max.**|
|A|0.75|0.85|0.95|
|A1|0.00||0.05|
|A3|0.10|0.20|0.30|
|b|0.90|1.00|1.10|
|D|7.90|8.00|8.10|
|E|7.90|8.00|8.10|
|D2|7.10|7.20|7.30|
|E1|2.65|2.75|2.85|
|E2|4.25|4.35|4.45|
|e|2.00|||
|L|0.40|0.50|0.60|



**Figure 11. PowerFLAT™ 8x8 HV footprint** 

_Note: All dimensions are in millimeters._ 

**DS13179** - **Rev 1** 

**page 7/12** 

**STPSC10H065DLF PowerFLAT™ 8x8 HV packing information** 

## **2.2 PowerFLAT™ 8x8 HV packing information** 

## **Figure 12. PowerFLAT™ 8x8 HV tape** 

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**----- Start of picture text -----**<br>
P2 (2.0±0.1) P0 (4.0±0.1)<br>T (0.30±0.05) D0 ( 1.55±0.05)<br>E (1.75±0.1)<br>| S/o 6b OG SG OO O O -<br>a D1 ( 1.5 Min) ;<br>P1 (12.00±0.1) A0 (8.30±0.1)<br>K0 (1.10±0.1)<br>F (7.50±0.1)<br>W (16.00±0.3)<br>B0 (8.30±0.1)<br>**----- End of picture text -----**<br>


_Note: All dimensions are in millimeters._ 

**Figure 13. PowerFLAT™ 8x8 HV package orientation in carrier tape** 

**DS13179** - **Rev 1** 

**page 8/12** 

**STPSC10H065DLF PowerFLAT™ 8x8 HV packing information** 

**Figure 14. PowerFLAT™ 8x8 HV reel** 

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**==> picture [193 x 197] intentionally omitted <==**

_Note: All dimensions are in millimeters._ 

**DS13179** - **Rev 1** 

**page 9/12** 

**STPSC10H065DLF Ordering Information** 

**3 Ordering Information** 

## **Table 6. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC10H065DLF-TR|PSC10H065|PowerFLAT 8x8 HV|170 mg|3000|Reel|



**DS13179** - **Rev 1** 

**page 10/12** 

**STPSC10H065DLF** 

## **Revision history** 

**Table 7. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|04-Dec-2019|1|Initial release.|



**DS13179** - **Rev 1** 

**page 11/12** 

**STPSC10H065DLF** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2019 STMicroelectronics – All rights reserved 

**DS13179** - **Rev 1** 

**page 12/12** 



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