# Schottky Rectifier, 25 V, 15 A, Single, TO-220AC, 2 Pins, 350 mV

![Product image](https://novapart.co/image/farnell:9803408/)

**URL**: https://novapart.co/products/STPS15L25D/schottky-rectifier-25-v-15-a-single-to-220ac-2
**SKU**: STPS15L25D
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.4490
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:25V; Forward Current If(AV):15A; Diode Configuration:Single; Diode Case Style:TO-220AC; No. of Pins:2Pins; Forward Voltage VF Max:350mV; Forward Surge Curren

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AC |
| Diode Configuration | Single |
| Forward Voltage Max | 350mV |
| Forward Surge Current | 250A |
| Average Forward Current | 15A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9803408/)

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## **STPS15L25D/G** 

## LOW DROP POWER SCHOTTKY RECTIFIER 

## **MAIN PRODUCT CHARACTERISTICS** 

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IF(AV) 15 A<br>VRRM 25 V<br>Tj (max) 150 °C<br>V F  (max) 0.35 V<br>**----- End of picture text -----**<br>


## **FEATURES** 

- n VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK 

- n OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS 

- n AVALANCHE CAPABILITY SPECIFIED 

## **DESCRIPTION** 

Single Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters (VRMS). 

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K<br>A<br>A NC<br>K<br>TO-220AC D [2] PAK<br>STPS15L25D STPS15L25G<br>**----- End of picture text -----**<br>


Packaged in TO-220AC or D[2] PAK, this device is especially intended for use as a Rectifier at the secondary of 3.3V SMPS and DC/DC units. 

## **ABSOLUTE RATINGS** (limiting values) 

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Symbol Parameter Value Unit<br>VRRM Repetitive peak reverse voltage 25 V<br>IF(RMS) RMS forward current 30 A<br>IF(AV) Average forward current Tc = 145°C δ = 0.5 15 A<br>IFSM Surge non repetitive forward current tp = 10ms Sinusoidal 250 A<br>IRRM Repetitive peak reverse current tp = 2µs square F=1kHz 1 A<br>IRSM Non repetitive peak reverse current tp = 100µs square 4 A<br>PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 9000 W<br>Tstg Storage temperature range - 65 to + 150 °C<br>Tj Maximum operating junction temperature * 150 °C<br>dV/dt Critical rate of rise of reverse voltage 10000 V/µs<br>* : dPtot < 1 thermal runaway condition for a diode on its own heatsink<br>dTj Rth(j − a)<br>**----- End of picture text -----**<br>


1/5 

July 2003 - Ed : 5B 

**STPS15L25D/G** 

## **THERMAL RESISTANCES** 

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Symbol Parameter Value Unit<br>Rth(j-c) Junction to case 1 °C/W<br>**----- End of picture text -----**<br>


## **STATIC ELECTRICAL CHARACTERISTICS** 

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Symbol Parameters Test conditions Min. Typ. Max. Unit<br>IR * Reverse leakage current Tj = 25°C VR = 1.3 mA<br>VRRM<br>Tj = 125°C 225 450 mA<br>VF * Forward voltage drop Tj = 25°C IF = 15A 0.46 V<br>Tj = 125°C IF = 15A 0.3 0.35<br>Tj = 25°C IF = 30A 0.56<br>Tj = 125°C IF = 30A 0.41 0.46<br>**----- End of picture text -----**<br>


Pulse test : * tp = 380 µs, δ < 2% 

To evaluate the maximum conduction losses use the following equation : P = 0.24 x IF(AV) + 0.0073 IF[2] (RMS) 

**Fig. 1:** Average forward power dissipation versus average forward current. 

**Fig. 2:** Average forward current versus ambient temperature ( δ = 0.5). 

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PF(av)(W)<br>8<br>δ = 0.1 δ = 0.2<br>7 δ = 0.05 δ = 0.5<br>6<br>5<br>4 δ = 1<br>3<br>T<br>2<br>1<br>IF(av) (A) δ [=tp/T] tp<br>0<br>0 2 4 6 8 10 12 14 16<br>**----- End of picture text -----**<br>


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IF(av)(A)<br>16<br>14 Rth(j-a)=Rth(j-c)<br>12<br>10<br>8<br>Rth(j-a)=50°C/W<br>6<br>4 T<br>2<br>δ [=tp/T] tp Tamb(°C)<br>0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Fig. 3:** Normalized avalanche power derating versus pulse duration. 

**Fig. 4:** Normalized avalanche power derating versus junction temperature. 

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PARM(tp) PARM(tp)<br>PARM(1µs) PARM(25°C)<br>1 1.2<br>1<br>0.1 0.8<br>0.6<br>0.01 0.4<br>0.2<br>0.001 tp(µs) 0 T (°C)j<br>0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


2/5 

**STPS15L25D/G** 

**Fig. 5:** Non repetitive surge peak forward current versus overload duration (maximum values). 

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IM(A)<br>350<br>300<br>250<br>200 Tc=25°C<br>150 Tc=75°C<br>100<br>IM Tc=100°C<br>50 δ=0.5 t t(s)<br>0<br>1E-3 1E-2 1E-1 1E+0<br>**----- End of picture text -----**<br>


