# Schottky Rectifier, 45 V, 60 A, Dual Common Cathode, TO-247, 3 Pins, 500 mV
**URL**: https://novapart.co/products/STPS60L45CW/schottky-rectifier-45-v-60-a-dual-common-cathode
**SKU**: STPS60L45CW
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €2.7000
**Stock**: 10+
## Description
Repetitive Reverse Voltage Vrrm Max:45V; Forward Current If(AV):30A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-247; No. of Pins:3Pins; Forward Voltage VF Max:500mV;
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | STPS6 |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 500mV |
| Forward Surge Current | 600A |
| Average Forward Current | 60A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 45V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1749257/)
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®
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## **STPS60L45CW**
## LOW DROP POWER SCHOTTKY RECTIFIER
|**MAJOR PRODUCTS CHARACTERISTICS**||**A1**|||||||
|---|---|---|---|---|---|---|---|---|
|**IF(AV)**
**2 x 30 A**||**A2**||||**K**|||
|**Tj (max)**
**150°C**|||||||||
|**VRRM**
**45 V**|||||||||
|**VF(max)**
**0.50 V**|||||||||
|**FEATURES AND BENEFITS**|||||||||
|I VERY SMALL CONDUCTION LOSSES|||||||**K**|**A2**|
|I NEGLIGIBLE SWITCHING LOSSES||||||**A1**|||
|I EXTREMELY FAST SWITCHING|||||||||
|I LOW FORWARD VOLTAGE DROP|||||||||
|I LOW THERMAL RESISTANCE|||**TO-247**||||||
|I AVALANCHE CAPABILITY SPECIFIED|||||||||
|**DESCRIPTION**|||||||||
## **DESCRIPTION**
Dual center tap schottky barrier rectifier suited for 5V output in off line AC/DC power supplies.
Packaged in TO-247, this device is intended for use in low voltage, high frequency converters, free wheeling and polarity protection applications.
## **ABSOLUTE RATINGS** (limiting values, per diode)
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Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 45 V
IF(RMS) RMS forward current 50 A
IF(AV) Average forward current Tc = 135°C Per diode 30 A
60
δ = 0.5 Per device
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 600 A
IRRM Repetitive peak reverse current tp = 2 µs square F=1kHz 2 A
IRSM Non repetitive peak reverse current tp = 100 µs square 4 A
PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 12300 W
Tstg Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature (*) 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
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* : dPtot < 1 thermal runaway condition for a diode on its own heatsink dTj Rth(j − a)
July 2003 - Ed: 3C
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## **STPS60L45CW**
## **THERMAL RESISTANCES**
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Symbol Parameter Value Unit
Rth (j-c) Junction to case Per diode 0.75 °C/W
0.42
Total
Rth (c) Coupling 0.1 °C/W
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When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
## **STATIC ELECTRICAL CHARACTERISTICS** (per diode)
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Symbol Parameter Tests Conditions Min. Typ. Max. Unit
IR * Reverse leakage cur- Tj = 25°C VR = 45 V 1.5 mA
rent Tj = 125°C 175 350
VF * Forward voltage drop Tj = 25°C IF = 30 A 0.55 V
Tj = 125°C IF = 30 A 0.44 0.5
Tj = 25°C IF = 60 A 0.73
Tj = 125°C IF = 60 A 0.64 0.72
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Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0073 IF[2] (RMS)
**Fig. 1:** Average forward power dissipation versus average forward current (per diode).
**Fig. 2:** Average current versus ambient temperature (δ=0.5, per diode).
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PF(av)(W)
22
20 δ = 0.1 δ = 0.2 δ = 0.5
18 δ = 0.05 δ = 1
16
14
12
10
8
T
6
4
2 IF(av) (A) δ [=tp/T] tp
0
0 5 10 15 20 25 30 35 40
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IF(av)(A)
35
Rth(j-a)=Rth(j-c)
30
25
20
15 Rth(j-a)=15°C/W
10 T
5
δ [=tp/T] tp Tamb(°C)
0
0 25 50 75 100 125 150
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**Fig. 3:** Normalized avalanche power derating versus pulse duration.
**Fig. 4:** Normalized avalanche power derating versus junction temperature.
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PARM(tp) PARM(tp)
PARM(1µs) PARM(25°C)
1 1.2
1
0.1 0.8
0.6
0.01 0.4
0.2
0.001 tp(µs) 0 T (°C)j
0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150
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**STPS60L45CW**
**Fig. 5:** Non repetitive surge peak forward current versus overload duration (maximum values, per diode).
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IM(A)
400
350
300
250
Tc=25°C
200
150
Tc=75°C
100 IM
50 t Tc=125°C
δ=0.5 t(s)
0
1E-3 1E-2 1E-1 1E+0
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**Fig. 7:** Reverse leakage current versus reverse voltage applied (typical values, per diode).
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IR(mA)
1E+3
Tj=150°C
1E+2 Tj=125°C
Tj=100°C
1E+1
1E+0
1E-1 Tj=25°C
VR(V)
1E-2
0 5 10 15 20 25 30 35 40 45
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**Fig. 6:** Relative variation of thermal transient impedance junction to case versus pulse duration.
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Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1 T
0.2
Single pulse tp(s) δ [=tp/T] tp
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
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**Fig. 8:** Junction capacitance versus reverse voltage applied (typical values, per diode).
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C(nF)
10.0
F=1MHz
Tj=25°C
1.0
VR(V)
0.1
1 2 5 10 20 50
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**Fig. 9:** Forward voltage drop versus forward current (per diode).
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IFM(A)
200
100 Typical values
Tj=150°C
Maximum values
Tj=125°C
10 Maximum values
Tj=100°C
Maximum values
Tj=25°C
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
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## **STPS60L45CW**
## **PACKAGE MECHANICAL DATA**
TO-247
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DIMENSIONS
V REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
V Dia.
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
A
H F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
L5
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
L
H 15.45 15.75 0.608 0.620
L2 L4 L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
F1 F2 L1
L2 18.50 0.728
F3 D L3 14.20 14.80 0.559 0.582
V2 L3
F4 L4 34.60 1.362
L5 5.50 0.216
F(x3)
M E M 2.00 3.00 0.078 0.118
G
= = V 5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Type Marking Package Weight Base qty Delivery mode
STPS60L45CW STPS60L45CW TO-247 4.36 g 30 Tube
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- I Cooling method : C
- I RECOMMENDED TORQUE VALUE : 0.8M.N
- I MAXIMUM TORQUE VALUE : 1.0M.N
- I EPOXY MEETS UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
- © 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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**http://www.st.com**
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stps60l45cw/diode-schottky-45v-2x30a-to-247/dp/1749257)
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