# Schottky Rectifier, 40 V, 1 A, Single, SOD-123, 2 Pins, 550 mV

![Product image](https://novapart.co/image/farnell:2341586/)

**URL**: https://novapart.co/products/STPS140Z/schottky-rectifier-40-v-1-a-single-sod-123-2-pins
**SKU**: STPS140Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.0680
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:SOD-123; No. of Pins:2Pins; Forward Voltage VF Max:550mV; Forward Surg

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | STPS1 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-123 |
| Diode Configuration | Single |
| Forward Voltage Max | 550mV |
| Forward Surge Current | 5.5A |
| Average Forward Current | 1A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2341586/)

**STPS140Z** 

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POWER SCHOTTKY RECTIFIER **MAIN PRODUCT CHARACTERISTICS IF 1 A VRRM 40 V VF (max) 0.49 V Tj (max) 150** ° **C FEATURES AND BENEFITS** VERY SMALL CONDUCTION LOSSES NEGLIGIBLESWITCHING LOSSES **SOD123** EXTREMELY FAST SWITCHING **DESCRIPTION** onal Single Schottky rectifier suited for Switchmode Power Supplies and highfrequency DC to DC converters. 

Packaged in SOD123, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.Due to the small size of the packagethis device fit GSM and PCMCIA requirements. 

## **ABSOLUTE RATINGS (limiting values)** 

|**Symbol**|**Parameter**|||**Value**|**Unit**|
|---|---|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage|||40|V|
|IF|Continuousforward current|Tamb= 60°C||1|A|
|IFSM|Surge non repetitiveforward current|tp = 10 ms||5.5|A|
|||Sinusoidal||||
|IRRM|Repetitivepeak reverse current|tp = 2µs square||0.5|A|
|||F = 1kHz||||
|IRSM|Non repetitive peak reverse current|tp = 100µs|square|1|A|
|Tstg|Storage temperaturerange|||- 65 to + 150|°C|
|Tj|Maximum operating junction temperature *|||150||
|TL|Maximum temperature for solderingduring 10s|Maximum temperature for solderingduring 10s||260|°C|
|dV/dt|Critical rate of rise of reverse voltage|||10000|V/µs|



* dPtot 1 dTj[<] Rth(j−a) Thermal runaway condition for a diode on its own heatsink. 

May 1999 - Ed: 1 

1/5 

## **STPS140Z** 

## **THERMAL RESISTANCES** 

|**Symbol**||**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|Rth (j-a)|Junction to ambient*||175|°C/W|



* with 50 mm[2 ] copper area (e=35µm) 

