# Silicon Carbide Schottky Diode, Single, 650 V, 10 A, 26.4 nC, TO-262
**URL**: https://novapart.co/products/STPSC10C065RY/silicon-carbide-schottky-diode-single-650-v-10-a
**SKU**: STPSC10C065RY
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.3600
**Stock**: 50+
**Lead Time**: 274 days (indicative)
## Description
Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:10A; Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-262 |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 26.4nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2987012/)
**STPSC10C065-Y**
Datasheet
Automotive 650 V power Schottky silicon carbide diode
**==> picture [89 x 106] intentionally omitted <==**
**----- Start of picture text -----**
NC(1)
K(2)
A(3)
pe
K
A
NC [K]
I [2] PAK
**----- End of picture text -----**
## **Features**
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Recommended to PFC applications
- PPAP capable
- ECOPACK[®] 2 compliant component
## **Description**
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.
## **Product status link** ~~Ts~~
|**Product summary**
~~re~~|**Product summary**
~~re~~|
|---|---|
|**IF(AV)**|10 A|
|**VRRM**|650 V|
|**Tj (max.)**|175 °C|
**DS12402** - **Rev 2** - **September 2018** For further information contact your local STMicroelectronics sales office.
www.st.com
**STPSC10C065-Y Characteristics**
**1**
## **Characteristics**
**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)**
|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|Tjfrom -40 °C to 175 °C|650|V|
|IF(RMS)|Forward rms current||22|A|
|IF(AV)|Average forward current|Tc= 120 °C, DC current(1)|10|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal, Tc= 25 °C|85|A|
|||tp= 10 ms sinusoidal, Tc= 125 °C|75||
|||tp= 10 µs square, Tc= 25 °C|500||
|Tstg|Storage temperature range||-55 to +175|°C|
|Tj|Operating junction temperature(2)||-40 to +175|°C|
_1. Value based on Rth(j-c) max._
_2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink._
**Table 2. Thermal resistance parameters**
|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**Typ.**|**Max.**|**n**|
|Rth(j-c)|Junction to case|1.3|2.0|°C/W|
**Table 3. Static electrical characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR(1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|9|100|µA|
|||Tj= 150 °C||-|85|425||
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 10 A|-|1.56|1.75|V|
|||Tj= 150 °C||-|1.98|2.50||
_1. Pulse test: tp = 10 ms, δ < 2%_
_2. Pulse test: tp = 500 µs, δ < 2%_
To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) + 0.12 x IF[2] (RMS)
**Table 4. Dynamic electrical characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Typ.**|**Unit**|
|---|---|---|---|---|
|QCj(1)|Total capacitive charge|VR= 400 V|26.4|nC|
|Cj|Total capacitance|VR= 0 V, Tc= 25 °C, F = 1 MHz|480|pF|
|||VR= 300 V, Tc= 25 °C, F = 1 MHz|47||
_1._
VR _Most accurate value for the capacitive charge:_ Qcj VR = ∫ Cj V dV 0
**DS12402** - **Rev 2**
**page 2/9**
**STPSC10C065-Y Characteristics (curves)**
## **1.1 Characteristics (curves)**
**Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level) current (typical values, high level)**
**==> picture [448 x 149] intentionally omitted <==**
**----- Start of picture text -----**
IF(A) IF(A)
20 100
Pulse test : tp = 500 µs Pulse test : tp = 500 µs
16 80
Ta = 100 °C
12 60
Ta = 150 °C
8 Ta = 175 °C 40 T a = 25 °C
T a = 25 °C Ta = 100 °C
4 20 Ta = 150 °C
V F (V) T a = 175 °C VF(V)
0 Ta = -40 °C 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 6 7 8
