# Small Signal Schottky Diode, Single, 30 V, 8 A, 570 mV, 100 A, 150 °C

![Product image](https://novapart.co/image/farnell:2325959RL/)

**URL**: https://novapart.co/products/STPS8L30DEE-TR/small-signal-schottky-diode-single-30-v-8-a-570-mv
**SKU**: STPS8L30DEE-TR
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.5090
**Stock**: 200+
**Lead Time**: 120 days (indicative)

## Description

Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):8A; Forward Voltage VF Max:570mV; Forward Surge Current Ifsm Max:100A; Operating Temper

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | STPS8 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SMD |
| Diode Configuration | Single |
| Forward Voltage Max | 570mV |
| Forward Surge Current | 100A |
| Reverse Recovery Time | - |
| Average Forward Current | 8A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2325959RL/)

**STPS8L30DEE** 

Datasheet 

## 30 V, 8 A power Schottky rectifier 

## **Features** 

- Very low conduction losses 

- Negligible switching losses 

- Extremely fast switching 

- Low thermal resistance 

- Avalanche capacity specified 

- High junction temperature capability 

- • ECOPACK2 compliant 

## **Application** 

- Cordless appliance 

## **Product status link** 

STPS8L30DEE 

- SSD 

- Battery charger 

- Telecom power 

- DC / DC converter 

|**Product summary**|**Product summary**|
|---|---|
|**Symbol**|**Value**|
|**IF(AV)**|8 A|
|**VRRM**|30 V|
|**Tj (max.)**|150 °C|
|**VF (typ.)**|0.34 V|



- Polarity protection 

- Freewheeling 

## **Description** 

This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC converters. 

Packaged in PowerFLAT, this device is intended for use in low voltage, high frequency, inverters, free-wheeling, by-pass diode and polarity protection applications.Its low profile was especially designed to be used in applications with space-saving constraints. 

**DS9066** - **Rev 2** - **April 2022** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STPS8L30DEE Characteristics** 

**1 Characteristics** 

**Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage|||30|V|
|IF(RMS)|Forward rms current|||15|A|
|IF(AV)|Average forward current, δ = 0.5 square wave||Tc= 130 °C|8|A|
|IFSM|Surge non repetitive forward current||tp= 10 ms sinusoidal|100|A|
|PARM|Repetitive peak avalanche power|tp= 10 µs|Tc= 125 °C|200|W|
|Tstg|Storage temperature range|||-65 to +150|°C|
|Tj|Maximum operating junction temperature|||+150|°C|



**Table 2. Thermal resistance parameters** 

|**Symbol**|**Parameter**|**Max.**<br>**value**|**Unit**|
|---|---|---|---|
|Rth(j-c)|Junction to case|4|°C/W|



For more information, please refer to the following application note: 

- AN5088: Rectifiers thermal management, handling and mounting recommendations 

**Table 3. Static electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR(1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-||1000|µA|
|||Tj= 125 °C||-|70|140|mA|
|VF(2)|Forward voltage drop|Tj= 25 °C|IF= 8 A|-||0.50|V|
|||Tj= 125 °C||-|0.34|0.39||
|||Tj= 25 °C|IF= 16 A|-||0.57||
|||Tj= 125 °C||-|0.44|0.51||



_1. Pulse test: tp = 5 ms, δ < 2%_ 

_2. Pulse test: tp = 380 µs, δ < 2%_ 

To evaluate the conduction losses, use the following equation: 

P = 0.27 x IF(AV) + 0.015 x IF[2] (RMS) 

For more information, please refer to the following application notes related to the power losses: 

- AN604: Calculation of conduction losses in a power rectifier 

- AN4021: Calculation of reverse losses in a power diode 

**DS9066** - **Rev 2** 

**page 2/9** 

**STPS8L30DEE Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**Figure 1. Average forward power dissipation versus average forward current** 