## **STATIC ELECTRICAL CHARACTERISTICS** 

|**STATIC ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Symbol**<br>**Tests Conditions**<br>**Tests Conditions**|**Tests Conditions**|**Min.**<br>**Typ.**|**Max.**<br>**Unit**|
|IR*<br>Reverse leakage current<br>Tj = 25°C|VR= 5V||10<br>µA|
|Tj = 25°C|VR= 40V||40<br>µA|
|Tj = 100°C||1.5|5<br>mA|
|VF**<br>Forward voltage drop<br>Tj = 25°C|IF= 1 A||0.55<br>V|
|Tj = 100°C||0.45|0.51|
|Pulse test :<br>* tp = 5 ms,δ< 2 %||||
|** tp = 380µs,δ < 2%||||
|To evaluate the maximum conductionlosses use thefollowing equation :<br>P = 0.2 x IF(AV)+ 0.3 x IF2(RMS)at Tj = 150°C||||
|**Fig. 1:** Average forward power dissipation versus|**Fig. 2:** Average|forward current versus ambient||
|averageforward current.|temperature (δ=1).|||
|**PF(av)(W)**|**IF(av)(A)**|||
|0.0<br>0.1<br>0.2<br>0.3<br>0.4<br>0.5<br>0.6<br>0.7<br>0.8<br>0.9<br>1.0<br>1.1<br>0.0<br>0.1<br>0.2<br>0.3<br>0.4<br>0.5<br>0.6<br>T<br>δ=tp/T<br>tp<br>δ= 1<br>δ= 0.5<br>δ= 0.2<br>δ= 0.1<br>δ= 0.05<br>**IF(av) (A)**<br>[|{tI<br>Ph TeETA]<br>|_|<br>Ltiyw | PTtty<br>Yt<br>|<br>Yievi iy<br>| iisy lt ey<br>LTTIIAIAT YI<br>LT A<br>A lel<br>TAF YIALE<br>LTT ITVI“¢ I FI<br>| A Te<br>|_|<br>LIT IA YIY Iv Per<br>LIT VAY<br>4<br>|<br>LLIVY A Lee<br>Zag<br>> aaa|0<br>25<br>50<br>75<br>100<br>125<br>150<br>0.0<br>0.2<br>0.4<br>0.6<br>0.8<br>1.0<br>1.2<br>**Tamb(**°**C)**<br>T<br>δ=tp/T<br>tp<br>[| [| [| {|<br>[<br>[| [<br>[<br>f<br>|<br>7<br>Ty<br>a a ee<br>eee<br>;<br>|<br>**[|**<br>|<br>[| PAY tT fT **f**t **ft** ft<br>pf<br>[|<br>[<br>T<br>PAA<br>PT<br>T<br>|<br>|<br>[| {|<br>[|<br>|<br>[| TAD fT<br>yt yt<br>|<br>{|<br>f<br>|<br>[<br>[<br>|<br>fT ANA<br>TT<br>;<br>|<br>|<br>{|<br>{|<br>|<br>{|<br>|<br>|<br>NJ Tt |<br>a aee<br>ee<br>| [|<br>{|<br>[<br>|<br>|<br>IN¢ 1<br>eS<br>=<br>SEEEr|||



Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% 

To evaluate the maximum conductionlosses use thefollowing equation : P = 0.2 x IF(AV) + 0.3 x IF[2] (RMS) at Tj = 150°C 

**Fig. 1:** Average forward power dissipation versus averageforward current. 

**==> picture [221 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
PF(av)(W)<br>0.6<br>δ = 0.1 δ = 0.2 δ = 0.5<br>0.5 |_||[| {tI δ = 0.05 LtiywPh Te| PT [tty]  ETA]Yt<br>0.4 LTT IIAYievi IAT iyYI | iiLT A sy lt A eylel<br>δ = 1<br>TAF YI ALE<br>0.3 LTT IT VI“¢ I FI | A Te |_|<br>LIT IA YI Y Iv Per<br>LIT VAY 4 |<br>0.2<br>T<br>LL IVY A Lee<br>0.1<br>Zag IF(av) (A) δ [=tp/T] tp<br>0.0 > aaa<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>**----- End of picture text -----**<br>


2/5 

**STPS140Z** 

**Fig. 3:** Non repetive surge peak forward current versusoverloadduration(maximum values). 

**Fig. 4:** Relativevariationofthermalimpedancejunction to ambientversus pulse duration (epoxy printed circuit boardFR4withrecommendedpad layout). 

**==> picture [461 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
IM(A) Zth(j-a)/Rth(j-a)<br>5 1E+0<br>4 δ = 0.5<br>| TTT EEE TT pe a<br>pee ee ET ETT ee<br>3 Ta=25°C δ = 0.2<br>1E-1 δ = 0.1<br>2 CTE|| | | — Ta=60 Lom °C |A<br>T<br>1 IM 1 | ns 7ee Single pulse eee eee eee eee)<br>ARE t  a cata<br>δ=0.5 t(s) tp(s) δ [=tp/T] tp<br>0 eh. atTe orn 1E-2 AePUTT TT aa<br>1E-3 1E-2 1E-1 1E+0 1E-2 1E-1 1E+0 1E+1 5E+1<br>**----- End of picture text -----**<br>