**Fig. 7:** Reverse leakage current versus reverse voltage applied (typical values). 

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IR(mA)<br>1E+3<br>Tj=150°C<br>1E+2 Tj=125°C<br>1E+1<br>1E+0<br>Tj=25°C<br>1E-1<br>VR(V)<br>1E-2<br>0 5 10 15 20 25<br>**----- End of picture text -----**<br>


**Fig. 9:** Forward voltage drop versus forward current (maximum values). 

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IFM(A)<br>200.0<br>100.0<br>Typical values<br>Tj=150°C<br>10.0<br>Tj=125°C<br>Tj=25°C<br>1.0<br>VFM(V)<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>**----- End of picture text -----**<br>


**Fig. 6:** Relative variation of thermal impedance junction to case versus pulse duration. 

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Zth(j-c)/Rth(j-c)<br>1.0<br>0.8<br>0.6 δ = 0.5<br>0.4<br>δ = 0.2<br>T<br>0.2 δ = 0.1<br>Single pulse t(s) δ [=tp/T] tp<br>0.0<br>1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0<br>**----- End of picture text -----**<br>


**Fig. 8:** Junction capacitance versus reverse voltage applied (typical values). 

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C(nF)<br>5.0<br>F=1MHz<br>Tj=25°C<br>1.0<br>VR(V)<br>0.1<br>1 2 5 10 20 30<br>**----- End of picture text -----**<br>


**Fig. 10:** Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS15L25G only) 

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Rth(j-a) (°C/W)<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10 S(Cu) (cm²)<br>0<br>0 4 8 12 16 20 24 28 32 36 40<br>**----- End of picture text -----**<br>


3/5 

**STPS15L25D/G** 

## **PACKAGE MECHANICAL DATA** 

D[2] PAK 

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DIMENSIONS<br>REF. Millimeters Inches<br>Min. Max. Min. Max.<br>A A 4.40 4.60 0.173 0.181<br>E A1 2.49 2.69 0.098 0.106<br>C 2<br>L2 A2 0.03 0.23 0.001 0.009<br>B 0.70 0.93 0.027 0.037<br>D B2 1.14 1.70 0.045 0.067<br>L C 0.45 0.60 0.017 0.024<br>L3 C2 1.23 1.36 0.048 0.054<br>A1 D 8.95 9.35 0.352 0.368<br>B2 E 10.00 10.40 0.393 0.409<br>C R<br>B G 4.88 5.28 0.192 0.208<br>G L 15.00 15.85 0.590 0.624<br>L2 1.27 1.40 0.050 0.055<br>A2<br>2.0 MIN. L3 1.40 1.75 0.055 0.069<br>FLAT ZONE<br>M 2.40 3.20 0.094 0.126<br>V2 R 0.40 typ. 0.016 typ.<br>V2 0° 8° 0° 8°<br>**----- End of picture text -----**<br>


## **FOOT PRINT DIMENSIONS** (in millimeters) 

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16.90<br>10.30 5.08<br>1.30<br>3.70<br>8.90<br>**----- End of picture text -----**<br>


- n COOLING METHOD: BY CONDUCTION (METHOD C) 

4/5 

**STPS15L25D/G** 

## **PACKAGE MECHANICAL DATA** TO-220AC 

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DIMENSIONS<br>REF. Millimeters Inches<br>Min. Max. Min. Max.<br>H2 A A 4.40 4.60 0.173 0.181<br>C C 1.23 1.32 0.048 0.051<br>D 2.40 2.72 0.094 0.107<br>L5<br>L7 E 0.49 0.70 0.019 0.027<br>Ø I<br>F 0.61 0.88 0.024 0.034<br>L6<br>F1 1.14 1.70 0.044 0.066<br>L2<br>G 4.95 5.15 0.194 0.202<br>L9 D H2 10.00 10.40 0.393 0.409<br>F1 L2 16.40 typ. 0.645 typ.<br>L4<br>L4 13.00 14.00 0.511 0.551<br>L5 2.65 2.95 0.104 0.116<br>M<br>F E L6 15.25 15.75 0.600 0.620<br>L7 6.20 6.60 0.244 0.259<br>G<br>L9 3.50 3.93 0.137 0.154<br>M 2.6 typ. 0.102 typ.<br>Diam. I 3.75 3.85 0.147 0.151<br>**----- End of picture text -----**<br>


## n COOLING METHOD : C 

- n RECOMMENDED TORQUE VALUE : 0.55 M.N 

- n MAXIMUM TORQUE VALUE : 0.70 M.N 

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Delivery<br>Ordering type Marking Package Weight Base qty<br>mode<br>STPS15L25D STPS15L25D TO-220AC 1.86g 50 Tube<br>STPS15L25G STPS15L25G D [2] PAK 1.48g 50 Tube<br>STPS15L25G-TR STPS15L25G D [2] PAK 1.48g 1000 Tape & reel<br>**----- End of picture text -----**<br>


## n EPOXY MEETS UL94,V0 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

## The ST logo is a registered trademark of STMicroelectronics 

- © 2003 STMicroelectronics - Printed in Italy - All rights reserved. 

## STMicroelectronics GROUP OF COMPANIES 

Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. 

**http://www.st.com** 

5/5 



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