**----- End of picture text -----**
**==> picture [463 x 206] intentionally omitted <==**
**----- Start of picture text -----**
Figure 3. Reverse leakage current versus reverse Figure 4. Peak forward current versus case
voltage applied (typical values) temperature
IR(µA) 80 IM(A)
T
1.E+03 δ = 0.1
70
δ [=tp/T] tp
1.E+02
60
1.E+01 T j = 175 °C
50
Tj = 150 ° C δ = 0.3
1.E+00
40
δ = 0.5
1.E-01 30
1.E-02 20
1.E-03 Tj = 25 °C VR(V) 10 δ = 1 δ = 0.7 TC( ° C)
1.E-04 0
0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 25 50 75 100 125 150 175
**----- End of picture text -----**
**DS12402** - **Rev 2**
**page 3/9**
**STPSC10C065-Y Characteristics (curves)**
**Figure 5. Junction capacitance versus reverse Figure 6. Relative variation of thermal impedance voltage applied (typical values) junction to case versus pulse duration**
**==> picture [220 x 144] intentionally omitted <==**
**----- Start of picture text -----**
Cj(pF)
500
F = 1 MHz
V OSC = 30 mV RMS
Tj = 25 °C
400
300
200
100
V R (V)
0
0.1 1.0 10.0 100.0 1000.0
**----- End of picture text -----**
**==> picture [219 x 143] intentionally omitted <==**
**----- Start of picture text -----**
Zth(j-c) /Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 Single pulse
0.1 t p (s)
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
**----- End of picture text -----**
**Figure 7. Non-repetitive peak surge forward current Figure 8. Total capacitive charges versus reverse versus pulse duration (sinusoidal waveform) voltage applied (typical values)**
**==> picture [452 x 154] intentionally omitted <==**
**----- Start of picture text -----**
IFSM(A) QCj(nC)
1.E+03 30
25
T a = 25 °C
20
Ta = 125 °C
15
1.E+02
10
5
t p(s) V R (V)
0
1.E+01
0 50 100 150 200 250 300 350 400
1.E-05 1.E-04 1.E-03 1.E-02
**----- End of picture text -----**
**DS12402** - **Rev 2**
**page 4/9**
**STPSC10C065-Y Package information**
**2 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark.
## **2.1 I²PAK package information**
- Epoxy meets UL 94,V0
- Cooling method: by conduction (C)
**Figure 9. I²PAK package outline**
**==> picture [53 x 64] intentionally omitted <==**
**DS12402** - **Rev 2**
**page 5/9**
**STPSC10C065-Y I²PAK package information**
## **Table 5. I²PAK package mechanical data**
||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|
|**Ref.**|**Millimeters**||**Inches (for reference only)**||
||**Min.**|**Max.**|**Min.**|**Max.**|
|A|4.40|4.60|0.173|0.181|
|A1|2.40|2.72|0.094|0.107|
|b|0.61|0.88|0.024|0.035|
|b1|1.14|1.70|0.044|0.067|
|c|0.49|0.70|0.019|0.028|
|c2|1.23|1.32|0.048|0.052|
|D|8.95|9.35|0.352|0.368|
|e|2.40|2.70|0.094|0.106|
|e1|4.95|5.15|0.195|0.203|
|E|10.00|10.40|0.394|0.409|
|L|13.00|14.00|0.512|0.551|
|L1|3.50|3.93|0.138|0.155|
|L2|1.27|1.40|0.050|0.055|
**DS12402** - **Rev 2**
**page 6/9**
**STPSC10C065-Y Ordering information**
**3 Ordering information**
## **Table 6. Ordering information**
|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPSC10C065RY|PSC10C065RY|I²PAK|1.5 g|50|Tube|
**DS12402** - **Rev 2**
**page 7/9**
**STPSC10C065-Y**
## **Revision history**
**Table 7. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-Feb-2018|1|First issue.|
|24-Sep-2018|2|Corrected cover image.|
**DS12402** - **Rev 2**
**page 8/9**
**STPSC10C065-Y**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
**DS12402** - **Rev 2**
**page 9/9**
## Links
- [View this product on Novapart](https://novapart.co/products/STPSC10C065RY/silicon-carbide-schottky-diode-single-650-v-10-a)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stpsc10c065ry/silicon-carbide-schottky-diode/dp/2987012)
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