**Fig. 5:** Reverse leakage current versus reverse voltage applied (typical value). 

**Fig. 6:** Reverse leakage current versus junction temperature (typical value). 

**==> picture [459 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
IR(mA) IR[Tj] / IR[Tj=25 ° C]<br>5E+1 5E+3<br>VR=40V<br>1E+1 ee Tj=150°C 1E+3 | | |S SS<br>eS —j |<br>1E+0 ===a5========>—== Tj=100°C ==<br>SSS __ SSeS 1E+2 a<br>1E-1 |ee Tj=70°C SSVeSSSS<br>1E+1<br>Se SS oS SS | |_| | i" |<br>1E-2 LE] |] | fd ——_—_ —_—__ _=_—_=_[_ >= = S=S=S==<br>SS —— ——————— ee —————— _——<br>1E-3 Fe Tj=25°C 1E+0 i<br>=== VR(V) a Tj( ° C)<br>1E-4 | === |__|[| [ TT | tT tT 1E-1 _—_———L [| [ J |a [————| ft [Tf]<br>0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Fig. 7:** Junction capacitance versus reverse voltage applied (typical value). 

**==> picture [220 x 133] intentionally omitted <==**

**----- Start of picture text -----**<br>
C(pF)<br>200<br>F=1MHz<br>Tj=25°C<br>100 | |e<br>———<br>a es OOOC<br>po<br>50 po eT<br>a OO<br>ei<br>20 P| [TTT] eee<br>VR(V)<br>Th<br>10<br>1 2 5 10 20 50<br>**----- End of picture text -----**<br>


3/5 

## **STPS140Z** 

**Fig. 8-1:** Forward voltage drop versus forward current(high level, maximum values). 

**Fig. 8-2:** Forward voltage drop versus forward current (low level, maximum values). 

**==> picture [459 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
IFM(A) IFM(A)<br>5E+0 aa ee ~ __sl 2.0 eeAA<br>PT} Tt ee et Tf cert TT tt tT 1.8 A<br>PTTL er LEE 1.6 ASE<br>1E+0 a===PP Tj=150 Sr °C eASS 1.41.2 eeaSeances’eeAkAEE AEE/seceeeen<br>CLLEe_Lbte) A Tj=25°C CEEeeeeeet 1.0 A Tj=25°C<br>1E-1 Li}rt || || tlLAY| Ay Tj=100°C pjPT{jj}TEEPE|  EELL|} |} 0.8 eeAee Tj=150°C Coo<br>=)aSaecoee== se ee==eee === 0.60.4 ESBEEEei PR Tj=100°C<br>ptt ryt Tg VFM(V) PP ye eee yy 0.2 es eea ee<br>1E-2 0.0 [Toren Lo VFM(V) a<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>**----- End of picture text -----**<br>


**Fig. 9:** Thermal resistance junction to ambient versus copper surface (epoxy printed circuit board FR4, copper thickness:35µm). 

**Rth(j-a) (** ° **C/W)** 

**==> picture [289 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>280260 PoCSA-++++++++++Aof ft PPAeeeGO GGG+} eee44| IF=1A —_<br>240 seeeee ee eee<br>220 sea ee ee<br>200 pfinPw eefTSOPy A O<br>180 =a A er a OO<br>160 aA A AReee<br>140 AA<br>120 aaa S(Cu) (mm ) a<br>100 aa<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


4/5 

**STPS140Z** 

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PACKAGE MECHANICAL DATA<br>SOD123 Plastic<br>DIMENSIONS<br>REF. Millimeters Inches<br>H A2<br>Min. Max. Min. Max.<br>A1<br>b<br>A 1.45 0.057<br>E A1 0 0.1 0 0.004<br>A2 0.85 1.35 0.033 0.053<br>- D . A === b 0.55 Typ. 0.022 Typ.<br>c 0.15 Typ. 0.039 Typ.<br>c D 2.55 2.85 0.1 0.112<br>E 1.4 1.7 0.055 0.067<br>G 0.25 0.01<br>G H 3.55 3.95 0.14 0.156<br>i=====<br>**----- End of picture text -----**<br>


Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

- 1999 STMicroelectronics - Printed in Italy - All rights reserved. 

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**http://www.st.com** 

5/5 



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