**==> picture [222 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
PF(AV)(W)<br>6<br>δ = 0.2 δ = 0.5 δ = 1<br>5 δ = 0.1<br>δ = 0.05<br>4<br>3<br>2 T<br>1<br>IF(AV)(A) δ [=tp/T] tp<br>0<br>0 2 4 6 8 10 12<br>**----- End of picture text -----**<br>


**Figure 2. Average forward current versus ambient temperature(δ = 0.5)** 

**==> picture [222 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
IF(AV)(A)<br>10<br>Rth(j-a) =Rth(j-c)<br>8<br>6<br>4<br>T<br>2<br>δ [=tp/T] tp T amb (°C)<br>0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 3. Normalized avalanche power derating versus pulse duration** 

**==> picture [224 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
PARM(tp)<br>1 PARM(10 µs)<br>0.1<br>0.01<br>t p(µs)<br>0.001<br>1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 4. Relative variation of thermal impedance junction to case versus pulse duration** 

**==> picture [222 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth(j-c) /Rth(j-c)<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 Single pulse tp(s)<br>0.0<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**==> picture [513 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage<br>applied (typical values) applied (typical values)<br>C(pF)<br>IR(mA) 10000<br>1.E+03<br>1.E+02 Tj = 150 °CTj = 125 °C VOSCFT==j=25 °C30 mV1 MHzRMS<br>1.E+01 T j  = 100 °C<br>Tj = 75 °C 1000<br>1.E+00<br>Tj = 50 °C<br>1.E-01 Tj = 25 °C<br>VR(V) VR(V)<br>1.E-02<br>0 5 10 15 20 25 30 100<br>1 10 100<br>**----- End of picture text -----**<br>


**DS9066** - **Rev 2** 

**page 3/9** 

**STPS8L30DEE Characteristics (curves)** 

**==> picture [513 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Thermal resistance junction to ambient versus<br>Figure 7. Forward voltage drop versus forward current<br>copper surface under tab<br>IFM(A)<br>100.0 Rth(j-a) (°C/W)<br>250<br>(Maximum values)Tj=125  ° C epoxy printed board FR4, copper thickness=35µm PowerFLAT (3.3x3.3)<br>200<br>10.0 (Typ T ical values j=125 °C )<br>Tj=25 °C<br>(Maximum values) 150<br>1.0 100<br>50<br>VFM(V) S Cu (cm²)<br>0.1<br>0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>0 1 2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br>


**DS9066** - **Rev 2** 

**page 4/9** 

**STPS8L30DEE Package information** 

**2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 PowerFLAT 3.3x3.3 mm package information** 

**Figure 9. PowerFLAT 3.3x3.3 mm package outline** 

**Table 4. PowerFLAT 3.3x3.3 mm mechanical data** 

|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|
||**Millimeters**|||
||**Min.**|**Typ.**|**Max.**|
|A|0.90||1.10|
|A3||0.20||
|b|0.29||0.44|
|D|3.20||3.40|
|D2|1.61||1.82|
|E|3.20||3.40|
|E2|2.19||2.39|
|E3|1.54||1.74|
|e|0.55||0.75|
|L|0.30||0.50|
|L1|0.50||0.70|



**DS9066** - **Rev 2** 

**page 5/9** 

**STPS8L30DEE PowerFLAT 3.3x3.3 mm package information** 

**Figure 10. Recommended footprint (dimensions are in mm)** 

**DS9066** - **Rev 2** 

**page 6/9** 

**STPS8L30DEE Ordering information** 

## **3 Ordering information** 

## **Table 5. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STPS8L30DEE-TR|PS8L30|PowerFLAT 3.3 x 3.3|34 mg|3000|Tape and 13" reel|



**DS9066** - **Rev 2** 

**page 7/9** 

**STPS8L30DEE** 

## **Revision history** 

**Table 6. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|09-Sep-2012|1|First issue.|
|21-Apr-2022|2|Updated package outline PowerFLAT 3.3 x 3.3.|



**DS9066** - **Rev 2** 

**page 8/9** 

**STPS8L30DEE** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2022 STMicroelectronics – All rights reserved 

**DS9066** - **Rev 2** 

**page 9/9** 



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